Pub Date : 2002-01-01DOI: 10.1201/9781351074629-112
Y. Kikuchi, T. Kubo, M. Kase
This paper compares scanning capacitance microscope (SCM) signals of an n-MOS transistor implanted with arsenic ions at an energy as low as 5 keV with a vertical secondary ion mass spectroscopy (SIMS) profile of the same device. Then, it describes SCM measurement by the application of a DC voltage sufficient to compensate for the flat band shift caused by the interaction between the probe of a conductive scanning probe microscope (SPM) and a silicon surface. To acquire the exact impurity distribution beneath a silicon surface, the SIMS measurement was carried out at a primary ion energy of less than 1 keV. As a result, the calibration of SCM signals using SIMS data was accomplished in the ultra shallow region near the silicon surface. It was also confirmed that the formalism based on the depletion approximation applies in this region. Using this formalism, we show that, at concentrations around 10 1 8 cm - 3 , SCM enables quantitative two-dimensional dopant profiling near the source/drain extension at a resolution of better than 10 nm. Moreover, by optimizing the sample preparation and measurement conditions, it is also possible to analyze a sub-μm gate transistor with a 60 nm channel length and investigate the complex dopant distribution in the source/drain region, including the edge of the shallow trench isolation.
本文将能量低至5kev的砷离子注入n-MOS晶体管的扫描电容显微镜(SCM)信号与同一器件的垂直二次离子质谱(SIMS)谱图进行了比较。然后，它描述了通过应用直流电压来补偿由导电扫描探针显微镜(SPM)的探针与硅表面之间的相互作用引起的平坦带移的单片机测量。为了获得硅表面下精确的杂质分布，SIMS测量是在一次离子能量小于1 keV的情况下进行的。利用SIMS数据在靠近硅表面的超浅区域完成了单片机信号的标定。还证实了基于耗竭近似的形式主义适用于该区域。使用这种形式，我们表明，在浓度约为10 - 18 cm - 3时，SCM可以在源/漏极附近以优于10 nm的分辨率进行定量二维掺杂谱分析。此外，通过优化样品制备和测量条件，还可以分析60 nm通道长度的亚μm栅极晶体管，并研究包括浅沟槽隔离边缘在内的源/漏区复杂掺杂分布。
{"title":"Quantitative ultra shallow dopant profile measurement by scanning capacitance microscope","authors":"Y. Kikuchi, T. Kubo, M. Kase","doi":"10.1201/9781351074629-112","DOIUrl":"https://doi.org/10.1201/9781351074629-112","url":null,"abstract":"This paper compares scanning capacitance microscope (SCM) signals of an n-MOS transistor implanted with arsenic ions at an energy as low as 5 keV with a vertical secondary ion mass spectroscopy (SIMS) profile of the same device. Then, it describes SCM measurement by the application of a DC voltage sufficient to compensate for the flat band shift caused by the interaction between the probe of a conductive scanning probe microscope (SPM) and a silicon surface. To acquire the exact impurity distribution beneath a silicon surface, the SIMS measurement was carried out at a primary ion energy of less than 1 keV. As a result, the calibration of SCM signals using SIMS data was accomplished in the ultra shallow region near the silicon surface. It was also confirmed that the formalism based on the depletion approximation applies in this region. Using this formalism, we show that, at concentrations around 10 1 8 cm - 3 , SCM enables quantitative two-dimensional dopant profiling near the source/drain extension at a resolution of better than 10 nm. Moreover, by optimizing the sample preparation and measurement conditions, it is also possible to analyze a sub-μm gate transistor with a 60 nm channel length and investigate the complex dopant distribution in the source/drain region, including the edge of the shallow trench isolation.","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"19 1","pages":"75-81"},"PeriodicalIF":0.1,"publicationDate":"2002-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87995990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have developed a laser hermetic sealing technique that combines nickel plating with laser welding for copper and copper alloy bellows for general purpose large‐scale computers. Laser welding of copper has been difficult because of copper's high thermal conductivity and reflectivity. However, laser welding nickel‐plated copper results in deep penetration. To avoid corrosion induced at the dissimilar metal contact between nickel and copper, the nickel‐plated copper was heat‐treated before welding to obtain a nickel‐copper solid solution. Then, the optimum plating thickness and heat‐treatment conditions were determined. A 10 μm‐thick nickel plating, heat‐treated for 1 h at 1000°C was found to be best suited to laser welding. These conditions make the laser weld of copper and copper alloy strong. Tests indicate that this technique is suitable for laser welding copper and copper alloys.
{"title":"Laser welding of copper and copper alloys","authors":"K. Shimizu, K. Hashimoto","doi":"10.2351/1.4745272","DOIUrl":"https://doi.org/10.2351/1.4745272","url":null,"abstract":"We have developed a laser hermetic sealing technique that combines nickel plating with laser welding for copper and copper alloy bellows for general purpose large‐scale computers. Laser welding of copper has been difficult because of copper's high thermal conductivity and reflectivity. However, laser welding nickel‐plated copper results in deep penetration. To avoid corrosion induced at the dissimilar metal contact between nickel and copper, the nickel‐plated copper was heat‐treated before welding to obtain a nickel‐copper solid solution. Then, the optimum plating thickness and heat‐treatment conditions were determined. A 10 μm‐thick nickel plating, heat‐treated for 1 h at 1000°C was found to be best suited to laser welding. These conditions make the laser weld of copper and copper alloy strong. Tests indicate that this technique is suitable for laser welding copper and copper alloys.","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"103 1","pages":"310-315"},"PeriodicalIF":0.1,"publicationDate":"1991-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85844004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Perpendicular magnetic recording","authors":"J. Toda, K. Kiuchi, H. Wakamatsu","doi":"10.3379/jmsjmag.18.s2_5","DOIUrl":"https://doi.org/10.3379/jmsjmag.18.s2_5","url":null,"abstract":"","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"63 1","pages":"428-437"},"PeriodicalIF":0.1,"publicationDate":"1990-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85278344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-01-01DOI: 10.1007/978-1-4613-9868-4_54
Y. Suzuki, E. Horikoshi, K. Niwa
{"title":"Magnetic Properties and Ferromagnetic Shielding of Ni-Fe-Mo Alloys at Cryogenic Temperatures","authors":"Y. Suzuki, E. Horikoshi, K. Niwa","doi":"10.1007/978-1-4613-9868-4_54","DOIUrl":"https://doi.org/10.1007/978-1-4613-9868-4_54","url":null,"abstract":"","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"55 4 1","pages":"469-474"},"PeriodicalIF":0.1,"publicationDate":"1984-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83334475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：