Pub Date : 2007-12-01DOI: 10.1109/RADECS.2007.5205514
K. Ryden, P. Morris, K. Ford, C. Dyer, A. Hands, B. Taylor, C. Underwood, D. Rodgers, G. Mandorlo, G. Gatti, H. Evans, E. Daly
The planned Galileo global navigation system will employ an array of satellites in medium Earth orbit. Internal charging is one of the primary hazards for any spacecraft in MEO and accordingly the Galileo test spacecraft, Giove-A, carries the dasiaSURFpsila detector to undertake measurements of internal charging currents deposited at three different shielding depths (0.5, 1.0 and 1.5 mm Al). Giove-A was successfully launched on 28th December 2005 into a 23,300 km circular, 56 degree inclination orbit. In this paper we provide data on the charging currents observed in 2006, with particular emphasis on two large charging events, one in April and one in December. Comparisons are made between the flight data and predictions made using ESA's internal charging tool, DICTAT, which employs the FLUMIC dasiaworst casepsila electron belt model. The DICTAT predictions of charging current are exceeded for a few days in the 1.5 mm Al shielded plate in the course of the December event.
计划中的伽利略全球导航系统将在中地球轨道上使用一系列卫星。内部充电是MEO中任何航天器的主要危害之一，因此伽利略测试航天器give - a携带了dasiaSURFpsila探测器，以测量在三种不同屏蔽深度(0.5,1.0和1.5 mm Al)沉积的内部充电电流。2005年12月28日，“give - a”成功发射，进入一个半径23300公里、倾角56度的圆形轨道。在本文中，我们提供了2006年观测到的充电电流数据，特别强调了两次大型充电事件，一次在4月，一次在12月。将飞行数据与欧空局内部充电工具dicat所做的预测进行了比较，dicat采用了fluic数据库中最糟糕的casepsila电子带模型。在12月的活动中，1.5毫米铝屏蔽板的充电电流超过了dicat预测的几天。
{"title":"Observations of internal charging and outer-belt electron enhancements from Giove-A","authors":"K. Ryden, P. Morris, K. Ford, C. Dyer, A. Hands, B. Taylor, C. Underwood, D. Rodgers, G. Mandorlo, G. Gatti, H. Evans, E. Daly","doi":"10.1109/RADECS.2007.5205514","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205514","url":null,"abstract":"The planned Galileo global navigation system will employ an array of satellites in medium Earth orbit. Internal charging is one of the primary hazards for any spacecraft in MEO and accordingly the Galileo test spacecraft, Giove-A, carries the dasiaSURFpsila detector to undertake measurements of internal charging currents deposited at three different shielding depths (0.5, 1.0 and 1.5 mm Al). Giove-A was successfully launched on 28th December 2005 into a 23,300 km circular, 56 degree inclination orbit. In this paper we provide data on the charging currents observed in 2006, with particular emphasis on two large charging events, one in April and one in December. Comparisons are made between the flight data and predictions made using ESA's internal charging tool, DICTAT, which employs the FLUMIC dasiaworst casepsila electron belt model. The DICTAT predictions of charging current are exceeded for a few days in the 1.5 mm Al shielded plate in the course of the December event.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127978341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-10DOI: 10.1109/RADECS.2007.5205500
A. Bocquillon, G. Foucard, F. Miller, N. Buard, R. Leveugle, C. Daniel, S. Rakers, T. Carrière, V. Pouget, R. Velazco
This paper presents the applications of pulsed laser experiments for testing the reliability of SRAM-based FPGAs regarding natural radiation environment. The final objective is to understand the basement of configuration memory sensitivity and to highlight the testing possibilities provided by laser fault injection in running application. Static (Virtex 2) and dynamic (Virtex 1) experiments are presented.
{"title":"Highlights of laser testing capabilities regarding the understanding of SEE in SRAM based FPGAs","authors":"A. Bocquillon, G. Foucard, F. Miller, N. Buard, R. Leveugle, C. Daniel, S. Rakers, T. Carrière, V. Pouget, R. Velazco","doi":"10.1109/RADECS.2007.5205500","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205500","url":null,"abstract":"This paper presents the applications of pulsed laser experiments for testing the reliability of SRAM-based FPGAs regarding natural radiation environment. The final objective is to understand the basement of configuration memory sensitivity and to highlight the testing possibilities provided by laser fault injection in running application. Static (Virtex 2) and dynamic (Virtex 1) experiments are presented.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126425285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205522
D. Boychenko, A. Nikiforov, P. Skorobogatov, A. Sogoyan
These Total dose effects in piezoelectric sensor PKGS-90LC-R are investigated. Experimental results comply with the supposition about accumulation of radiation-induced charge and its influence on the effective field in piezoelectric.
{"title":"Radiation effects in piezoelectric sensor","authors":"D. Boychenko, A. Nikiforov, P. Skorobogatov, A. Sogoyan","doi":"10.1109/RADECS.2007.5205522","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205522","url":null,"abstract":"These Total dose effects in piezoelectric sensor PKGS-90LC-R are investigated. Experimental results comply with the supposition about accumulation of radiation-induced charge and its influence on the effective field in piezoelectric.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125023578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205465
B. Brichard, S. van Ierschot, C. Hendrickx
We compared the efficiency of blue light photobleaching and high temperature in fibres irradiated above the MGy level. Results show that few dB can be recovered by both mechanisms. Nevertheless the optical recovery is limited due to the re-activation of defects upon subsequent irradiations.
{"title":"On the use of photobleaching and thermal annealing to recover the optical transmission in irradiated pure silica fibres","authors":"B. Brichard, S. van Ierschot, C. Hendrickx","doi":"10.1109/RADECS.2007.5205465","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205465","url":null,"abstract":"We compared the efficiency of blue light photobleaching and high temperature in fibres irradiated above the MGy level. Results show that few dB can be recovered by both mechanisms. Nevertheless the optical recovery is limited due to the re-activation of defects upon subsequent irradiations.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115042450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205526
L. Ratti, L. Gaioni, M. Manghisoni, G. Traversi, D. Pantano
The purpose of this paper is to study the mechanisms underlying performance degradation in 130 nm and 90 nm commercial CMOS technologies exposed to high doses of ionizing radiation. The investigation has been mainly focused on their noise properties in view of applications to the design of low-noise, low-power analog circuits to be operated in harsh environment. Experimental data support the hypothesis that charge trapping in shallow trench isolation (STI), besides degrading the static characteristics of interdigitated NMOS transistors, also affects their noise performances in a substantial fashion. The model discussed in this paper, presented in a previous work focused on CMOS devices irradiated with a 10 Mrad(SiO2) gamma-ray dose, has been applied here also to transistors exposed to much higher (up to 100 Mrad(SiO2)) doses of X-rays. Such a model is able to account for the extent of the observed noise degradation as a function of the device polarity, dimensions and operating point.
{"title":"Investigating degradation mechanisms in 130 nm and 90 nm commercial CMOS technologies exposed to up to 100 Mrad ionizing radiation dose","authors":"L. Ratti, L. Gaioni, M. Manghisoni, G. Traversi, D. Pantano","doi":"10.1109/RADECS.2007.5205526","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205526","url":null,"abstract":"The purpose of this paper is to study the mechanisms underlying performance degradation in 130 nm and 90 nm commercial CMOS technologies exposed to high doses of ionizing radiation. The investigation has been mainly focused on their noise properties in view of applications to the design of low-noise, low-power analog circuits to be operated in harsh environment. Experimental data support the hypothesis that charge trapping in shallow trench isolation (STI), besides degrading the static characteristics of interdigitated NMOS transistors, also affects their noise performances in a substantial fashion. The model discussed in this paper, presented in a previous work focused on CMOS devices irradiated with a 10 Mrad(SiO2) gamma-ray dose, has been applied here also to transistors exposed to much higher (up to 100 Mrad(SiO2)) doses of X-rays. Such a model is able to account for the extent of the observed noise degradation as a function of the device polarity, dimensions and operating point.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114351858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205532
S. Scheithauer, O. Krause, S. Birkmann, F. Muller, T. Junginger, W. Hajdas, G. Martinek
We report on the radiation qualification programme of position sensors for the James Webb Space Telescope. Rare earth magnets and InSb/NiSb magnetoresistors have been exposed to 50 MeV protons (total doses 42-760 krad-Si) at ambient and cryogenic conditions.
{"title":"Cryo-Irradiation tests of magneto-electrical components used for the James Webb Space Telescope","authors":"S. Scheithauer, O. Krause, S. Birkmann, F. Muller, T. Junginger, W. Hajdas, G. Martinek","doi":"10.1109/RADECS.2007.5205532","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205532","url":null,"abstract":"We report on the radiation qualification programme of position sensors for the James Webb Space Telescope. Rare earth magnets and InSb/NiSb magnetoresistors have been exposed to 50 MeV protons (total doses 42-760 krad-Si) at ambient and cryogenic conditions.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115667028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205561
C. Renaudie, M. Markgraf, O. Montenbruck, M. García
To assess the use of four types of commercial-of-the-shelf (COTS) GPS receivers under space radiation environment, Total Ionizing Dose (TID) radiation tests have been performed with a 60Co gamma-ray source.
{"title":"Radiation testing of commercial-off-the-shelf GPS technology for use on low earth orbit satellites","authors":"C. Renaudie, M. Markgraf, O. Montenbruck, M. García","doi":"10.1109/RADECS.2007.5205561","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205561","url":null,"abstract":"To assess the use of four types of commercial-of-the-shelf (COTS) GPS receivers under space radiation environment, Total Ionizing Dose (TID) radiation tests have been performed with a 60Co gamma-ray source.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116399964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205491
A. Claret, D. Boscher, O. Boulade, S. Bourdarie, P. Gallais, P. Laurent, G. Rolland
The two detectors of the ISOCAM camera on board the ISO spacecraft have performed nominally for the entire duration of the mission. Their main properties (dark current level, noise and responsivity) have been monitored on a daily basis in order to perform their trend analysis. The dark current level averaged over the whole detectors sometimes significantly increased during one or several days before going back to its nominal value. This occurred only when the spacecraft was approaching the external radiation belt and we observed that the dark current level was strongly correlated with the fluence of ambient electrons. This paper gives the interpretation of the dark current variations, which are attributed to magnetic storms.
{"title":"Impact of magnetic storms on the dark current of the space infrared camera ISO/ISOCAM","authors":"A. Claret, D. Boscher, O. Boulade, S. Bourdarie, P. Gallais, P. Laurent, G. Rolland","doi":"10.1109/RADECS.2007.5205491","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205491","url":null,"abstract":"The two detectors of the ISOCAM camera on board the ISO spacecraft have performed nominally for the entire duration of the mission. Their main properties (dark current level, noise and responsivity) have been monitored on a daily basis in order to perform their trend analysis. The dark current level averaged over the whole detectors sometimes significantly increased during one or several days before going back to its nominal value. This occurred only when the spacecraft was approaching the external radiation belt and we observed that the dark current level was strongly correlated with the fluence of ambient electrons. This paper gives the interpretation of the dark current variations, which are attributed to magnetic storms.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122039701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205572
L. Najafizadeh, A. Sutton, B. Jun, J. Cressler, T. Vo, O. Momeni, M. Mojarradi, C. Ulaganathan, S. Chen, B. Blalock, Y. Yao, X. Yu, F. Dai, P. Marshall, C. Marshall
The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic components intended for operation under extreme environments.
{"title":"Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications","authors":"L. Najafizadeh, A. Sutton, B. Jun, J. Cressler, T. Vo, O. Momeni, M. Mojarradi, C. Ulaganathan, S. Chen, B. Blalock, Y. Yao, X. Yu, F. Dai, P. Marshall, C. Marshall","doi":"10.1109/RADECS.2007.5205572","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205572","url":null,"abstract":"The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic components intended for operation under extreme environments.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133001183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-09-01DOI: 10.1109/RADECS.2007.5205496
E. Mikkola, B. Vermeire, T. Chiu, H. Barnaby, H. Parks
A novel method to evaluate total dose radiation response on large mixed signal circuits is described. The method is based on partly behavioral, partly structural simulation on the VHDL-AMS language. Results obtained with the developed simulation method are compared to total dose testing results of an embedded high-precision data acquisition system. The system was total dose tested until functional failure in a Cobalt-60 irradiation chamber. Photoemission microscopy (PEM) analysis showed severe TID induced leakage currents inside the 1.2 kbyte SRAM memory sub-system. The SRAM sub-system was TID simulated with the developed method, and the results were compared to the irradiation test results. The simulation results suggest that the drain-to-source leakage currents inside the SRAM sub-system might not be the only cause for the system failure.
{"title":"Total dose radiation effect simulations on a high-precision data acquisition system","authors":"E. Mikkola, B. Vermeire, T. Chiu, H. Barnaby, H. Parks","doi":"10.1109/RADECS.2007.5205496","DOIUrl":"https://doi.org/10.1109/RADECS.2007.5205496","url":null,"abstract":"A novel method to evaluate total dose radiation response on large mixed signal circuits is described. The method is based on partly behavioral, partly structural simulation on the VHDL-AMS language. Results obtained with the developed simulation method are compared to total dose testing results of an embedded high-precision data acquisition system. The system was total dose tested until functional failure in a Cobalt-60 irradiation chamber. Photoemission microscopy (PEM) analysis showed severe TID induced leakage currents inside the 1.2 kbyte SRAM memory sub-system. The SRAM sub-system was TID simulated with the developed method, and the results were compared to the irradiation test results. The simulation results suggest that the drain-to-source leakage currents inside the SRAM sub-system might not be the only cause for the system failure.","PeriodicalId":304903,"journal":{"name":"2007 9th European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126231542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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