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Spintronics Handbook: Spin Transport and Magnetism, Second Edition最新文献

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Spin Filter Tunneling 自旋过滤器穿隧
Pub Date : 2011-08-25 DOI: 10.1201/B11086-17
T. Santos, J. Moodera
{"title":"Spin Filter Tunneling","authors":"T. Santos, J. Moodera","doi":"10.1201/B11086-17","DOIUrl":"https://doi.org/10.1201/B11086-17","url":null,"abstract":"","PeriodicalId":369127,"journal":{"name":"Spintronics Handbook: Spin Transport and Magnetism, Second Edition","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116186936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Magnetoresistive Random Access Memory 磁阻随机存取存储器
Pub Date : 2011-08-25 DOI: 10.1201/B11086-42
J. Åkerman
{"title":"Magnetoresistive Random Access Memory","authors":"J. Åkerman","doi":"10.1201/B11086-42","DOIUrl":"https://doi.org/10.1201/B11086-42","url":null,"abstract":"","PeriodicalId":369127,"journal":{"name":"Spintronics Handbook: Spin Transport and Magnetism, Second Edition","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130114931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spin Injection, Accumulation, and Relaxation in Metals 金属中的自旋注入、积累和弛豫
Pub Date : 2011-08-25 DOI: 10.1201/B11086-9
Mark H. Johnson
{"title":"Spin Injection, Accumulation, and Relaxation in Metals","authors":"Mark H. Johnson","doi":"10.1201/B11086-9","DOIUrl":"https://doi.org/10.1201/B11086-9","url":null,"abstract":"","PeriodicalId":369127,"journal":{"name":"Spintronics Handbook: Spin Transport and Magnetism, Second Edition","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134282416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Spin Logic Devices 自旋逻辑器件
Pub Date : 2011-08-25 DOI: 10.1201/B11086-46
H. Dery
{"title":"Spin Logic Devices","authors":"H. Dery","doi":"10.1201/B11086-46","DOIUrl":"https://doi.org/10.1201/B11086-46","url":null,"abstract":"","PeriodicalId":369127,"journal":{"name":"Spintronics Handbook: Spin Transport and Magnetism, Second Edition","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127360826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GMR Spin-Valve Biosensors GMR自旋阀生物传感器
Pub Date : 2011-08-25 DOI: 10.1201/B11086-44
D. Hall, R. Gaster, Shan X. Wang
{"title":"GMR Spin-Valve Biosensors","authors":"D. Hall, R. Gaster, Shan X. Wang","doi":"10.1201/B11086-44","DOIUrl":"https://doi.org/10.1201/B11086-44","url":null,"abstract":"","PeriodicalId":369127,"journal":{"name":"Spintronics Handbook: Spin Transport and Magnetism, Second Edition","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124469945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Point Contact Andreev Reflection Spectroscopy 点接触安德列夫反射光谱学
Pub Date : 2011-08-25 DOI: 10.1201/B11086-33
B. Nadgorny
{"title":"Point Contact Andreev Reflection Spectroscopy","authors":"B. Nadgorny","doi":"10.1201/B11086-33","DOIUrl":"https://doi.org/10.1201/B11086-33","url":null,"abstract":"","PeriodicalId":369127,"journal":{"name":"Spintronics Handbook: Spin Transport and Magnetism, Second Edition","volume":"38 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128234413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiferroic Tunnel Junctions 多铁性隧道结
Pub Date : 2006-06-16 DOI: 10.1201/B11086-19
M. Gajek, M. Bibes, S. Fusil, K. Bouzehouane, J. Fontcuberta, A. Barthélémy, A. Fert
Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different states have not been demonstrated so far. In this article, we show that this can be achieved if a multiferroic material is used as the tunnel barrier in a magnetic tunnel junction. We demonstrate that thin films of ferromagnetic-ferroelectric La0.1Bi0.9MnO3 (LBMO) retain both ferroic properties down to a thickness of only 2 nm. We have used such films as spin-filtering tunnel barriers the magnetization and electric polarization of which can be switched independently. In that case, the tunnel current across the structure is controlled by both the magnetic and ferroelectric configuration of the barrier, which gives rise to four distinct resistance states. This can be explained by the combination of spin filtering by the ferromagnetic LBMO barrier and the partial charge screening of electrical charges at the barrier/electrode interfaces due to ferroelectricity. We anticipate our results to be a starting point for more studies on the interplay between ferroelectricity and spin-dependent tunneling, and for the use of nanometric multiferroic elements in prototype devices. On a wider perspective, they may open the way towards novel reconfigurable logic spintronics architectures and to electrically controlled readout in quantum computing schemes using the spin-filter effect.
多铁质材料是一种可以同时显示电和磁顺序的单一材料。其中一些可以是铁电的和铁磁的,例如,提供了在电极化和磁化中独立编码信息的独特机会,以获得四种不同的逻辑状态。然而,到目前为止,允许这些不同状态的简单电读出的方案尚未得到证明。在本文中,我们表明,如果在磁性隧道结中使用多铁性材料作为隧道势垒,则可以实现这一目标。我们证明了铁磁-铁电La0.1Bi0.9MnO3 (LBMO)薄膜在厚度仅为2nm的情况下仍保持铁性。我们使用了自旋滤波隧道势垒等薄膜,其磁化和电极化可以独立切换。在这种情况下,穿过结构的隧道电流由势垒的磁性和铁电结构共同控制,从而产生四种不同的电阻状态。这可以解释为铁磁性LBMO势垒的自旋滤波和由于铁电性而在势垒/电极界面处对电荷进行部分电荷屏蔽的结合。我们预计我们的结果将成为铁电性和自旋相关隧道之间相互作用的更多研究的起点,以及在原型器件中使用纳米多铁性元件的起点。从更广泛的角度来看,它们可能会为新的可重构逻辑自旋电子学架构和使用自旋滤波器效应的量子计算方案中的电控读出开辟道路。
{"title":"Multiferroic Tunnel Junctions","authors":"M. Gajek, M. Bibes, S. Fusil, K. Bouzehouane, J. Fontcuberta, A. Barthélémy, A. Fert","doi":"10.1201/B11086-19","DOIUrl":"https://doi.org/10.1201/B11086-19","url":null,"abstract":"Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different states have not been demonstrated so far. In this article, we show that this can be achieved if a multiferroic material is used as the tunnel barrier in a magnetic tunnel junction. We demonstrate that thin films of ferromagnetic-ferroelectric La0.1Bi0.9MnO3 (LBMO) retain both ferroic properties down to a thickness of only 2 nm. We have used such films as spin-filtering tunnel barriers the magnetization and electric polarization of which can be switched independently. In that case, the tunnel current across the structure is controlled by both the magnetic and ferroelectric configuration of the barrier, which gives rise to four distinct resistance states. This can be explained by the combination of spin filtering by the ferromagnetic LBMO barrier and the partial charge screening of electrical charges at the barrier/electrode interfaces due to ferroelectricity. We anticipate our results to be a starting point for more studies on the interplay between ferroelectricity and spin-dependent tunneling, and for the use of nanometric multiferroic elements in prototype devices. On a wider perspective, they may open the way towards novel reconfigurable logic spintronics architectures and to electrically controlled readout in quantum computing schemes using the spin-filter effect.","PeriodicalId":369127,"journal":{"name":"Spintronics Handbook: Spin Transport and Magnetism, Second Edition","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133265961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
期刊
Spintronics Handbook: Spin Transport and Magnetism, Second Edition
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