A. Bruma, Canhui Wang, Wei-Chang D. Yang, Dayne F. Swearer, N. Halas, Renu Sharma
{"title":"A combined experimental and theoretical approach to measure spatially resolved local surface plasmon resonances in aluminum nanocrystals (Conference Presentation)","authors":"A. Bruma, Canhui Wang, Wei-Chang D. Yang, Dayne F. Swearer, N. Halas, Renu Sharma","doi":"10.1117/12.2322948","DOIUrl":"https://doi.org/10.1117/12.2322948","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132485539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Van der Waals epitaxy of graphene and BiI3 heterostructures for dim light detection (Conference Presentation)","authors":"Po‐Han Chang, Chia‐Shuo Li, Chih‐I Wu","doi":"10.1117/12.2321279","DOIUrl":"https://doi.org/10.1117/12.2321279","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121751731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ultra-thin ZnO films were grown by atomic layer deposition (ALD) at a temperature of 60C on Si substrates and Si substrates coated with ~20nm of Al2O3 also deposited via ALD at 60C. Ellipsometry indicated ZnO films ranging in thickness from ~0.5 nm to ~7 nm. Atomic force microscopy results showed ZnO nano-islands formed prior to the completion of conformal atomic layers. AFM scans of 1um and 10um areas were employed in this study. This low dimensional ZnO islanding phenomenon was observed in both substrate types but with different incubation periods. The ZnO nano-islands on both substrates varied in diameter from ~20nm to ~100nm, island height variation ranged from ~2nm to ~9nm. ZnO nano-island formation had little to no incubation period on the Si substrates treated with ~20nm of Al2O3, and island formation was observed within 10 ZnO ALD cycles and nano-island density peaked around 20 to 30 ZnO ALD cycles. The highest rms roughness measurement obtained was of 0.7756 nm and is attributed to high nano-island density. While on bare Si the incubation period is significantly longer with nano-islands taking greater than 50 ZnO ALD cycles to form and achieving highest rms roughness of 0.25 nm around 60-70 ZnO ALD cycles. These results demonstrate non-conformal ultra-thin film growth by ALD, a deposition method expected to yield conformal thin films.
{"title":"Atomic layer deposition of non-conformal low dimensional ZnO thin films (Conference Presentation)","authors":"Brian Giraldo, N. Kobayashi, David M. Fryauf","doi":"10.1117/12.2322002","DOIUrl":"https://doi.org/10.1117/12.2322002","url":null,"abstract":"Ultra-thin ZnO films were grown by atomic layer deposition (ALD) at a temperature of 60C on Si substrates and Si substrates coated with ~20nm of Al2O3 also deposited via ALD at 60C. Ellipsometry indicated ZnO films ranging in thickness from ~0.5 nm to ~7 nm. Atomic force microscopy results showed ZnO nano-islands formed prior to the completion of conformal atomic layers. AFM scans of 1um and 10um areas were employed in this study. This low dimensional ZnO islanding phenomenon was observed in both substrate types but with different incubation periods. The ZnO nano-islands on both substrates varied in diameter from ~20nm to ~100nm, island height variation ranged from ~2nm to ~9nm. ZnO nano-island formation had little to no incubation period on the Si substrates treated with ~20nm of Al2O3, and island formation was observed within 10 ZnO ALD cycles and nano-island density peaked around 20 to 30 ZnO ALD cycles. The highest rms roughness measurement obtained was of 0.7756 nm and is attributed to high nano-island density. While on bare Si the incubation period is significantly longer with nano-islands taking greater than 50 ZnO ALD cycles to form and achieving highest rms roughness of 0.25 nm around 60-70 ZnO ALD cycles. These results demonstrate non-conformal ultra-thin film growth by ALD, a deposition method expected to yield conformal thin films.","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128064441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Cansizoglu, Yang Gao, C. Pérez, S. Ghandiparsi, K. G. Polat, H. Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, A. Elrefaie, Shih-Yuan Wang, M. Islam
{"title":"Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)","authors":"H. Cansizoglu, Yang Gao, C. Pérez, S. Ghandiparsi, K. G. Polat, H. Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, A. Elrefaie, Shih-Yuan Wang, M. Islam","doi":"10.1117/12.2323457","DOIUrl":"https://doi.org/10.1117/12.2323457","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116195413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aluminum nitride (AlN) thin films were studied to assess the dependence of their optical properties on their chemical and structural characteristics. The AlN thin films used for the study were deposited by RF magnetron sputtering with an aluminum nitride target reactively sputtered with a mixture of Ar and N2 gases.Resulting AlN thin films were further studied in the form of Distributed Bragg Reflector (DBR) that consists of stoichiometric AlN thin films (high-n layer) and an off-stoichiometric AlN thin films (low-n layer). The DBR was designed for the UV-A spectrum region exploiting negligible extinction coefficient of these AlN thin films, demonstrating the fabrication of DBR with a single sputtering target. By incrementally adding a high-n/low-n pair, the evolution of optical properties of the DBR was studied with respect to its structural transformation.
{"title":"Study of off-stoichiometric aluminum nitride thin films: a simple method of fabricating distributed Bragg reflector for ultraviolet A by RF magnetron sputtering (Conference Presentation)","authors":"Faiza Anjum, David M. Fryauf, N. Kobayashi","doi":"10.1117/12.2322407","DOIUrl":"https://doi.org/10.1117/12.2322407","url":null,"abstract":"Aluminum nitride (AlN) thin films were studied to assess the dependence of their optical properties on their chemical and structural characteristics. The AlN thin films used for the study were deposited by RF magnetron sputtering with an aluminum nitride target reactively sputtered with a mixture of Ar and N2 gases.Resulting AlN thin films were further studied in the form of Distributed Bragg Reflector (DBR) that consists of stoichiometric AlN thin films (high-n layer) and an off-stoichiometric AlN thin films (low-n layer). The DBR was designed for the UV-A spectrum region exploiting negligible extinction coefficient of these AlN thin films, demonstrating the fabrication of DBR with a single sputtering target. By incrementally adding a high-n/low-n pair, the evolution of optical properties of the DBR was studied with respect to its structural transformation.","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133264724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shrawan Roy, Wooseon Choi, Sera Jeon, Do-Hwan Kim, H. Kim, S. Yun, Yongjun Lee, Jaekwang Lee, Young. M. Kim, Jeongyong Kim
{"title":"Effect of chemical treatment on structural defects and optical properties of two-dimensional semiconductors (Conference Presentation)","authors":"Shrawan Roy, Wooseon Choi, Sera Jeon, Do-Hwan Kim, H. Kim, S. Yun, Yongjun Lee, Jaekwang Lee, Young. M. Kim, Jeongyong Kim","doi":"10.1117/12.2320484","DOIUrl":"https://doi.org/10.1117/12.2320484","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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