Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943468
Moataz Eissa, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama
Low-thermal-resistance hybrid GaInAsP/SOI ridge-waveguide Fabry-Perot lasers were demonstrated. Novel ridge-insulation structure was introduced to enhance heat dissipation. Record low thermal resistance of 14.3 K/W were demonstrated at 2-mm-cavity length even on SOI with $3.0-mu mathrm{m}$-thick oxide layer.
{"title":"Low-thermal-resistance by Decoupled Ridge Insulation Structure for hybrid GaInAsP/SOI ridge-waveguide lasers","authors":"Moataz Eissa, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama","doi":"10.23919/ISLC52947.2022.9943468","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943468","url":null,"abstract":"Low-thermal-resistance hybrid GaInAsP/SOI ridge-waveguide Fabry-Perot lasers were demonstrated. Novel ridge-insulation structure was introduced to enhance heat dissipation. Record low thermal resistance of 14.3 K/W were demonstrated at 2-mm-cavity length even on SOI with $3.0-mu mathrm{m}$-thick oxide layer.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115130847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943363
J. Massengale, Yixuan Shen, R. Yang, S. Hawkins, J. Klem
We demonstrate significantly improved performance of InAs-based interband cascade lasers (ICLs) operating in extended wavelength regions covering $10-13 mu mathrm{m}$ with threshold current densities (Jth) as low as 12 A/cm2 and continuous-wave (cw) output powers greater than 40 mW/facet.
我们展示了基于inas的带间级联激光器(ICLs)的性能显著提高，工作在覆盖$10-13 mu mathrm{m}$的扩展波长区域，阈值电流密度(Jth)低至12 A/cm2，连续波(cw)输出功率大于40 mW/facet。
{"title":"Advances in Long Wavelength Interband Cascade Lasers","authors":"J. Massengale, Yixuan Shen, R. Yang, S. Hawkins, J. Klem","doi":"10.23919/ISLC52947.2022.9943363","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943363","url":null,"abstract":"We demonstrate significantly improved performance of InAs-based interband cascade lasers (ICLs) operating in extended wavelength regions covering <tex>$10-13 mu mathrm{m}$</tex> with threshold current densities (J<inf>th</inf>) as low as 12 A/cm<sup>2</sup> and continuous-wave (cw) output powers greater than 40 mW/facet.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128242918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943339
A. Matsumoto, K. Akahane, T. Umezawa, S. Nakajima, N. Yamamoto, A. Kanno
We successfully improved characteristics of ridge structured QD-LD and demonstrated threshold current of 9.5 mA and corresponding threshold current density of 0.34 kA/cm2, whose value was the lowest class previously reported as $1.55 mumathrm{m}$-band edge emitted type QD-LDs to the best of our knowledge.
{"title":"Low Threshold $1.55 mumathrm{m}$-Band Quantum Dot Laser Diode with InP(311)B Substrate","authors":"A. Matsumoto, K. Akahane, T. Umezawa, S. Nakajima, N. Yamamoto, A. Kanno","doi":"10.23919/ISLC52947.2022.9943339","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943339","url":null,"abstract":"We successfully improved characteristics of ridge structured QD-LD and demonstrated threshold current of 9.5 mA and corresponding threshold current density of 0.34 kA/cm2, whose value was the lowest class previously reported as $1.55 mumathrm{m}$-band edge emitted type QD-LDs to the best of our knowledge.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130613179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943499
Ying Xue, Jie Li, Liying Lin, Zengshan Xing, K. Wong, K. Lau
We report telecom micro-ring lasers selectively grown on industry-standard (001)-oriented silicon-on-insulator wafers using lateral aspect ratio trapping. Laser structures with InP claddings and lateral QW active region were grown. Micro-ring lasers with various dimensions feature a co-planar configuration with the Si device layer. Room temperature pulsed lasing with a low threshold of 20 $mu mathrm{J}/text{cm}^{2}$ was obtained.
{"title":"Telecom micro-lasers grown on SOI by lateral epitaxy","authors":"Ying Xue, Jie Li, Liying Lin, Zengshan Xing, K. Wong, K. Lau","doi":"10.23919/ISLC52947.2022.9943499","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943499","url":null,"abstract":"We report telecom micro-ring lasers selectively grown on industry-standard (001)-oriented silicon-on-insulator wafers using lateral aspect ratio trapping. Laser structures with InP claddings and lateral QW active region were grown. Micro-ring lasers with various dimensions feature a co-planar configuration with the Si device layer. Room temperature pulsed lasing with a low threshold of 20 $mu mathrm{J}/text{cm}^{2}$ was obtained.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"11 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121001142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we develop and present a 1.55 $mu mathrm{m}$ DFB laser that demonstrates ultra-high optical power, excellent wavelength stability, high SMSR, narrow linewidth, and high-speed modulation capabilities. These features make it suitable for coherent light sources used in low-orbit satellite optical communications.
{"title":"High power 1.55 $boldsymbol{mumathrm{m}}$ DFB laser with GHz modulation capability for low-orbit optical communication system","authors":"Te-Hua Liu, Hao-Tien Cheng, Hsiang-Chun Yen, Chee-Keong Yee, Yun-Cheng Yang, Guei-Ting Hsu, Chaoying Wu","doi":"10.23919/ISLC52947.2022.9943444","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943444","url":null,"abstract":"In this work, we develop and present a 1.55 $mu mathrm{m}$ DFB laser that demonstrates ultra-high optical power, excellent wavelength stability, high SMSR, narrow linewidth, and high-speed modulation capabilities. These features make it suitable for coherent light sources used in low-orbit satellite optical communications.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116161418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943386
C. Zah
We review 1.3 $mu mathrm{m}$ AlGaInAs/InP laser development in the early 1990s for uncooled subscriber loop operations. A similar active design has been used to make 1.3- and $1.55-mu mathrm{m}$ VCSELs and $1.3-mu mathrm{m}$ directly modulated MQW DFB lasers for 100G Ethernet application in 2000s.
{"title":"A recap of high performance AlGaInAs/InP laser development history","authors":"C. Zah","doi":"10.23919/ISLC52947.2022.9943386","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943386","url":null,"abstract":"We review 1.3 $mu mathrm{m}$ AlGaInAs/InP laser development in the early 1990s for uncooled subscriber loop operations. A similar active design has been used to make 1.3- and $1.55-mu mathrm{m}$ VCSELs and $1.3-mu mathrm{m}$ directly modulated MQW DFB lasers for 100G Ethernet application in 2000s.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124317908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943455
Z. Bian, Xingyu Zhao, K. Rae, A. M. Kyaw, Daehyun Kim, A. McKenzie, B. King, J. Liu, S. Thoms, Paul Reynolds, N. Gerrard, J. Grant, J. Orchard, Calum H. Hill, Connor W. Munro, P. Ivanov, D. Childs, R. J. Taylor, R. Hogg
Resonator embedded photonic crystal surface emitting lasers are reported. Reduced threshold current and enhanced slope efficiencies are demonstrated in InP-based 1310nm PCSELs. Band-structure analysis of 1550nm devices demonstrates that frequency selective cavity enhancement of band-edges (and hence lasing mode selection) may be obtained.
{"title":"Resonator Embedded Photonic Crystal Surface Emitting Lasers","authors":"Z. Bian, Xingyu Zhao, K. Rae, A. M. Kyaw, Daehyun Kim, A. McKenzie, B. King, J. Liu, S. Thoms, Paul Reynolds, N. Gerrard, J. Grant, J. Orchard, Calum H. Hill, Connor W. Munro, P. Ivanov, D. Childs, R. J. Taylor, R. Hogg","doi":"10.23919/ISLC52947.2022.9943455","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943455","url":null,"abstract":"Resonator embedded photonic crystal surface emitting lasers are reported. Reduced threshold current and enhanced slope efficiencies are demonstrated in InP-based 1310nm PCSELs. Band-structure analysis of 1550nm devices demonstrates that frequency selective cavity enhancement of band-edges (and hence lasing mode selection) may be obtained.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124077320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943299
Y. Maeda, T. Aihara, T. Fujii, T. Hiraki, K. Takeda, T. Tsuchizawa, H. Sugiyama, Tomonari Sato, T. Segawa, Y. Ota, S. Iwamoto, Y. Arakawa, S. Matsuo
We fabricate a membrane distributed-reflector lasers with a Si waveguide by using micro-transfer printing, achieving a low threshold current of 1.1-3.7 mA in a temperature range of $25-80^{circ}mathrm{C}$ and good optical coupling between the laser output and 220-nm-thick Si waveguides.
{"title":"High-temperature Operation of Membrane DR Lasers Integrated with Si Waveguide by Micro-transfer Printing Method","authors":"Y. Maeda, T. Aihara, T. Fujii, T. Hiraki, K. Takeda, T. Tsuchizawa, H. Sugiyama, Tomonari Sato, T. Segawa, Y. Ota, S. Iwamoto, Y. Arakawa, S. Matsuo","doi":"10.23919/ISLC52947.2022.9943299","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943299","url":null,"abstract":"We fabricate a membrane distributed-reflector lasers with a Si waveguide by using micro-transfer printing, achieving a low threshold current of 1.1-3.7 mA in a temperature range of $25-80^{circ}mathrm{C}$ and good optical coupling between the laser output and 220-nm-thick Si waveguides.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126539343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943359
Takuya Inoue, Ryohei Morita, Kazuki Nigo, M. Yoshida, K. Ishizaki, M. de Zoysa, S. Noda
We propose a photonic-crystal surface-emitting laser with band-edge frequency gradation, which induces self-$Q$-switching operation without saturable absorbers. We experimentally demonstrate self-pulsation with a record-high peak power of > 80 W and a short pulse width of <30 ps in a 1-mm-diameter device.
{"title":"Self-$Q$-switched photonic-crystal lasers with band-edge frequency gradation","authors":"Takuya Inoue, Ryohei Morita, Kazuki Nigo, M. Yoshida, K. Ishizaki, M. de Zoysa, S. Noda","doi":"10.23919/ISLC52947.2022.9943359","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943359","url":null,"abstract":"We propose a photonic-crystal surface-emitting laser with band-edge frequency gradation, which induces self-$Q$-switching operation without saturable absorbers. We experimentally demonstrate self-pulsation with a record-high peak power of > 80 W and a short pulse width of <30 ps in a 1-mm-diameter device.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130013133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-16DOI: 10.23919/ISLC52947.2022.9943434
Reona Oshikiri, Yuka Kobayashi, H. Shimizu
We report magnetically switchable operation of a semiconductor microring laser (radius of 30 $mu mathrm{m}$) integrated with TE mode waveguide optical isolator. This result opens a way to the optical memory applications by using nonvolatile property of the ferromagnetic metal, and on-chip light assisted magnetic recording.
{"title":"Magnetically switchable semiconductor microring laser with TE mode waveguide optical isolator","authors":"Reona Oshikiri, Yuka Kobayashi, H. Shimizu","doi":"10.23919/ISLC52947.2022.9943434","DOIUrl":"https://doi.org/10.23919/ISLC52947.2022.9943434","url":null,"abstract":"We report magnetically switchable operation of a semiconductor microring laser (radius of 30 $mu mathrm{m}$) integrated with TE mode waveguide optical isolator. This result opens a way to the optical memory applications by using nonvolatile property of the ferromagnetic metal, and on-chip light assisted magnetic recording.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134235620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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