Oktay Aktas, Francisco Javier Romero, Zhengwang He, Gan Linyu, Xiangdong Ding, José-María Martín-Olalla, Maria-Carmen Gallardo, Turab Lookman
We study the phase transition behavior of the ferroelectric BaTi$_{0.8}$Zr$_{0.2}$O$_3$ in the paraelectric region. The temperature dependencies of thermal, polar, elastic and dielectric properties indicate the presence of local structures above the paraelectric-ferroelectric transition temperature Tc = 292 K. The non-zero remnant polarization is measured up to a characteristic temperature T* ~350 K, which coincides with the temperature where the dielectric constant deviates from Curie-Weiss law. Resonant Piezoelectric Spectroscopy shows that DC field-cooling above Tc using fields smaller than the coercive field leads to an elastic response and remnant piezoelectricity below T*, which likely corresponds to the coherence temperature associated with polar nanostructures in ferroelectrics. The observed remnant effect is attributed to the reorientation of polar nanostructures above Tc.
我们研究了铁电体 BaTi$_{0.8}$Zr$_{0.2}$O$_3$ 在副电区的相变行为。热、极性、弹性和介电性质的温度依赖性表明,在副介电-铁电转变温度 Tc = 292 K 以上存在局部结构。在特征温度 T* ~350 K 以下测量到了非零残余极化,这与介电常数偏离居里-韦斯定律的温度相吻合。共振压电光谱显示,使用小于矫顽力场的场在 Tc 以上进行直流场冷却会导致弹性响应和低于 T* 的残余压电,这可能与铁电中极性纳米结构相关的相干温度一致。所观察到的残余效应归因于极性纳米结构在 Tc 以上的重新定向。
{"title":"Phase transition and polar cluster behavior above Curie temperature in ferroelectric BaTi$_{0.8}$Zr$_{0.2}$O$_3$","authors":"Oktay Aktas, Francisco Javier Romero, Zhengwang He, Gan Linyu, Xiangdong Ding, José-María Martín-Olalla, Maria-Carmen Gallardo, Turab Lookman","doi":"arxiv-2404.19558","DOIUrl":"https://doi.org/arxiv-2404.19558","url":null,"abstract":"We study the phase transition behavior of the ferroelectric\u0000BaTi$_{0.8}$Zr$_{0.2}$O$_3$ in the paraelectric region. The temperature\u0000dependencies of thermal, polar, elastic and dielectric properties indicate the\u0000presence of local structures above the paraelectric-ferroelectric transition\u0000temperature Tc = 292 K. The non-zero remnant polarization is measured up to a\u0000characteristic temperature T* ~350 K, which coincides with the temperature\u0000where the dielectric constant deviates from Curie-Weiss law. Resonant\u0000Piezoelectric Spectroscopy shows that DC field-cooling above Tc using fields\u0000smaller than the coercive field leads to an elastic response and remnant\u0000piezoelectricity below T*, which likely corresponds to the coherence\u0000temperature associated with polar nanostructures in ferroelectrics. The\u0000observed remnant effect is attributed to the reorientation of polar\u0000nanostructures above Tc.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"96 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140826965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. E. Abrão, E. Santos, J. L. Costa, J. G. S. Santos, J. B. S. Mendes, A. Azevedo
We investigate anomalous spin and orbital Hall phenomena in antiferromagnetic (AF) materials via orbital pumping experiments. Conducting spin and orbital pumping experiments on YIG/Pt/Ir20Mn80 heterostructures, we unexpectedly observe strong spin and orbital anomalous signals in an out-of-plane configuration. We report a sevenfold increase in the signal of the anomalous inverse orbital Hall effect (AIOHE) compared to conventional effects. Our study suggests expanding the Orbital Hall angle ({theta}_OH) to a rank 3 tensor, akin to the Spin Hall angle ({theta}_SH), to explain AIOHE. This work pioneers converting spin-orbital currents into charge current, advancing the spin-orbitronics domain in AF materials.
{"title":"Anomalous Spin and Orbital Hall Phenomena in Antiferromagnetic Systems","authors":"J. E. Abrão, E. Santos, J. L. Costa, J. G. S. Santos, J. B. S. Mendes, A. Azevedo","doi":"arxiv-2404.18712","DOIUrl":"https://doi.org/arxiv-2404.18712","url":null,"abstract":"We investigate anomalous spin and orbital Hall phenomena in antiferromagnetic\u0000(AF) materials via orbital pumping experiments. Conducting spin and orbital\u0000pumping experiments on YIG/Pt/Ir20Mn80 heterostructures, we unexpectedly\u0000observe strong spin and orbital anomalous signals in an out-of-plane\u0000configuration. We report a sevenfold increase in the signal of the anomalous\u0000inverse orbital Hall effect (AIOHE) compared to conventional effects. Our study\u0000suggests expanding the Orbital Hall angle ({theta}_OH) to a rank 3 tensor,\u0000akin to the Spin Hall angle ({theta}_SH), to explain AIOHE. This work pioneers\u0000converting spin-orbital currents into charge current, advancing the\u0000spin-orbitronics domain in AF materials.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"53 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140826994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. M. Sheverdyaeva, G. Bihlmayer, E. Cappelluti, D. Pacilé, F. Mazzola, N. Atodiresei, M. Jugovac, I. Grimaldi, G. Contini, A. K. Kundu, I. Vobornik, J. Fujii, P. Moras, C. Carbone, L. Ferrari
We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the Eu-intercalation of graphene/Ni(111) restores the nearly freestanding dispersion of the $pipi^ast$ Dirac cones at the K point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu states. The interaction with the magnetic substrate results in a large spin-dependent gap in the Dirac cones with a topological nature characterized by a large Berry curvature, and a spin-polarized van Hove singularity, whose closeness to the Fermi level gives rise to a polaronic band.
我们详细分析了石墨烯/Eu/Ni(111)的电子特性。通过使用角度和自旋分辨光发射光谱以及 ab initio 计算,我们发现石墨烯/Eu/Ni(111)的 Eu 互掺恢复了 K 点的($/pi/pi^ast/$)狄拉克锥的近乎独立的分散性,同时由于石墨烯和 Eu 态的混合,额外地解除了自旋不均匀性。与磁性基底的相互作用导致了具有拓扑性质的狄拉克锥中的大自旋间隙,其特征是大贝里曲率和spin-polarized van Hove奇异性,其与费米级的接近性产生了极子带。
{"title":"Spin-dependent $π$$π^{ast}$ gap in graphene on a magnetic substrate","authors":"P. M. Sheverdyaeva, G. Bihlmayer, E. Cappelluti, D. Pacilé, F. Mazzola, N. Atodiresei, M. Jugovac, I. Grimaldi, G. Contini, A. K. Kundu, I. Vobornik, J. Fujii, P. Moras, C. Carbone, L. Ferrari","doi":"arxiv-2404.17887","DOIUrl":"https://doi.org/arxiv-2404.17887","url":null,"abstract":"We present a detailed analysis of the electronic properties of\u0000graphene/Eu/Ni(111). By using angle and spin-resolved photoemission\u0000spectroscopy and ab initio calculations, we show that the Eu-intercalation of\u0000graphene/Ni(111) restores the nearly freestanding dispersion of the\u0000$pipi^ast$ Dirac cones at the K point with an additional lifting of the spin\u0000degeneracy due to the mixing of graphene and Eu states. The interaction with\u0000the magnetic substrate results in a large spin-dependent gap in the Dirac cones\u0000with a topological nature characterized by a large Berry curvature, and a\u0000spin-polarized van Hove singularity, whose closeness to the Fermi level gives\u0000rise to a polaronic band.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140827182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present a machine learning method for swiftly identifying nanobubbles in graphene, crucial for understanding electronic transport in graphene-based devices. Nanobubbles cause local strain, impacting graphene's transport properties. Traditional techniques like optical imaging are slow and limited for characterizing multiple nanobubbles. Our approach uses neural networks to analyze graphene's density of states, enabling rapid detection and characterization of nanobubbles from electronic transport data. This method swiftly enumerates nanobubbles and surpasses conventional imaging methods in efficiency and speed. It enhances quality assessment and optimization of graphene nanodevices, marking a significant advance in condensed matter physics and materials science. Our technique offers an efficient solution for probing the interplay between nanoscale features and electronic properties in two-dimensional materials.
{"title":"Neural network-based recognition of multiple nanobubbles in graphene","authors":"Subin Kim, Nojoon Myoung, Seunghyun Jun, Ara Go","doi":"arxiv-2404.15658","DOIUrl":"https://doi.org/arxiv-2404.15658","url":null,"abstract":"We present a machine learning method for swiftly identifying nanobubbles in\u0000graphene, crucial for understanding electronic transport in graphene-based\u0000devices. Nanobubbles cause local strain, impacting graphene's transport\u0000properties. Traditional techniques like optical imaging are slow and limited\u0000for characterizing multiple nanobubbles. Our approach uses neural networks to\u0000analyze graphene's density of states, enabling rapid detection and\u0000characterization of nanobubbles from electronic transport data. This method\u0000swiftly enumerates nanobubbles and surpasses conventional imaging methods in\u0000efficiency and speed. It enhances quality assessment and optimization of\u0000graphene nanodevices, marking a significant advance in condensed matter physics\u0000and materials science. Our technique offers an efficient solution for probing\u0000the interplay between nanoscale features and electronic properties in\u0000two-dimensional materials.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140803558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. David Hinostroza, Leandro Rodrigues de Faria, Gustavo H. Cassemiro, J. Larrea Jiménez, Antonio Jefferson da Silva Machado, Walber H. Brito, Valentina Martelli
The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around $T_Psim 300$K, which separates a high-temperature $beta$ phase ($T>T_P$) from a low-temperature $alpha$ phase ($T