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Advances in Non-Volatile Memory and Storage Technology最新文献

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Index 指数
Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102584-0.09991-5
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引用次数: 0
Contributors 贡献者
Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102584-0.09990-3
Stefano Ambrogio, Y. Ando, G. Bersuker, Chong Bi, P. Blaise, B. De Salvo, J. Deuermeier, R. Dittmann, T. Endoh, S. Fukami, D. Gilmer, L. Goux, T. Hanyu, Michel Harrand, S. Hoffmann‐Eifert, Hyunsang Hwang, Cheol Seong Hwang, Daniele Ielmini, S. Ikeda, A. Kiazadeh, H. Koike, Y. Koo, Luca Larcher, Seokjae Lim, Massimo Longo, Y. Ma, Stephan Menzel, Rivu Midya, T. Mikolajick, G. Molas, C. Nail, H. Ohno, A. Padovani, Jaehyuk Park, P. Pavan, L. Perniola, F. Puglisi, Mingyi Rao, Noriyuki Sato, H. Sato, R. Shirota, Jeonghwan Song, D. Suzuki, N. Upadhyay, D. Veksler, E. Vianello, Shan-Xiang Wang, Zhongrui Wang, R. Waser, J. Yang
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引用次数: 0
3D-NAND Flash memory and technology 3D-NAND闪存和技术
Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00009-7
R. Shirota
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引用次数: 7
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 创新存储设备的高级建模和表征技术:RRAM案例
Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00004-8
F. Puglisi, A. Padovani, P. Pavan, L. Larcher
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引用次数: 3
Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems 计算系统中基于氧化物的导电桥式存储器(CBRAM)技术的进展
Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00010-3
G. Molas, M. Harrand, C. Nail, P. Blaise
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引用次数: 6
Ferroelectric memories 铁电体的记忆
Pub Date : 1900-01-01 DOI: 10.1016/b978-0-08-102584-0.00012-7
C. S. Hwang, T. Mikolajick
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引用次数: 2
Flexible and transparent ReRAM devices for system on panel (SOP) application 灵活透明的ReRAM设备,适用于系统面板(SOP)应用
Pub Date : 1900-01-01 DOI: 10.1016/B978-0-08-102584-0.00014-0
A. Kiazadeh, J. Deuermeier
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引用次数: 2
期刊
Advances in Non-Volatile Memory and Storage Technology
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