The study examines the foci of the strongest earthquakes in the Russian segment of the Arctic, which have occurred over the entire period of observations, starting from 1976 to the present. The stress and strain fields have been studied through the analysis of the seismic moment tensor of the registered earthquakes. This analysis is conducted for the first time. Spatial distributions of the Lode–Nadai coefficient and the rate of seismotectonic strain have been obtained.
In this study, the magnetic, structural, and electronic properties of Pt/[Pt/Co]({}_{4})/Pt thin film was investigated both experimentally and theoretically. The effects of crystal orientation on magnetic behavior in the primitive cell were investigated via the first-principles methods. Band structures, total and partial density of states was calculated as the electronic properties. Magneto-optical Kerr effect and ferromagnetic resonance techniques were carried out to determine magnetic properties. The magnetic behavior of Pt/[Pt/Co]({}_{4})/Pt in microscopic framework is revealed by the spin asymmetry in the density of states around the Fermi level. The perpendicular magnetic anisotropy is found to be more favorable for the Pt/[Pt/Co]({}_{4})/Pt with (111) orientation. It was seen that the crystal orientation of Pt/[Pt/Co]({}_{4})/Pt has a critical role on the magnetic properties according to the band magnetism calculations.
The alloys studied in this work are of interest for the needs of hydrogen energy, electronics, pharmacology. The goal is to identify the regularities of the evolution of defect subsystems, which is necessary for the development of processes to improve the performance indicators of metallic systems. An analysis of the imperfections of the crystal lattice of the alloys Pd ({}_{93.5}) In ({}_{6.0}) Ru ({}_{0.5}) (numerical indices—mass (%) ) and Pd ({}_{100-x}) Pb ({}_{x}) ( (x=5) , (8) , (12) , (16) , (20) mass (%) ) was carried out based on the results of X-ray diffraction using synchrotron radiation (SR) from the Kurchatov Research Center. An assessment of the probability of the presence in palladium-based membrane alloys of two-dimensional defects of the crystal lattice, affecting the structure-sensitive properties of materials—packing defects (PD), was conducted. The dependence of the probability of PD formation on the concentration and type of the doping element in palladium has been established.
Iron chalcogenides intercalated with alkali metal atoms attract the attention of physicists due to their unusual natural phase segregation, where superconducting clusters form at the boundaries of the antiferromagnetic phase. In this work, using photoelectron spectroscopy, we discovered an unusual effect that presumably arises due to this phase segregation. We studied temperature dependences of the photoelectron spectra of Se 3d, Fe 3p, and the valence band at temperatures above and below (T_{c}approx 27) K of the compound (K ({}_{0.8}) Na ({}_{0.2}) ) ({}_{0.8}) Fe ({}_{1.8}) Se ({}_{2}) with substitution of alkali metal atoms. A strong temperature dependence was found for both the valence band and the core levels: we observed a significant broadening of the spectra, which monotonically decreased with increasing sample temperature under cyclical temperature change. We believe that this broadening is associated with the appearance of volume charges in the dielectric matrix, leading to the band bending. Moreover, the shape of the potential that arises under the surface of this compound was restored, and an estimate was obtained for the relative amount of the superconducting phase. These results will help to better understand the physical processes occurring in this compound.
In the study, numerical results of simulations for the deposition process of a complex optical coating are presented, utilizing broadband monitoring of this process in the case where the noise level in the measured transmittance coefficient has a nonuniform distribution across the wavelength. The influence on the accuracy of control data at the edges of the measured wavelength range, where the error in the transmittance coefficient is maximal, is investigated. It is shown that the removal of some data at the edges of the range almost does not change the self-compensation factor of the errors in the deposition process, while the average norm of the error vector in the layer thicknesses significantly decreases. Thus, for the first time, it is demonstrated that taking into account the effect of error self-compensation in broadband control opens the possibility of a reasonable choice of the optimal spectral range for practical optical control.
Composite films of (Cd ({}_{3}) As ({}_{2}) ) ({}_{100-X}) (MnAs) ({}_{X}) on silicon and sitall substrates with Mn concentration of 5.8–16.4 at (%) were obtained by vacuum-thermal evaporation. The structural properties of the films were investigated by X-ray phase analysis and scanning electron microscopy. Magneto-optical properties were studied using the transverse Kerr effect (TKE) method in the energy range of 0.5–4.0 eV in magnetic fields up to 3 kOe at temperatures of 20–300 K. In the geometry of the transverse Kerr effect, the spectral, field, and temperature dependences of TKE were obtained. Analysis of experimental data showed that at Mn contents more than 12.9 at (%) the films contain the (alpha^{primeprime}) -phase of the topological Dirac semimetal Cd ({}_{3}) As ({}_{2}) in the form of large granules, as well as ferromagnetic MnAs granules. The Curie temperature of the films depends on their Mn content and is lower than that of bulk MnAs samples. At Mn contents in the film of 5.8 and 6.4 at (%) , no magneto-optical response was detected, indicating the formation of a superparamagnetic state or a spin glass state at low Mn concentrations. At an Mn content in the film of 9.9 at (%) , a significant change in magneto-optical spectra was observed, indicating the formation of MnAs nanoclusters and partial dissolution of Mn in the Cd ({}_{3}) As ({}_{2}) matrix.
Hafnium oxide films HfO ({}_{x}) with a thickness of about 40 nm were obtained by electron beam sputtering at different oxygen flow rates in the chamber. The electrophysical properties of the films were studied in air and in a vacuum. It has been shown that the temperature dependences of film conductivity, measured in a vacuum in the temperature range from 20 to 180 ({}^{circ}) C, have an activation character with an activation energy of 0.82 (pm) 0.02 eV. It is assumed that in the resulting films, charge transfer is determined by the activation of electrons into the conduction band from the donor level associated with oxygen vacancies. It was found that the conductivity of the films in air changes greatly with varying the oxygen flow, while in a vacuum, the conductivity is practically independent of the oxygen flow. This indicates significant differences in the surface properties of the films obtained at different oxygen flows in the chamber during the deposition process.
The possibilities of engineering energy losses, created in the cascade process of electron-electron scattering during the interaction of multilayer dielectric structures with ionizing radiation, are considered. It is shown that the contribution of surface plasmons associated with layer boundaries to electron energy losses is significant only for nanometer layer thicknesses and increases with increasing electron energy. At the same time, surface states associated with longitudinal optical phonons in ionic crystals significantly change energy losses during electron thermalization and can lead to an increase in the efficiency and rise rate of scintillation in nanostructured systems.
An analysis of both experimental and theoretical data on the study of preferential sputtering of nickel-based and copper-platinum alloys under ion beam bombardment has been carried out. Contrary to existing models, it has been shown that the main factor determining the process of preferential sputtering is the ratio of the surface binding energies of the components.
The previously proposed method of molecular dynamics modelling for the sputter deposition of thin films from metal targets has been adapted for the case of dielectric targets and applied to silicon dioxide films. The possibility of the ejection from targets of not only silicon atoms but also clusters with oxygen atoms is taken into account by adding O=Si=O molecules to the flow of deposited atoms. Atomistic film clusters have been obtained at high-energy and low-energy sputter deposition with various percentages of molecules in the flow of deposited atoms. The values of the stress tensor components have been calculated. Compressive stresses are observed at high-energy deposition, while tensile stresses are observed at low-energy deposition. The absolute values of the diagonal components of the stress tensor increase with the increasing proportion of molecules in the flow of deposited atoms.
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：