Pub Date : 2011-05-22DOI: 10.1109/OECC.2012.6276483
H. Ambrosius, X. Leijtens, T. de Vries, J. Bolk, E. Smalbrugge, M. Smit
This paper describes a Generic InP-based Photonic Integration Technology that enables fabrication of a large variety of active- as well as passive circuits. In the COBRA clean room in Eindhoven a robust modular process flow is developed which consists of more than 10 depositions (including epitaxial growth), about 10 lithography steps (depending on the design) and more than 20 dry and wet etching steps. This process can be used to fabricate different circuits on one wafer in so-called multi-project wafer runs which allows a drastic reduction of the fabrication costs making even small- volume production economically feasible.
{"title":"A Generic InP-based Photonic Integration Technology","authors":"H. Ambrosius, X. Leijtens, T. de Vries, J. Bolk, E. Smalbrugge, M. Smit","doi":"10.1109/OECC.2012.6276483","DOIUrl":"https://doi.org/10.1109/OECC.2012.6276483","url":null,"abstract":"This paper describes a Generic InP-based Photonic Integration Technology that enables fabrication of a large variety of active- as well as passive circuits. In the COBRA clean room in Eindhoven a robust modular process flow is developed which consists of more than 10 depositions (including epitaxial growth), about 10 lithography steps (depending on the design) and more than 20 dry and wet etching steps. This process can be used to fabricate different circuits on one wafer in so-called multi-project wafer runs which allows a drastic reduction of the fabrication costs making even small- volume production economically feasible.","PeriodicalId":371480,"journal":{"name":"IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123834069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-05-22DOI: 10.1364/NFOEC.2013.JW2A.33
M. Dumitrescu, A. Laakso, J. Viheriala, M. Kamp, P. Melanen, P. Uusimaa
The epitaxial overgrowth, employed in the fabrication of conventional buried gratings, is avoided by using lateral corrugations of the ridge-waveguide as surface gratings, thus decreasing the fabrication complexity, increasing the yield and reducing the fabrication cost of distributed feedback and distributed Bragg reflector edge-emitting lasers. Single-and multiple-contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 µm are presented, including photon-photon-resonance-extended small-signal modulation bandwidth in excess of 20 GHz achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter lengths are expected to exceed 40 GHz small-signal modulation bandwidth under direct modulation.
{"title":"High-speed directly-modulated lasers with photon-photon resonance","authors":"M. Dumitrescu, A. Laakso, J. Viheriala, M. Kamp, P. Melanen, P. Uusimaa","doi":"10.1364/NFOEC.2013.JW2A.33","DOIUrl":"https://doi.org/10.1364/NFOEC.2013.JW2A.33","url":null,"abstract":"The epitaxial overgrowth, employed in the fabrication of conventional buried gratings, is avoided by using lateral corrugations of the ridge-waveguide as surface gratings, thus decreasing the fabrication complexity, increasing the yield and reducing the fabrication cost of distributed feedback and distributed Bragg reflector edge-emitting lasers. Single-and multiple-contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 µm are presented, including photon-photon-resonance-extended small-signal modulation bandwidth in excess of 20 GHz achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter lengths are expected to exceed 40 GHz small-signal modulation bandwidth under direct modulation.","PeriodicalId":371480,"journal":{"name":"IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115851516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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