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Phase transition and polar cluster behavior above Curie temperature in ferroelectric BaTi$_{0.8}$Zr$_{0.2}$O$_3$ 铁电体 BaTi$_{0.8}$Zr$_{0.2}$O$_3$ 中居里温度以上的相变和极簇行为
Pub Date : 2024-04-30 DOI: arxiv-2404.19558
Oktay Aktas, Francisco Javier Romero, Zhengwang He, Gan Linyu, Xiangdong Ding, José-María Martín-Olalla, Maria-Carmen Gallardo, Turab Lookman
We study the phase transition behavior of the ferroelectricBaTi$_{0.8}$Zr$_{0.2}$O$_3$ in the paraelectric region. The temperaturedependencies of thermal, polar, elastic and dielectric properties indicate thepresence of local structures above the paraelectric-ferroelectric transitiontemperature Tc = 292 K. The non-zero remnant polarization is measured up to acharacteristic temperature T* ~350 K, which coincides with the temperaturewhere the dielectric constant deviates from Curie-Weiss law. ResonantPiezoelectric Spectroscopy shows that DC field-cooling above Tc using fieldssmaller than the coercive field leads to an elastic response and remnantpiezoelectricity below T*, which likely corresponds to the coherencetemperature associated with polar nanostructures in ferroelectrics. Theobserved remnant effect is attributed to the reorientation of polarnanostructures above Tc.
我们研究了铁电体 BaTi$_{0.8}$Zr$_{0.2}$O$_3$ 在副电区的相变行为。热、极性、弹性和介电性质的温度依赖性表明,在副介电-铁电转变温度 Tc = 292 K 以上存在局部结构。在特征温度 T* ~350 K 以下测量到了非零残余极化,这与介电常数偏离居里-韦斯定律的温度相吻合。共振压电光谱显示,使用小于矫顽力场的场在 Tc 以上进行直流场冷却会导致弹性响应和低于 T* 的残余压电,这可能与铁电中极性纳米结构相关的相干温度一致。所观察到的残余效应归因于极性纳米结构在 Tc 以上的重新定向。
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引用次数: 0
Anomalous Spin and Orbital Hall Phenomena in Antiferromagnetic Systems 反铁磁系统中的反常自旋和轨道霍尔现象
Pub Date : 2024-04-29 DOI: arxiv-2404.18712
J. E. Abrão, E. Santos, J. L. Costa, J. G. S. Santos, J. B. S. Mendes, A. Azevedo
We investigate anomalous spin and orbital Hall phenomena in antiferromagnetic(AF) materials via orbital pumping experiments. Conducting spin and orbitalpumping experiments on YIG/Pt/Ir20Mn80 heterostructures, we unexpectedlyobserve strong spin and orbital anomalous signals in an out-of-planeconfiguration. We report a sevenfold increase in the signal of the anomalousinverse orbital Hall effect (AIOHE) compared to conventional effects. Our studysuggests expanding the Orbital Hall angle ({theta}_OH) to a rank 3 tensor,akin to the Spin Hall angle ({theta}_SH), to explain AIOHE. This work pioneersconverting spin-orbital currents into charge current, advancing thespin-orbitronics domain in AF materials.
我们通过轨道泵浦实验研究了反铁磁(AF)材料中的反常自旋和轨道霍尔现象。在对 YIG/Pt/Ir20Mn80 异质结构进行自旋和轨道泵浦实验时,我们意外地在平面外配置中观测到了强烈的自旋和轨道反常信号。与传统效应相比,我们报告的反常反轨道霍尔效应(AIOHE)信号增加了七倍。我们的研究建议将轨道霍尔角({theta}_OH)扩展为秩 3 张量,类似于自旋霍尔角({theta}_SH),以解释 AIOHE。这项工作开创了将自旋轨道电流转换为电荷电流的先河,推动了原子力材料中自旋轨道电子学领域的发展。
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引用次数: 0
Spin-dependent $π$$π^{ast}$ gap in graphene on a magnetic substrate 磁性衬底上石墨烯中的自旋依赖性 $π$$π^{ast}$ 间隙
Pub Date : 2024-04-27 DOI: arxiv-2404.17887
P. M. Sheverdyaeva, G. Bihlmayer, E. Cappelluti, D. Pacilé, F. Mazzola, N. Atodiresei, M. Jugovac, I. Grimaldi, G. Contini, A. K. Kundu, I. Vobornik, J. Fujii, P. Moras, C. Carbone, L. Ferrari
We present a detailed analysis of the electronic properties ofgraphene/Eu/Ni(111). By using angle and spin-resolved photoemissionspectroscopy and ab initio calculations, we show that the Eu-intercalation ofgraphene/Ni(111) restores the nearly freestanding dispersion of the$pipi^ast$ Dirac cones at the K point with an additional lifting of the spindegeneracy due to the mixing of graphene and Eu states. The interaction withthe magnetic substrate results in a large spin-dependent gap in the Dirac coneswith a topological nature characterized by a large Berry curvature, and aspin-polarized van Hove singularity, whose closeness to the Fermi level givesrise to a polaronic band.
我们详细分析了石墨烯/Eu/Ni(111)的电子特性。通过使用角度和自旋分辨光发射光谱以及 ab initio 计算,我们发现石墨烯/Eu/Ni(111)的 Eu 互掺恢复了 K 点的($/pi/pi^ast/$)狄拉克锥的近乎独立的分散性,同时由于石墨烯和 Eu 态的混合,额外地解除了自旋不均匀性。与磁性基底的相互作用导致了具有拓扑性质的狄拉克锥中的大自旋间隙,其特征是大贝里曲率和spin-polarized van Hove奇异性,其与费米级的接近性产生了极子带。
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引用次数: 0
Neural network-based recognition of multiple nanobubbles in graphene 基于神经网络识别石墨烯中的多个纳米气泡
Pub Date : 2024-04-24 DOI: arxiv-2404.15658
Subin Kim, Nojoon Myoung, Seunghyun Jun, Ara Go
We present a machine learning method for swiftly identifying nanobubbles ingraphene, crucial for understanding electronic transport in graphene-baseddevices. Nanobubbles cause local strain, impacting graphene's transportproperties. Traditional techniques like optical imaging are slow and limitedfor characterizing multiple nanobubbles. Our approach uses neural networks toanalyze graphene's density of states, enabling rapid detection andcharacterization of nanobubbles from electronic transport data. This methodswiftly enumerates nanobubbles and surpasses conventional imaging methods inefficiency and speed. It enhances quality assessment and optimization ofgraphene nanodevices, marking a significant advance in condensed matter physicsand materials science. Our technique offers an efficient solution for probingthe interplay between nanoscale features and electronic properties intwo-dimensional materials.
我们介绍了一种快速识别石墨烯中纳米气泡的机器学习方法,这种方法对于了解石墨烯基器件中的电子传输至关重要。纳米气泡会造成局部应变,影响石墨烯的传输特性。传统技术(如光学成像)在表征多个纳米气泡时既缓慢又有限。我们的方法利用神经网络来分析石墨烯的态密度,从而能够从电子传输数据中快速检测和表征纳米气泡。这种方法能迅速枚举纳米气泡,在效率和速度上都超过了传统的成像方法。它增强了石墨烯纳米器件的质量评估和优化,标志着凝聚态物理学和材料科学的重大进步。我们的技术为探测二维材料的纳米级特征与电子特性之间的相互作用提供了有效的解决方案。
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引用次数: 0
Structural investigation of the quasi-one-dimensional topological insulator Bi$_4$I$_4$ 准一维拓扑绝缘体 Bi$_4$I$_4$ 的结构研究
Pub Date : 2024-04-24 DOI: arxiv-2404.16194
C. David Hinostroza, Leandro Rodrigues de Faria, Gustavo H. Cassemiro, J. Larrea Jiménez, Antonio Jefferson da Silva Machado, Walber H. Brito, Valentina Martelli
The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around$T_Psim 300$K, which separates a high-temperature $beta$ phase ($T>T_P$) froma low-temperature $alpha$ phase ($T
卤化铋Bi$_4$I$_4$在$T_Psim 300$K左右发生结构转变,将高温$beta$相($T>T_P$)与低温$alpha$相($T
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引用次数: 0
Direct observation of Floquet-Bloch states in monolayer graphene 直接观测单层石墨烯中的 Floquet-Bloch 态
Pub Date : 2024-04-22 DOI: arxiv-2404.14392
Dongsung Choi, Masataka Mogi, Umberto De Giovannini, Doron Azoury, Baiqing Lv, Yifan Su, Hannes Hübener, Angel Rubio, Nuh Gedik
Floquet engineering is a novel method of manipulating quantum phases ofmatter via periodic driving [1, 2]. It has successfully been utilized indifferent platforms ranging from photonic systems [3] to optical lattice ofultracold atoms [4, 5]. In solids, light can be used as the periodic drive viacoherent light-matter interaction. This leads to hybridization of Blochelectrons with photons resulting in replica bands known as Floquet-Blochstates. After the direct observation of Floquet-Bloch states in a topologicalinsulator [6], their manifestations have been seen in a number of otherexperiments [7-14]. By engineering the electronic band structure usingFloquet-Bloch states, various exotic phase transitions have been predicted[15-22] to occur. To realize these phases, it is necessary to better understandthe nature of Floquet-Bloch states in different materials. However, directenergy and momentum resolved observation of these states is still limited toonly few material systems [6, 10, 14, 23, 24]. Here, we report directobservation of Floquet-Bloch states in monolayer epitaxial graphene which wasthe first proposed material platform [15] for Floquet engineering. By usingtime- and angle-resolved photoemission spectroscopy (trARPES) with mid-infrared(mid-IR) pump excitation, we detected replicas of the Dirac cone. Pumppolarization dependence of these replica bands unequivocally shows that theyoriginate from the scattering between Floquet-Bloch states and photon-dressedfree-electron-like photoemission final states, called Volkov states. Beyondgraphene, our method can potentially be used to directly observe Floquet-Blochstates in other systems paving the way for Floquet engineering in a wide rangeof quantum materials.
Floquet 工程是一种通过周期性驱动来操纵物质量子相的新方法[1, 2]。从光子系统[3] 到超冷原子的光学晶格[4, 5],它已在各种平台上得到成功应用。在固体中,光可以作为周期性驱动力来实现相干光-物质相互作用。这导致了布洛奇电子与光子的杂化,产生了被称为 Floquet-Blochstates 的复制带。在拓扑绝缘体中直接观测到弗洛克-布洛赫态之后 [6],人们又在其他一些实验中看到了它们的表现形式 [7-14]。通过利用弗洛克-布洛赫态来设计电子能带结构,人们预测会发生各种奇异的相变[15-22]。要实现这些相变,就必须更好地理解不同材料中 Floquet-Bloch 态的性质。然而,对这些态的直接能量和动量分辨观测仍然仅限于少数几个材料系统 [6,10,14,23,24]。在这里,我们报告了在单层外延石墨烯中对 Floquet-Bloch 状态的直接观测,石墨烯是第一个被提议用于 Floquet 工程的材料平台 [15]。通过使用中红外(mid-IR)泵激发的时间和角度分辨光发射光谱(trARPES),我们探测到了狄拉克锥的复制品。这些复制带的泵浦极化依赖性明确显示,它们源于弗洛克-布洛赫态与光子压制的无自由电子类光辐射最终态(称为沃尔科夫态)之间的散射。除了石墨烯之外,我们的方法还有可能用于直接观察其他体系中的弗洛克-布洛赫态,为在各种量子材料中开展弗洛克工程铺平道路。
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引用次数: 0
Fully Tunable Fano Resonances in Chiral Electronic Transport 手性电子传输中的全调谐法诺共振
Pub Date : 2024-04-21 DOI: arxiv-2404.13597
Ai-Ying Ye, Zhao Yang Zeng
Fano resonance arises from interference between a direct path and a resonantpath. Predictions and observations of Fano profiles of conductance have beenreported yet only in nonchiral electron transport. We propose an electronicMach-Zehnder-Fano interferometer(textcolor{blue}{MZFI}) that integrates aquantum dot to an electronic Mach-Zehnder interferometer and investigatevarious transport spectra of this type of device. Electron motion in the deviceis chiral and backscattering is absent, enabling the transmission, linearconductance and differential spectra such as differential conductance,differential shot noise and differential Fano factor to possess perfect Fanoprofiles that can be fully tuned by an external magnetic flux. For a symmetricinterferometer of(two arms with the same length, even the current and shotnoise demonstrate fully tunable resonances and are bestowed different hallmarksunique to Fano resonances. All the transport spectra display the same evolutionpattern in an evolution cycle, which along with the profiles are robust againstvariation of the parameters defining the device.
法诺共振产生于直接路径和共振路径之间的干扰。关于法诺电导曲线的预测和观测,目前仅在非手性电子传输中有所报道。我们提出了一种电子马赫-泽恩德-法诺干涉仪(textcolor{blue}{MZFI}),它将量子点集成到电子马赫-泽恩德干涉仪中,并研究了这种器件的各种输运谱。该器件中的电子运动是手性的,不存在反向散射,从而使传输、线性电导和差分光谱(如差分电导、差分射电噪声和差分法诺因子)具有完美的范谱,可以通过外部磁通进行完全调谐。对于两臂长度相同的对称干涉仪,即使电流和射噪声也表现出完全可调的共振,并具有法诺共振独有的不同特征。所有传输光谱在一个演化周期中都显示出相同的演化模式,这些模式和轮廓对定义器件的参数变化具有稳健性。
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引用次数: 0
Adiabatic Approximation and Aharonov-Casher Bands in Twisted Homobilayer TMDs 扭曲同层 TMD 中的绝热近似和阿哈诺夫-卡舍尔带
Pub Date : 2024-04-20 DOI: arxiv-2404.13455
Jingtian Shi, Nicolás Morales-Durán, Eslam Khalaf, Allan H. MacDonald
Topological flat moir'e bands with nearly ideal quantum geometry have beenidentified in AA homobilayer transition metal dichalcogenide moir'esuperlattices, and are thought to be crucial for understanding the fractionalChern insulating states recently observed therein. Previous work proposedviewing the system using an adiabatic approximation that replaces theposition-dependence of the layer spinor by a nonuniform periodic effectivemagnetic field. When the local zero-point kinetic energy of this magnetic fieldcancels identically against that of an effective Zeeman energy, a Bloch-bandversion of Aharonov-Casher zero-energy modes, which we refer to asAharonov-Casher band, emerges leading to ideal quantum geometry. Here, wecritically examine the validity of the adiabatic approximation and identify theparameter regimes under which Aharonov-Casher bands emerge. We show that theadiabatic approximation is accurate for a wide range of parameters includingthose realized in experiments. Furthermore, we show that while the cancellationleading to the emergence of Aharonov-Casher bands is generally not possiblebeyond the leading Fourier harmonic, the leading harmonic is the dominant termin the Fourier expansions of the zero-point kinetic energy and Zeeman energy.As a result, the leading harmonic expansion accurately captures the trend ofthe bandwidth and quantum geometry, though it may fail to quantitativelyreproduce more detailed information about the bands such as the Berry curvaturedistribution.
在AA同双层过渡金属二掺杂化合物超晶格中发现了具有近乎理想量子几何形状的拓扑平坦莫尔(e)带,这被认为是理解最近在其中观察到的分数切尔诺绝缘态的关键。之前的研究提出使用绝热近似来观察该系统,即用非均匀周期性有效磁场来取代层旋子的位置依赖性。当该磁场的局部零点动能与有效泽曼能完全相消时,阿哈诺夫-卡舍尔零能模式的布洛赫带(我们称之为阿哈诺夫-卡舍尔带)就会出现,从而导致理想的量子几何。在这里,我们严格检验了绝热近似的有效性,并确定了阿哈诺夫-卡舍带出现的参数区间。我们证明,绝热近似对于广泛的参数(包括实验中实现的参数)都是准确的。此外,我们还表明,虽然导致阿哈诺夫-卡舍带出现的取消一般不可能超出前导傅里叶谐波,但前导谐波在零点动能和泽曼能的傅里叶展开中是主要的。
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引用次数: 0
A Griffith description of fracture for non-monotonic loading with application to fatigue 非单调加载的格里菲斯断裂描述及其在疲劳中的应用
Pub Date : 2024-04-20 DOI: arxiv-2404.13466
Subhrangsu Saha, John E. Dolbow, Oscar Lopez-Pamies
With the fundamental objective of establishing the universality of theGriffith energy competition to describe the growth of large cracks in solidsemph{not} just under monotonic but under general loading conditions, thispaper puts forth a generalization of the classical Griffith energy competitionin nominally elastic brittle materials to arbitrary emph{non-monotonic}quasistatic loading conditions, which include monotonic and cyclic loadings asspecial cases. Centered around experimental observations, the idea consists in:$i$) viewing the critical energy release rate $mathcal{G}_c$ emph{not} as amaterial constant but rather as a material function of both space $textbf{X}$and time $t$, $ii$) one that decreases in value as the loading progresses, thissolely within a small region $Omega_ell(t)$ around crack fronts, with thecharacteristic size $ell$ of such a region being material specific, and $iii$)with the decrease in value of $mathcal{G}_c$ being dependent on the history ofthe elastic fields in $Omega_ell(t)$. By construction, the proposed Griffithformulation is able to describe any Paris-law behavior of the growth of largecracks in nominally elastic brittle materials for the limiting case when theloading is cyclic. For the opposite limiting case when the loading ismonotonic, the formulation reduces to the classical Griffith formulation.Additional properties of the proposed formulation are illustrated via aparametric analysis and direct comparisons with representative fatigue fractureexperiments on a ceramic, mortar, and PMMA.
本文的基本目标是建立格里菲斯能量竞争的普遍性,以描述固体(emph{不}仅在单调加载条件下,而是在一般加载条件下)大裂缝的生长,本文提出了在名义弹性脆性材料中经典格里菲斯能量竞争的一般化,以适应任意(emph{非单调}类静态加载条件,包括单调加载和循环加载等特殊情况。以实验观察为中心,其思路包括i$) 将临界能量释放率 $mathcal{G}_c$ emph{not}视为一个物质常数,而是空间 $textbf{X}$ 和时间 $t$ 的物质函数;ii$) 随着加载的进行,临界能量释放率的值会减小、(iii)随着加载的进行,其值会减小,但这仅仅是在裂缝前沿周围的一个小区域内,该区域的特征尺寸为 $Omega_ell(t)$,而该区域的材料是特定的;(iii)$mathcal{G}_c$值的减小取决于$Omega_ell(t)$中弹性场的历史。根据构造,在循环加载的极限情况下,所提出的格里菲斯公式能够描述名义弹性脆性材料中大裂纹生长的任何巴黎定律行为。通过参数分析以及与陶瓷、砂浆和聚甲基丙烯酸甲酯的代表性疲劳断裂实验的直接比较,说明了所提公式的其他特性。
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引用次数: 0
Observation of Young's double-slit phenomenon in anti-PT-symmetric electrical circuits 观测反PT对称电路中的杨氏双缝现象
Pub Date : 2024-04-17 DOI: arxiv-2404.11084
Xiumei Wang, Keyu Pan, Xizhou Shen, Xingping Zhou
In the last few decades, interference has been extensively studied in boththe quantum and classical fields, which reveals light volatility and is widelyused for high-precision measurements. We have put forward the phenomenon inwhich the discrete diffraction and interference phenomena, presented by thetime-varying voltage of a Su-Schrieffer-Heeger (SSH) circuit model with ananti-PT symmetry (APT) symmetry. To demonstrate Young's double-slit phenomenonin an APT circuit, we initially explore the coupled mode theory (CMT) ofvoltage in the broken phase, observe discrete diffraction under singleexcitation and interference under double excitations. Furthermore, we design aphase-shifting circuit to observe the effects of phase difference and distanceon discrete interference. Our work combines the effects in optics withcondensed matter physics, show the Young's double-slit phenomenon in electricalcircuits theoretically and experimentally.
在过去几十年中,量子和经典领域都对干涉进行了广泛研究,它揭示了光的波动性,并被广泛用于高精度测量。我们提出了一种现象,即具有反 PT 对称性(APT)的苏-施里弗-希格(SSH)电路模型的时变电压所呈现的离散衍射和干涉现象。为了证明 APT 电路中的杨氏双缝现象,我们首先探索了断相电压的耦合模式理论(CMT),观察了单激励下的离散衍射和双激励下的干涉。此外,我们还设计了一个移相电路,以观察相位差和距离对离散干涉的影响。我们的工作将光学效应与凝聚态物理相结合,从理论和实验上展示了电路中的杨氏双缝现象。
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引用次数: 0
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arXiv - PHYS - Other Condensed Matter
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