首页 > 最新文献

2019 Austrochip Workshop on Microelectronics (Austrochip)最新文献

英文 中文
A Current-Feedback Amplifier with Programmable Gain for MEMS Microphone Read-Out Circuits 用于MEMS麦克风读出电路的可编程增益电流反馈放大器
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00012
Luca Sant, E. Bach, R. Gaggl, A. Baschirotto
This work presents a read-out amplifier for capacitive sensors, in particular for MEMS microphones, based on a current-feedback topology. This architecture allows for an extensive gain range while keeping the input impedance as well as the amplifier bandwidth independent of the selected gain. Noise performance is maximized and signal attenuation due to parasitic effects is minimized and stays constant at all gain settings. This architecture has been used for the design of an interface circuit for a MEMS microphone in a standard 0.13µm CMOS process.
这项工作提出了一种基于电流反馈拓扑的电容式传感器读出放大器,特别是用于MEMS麦克风。这种结构允许广泛的增益范围,同时保持输入阻抗以及放大器带宽与所选增益无关。噪声性能最大化,信号衰减由于寄生效应最小化,并保持恒定在所有增益设置。该架构已用于标准0.13 μ m CMOS工艺的MEMS麦克风接口电路的设计。
{"title":"A Current-Feedback Amplifier with Programmable Gain for MEMS Microphone Read-Out Circuits","authors":"Luca Sant, E. Bach, R. Gaggl, A. Baschirotto","doi":"10.1109/Austrochip.2019.00012","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00012","url":null,"abstract":"This work presents a read-out amplifier for capacitive sensors, in particular for MEMS microphones, based on a current-feedback topology. This architecture allows for an extensive gain range while keeping the input impedance as well as the amplifier bandwidth independent of the selected gain. Noise performance is maximized and signal attenuation due to parasitic effects is minimized and stays constant at all gain settings. This architecture has been used for the design of an interface circuit for a MEMS microphone in a standard 0.13µm CMOS process.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"23 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87931222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Program Time Effects on Total Ionizing Dose Tolerance of Sidewall Spacer Memory Bit Cell 程序时间对侧壁间隔器存储位单元总电离剂量耐受的影响
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00021
Tommaso Vincenzi, G. Schatzberger, A. Michalowska-Forsyth
This paper presents a charge-based Non-Volatile Memory device: the Sidewall Spacer. Multiple TSMC 55nm dies were tested up to 100krad to explore the effect of the programming time on data retention.
本文提出了一种基于电荷的非易失性存储器件:侧壁间隔器。测试了多个台积电55nm芯片高达100krad,以探索编程时间对数据保留的影响。
{"title":"Program Time Effects on Total Ionizing Dose Tolerance of Sidewall Spacer Memory Bit Cell","authors":"Tommaso Vincenzi, G. Schatzberger, A. Michalowska-Forsyth","doi":"10.1109/Austrochip.2019.00021","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00021","url":null,"abstract":"This paper presents a charge-based Non-Volatile Memory device: the Sidewall Spacer. Multiple TSMC 55nm dies were tested up to 100krad to explore the effect of the programming time on data retention.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"6 1","pages":"55-58"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89114203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Survey and Comparison of Digital Logic Simulators 数字逻辑模拟器的调查与比较
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00027
P. Roessler, R. Höller, C. Reisner, O. Maischberger
This work provides an overview of digital logic simulators which are the classical tools for verification of digital hardware. Existing simulators and their features are presented and both commercial simulators as well as tools from the open-source community are included in our survey. Furthermore, the tools have been evaluated using a set of benchmark designs. All of the evaluation designs are freely available over the internet and have been carefully selected so that everybody can prove the results presented herein. To the authors best knowledge this is the first public available overview on existing digital logic simulators since 20 years.
这项工作提供了数字逻辑模拟器的概述,这是验证数字硬件的经典工具。现有模拟器及其功能介绍和商业模拟器以及开源社区的工具都包含在我们的调查。此外,使用一组基准设计对这些工具进行了评估。所有的评估设计都是在互联网上免费提供的,并且是经过精心挑选的,所以每个人都可以证明这里提出的结果。据作者所知,这是20年来首次公开概述现有数字逻辑模拟器。
{"title":"Survey and Comparison of Digital Logic Simulators","authors":"P. Roessler, R. Höller, C. Reisner, O. Maischberger","doi":"10.1109/Austrochip.2019.00027","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00027","url":null,"abstract":"This work provides an overview of digital logic simulators which are the classical tools for verification of digital hardware. Existing simulators and their features are presented and both commercial simulators as well as tools from the open-source community are included in our survey. Furthermore, the tools have been evaluated using a set of benchmark designs. All of the evaluation designs are freely available over the internet and have been carefully selected so that everybody can prove the results presented herein. To the authors best knowledge this is the first public available overview on existing digital logic simulators since 20 years.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"22 1","pages":"87-92"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73765655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Time-Delay Estimation for Self-Interference Cancellation in LTE-A/5G Transceivers LTE-A/5G收发器自干扰消除的时延估计
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00016
T. Paireder, C. Motz, O. Lang, M. Huemer
Transmitter-to-receiver (Tx-Rx) leakage is a widely covered downside of state-of-the-art frequency division duplex radio frequency transceivers for use in mobile communication devices. Despite the distance between Tx and Rx carrier frequencies, non-idealities of the analog front-end cause receiver desensitization by folding transmit signal components into the Rx baseband. In literature, several countermeasures for this self-interference issue have been proposed, including fully-digital and mixed-signal mitigation strategies. Both methods employ signal estimation techniques in the digital domain to replicate and cancel the interference. An apparent issue of these methods is the unknown and usually time-varying delay of the leakage signal through the analog front-end of the device. Insufficient alignment of the signals used by the estimator causes severe degradation of the cancellation performance. In this work, we provide a mathematical analysis of a linear system identification scenario in the presence of an alignment mismatch. Based on these results, we present two low-complexity algorithms for static time-delay estimation and online tracking, accompanied by suitable digital hardware implementations. With focus on the particularly challenging signal statistics of Long Term Evolution (LTE) signals, we show the expectable performance of the algorithms for a specific linear self-interference cancellation task.
发射机到接收机(Tx-Rx)泄漏是用于移动通信设备的最先进的频分双工射频收发器的一个广泛覆盖的缺点。尽管Tx和Rx载波频率之间存在距离,但模拟前端的非理想性通过将发射信号分量折叠到Rx基带而导致接收器脱敏。在文献中,针对这种自干扰问题提出了几种对策,包括全数字和混合信号缓解策略。两种方法都采用数字域的信号估计技术来复制和消除干扰。这些方法的一个明显问题是未知的,通常时变的延迟泄漏信号通过设备的模拟前端。估计器使用的信号对准不足会导致对消性能的严重下降。在这项工作中,我们提供了在存在对准不匹配的情况下线性系统识别场景的数学分析。基于这些结果,我们提出了两种低复杂度的静态时延估计和在线跟踪算法,并配有合适的数字硬件实现。重点关注长期演进(LTE)信号的特别具有挑战性的信号统计,我们展示了特定线性自干扰消除任务的算法的预期性能。
{"title":"Time-Delay Estimation for Self-Interference Cancellation in LTE-A/5G Transceivers","authors":"T. Paireder, C. Motz, O. Lang, M. Huemer","doi":"10.1109/Austrochip.2019.00016","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00016","url":null,"abstract":"Transmitter-to-receiver (Tx-Rx) leakage is a widely covered downside of state-of-the-art frequency division duplex radio frequency transceivers for use in mobile communication devices. Despite the distance between Tx and Rx carrier frequencies, non-idealities of the analog front-end cause receiver desensitization by folding transmit signal components into the Rx baseband. In literature, several countermeasures for this self-interference issue have been proposed, including fully-digital and mixed-signal mitigation strategies. Both methods employ signal estimation techniques in the digital domain to replicate and cancel the interference. An apparent issue of these methods is the unknown and usually time-varying delay of the leakage signal through the analog front-end of the device. Insufficient alignment of the signals used by the estimator causes severe degradation of the cancellation performance. In this work, we provide a mathematical analysis of a linear system identification scenario in the presence of an alignment mismatch. Based on these results, we present two low-complexity algorithms for static time-delay estimation and online tracking, accompanied by suitable digital hardware implementations. With focus on the particularly challenging signal statistics of Long Term Evolution (LTE) signals, we show the expectable performance of the algorithms for a specific linear self-interference cancellation task.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"33 1","pages":"21-28"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91330743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 16-nm FinFET Power- and Phase Noise-Scalable DCO using On-Chip Tapped Inductor 采用片上抽头电感的16nm FinFET功率和相位噪声可扩展DCO
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00022
E. Hager, S. Broussev, H. Pretl
In this paper a Digitally-Controlled Oscillator (DCO) with configurable power consumption and phase-noise is presented. The DCO provides two different power/phase-noise modes while maintaining an almost constant figure-of-merit (FoM) by using a tapped inductor in the LC tank. For each mode (low-power and low-noise mode) a different DCO core is selected, which either connects to the outer taps of the tank inductor or to the inner ones. The presented design achieves a tuning range of 25.9 % with a center frequency of 4.88 GHz at a FoM of approximately 185 dBc/Hz. The DCO concept is simulated in a 16 nm FinFET CMOS process.
本文提出了一种功耗和相位噪声可配置的数字控制振荡器(DCO)。DCO提供两种不同的功率/相位噪声模式,同时通过在LC槽中使用抽头电感保持几乎恒定的性能因数(FoM)。对于每种模式(低功耗和低噪声模式),选择不同的DCO核心,该核心连接到水箱电感器的外部抽头或连接到内部抽头。该设计实现了25.9%的调谐范围,中心频率为4.88 GHz, FoM约为185 dBc/Hz。在16纳米FinFET CMOS工艺中模拟了DCO概念。
{"title":"A 16-nm FinFET Power- and Phase Noise-Scalable DCO using On-Chip Tapped Inductor","authors":"E. Hager, S. Broussev, H. Pretl","doi":"10.1109/Austrochip.2019.00022","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00022","url":null,"abstract":"In this paper a Digitally-Controlled Oscillator (DCO) with configurable power consumption and phase-noise is presented. The DCO provides two different power/phase-noise modes while maintaining an almost constant figure-of-merit (FoM) by using a tapped inductor in the LC tank. For each mode (low-power and low-noise mode) a different DCO core is selected, which either connects to the outer taps of the tank inductor or to the inner ones. The presented design achieves a tuning range of 25.9 % with a center frequency of 4.88 GHz at a FoM of approximately 185 dBc/Hz. The DCO concept is simulated in a 16 nm FinFET CMOS process.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"111 1","pages":"59-64"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76239007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Fast High-Resolution Time-to-Digital Converter Implemented in a Zynq 7010 SoC 在zynq7010 SoC中实现的快速高分辨率时间-数字转换器
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00017
M. Adamič, A. Trost
A high-resolution time-to-digital converter (TDC) was implemented on a Red Pitaya board, featuring a Xilinx Zynq 7010 fully programmable 28-nm system on chip (SoC). The TDC is based on an internal tapped delay line for fine time measurements. First experimental results point towards very high performance of the design, achieving 350 MHz clock speed and sub 20 ps time resolution. The work is part of a Master thesis research and serves as a demonstration of what is possible today with a fairly simple design and a low-cost modern FPGA. The chip used is the smallest dual-core Zynq-7000 device, which makes development boards like Red Pitaya easily affordable for universities. We make good use of on-board Linux to send gathered data via Ethernet to a PC client with a graphical user interface to access the TDC. The design is fully customizable and comes in the form of an independent TDC channel IP core. This offers the possibility of easily implementing TDC systems with an arbitrary number of TDC channels.
高分辨率时间-数字转换器(TDC)在Red Pitaya板上实现,采用赛灵思Zynq 7010全可编程28纳米片上系统(SoC)。TDC基于内部抽头延迟线进行精细时间测量。第一个实验结果表明,该设计具有非常高的性能,实现了350 MHz的时钟速度和低于20 ps的时间分辨率。这项工作是硕士论文研究的一部分,并作为一个相当简单的设计和低成本的现代FPGA今天可能实现的演示。使用的芯片是最小的双核Zynq-7000设备,这使得像Red Pitaya这样的开发板很容易为大学所负担。我们很好地利用板载Linux将收集到的数据通过以太网发送到具有图形用户界面的PC客户端,以访问TDC。该设计是完全可定制的,并以独立的TDC通道IP核的形式出现。这提供了使用任意数量的TDC通道轻松实现TDC系统的可能性。
{"title":"A Fast High-Resolution Time-to-Digital Converter Implemented in a Zynq 7010 SoC","authors":"M. Adamič, A. Trost","doi":"10.1109/Austrochip.2019.00017","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00017","url":null,"abstract":"A high-resolution time-to-digital converter (TDC) was implemented on a Red Pitaya board, featuring a Xilinx Zynq 7010 fully programmable 28-nm system on chip (SoC). The TDC is based on an internal tapped delay line for fine time measurements. First experimental results point towards very high performance of the design, achieving 350 MHz clock speed and sub 20 ps time resolution. The work is part of a Master thesis research and serves as a demonstration of what is possible today with a fairly simple design and a low-cost modern FPGA. The chip used is the smallest dual-core Zynq-7000 device, which makes development boards like Red Pitaya easily affordable for universities. We make good use of on-board Linux to send gathered data via Ethernet to a PC client with a graphical user interface to access the TDC. The design is fully customizable and comes in the form of an independent TDC channel IP core. This offers the possibility of easily implementing TDC systems with an arbitrary number of TDC channels.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"104 1","pages":"29-34"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79531540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A Comparison of All-Digital Transmitter Architectures for Cellular Handsets 蜂窝手机全数字发射机结构的比较
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00015
D. Hamidovic, J. Markovic, P. Preyler, C. Mayer, Mario Huemer, Andreas Springer
In this paper, an overview of different RF transmitter architectures, based on the RF-DAC implementation is given. The evolution of different types of architectures is displayed with the explanation of the main advantages and limitations and/or challenges of each architecture in usage for today's and future cellular handset-applications. The block diagrams of each architecture are shown and the most important parameters are compared across the different implementations. Additionally, the impact of a non-ideal 50% duty-cycle of the RF LO on the spectrum of the RF signal, generated by the RF-DAC is shown.
本文概述了基于RF- dac实现的不同射频发射机架构。展示了不同类型架构的演变,并解释了每种架构在当今和未来的蜂窝手机应用中使用的主要优势、限制和/或挑战。每个体系结构的框图都被显示出来,并且在不同的实现中比较了最重要的参数。此外,还显示了RF- dac产生的RF信号频谱中RF LO的非理想50%占空比的影响。
{"title":"A Comparison of All-Digital Transmitter Architectures for Cellular Handsets","authors":"D. Hamidovic, J. Markovic, P. Preyler, C. Mayer, Mario Huemer, Andreas Springer","doi":"10.1109/Austrochip.2019.00015","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00015","url":null,"abstract":"In this paper, an overview of different RF transmitter architectures, based on the RF-DAC implementation is given. The evolution of different types of architectures is displayed with the explanation of the main advantages and limitations and/or challenges of each architecture in usage for today's and future cellular handset-applications. The block diagrams of each architecture are shown and the most important parameters are compared across the different implementations. Additionally, the impact of a non-ideal 50% duty-cycle of the RF LO on the spectrum of the RF signal, generated by the RF-DAC is shown.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"82 1","pages":"14-20"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78201137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization of On-Chip Interconnects: Case Study in 28 nm CMOS Technology 片上互连的表征:28nm CMOS技术的案例研究
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00028
Arash Ebrahimi Jarihani, Sahar Sarafi, Michael Köberle, J. Sturm, A. Tonello
Performance of a high-speed network on a chip is mainly affected by the performance of the global on-chip interconnects. This paper investigates a point-to-point transmission line interconnect to address the performance limitations due to the scaling problems of on-chip global interconnects in new CMOS technologies. A brief explanation is given about the basic properties of the transmission lines that should be considered. Moreover, the design methodology is given for designing the on-chip interconnect and understanding its behavior. Based on the different transmission line geometry, 3D EM simulations are done and S-parameters are carried out to analyze the effects of the different metal layers, width of the signal line, and space to shield layers of the interconnect. This results in a systematic understanding of the design of the on-chip interconnect and its performance dependence on various parameters. Finally, a 5 mm length on-chip lossy transmission line with serpentine shape and shielding layers is implemented in 8-metal-layer 28 nm CMOS standard technology.
片上高速网络的性能主要受全局片上互连性能的影响。本文研究了一种点对点传输线互连,以解决新CMOS技术中由于片上全局互连的缩放问题而导致的性能限制。简要说明应考虑的传输线的基本特性。此外,还给出了设计片上互连和理解其行为的设计方法。根据不同的传输线几何形状,进行了三维电磁仿真,并进行了s参数分析,分析了不同金属层、信号线宽度和互连屏蔽层间距的影响。这使得系统地了解片上互连的设计及其对各种参数的性能依赖。最后,采用8金属层28nm CMOS标准技术,实现了具有蛇形和屏蔽层的5 mm长片上损耗传输线。
{"title":"Characterization of On-Chip Interconnects: Case Study in 28 nm CMOS Technology","authors":"Arash Ebrahimi Jarihani, Sahar Sarafi, Michael Köberle, J. Sturm, A. Tonello","doi":"10.1109/Austrochip.2019.00028","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00028","url":null,"abstract":"Performance of a high-speed network on a chip is mainly affected by the performance of the global on-chip interconnects. This paper investigates a point-to-point transmission line interconnect to address the performance limitations due to the scaling problems of on-chip global interconnects in new CMOS technologies. A brief explanation is given about the basic properties of the transmission lines that should be considered. Moreover, the design methodology is given for designing the on-chip interconnect and understanding its behavior. Based on the different transmission line geometry, 3D EM simulations are done and S-parameters are carried out to analyze the effects of the different metal layers, width of the signal line, and space to shield layers of the interconnect. This results in a systematic understanding of the design of the on-chip interconnect and its performance dependence on various parameters. Finally, a 5 mm length on-chip lossy transmission line with serpentine shape and shielding layers is implemented in 8-metal-layer 28 nm CMOS standard technology.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"90 1","pages":"93-99"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74742046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Analysis of Common-Mode Isolation on Transformer Based Balun 基于Balun的变压器共模隔离分析
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00024
Graciele Batistell, Sina Mortezazadeh Mahani, Suchendranath Popuri, Ajinkya Kale, J. Sturm, W. Bösch
This paper presents the circuit analysis of a transformer based balun with emphasis on the improvement of Common-Mode Isolation (CMI). Critical parameters are identified based on the initial analysis of the transformer equivalent circuit. Additionally, the influence of the transformers load impedance and the use of Center-Tap (CT) on CMI enhancement are presented. EM simulations of two transformers, a stacked and an interleaved version, designed in 65 nm CMOS technology are presented. The CMI performance of both the transformers is compared to the proposed circuit model and the effect of layout and geometry is also analyzed. Finally, guidelines are presented for the design of transformer based baluns with improved CMI performance.
本文介绍了一种基于平衡器的变压器的电路分析,重点介绍了其共模隔离性能的改进。在对变压器等效电路进行初步分析的基础上,确定了关键参数。此外,还讨论了变压器负载阻抗和中心抽头(CT)的使用对CMI增强的影响。介绍了采用65纳米CMOS技术设计的堆叠型和交错型变压器的电磁仿真。将两种变压器的CMI性能与所提出的电路模型进行了比较,并分析了布局和几何形状的影响。最后,提出了改进CMI性能的基于变压器的平衡器的设计准则。
{"title":"Analysis of Common-Mode Isolation on Transformer Based Balun","authors":"Graciele Batistell, Sina Mortezazadeh Mahani, Suchendranath Popuri, Ajinkya Kale, J. Sturm, W. Bösch","doi":"10.1109/Austrochip.2019.00024","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00024","url":null,"abstract":"This paper presents the circuit analysis of a transformer based balun with emphasis on the improvement of Common-Mode Isolation (CMI). Critical parameters are identified based on the initial analysis of the transformer equivalent circuit. Additionally, the influence of the transformers load impedance and the use of Center-Tap (CT) on CMI enhancement are presented. EM simulations of two transformers, a stacked and an interleaved version, designed in 65 nm CMOS technology are presented. The CMI performance of both the transformers is compared to the proposed circuit model and the effect of layout and geometry is also analyzed. Finally, guidelines are presented for the design of transformer based baluns with improved CMI performance.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"154 1","pages":"71-75"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80386145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Half-Rate Built-In Self-Test for High-Speed Serial Interface using a PRBS Generator and Checker 使用PRBS发生器和检查器的高速串行接口半速率内置自检
Pub Date : 2019-10-01 DOI: 10.1109/Austrochip.2019.00019
Ram Ratnaker Reddy Bodha, Sahar Sarafi, Ajinkya Kale, M. Koberle, J. Sturm
In this work, a half-rate built-in self-test (BIST) system is proposed to enable bit error rate measurement without the need for off-chip subsystems such as memory and PRBS generator. The proposed BIST system consists of a half-rate series-parallel PRBS generator with a unique pattern to self-synchronize the received data stream with the reference data at the half-rate bit error checker. The proposed BIST system schematic is implemented in 0.9V, 28nm CMOS technology for a 10 Gbps on-chip serial data transmission system. The RMS jitter at the PRBS generator output is evaluated to be 1.45 ps with post-layout simulation considering the output loading in nominal conditions. The PRBS generator and bit error checker consumed total power of 5.225 mW in nominal conditions.
在这项工作中,提出了一种半速率内置自检(BIST)系统,使误码率测量不需要片外子系统,如存储器和PRBS发生器。所提出的BIST系统由一个半速率串并联PRBS发生器组成,该发生器具有独特的模式,可以在半速率误码检查器上自同步接收到的数据流和参考数据。提出的BIST系统原理图采用0.9V, 28nm CMOS技术实现,用于10gbps片上串行数据传输系统。考虑到标称条件下的输出负载,经过布局后仿真,PRBS发电机输出端的RMS抖动评估为1.45 ps。在标称条件下,PRBS发电机和误码检查器消耗的总功率为5.225 mW。
{"title":"A Half-Rate Built-In Self-Test for High-Speed Serial Interface using a PRBS Generator and Checker","authors":"Ram Ratnaker Reddy Bodha, Sahar Sarafi, Ajinkya Kale, M. Koberle, J. Sturm","doi":"10.1109/Austrochip.2019.00019","DOIUrl":"https://doi.org/10.1109/Austrochip.2019.00019","url":null,"abstract":"In this work, a half-rate built-in self-test (BIST) system is proposed to enable bit error rate measurement without the need for off-chip subsystems such as memory and PRBS generator. The proposed BIST system consists of a half-rate series-parallel PRBS generator with a unique pattern to self-synchronize the received data stream with the reference data at the half-rate bit error checker. The proposed BIST system schematic is implemented in 0.9V, 28nm CMOS technology for a 10 Gbps on-chip serial data transmission system. The RMS jitter at the PRBS generator output is evaluated to be 1.45 ps with post-layout simulation considering the output loading in nominal conditions. The PRBS generator and bit error checker consumed total power of 5.225 mW in nominal conditions.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"41 3 1","pages":"43-46"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85774673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
期刊
2019 Austrochip Workshop on Microelectronics (Austrochip)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1