Pub Date : 2012-10-02DOI: 10.1109/IVNC.2012.6316955
H. Shimawaki, Y. Neo, H. Mimura, F. Wakaya, M. Takai
The enhancement of electron emission by laser illumination of a metal-oxide-semiconductor (MOS) cathode based on nanocrystalline silicon was investigated. An increase of the emission current under blue laser irradiation was proportional to the incident laser power. The influence of light modulation on the emission current was also investigated. We have obtained a modulated electron beam by laser pulses.
{"title":"Photoresponse of nanocrystalline silicon based MOS cathodes","authors":"H. Shimawaki, Y. Neo, H. Mimura, F. Wakaya, M. Takai","doi":"10.1109/IVNC.2012.6316955","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316955","url":null,"abstract":"The enhancement of electron emission by laser illumination of a metal-oxide-semiconductor (MOS) cathode based on nanocrystalline silicon was investigated. An increase of the emission current under blue laser irradiation was proportional to the incident laser power. The influence of light modulation on the emission current was also investigated. We have obtained a modulated electron beam by laser pulses.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132625947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/IVNC.2012.6316904
Do-Yoon Kim, S. Park, T. Jeong, Ilhwan Kim, YongChurl Kim
Field emission properties of CNTs(carbon nanotubes) have been investigated in the various field, such as flat panel display and x-ray sources. Especially, the x-ray tube which fabricated using the CNTs can be operated with low power consumption compare with filament-based x-ray tubes. The cold cathode - CNTs- can be operated at the lower voltage and the electron which coming out from the CNTs can be controlled easilly by focus electrode. And for high emission current, the device should be stable at the high operate voltage. The gate electrode-mesh-type electrode- can be layered by using glass frit and firing process. At this point, the mesh structure can be controlled for the higher adhesion force which is for the emission stability at the high voltage. The glass frit could be act effectively between mesh electrode and insulating layer because of the designed mesh structure.
{"title":"A carbon nanotube paste with high emission currnet for the X-ray tube","authors":"Do-Yoon Kim, S. Park, T. Jeong, Ilhwan Kim, YongChurl Kim","doi":"10.1109/IVNC.2012.6316904","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316904","url":null,"abstract":"Field emission properties of CNTs(carbon nanotubes) have been investigated in the various field, such as flat panel display and x-ray sources. Especially, the x-ray tube which fabricated using the CNTs can be operated with low power consumption compare with filament-based x-ray tubes. The cold cathode - CNTs- can be operated at the lower voltage and the electron which coming out from the CNTs can be controlled easilly by focus electrode. And for high emission current, the device should be stable at the high operate voltage. The gate electrode-mesh-type electrode- can be layered by using glass frit and firing process. At this point, the mesh structure can be controlled for the higher adhesion force which is for the emission stability at the high voltage. The glass frit could be act effectively between mesh electrode and insulating layer because of the designed mesh structure.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127457465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316891
Xiuxia Zhang, Shuyi Wei, Xiaocong Yang, Lixia Zhang, Erlei Wang
In this paper, the low-cost sol-gel method was adopted to prepare transparent uniform Nano-diamond films on large areas of ITO glass. The mixture of Nano-graphite and organic vehicles doped to nano-diamond paste. After fabricating paste, the Nano-diamond was further ultrasonic dispersed. Through test a variety different content proportion of Nano-diamond paste, the best suitable paste proportion was found. Nano-diamond film was prepared by sol-gel method at 3000/min. The samples of Nano-diamond transparent film were micro-analyzed and tested the field emission characteristics.
{"title":"Luminescent of nano-diamond field emission","authors":"Xiuxia Zhang, Shuyi Wei, Xiaocong Yang, Lixia Zhang, Erlei Wang","doi":"10.1109/IVNC.2012.6316891","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316891","url":null,"abstract":"In this paper, the low-cost sol-gel method was adopted to prepare transparent uniform Nano-diamond films on large areas of ITO glass. The mixture of Nano-graphite and organic vehicles doped to nano-diamond paste. After fabricating paste, the Nano-diamond was further ultrasonic dispersed. Through test a variety different content proportion of Nano-diamond paste, the best suitable paste proportion was found. Nano-diamond film was prepared by sol-gel method at 3000/min. The samples of Nano-diamond transparent film were micro-analyzed and tested the field emission characteristics.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115658604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316981
A. Okajima, T. Matsui, K. Hata
The compact terahertz (THz) radiation source based on Smith-Purcell (SP) effect has been expected to be the next-generation table-top THz free electron laser (THz-FEL). We have performed a numerical simulation of the generation of SP radiation at THz frequency under the condition of using the electron beam (e-beam) with high repetition THz frequency by simplified particle-in-cell finite difference-time domain (PIC-FDTD) method, and clarified that frequency of SP radiation can be tuned with pre-bunch frequency of e-beam. Our results can lead to the development of more tunable table-top THz-SP-FEL.
{"title":"Simplified PIC-FDTD simulation for the development of tunable table-top Smith-Purcell terahertz free electron laser","authors":"A. Okajima, T. Matsui, K. Hata","doi":"10.1109/IVNC.2012.6316981","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316981","url":null,"abstract":"The compact terahertz (THz) radiation source based on Smith-Purcell (SP) effect has been expected to be the next-generation table-top THz free electron laser (THz-FEL). We have performed a numerical simulation of the generation of SP radiation at THz frequency under the condition of using the electron beam (e-beam) with high repetition THz frequency by simplified particle-in-cell finite difference-time domain (PIC-FDTD) method, and clarified that frequency of SP radiation can be tuned with pre-bunch frequency of e-beam. Our results can lead to the development of more tunable table-top THz-SP-FEL.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121237196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316900
A. Ciszewski, A. Trembułowicz, L. Jurczyszyn, Z. Szczudło
Hafnium or zirconium layers of thickness from a fraction of geometrical monolayer up to 2 monolayers were vapor-deposited under ultra high vacuum on the surface of the (100)-oriented W single crystal and gradually annealed at various temperatures from 300 to 2100 K. Intermixing, interdiffusion, and alloying of Hf or Zr adlayers on W(100) were observed and studied by scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Two surface alloys of different stoichometry have been identified for both Hf/W(100) and Zr/W(100) adsorption systems. Influence of oxygen adsorption on topography and morphology of Zr adlayers deposited on stepped W(100) surface was studied by STM. Formation of islands of Zr3W surface alloy surrounded by bunched steps was observed in this case.
{"title":"Intermixing and surface alloying in Hf and Zr ad-layers on W(100)","authors":"A. Ciszewski, A. Trembułowicz, L. Jurczyszyn, Z. Szczudło","doi":"10.1109/IVNC.2012.6316900","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316900","url":null,"abstract":"Hafnium or zirconium layers of thickness from a fraction of geometrical monolayer up to 2 monolayers were vapor-deposited under ultra high vacuum on the surface of the (100)-oriented W single crystal and gradually annealed at various temperatures from 300 to 2100 K. Intermixing, interdiffusion, and alloying of Hf or Zr adlayers on W(100) were observed and studied by scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Two surface alloys of different stoichometry have been identified for both Hf/W(100) and Zr/W(100) adsorption systems. Influence of oxygen adsorption on topography and morphology of Zr adlayers deposited on stepped W(100) surface was studied by STM. Formation of islands of Zr3W surface alloy surrounded by bunched steps was observed in this case.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127509735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316902
E. Shim, Sang Bum Lee, Eunji You, C. Kang, K. Lee, Y. Choi
The Ni NCs were formed on a large area of the substrate of a 4-inch wafer. The field emission measurement of the plain NCs and patterned NCs reveals that the turn-on field is for patterned NC arrays (3.23 V/μm) is lower than that for plain NCs (3.93 V/μm) while the field enhancement factor for patterned NC arrays (2963) is greater than for plain NCs (1139). Our approach to form patterned Ni NCs involves a simple, fast, cost-effective, and scalable method to fabricate effective field emitters. This approach is suitable for creating large-scale, patterned one-dimensional nanostructures for applications in flat-panel displays or electron sources.
{"title":"Rapid fabrication of wafer scale patterned nickel nanocone arrays for field emission applications","authors":"E. Shim, Sang Bum Lee, Eunji You, C. Kang, K. Lee, Y. Choi","doi":"10.1109/IVNC.2012.6316902","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316902","url":null,"abstract":"The Ni NCs were formed on a large area of the substrate of a 4-inch wafer. The field emission measurement of the plain NCs and patterned NCs reveals that the turn-on field is for patterned NC arrays (3.23 V/μm) is lower than that for plain NCs (3.93 V/μm) while the field enhancement factor for patterned NC arrays (2963) is greater than for plain NCs (1139). Our approach to form patterned Ni NCs involves a simple, fast, cost-effective, and scalable method to fabricate effective field emitters. This approach is suitable for creating large-scale, patterned one-dimensional nanostructures for applications in flat-panel displays or electron sources.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124987995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316936
R. Forbes
This conference paper reports the interim conclusions of a re-examination of the theory of the resolving power of the field electron and field ion microscopes. It argues that existing theory contains multiple errors and needs to be completely replaced. Progress made is reported. The nature of problems remaining to be solved is briefly discussed.
{"title":"Resolving power of the field electron and field ion imaging processes","authors":"R. Forbes","doi":"10.1109/IVNC.2012.6316936","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316936","url":null,"abstract":"This conference paper reports the interim conclusions of a re-examination of the theory of the resolving power of the field electron and field ion microscopes. It argues that existing theory contains multiple errors and needs to be completely replaced. Progress made is reported. The nature of problems remaining to be solved is briefly discussed.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125893751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316880
M. Yamashita, Y. Asada, T. Yamakami, R. Hayashibe, K. Kamimura
The field emission cathode was fabricated using mized compound of carbon nanotube and insulator. High field enhancement factor ß can be obtained by using distributed carbon nanotubes in the insulating mateial. The turn on field of lower than 5 V/μm was detected for the sample prepared by using sol-gel method.
{"title":"Field emission from the cold cathode using CNTs dispersed in insulating layer","authors":"M. Yamashita, Y. Asada, T. Yamakami, R. Hayashibe, K. Kamimura","doi":"10.1109/IVNC.2012.6316880","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316880","url":null,"abstract":"The field emission cathode was fabricated using mized compound of carbon nanotube and insulator. High field enhancement factor ß can be obtained by using distributed carbon nanotubes in the insulating mateial. The turn on field of lower than 5 V/μm was detected for the sample prepared by using sol-gel method.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122396292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316965
P. Serbun, A. Navitski, G. Muller, R. Schreiner, C. Prommesberger, C. Langer, F. Dams
We have fabricated a test chip with various hexagonal arrays of B-doped Si tips (height ~ 3 μm, apex radius <; 30 nm, number 1-4447, resistivity 4 Ωcm, 100 orientation) in triangular arrangement (pitch 10 μm, density 1.16×106 cm-2) in order to systematically investigate the field emission current scaling with the number N of tips. Regulated voltage scans for 1 nA revealed rather efficient emission from nearly all tips of the arrays at an average field of 15 V/μm. The expected current plateau was always obtained at fields around 20 V/μm, but its width strongly increased with N. In this carrier depletion range, the single tip provided a much higher stability (<; 5%) of the current (2-3 nA) than at lower (>; 50 %) and higher currents (>; 30%). Integral current measurements of the hexagonal arrays resulted in a statistically improved current stability (<; 1%) but only a weak increase of the total current with N0.28 yet. These results will be discussed with respect to the remaining inhomogeneity of the tips.
{"title":"Scaling of the field emission current from B-doped Si-tip arrays","authors":"P. Serbun, A. Navitski, G. Muller, R. Schreiner, C. Prommesberger, C. Langer, F. Dams","doi":"10.1109/IVNC.2012.6316965","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316965","url":null,"abstract":"We have fabricated a test chip with various hexagonal arrays of B-doped Si tips (height ~ 3 μm, apex radius <; 30 nm, number 1-4447, resistivity 4 Ωcm, 100 orientation) in triangular arrangement (pitch 10 μm, density 1.16×106 cm-2) in order to systematically investigate the field emission current scaling with the number N of tips. Regulated voltage scans for 1 nA revealed rather efficient emission from nearly all tips of the arrays at an average field of 15 V/μm. The expected current plateau was always obtained at fields around 20 V/μm, but its width strongly increased with N. In this carrier depletion range, the single tip provided a much higher stability (<; 5%) of the current (2-3 nA) than at lower (>; 50 %) and higher currents (>; 30%). Integral current measurements of the hexagonal arrays resulted in a statistically improved current stability (<; 1%) but only a weak increase of the total current with N0.28 yet. These results will be discussed with respect to the remaining inhomogeneity of the tips.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129819522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/IVNC.2012.6316886
C. Langer, C. Prommesberger, F. Dams, R. Schreiner
In order to optimize our field-emitting silicon structures, the influence of geometric parameters like aspect ratio, aperture angle and curvature on the field enhancement factor was investigated by finite element simulations. A universal geometric model consisting of a rounded triangle and elliptic curvatures was taken for modeling a variety of different silicon tip as well as ridge structures. Whereas, a high dependency of the field enhancement on the aperture angle was found, the simulations show that the elliptic curvature affects the field enhancement only marginal.
{"title":"Theoretical investigations into the field enhancement factor of silicon structures","authors":"C. Langer, C. Prommesberger, F. Dams, R. Schreiner","doi":"10.1109/IVNC.2012.6316886","DOIUrl":"https://doi.org/10.1109/IVNC.2012.6316886","url":null,"abstract":"In order to optimize our field-emitting silicon structures, the influence of geometric parameters like aspect ratio, aperture angle and curvature on the field enhancement factor was investigated by finite element simulations. A universal geometric model consisting of a rounded triangle and elliptic curvatures was taken for modeling a variety of different silicon tip as well as ridge structures. Whereas, a high dependency of the field enhancement on the aperture angle was found, the simulations show that the elliptic curvature affects the field enhancement only marginal.","PeriodicalId":396582,"journal":{"name":"25th International Vacuum Nanoelectronics Conference","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116143424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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