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Advanced SPICE Model for GaN HEMTs (ASM-HEMT)最新文献

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Introduction to ASM-HEMT Compact Model ASM-HEMT紧凑型模型简介
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_3
S. Khandelwal
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引用次数: 0
Core Formulations in ASM-HEMT Model ASM-HEMT模型中的核心配方
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_4
S. Khandelwal
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引用次数: 0
Non-ideal Effects in Device Current and Their Modeling 器件电流中的非理想效应及其建模
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_5
S. Khandelwal
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引用次数: 0
Advance Simulations with ASM-HEMT Model ASM-HEMT模型的高级模拟
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_12
S. Khandelwal
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引用次数: 0
Effect of Ambient Temperature on GaN Device 环境温度对GaN器件的影响
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_9
S. Khandelwal
{"title":"Effect of Ambient Temperature on GaN Device","authors":"S. Khandelwal","doi":"10.1007/978-3-030-77730-2_9","DOIUrl":"https://doi.org/10.1007/978-3-030-77730-2_9","url":null,"abstract":"","PeriodicalId":325378,"journal":{"name":"Advanced SPICE Model for GaN HEMTs (ASM-HEMT)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133593553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resources for ASM-HEMT Model Users ASM-HEMT模型用户的资源
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_13
S. Khandelwal
{"title":"Resources for ASM-HEMT Model Users","authors":"S. Khandelwal","doi":"10.1007/978-3-030-77730-2_13","DOIUrl":"https://doi.org/10.1007/978-3-030-77730-2_13","url":null,"abstract":"","PeriodicalId":325378,"journal":{"name":"Advanced SPICE Model for GaN HEMTs (ASM-HEMT)","volume":"C-24 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132653962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Modeling 紧凑型建模
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_2
S. Khandelwal
{"title":"Compact Modeling","authors":"S. Khandelwal","doi":"10.1007/978-3-030-77730-2_2","DOIUrl":"https://doi.org/10.1007/978-3-030-77730-2_2","url":null,"abstract":"","PeriodicalId":325378,"journal":{"name":"Advanced SPICE Model for GaN HEMTs (ASM-HEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128201870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Non-Ideal Effects in GaN Capacitances and Their Modeling 氮化镓电容的非理想效应及其建模
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_7
S. Khandelwal
{"title":"Non-Ideal Effects in GaN Capacitances and Their Modeling","authors":"S. Khandelwal","doi":"10.1007/978-3-030-77730-2_7","DOIUrl":"https://doi.org/10.1007/978-3-030-77730-2_7","url":null,"abstract":"","PeriodicalId":325378,"journal":{"name":"Advanced SPICE Model for GaN HEMTs (ASM-HEMT)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127875170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise Models 噪声模型
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_10
S. Khandelwal
{"title":"Noise Models","authors":"S. Khandelwal","doi":"10.1007/978-3-030-77730-2_10","DOIUrl":"https://doi.org/10.1007/978-3-030-77730-2_10","url":null,"abstract":"","PeriodicalId":325378,"journal":{"name":"Advanced SPICE Model for GaN HEMTs (ASM-HEMT)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133247149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Gallium Nitride Semiconductor Devices 氮化镓半导体器件
Pub Date : 2021-06-12 DOI: 10.1007/978-3-030-77730-2_1
S. Khandelwal
{"title":"Gallium Nitride Semiconductor Devices","authors":"S. Khandelwal","doi":"10.1007/978-3-030-77730-2_1","DOIUrl":"https://doi.org/10.1007/978-3-030-77730-2_1","url":null,"abstract":"","PeriodicalId":325378,"journal":{"name":"Advanced SPICE Model for GaN HEMTs (ASM-HEMT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122022039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Advanced SPICE Model for GaN HEMTs (ASM-HEMT)
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