Quantum frontiers最新文献

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Group-theoretical study of band nodes and the emanating nodal structures in crystalline materials 晶体材料中的带节点和发散节点结构的群论研究

Quantum frontiers

Pub Date : 2024-08-08 DOI: 10.1007/s44214-024-00060-6

F. Tang, Xiangang Wan

引用次数: 0

The origin of the large T c variation in FeSe thin films probed by dual-beam pulsed laser deposition. 通过双束脉冲激光沉积探究 FeSe 薄膜中 T c 变化大的原因。

Quantum frontiers

Pub Date : 2024-01-01 Epub Date: 2024-06-08 DOI: 10.1007/s44214-024-00058-0

Zhongpei Feng, Hua Zhang, Jie Yuan, Xingyu Jiang, Xianxin Wu, Zhanyi Zhao, Qiuhao Xu, Valentin Stanev, Qinghua Zhang, Huaixin Yang, Lin Gu, Sheng Meng, Suming Weng, Qihong Chen, Ichiro Takeuchi, Kui Jin, Zhongxian Zhao

FeSe is one of the most enigmatic superconductors. Among the family of iron-based compounds, it has the simplest chemical makeup and structure, and yet it displays superconducting transition temperature ( $T_{c}$ ) spanning 0 to 15 K for thin films, while it is typically 8 K for single crystals. This large variation of $T_{c}$ within one family underscores a key challenge associated with understanding superconductivity in iron chalcogenides. Here, using a dual-beam pulsed laser deposition (PLD) approach, we have fabricated a unique lattice-constant gradient thin film of FeSe which has revealed a clear relationship between the atomic structure and the superconducting transition temperature for the first time. The dual-beam PLD that generates laser fluence gradient inside the plasma plume has resulted in a continuous variation in distribution of edge dislocations within a single film, and a precise correlation between the lattice constant and $T_{c}$ has been observed here, namely, $T_{c} \propto \sqrt{c - c_{0}}$ , where c is the c-axis lattice constant (and $c_{0}$ is a constant). This explicit relation in conjunction with a theoretical investigation indicates that it is the shifting of the $d_{xy}$ orbital of Fe which plays a governing role in the interplay between nematicity and superconductivity in FeSe.

Supplementary information: The online version contains supplementary material available at 10.1007/s44214-024-00058-0.

FeSe 是最神秘的超导体之一。在铁基化合物家族中，它的化学组成和结构最简单，但它的薄膜超导转变温度（T c）却在 0 到 15 K 之间，而单晶体的温度通常为 8 K。一个家族中 T c 的巨大差异凸显了了解铁铬镓化合物超导性的关键挑战。在这里，我们利用双光束脉冲激光沉积（PLD）方法，制造出了一种独特的晶格恒定梯度硒化铁薄膜，首次揭示了原子结构与超导转变温度之间的明确关系。在等离子体羽流内部产生激光通量梯度的双光束 PLD 使单层薄膜内的边缘位错分布发生了连续变化，并在此观察到了晶格常数与 T c 之间的精确相关性，即 T c ∝ c - c 0，其中 c 为 c 轴晶格常数（c 0 为常数）。这种明确的关系与理论研究相结合表明，铁的 d xy 轨道移动在 FeSe 的向列性与超导性之间的相互作用中起着支配作用：在线版本包含补充材料，可查阅 10.1007/s44214-024-00058-0。

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引用次数: 0

Large positive magnetoresistance and high mobility in topological insulator candidate LaP 大正磁阻和高迁移率的拓扑绝缘体候选LaP

Quantum frontiers

Pub Date : 2023-11-10 DOI: 10.1007/s44214-023-00038-w

Desheng Wu, Jianlin Luo

Abstract We reported herein the single crystal growth and the comprehensive study of basic physical properties including electronic transport, magnetic, specific heat of topological insulator candidate LaP. Single crystal LaP of rock salt type structure was synthesized by Sn flux method. Under low temperature and high magnetic field of $T= 2$ T = 2 K and $B= 9$ B = 9 T, large positive magnetoresistance (LMR) of 500% was discovered. The Hall effect measurements show that the conduction carriers are dominated by holes among the temperature range from 300 K to 2 K, the carrier concentration $n_{h} =4.94times 10^{19}$ n h = 4.94 × 10 19 cm −3 and $n_{e} =5.02times 10^{16}$ n e = 5.02 × 10 16 cm −3 and the mobility of LaP reached as high as $mu _{h}=1.57times 10^{4}$ μ h = 1.57 × 10 4 cm 2 V −1 S −1 and $mu _{e} = 1.55times 10^{3}$ μ e = 1.55 × 10 3 cm 2 V −1 S −1 obtained at 2 K, which can be explained by multiband model physics like other topological quantum material systems with large MR. LaP shows diamagnetism over a wide temperature range from 2 K to 300 K without any magnetic phase transition by susceptibility measurements. No evidence of phase transitions from 2 K to 300 K was observed in the specific heat measurement. The electronic specific heat coefficient is obtained 0.538 m J mol −1 K −2 for LaP single crystal, which responds to a small electron density state near the Fermi level. Our results would be helpful in renewing interest in studying emergent phenomena arisen from topological semimetals. LaP offers a platform for understanding the interactions between large magnetoresistance, high mobility an

摘要本文报道了拓扑绝缘体候选材料LaP的单晶生长和电子输运、磁性、比热等基本物理性质的综合研究。采用锡熔剂法合成了岩盐型结构的LaP单晶。在$T= 2$ T= 2 K和$B= 9$ B= 9 T的低温强磁场下，发现了500%的大正磁电阻(LMR)。霍尔效应测量表明,该导电载体是由洞中温度范围从300 K到2 K,载体浓度美元n_ {h} = 4.94 * 10 ^ {19} $ n h = 4.94×10 19厘米−3和美元n_ {e} = 5.02 * 10 ^ {16} $ n e = 5.02×10 16厘米−3和大腿上的流动高达$ μ_ {h} = 1.57 * 10 ^{4} $μh = 1.57×10 4厘米2 V−1 S−1美元μ_ {e} = 1.55 * 10 ^{3} $μe = 1.55×10 3厘米2 V−1 S−1在2 K,获得这可以用多带模型物理来解释，就像其他具有大mr LaP的拓扑量子材料系统一样，在2 K到300 K的宽温度范围内显示抗磁性，而通过磁化率测量没有任何磁相变。在比热测量中没有观察到从2 K到300 K相变的证据。LaP单晶的电子比热系数为0.538 m J mol−1 K−2，响应于费米能级附近的小电子密度态。我们的结果将有助于重新唤起人们对拓扑半金属产生的突现现象的研究兴趣。LaP为理解大磁阻、高迁移率和拓扑带结构之间的相互作用提供了一个平台。

{"title":"Large positive magnetoresistance and high mobility in topological insulator candidate LaP","authors":"Desheng Wu, Jianlin Luo","doi":"10.1007/s44214-023-00038-w","DOIUrl":"https://doi.org/10.1007/s44214-023-00038-w","url":null,"abstract":"Abstract We reported herein the single crystal growth and the comprehensive study of basic physical properties including electronic transport, magnetic, specific heat of topological insulator candidate LaP. Single crystal LaP of rock salt type structure was synthesized by Sn flux method. Under low temperature and high magnetic field of $T= 2$ <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"> <mml:mi>T</mml:mi> <mml:mo>=</mml:mo> <mml:mn>2</mml:mn> </mml:math> K and $B= 9$ <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"> <mml:mi>B</mml:mi> <mml:mo>=</mml:mo> <mml:mn>9</mml:mn> </mml:math> T, large positive magnetoresistance (LMR) of 500% was discovered. The Hall effect measurements show that the conduction carriers are dominated by holes among the temperature range from 300 K to 2 K, the carrier concentration $n_{h} =4.94times 10^{19}$ <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"> <mml:msub> <mml:mi>n</mml:mi> <mml:mi>h</mml:mi> </mml:msub> <mml:mo>=</mml:mo> <mml:mn>4.94</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow> <mml:mn>19</mml:mn> </mml:mrow> </mml:msup> </mml:math> cm −3 and $n_{e} =5.02times 10^{16}$ <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"> <mml:msub> <mml:mi>n</mml:mi> <mml:mi>e</mml:mi> </mml:msub> <mml:mo>=</mml:mo> <mml:mn>5.02</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow> <mml:mn>16</mml:mn> </mml:mrow> </mml:msup> </mml:math> cm −3 and the mobility of LaP reached as high as $mu _{h}=1.57times 10^{4}$ <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"> <mml:msub> <mml:mi>μ</mml:mi> <mml:mi>h</mml:mi> </mml:msub> <mml:mo>=</mml:mo> <mml:mn>1.57</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow> <mml:mn>4</mml:mn> </mml:mrow> </mml:msup> </mml:math> cm 2 V −1 S −1 and $mu _{e} = 1.55times 10^{3}$ <mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"> <mml:msub> <mml:mi>μ</mml:mi> <mml:mi>e</mml:mi> </mml:msub> <mml:mo>=</mml:mo> <mml:mn>1.55</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml:msup> </mml:math> cm 2 V −1 S −1 obtained at 2 K, which can be explained by multiband model physics like other topological quantum material systems with large MR. LaP shows diamagnetism over a wide temperature range from 2 K to 300 K without any magnetic phase transition by susceptibility measurements. No evidence of phase transitions from 2 K to 300 K was observed in the specific heat measurement. The electronic specific heat coefficient is obtained 0.538 m J mol −1 K −2 for LaP single crystal, which responds to a small electron density state near the Fermi level. Our results would be helpful in renewing interest in studying emergent phenomena arisen from topological semimetals. LaP offers a platform for understanding the interactions between large magnetoresistance, high mobility an","PeriodicalId":74629,"journal":{"name":"Quantum frontiers","volume":"119 33","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135137158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controllable phase transition of two-dimensional ferromagnetic chromium telluride thin films grown by molecular beam epitaxy 分子束外延生长二维铁磁碲化铬薄膜的可控相变

Quantum frontiers

Pub Date : 2023-11-01 DOI: 10.1007/s44214-023-00037-x

Haili Huang, Jinbo Shen, Jiayi Chen, Qia Shen, Gaoting Lin, Zhen Zhu, Jiangtao Wu, Jie Ma, Hao Yang, Xiaoxue Liu, Liang Liu, Dandan Guan, Shiyong Wang, Yaoyi Li, Canhua Liu, Hao Zheng, Yunhao Lu, Jinfeng Jia

Abstract Two-dimensional (2D) Cr (1+ δ ) Te 2 materials exhibit strong magnetic ordering and high Curie temperatures, making them attractive for various applications. It is crucial to achieve controllable synthesis for their successful integration into device technologies. In this study, we present the synthesis of phase-controllable 2D Cr (1+ δ ) Te 2 films on the Si (111) substrate via molecular beam epitaxy. The composition and phase transition of the as-grown Cr (1+ δ ) Te 2 films are characterized by using in-situ reflection high-energy electron diffraction, scanning tunneling microscopy, ex-situ X-ray photoelectron spectroscopy, X-ray diffraction, and theoretical calculations. At low growth temperatures, by carefully adjusting the film thickness from 2 to more than 3 layers, we achieve precise control over the phase of Cr (1+ δ ) Te 2 , from CrTe 2 to Cr intercalated Cr 2 Te 3 . At a relatively elevated growth temperature, it is demonstrated that the Cr (1+ δ ) Te 2 phase is independent of the film thickness, only Cr 2 Te 3 forms and its growth mode is thickness-dependent. These phase transitions at low growth temperatures and growth mode changes at elevated growth temperatures are attributed to interfacial effects and the phase stability of Cr (1+ δ ) Te 2 compounds. Additionally, we utilize scanning tunneling spectroscopy and computations to gain insights into the electronic properties of Cr 2 Te 3 . The magnetic measurements reveal that the 30-nm Cr 2 Te 3 film exhibits ferromagnetic behavior with a Curie temperature of about 180 K. Our work offers a robust method for the controllable growth of high-quality 2D Cr (1+ δ ) Te 2 films on Si substrates, providing an ideal platform for investigating their intrinsic properties and advancing the development of 2D magnet-based spintronics devices.

二维(2D) Cr (1+ δ) Te 2材料具有强磁有序性和高居里温度，使其在各种应用中具有吸引力。实现可控合成是将其成功集成到器件技术中的关键。在本研究中，我们采用分子束外延的方法在Si(111)衬底上合成了相位可控的二维Cr (1+ δ) Te 2薄膜。采用原位反射高能电子衍射、扫描隧道显微镜、非原位x射线光电子能谱、x射线衍射和理论计算等方法对生长Cr (1+ δ) Te 2薄膜的组成和相变进行了表征。在低生长温度下，通过仔细调整薄膜厚度从2层到3层以上，我们实现了对Cr (1+ δ) Te 2的相的精确控制，从CrTe 2到Cr嵌入的cr2te 3。在较高的生长温度下，Cr (1+ δ) Te 2相与薄膜厚度无关，仅形成cr2te 3相，且其生长模式与薄膜厚度有关。这些低生长温度下的相变和高生长温度下的生长模式变化归因于界面效应和Cr (1+ δ) Te 2化合物的相稳定性。此外，我们利用扫描隧道光谱和计算来深入了解cr2te 3的电子性质。磁性测量结果表明，在居里温度为180k左右的情况下，30nm的cr2te - 3薄膜具有铁磁性。我们的工作为在Si衬底上可控地生长高质量的2D Cr (1+ δ) Te 2薄膜提供了一种稳健的方法，为研究其内在特性和推进二维磁性自旋电子学器件的发展提供了理想的平台。

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引用次数: 0

Interface-enhanced superconductivity in monolayer 1T′-MoTe2 on SrTiO3(001) SrTiO3上单层1T ' -MoTe2的界面增强超导性(001)

Quantum frontiers

Pub Date : 2023-08-25 DOI: 10.1007/s44214-023-00034-0

Bo Yang, Chenxiao Zhao, B. Xia, Haiyang Ma, Hongyuan Chen, Jie Cai, Hao Yang, Xiaoxue Liu, Liang Liu, D. Guan, Shiyong Wang, Yaoyi Li, Canhua Liu, Hao Zheng, Jinfeng Jia

引用次数: 0

Ferromagnetic and insulating behavior in both half magnetic levitation and non-levitation LK-99 like samples 半磁悬浮和非悬浮LK-99类样品的铁磁和绝缘行为

Quantum frontiers

Pub Date : 2023-08-17 DOI: 10.1007/s44214-023-00035-z

Pinyuan Wang, Xiaoqi Liu, Jun Ge, Chen Ji, Haoran Ji, Yanzhao Liu, Yiwen Ai, Gaoxing Ma, S. Qi, Jian Wang

引用次数: 5

Correction: Topological superconductivity in multifold fermion metals 更正：多折叠费米子金属中的拓扑超导性

Quantum frontiers

Pub Date : 2023-07-11 DOI: 10.1007/s44214-023-00032-2

Zheshen Gao, Xue-Jian Gao, Wen-Yu He, Xiao Yan Xu, T. Ng, K. T. Law

引用次数: 0

Correction: Some questions concerning Majorana fermions in 2D (p+ip) Fermi superfluids 更正：关于二维（p+ip）费米超流体中Majorana费米子的一些问题

Quantum frontiers

Pub Date : 2023-07-10 DOI: 10.1007/s44214-023-00033-1

Yiruo Lin, A. Leggett

引用次数: 1

Magnetic bulk photovoltaic effect as a probe of magnetic structures of $mathrm{{EuSn_{2}As_{2}}}$ $ mathm {{EuSn_{2}As_{2}}}$磁性结构的磁体光伏效应探测

Quantum frontiers

Pub Date : 2023-06-15 DOI: 10.1007/s44214-023-00029-x

H. Pi, Shuai Zhang, H. Weng

引用次数: 0

Magnetic field orientation dependence of planar tunneling spectroscopy in the superconducting state of NbSe2 超导状态下NbSe2平面隧穿光谱的磁场取向依赖性

Quantum frontiers

Pub Date : 2023-06-12 DOI: 10.1007/s44214-023-00031-3

Yuantao Ji, Zehao Dong, Hao Wang, Qingyang Li, S. Ye, Zhi-En Gao, Zhenqi Hao, Yayu Wang

引用次数: 0

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