Pub Date : 2004-06-03DOI: 10.1109/IVMC.2003.1222983
A. Karabutov, V. Konov, V. V. Pereverzev, I. Vlasov, E. Zavedeev, S. Pimenov, E. N. Loubnin
Nitrogen incorporation is promising for field electron emission from diamond films due to formation of electrical conductivity channels inside the films and changing electron affinity on the film surface.
{"title":"Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films","authors":"A. Karabutov, V. Konov, V. V. Pereverzev, I. Vlasov, E. Zavedeev, S. Pimenov, E. N. Loubnin","doi":"10.1109/IVMC.2003.1222983","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1222983","url":null,"abstract":"Nitrogen incorporation is promising for field electron emission from diamond films due to formation of electrical conductivity channels inside the films and changing electron affinity on the film surface.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130818650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-08-26DOI: 10.1109/IVMC.2003.1223051
Q.B. Wu, S. Ren, S. Deng, Jun Chen, N. Xu
The details are given of an experimental study of the growth process of aligned Cu/sub 2/S nanowire arrays with anodic aluminum oxide (AAO) template by a gas-solid reaction. It was found that the template played an important role in the control growth with good alignment. The nanowire arrays had similar diameter (about 100 nm) and height (about 1 /spl mu/ m). Their electron field emission property was also measured. A turn-on field of 2.2 MV/m and a threshold-field of 8 MV/m were observed, respectively.
{"title":"The growth of aligned Cu/sub 2/S nanowire arrays with AAO template by gas-solid reaction","authors":"Q.B. Wu, S. Ren, S. Deng, Jun Chen, N. Xu","doi":"10.1109/IVMC.2003.1223051","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1223051","url":null,"abstract":"The details are given of an experimental study of the growth process of aligned Cu/sub 2/S nanowire arrays with anodic aluminum oxide (AAO) template by a gas-solid reaction. It was found that the template played an important role in the control growth with good alignment. The nanowire arrays had similar diameter (about 100 nm) and height (about 1 /spl mu/ m). Their electron field emission property was also measured. A turn-on field of 2.2 MV/m and a threshold-field of 8 MV/m were observed, respectively.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123792566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-07-07DOI: 10.1109/IVMC.2003.1223006
A. Yajima, W. Kobayashi, T. Ichimura, B. Cho, C. Oshima
In this paper, multi-walled carbon nanotubes (MWCNT) can play the role of biprism interferometer in projection microscopy (PM). The biprism interference patterns are analyzed in order to obtain information on the properties of the source, such as the effective source size, the transverse coherence width.
{"title":"Finite transverse coherent length of electron source evaluated by interference fringes with a natural bi-prism","authors":"A. Yajima, W. Kobayashi, T. Ichimura, B. Cho, C. Oshima","doi":"10.1109/IVMC.2003.1223006","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1223006","url":null,"abstract":"In this paper, multi-walled carbon nanotubes (MWCNT) can play the role of biprism interferometer in projection microscopy (PM). The biprism interference patterns are analyzed in order to obtain information on the properties of the source, such as the effective source size, the transverse coherence width.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124846566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-07-07DOI: 10.1109/IVMC.2003.1222994
L. Wang, R. Stevens, S. Huq, I. Loader, B. Kent, K. Aplin, J. She
This paper focuses on the design issues and process calibrations of the fabrication of a silicon field emission device on N type 100-mm diameter silicon wafer.
本文主要研究了在直径为100mm的N型硅片上制作硅场发射器件的设计问题和工艺标定。
{"title":"Optimisation of silicon fed fabrication for space application","authors":"L. Wang, R. Stevens, S. Huq, I. Loader, B. Kent, K. Aplin, J. She","doi":"10.1109/IVMC.2003.1222994","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1222994","url":null,"abstract":"This paper focuses on the design issues and process calibrations of the fabrication of a silicon field emission device on N type 100-mm diameter silicon wafer.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125277050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have used Cu-Co alloy to generate uniform distribution of Co precipitates, and successfully grown CNTs by CVD on the Cu support.
我们利用Cu-Co合金生成均匀分布的Co沉淀，并在Cu载体上成功地通过CVD生长出CNTs。
{"title":"Carbon nanotube growth from Cu-Co alloys for field emission applications","authors":"W. Hofmeister, W. Kang, Y. Wong, J. Davidson","doi":"10.1116/1.1752900","DOIUrl":"https://doi.org/10.1116/1.1752900","url":null,"abstract":"We have used Cu-Co alloy to generate uniform distribution of Co precipitates, and successfully grown CNTs by CVD on the Cu support.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122137144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-07-07DOI: 10.1109/IVMC.2003.1222971
I. Kymissis, A. Akinwande
In this paper, it will present a strategy for reducing the cost of a field emission display. Cost reduction strategies in the past have been driven by the idea that a passive matrix display technology, no matter how complex, will be less expensive than an active matrix technology. Experience has shown that this is not the case. Active matrix liquid crystal displays dominate the flat panel display market, primarily due to their price advantage over other flat panel strategies.
{"title":"Organic TFT controlled organic field emitter","authors":"I. Kymissis, A. Akinwande","doi":"10.1109/IVMC.2003.1222971","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1222971","url":null,"abstract":"In this paper, it will present a strategy for reducing the cost of a field emission display. Cost reduction strategies in the past have been driven by the idea that a passive matrix display technology, no matter how complex, will be less expensive than an active matrix technology. Experience has shown that this is not the case. Active matrix liquid crystal displays dominate the flat panel display market, primarily due to their price advantage over other flat panel strategies.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116825593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-07-07DOI: 10.1109/IVMC.2003.1223014
Y. Suzuki, Y. Imai, H. Shimawaki, H. Mimura, K. Yokoo, T. Minami, Y. Yamane, H. Adachi
In this paper, individual emission patterns of a Si field emitter array have been studied. Energy distribution of electrons emitted from a single-tip Si field emitter have been measured using a parallel-plane electron energy analyzer.
{"title":"Individual emission images and energy distribution of an n-type Si field emitter array","authors":"Y. Suzuki, Y. Imai, H. Shimawaki, H. Mimura, K. Yokoo, T. Minami, Y. Yamane, H. Adachi","doi":"10.1109/IVMC.2003.1223014","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1223014","url":null,"abstract":"In this paper, individual emission patterns of a Si field emitter array have been studied. Energy distribution of electrons emitted from a single-tip Si field emitter have been measured using a parallel-plane electron energy analyzer.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116170417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jianjun Wang, M. Zhu, Xin Zhao, R. Outlaw, D. Manos, B. Holloway, V. Mammana
Nanometer edged carbon structures, carbon nanoflakes (CNF), have been synthesized on 50-150 nm diameter nickel arrays. Scanning electron microscopy shows CNF preferentially growing on the Ni dots with the irregular carbon flakes standing perpendicular to the substrate. Raman spectra of this structure show a typical carbon feature with D and G peaks at 1350 and 1580 cm/sup -1/, respectively. Preliminary results of field emission testing, including field emission spectroscopy, I-E curves, Fowler-Nordheim plots and stability curves, indicate that this structure could act as a conductive, robust, edge emitter.
{"title":"Synthesis and field emission testing of carbon nanoflake edge emitters","authors":"Jianjun Wang, M. Zhu, Xin Zhao, R. Outlaw, D. Manos, B. Holloway, V. Mammana","doi":"10.1116/1.1701851","DOIUrl":"https://doi.org/10.1116/1.1701851","url":null,"abstract":"Nanometer edged carbon structures, carbon nanoflakes (CNF), have been synthesized on 50-150 nm diameter nickel arrays. Scanning electron microscopy shows CNF preferentially growing on the Ni dots with the irregular carbon flakes standing perpendicular to the substrate. Raman spectra of this structure show a typical carbon feature with D and G peaks at 1350 and 1580 cm/sup -1/, respectively. Preliminary results of field emission testing, including field emission spectroscopy, I-E curves, Fowler-Nordheim plots and stability curves, indicate that this structure could act as a conductive, robust, edge emitter.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125667727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-07-07DOI: 10.1109/IVMC.2003.1223083
H. Ren, S. Deng, Jun Chen, J. She, N. Xu
In this report, we introduce an ion reactive plasma etching treatment to modify the field emission properties of screen-printed CNT thick film field emitters. The surface morphology was examined using scanning electron microscopy.
{"title":"Plasma etching treatment for improving the field emission properties of carbon nanotubes composite emitters","authors":"H. Ren, S. Deng, Jun Chen, J. She, N. Xu","doi":"10.1109/IVMC.2003.1223083","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1223083","url":null,"abstract":"In this report, we introduce an ion reactive plasma etching treatment to modify the field emission properties of screen-printed CNT thick film field emitters. The surface morphology was examined using scanning electron microscopy.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130282053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-07-07DOI: 10.1109/IVMC.2003.1223036
Sungil Bae, W. J. Seo, Seungho Choi, Soonil Lee, K. Koh
Simulation studies for the field electron emission from double-gate emitters with planar cathodes were carried out for various double gate geometries and bias configurations using the finite-element method, Fowler-Nordheim's field emission equation, and the equation of motion. Simulation results clearly demonstrated that simply grounding the second gate adjacent to the grounded cathode was sufficient for the substantial reduction of the main gate current. However, it was found that the details of the double gate geometries, such as lateral dimension of the second gate could influence the electron emission a great deal. A comparison between the experimentally measured emission characteristics and the simulation results was presented for a double gate emitter with a planar carbon-nanoparticle cathode.
{"title":"Double-gate field emitters with planar carbon-nanoparticle cathodes: simulation studies","authors":"Sungil Bae, W. J. Seo, Seungho Choi, Soonil Lee, K. Koh","doi":"10.1109/IVMC.2003.1223036","DOIUrl":"https://doi.org/10.1109/IVMC.2003.1223036","url":null,"abstract":"Simulation studies for the field electron emission from double-gate emitters with planar cathodes were carried out for various double gate geometries and bias configurations using the finite-element method, Fowler-Nordheim's field emission equation, and the equation of motion. Simulation results clearly demonstrated that simply grounding the second gate adjacent to the grounded cathode was sufficient for the substantial reduction of the main gate current. However, it was found that the details of the double gate geometries, such as lateral dimension of the second gate could influence the electron emission a great deal. A comparison between the experimentally measured emission characteristics and the simulation results was presented for a double gate emitter with a planar carbon-nanoparticle cathode.","PeriodicalId":378587,"journal":{"name":"IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127583422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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