Pub Date : 2018-04-17DOI: 10.1109/TMSCS.2018.2827980
Keita Azegami;Hayate Okuhara;Hideharu Amano
Sensor nodes used in Internet of Things (IoT) are required to work an extremely long time without replacing the battery. Natural renewable energy such as a solar battery is a hopeful candidate for such nodes. Here, a power model for operating an Silicon on Insulator (SOI) device with a solar battery including a large inner resistance is proposed, and applied to a micro-controller V850E-star and an accelerator CMA-SOTB2. Unlike the ideal case, the maximum operational frequency was achieved with reverse biasing by suppressing the leakage current which decreases the supply voltage. Under the room light with a large inner resistance, the strong reverse bias is effective, while a relatively weak reverse bias is advantageous under the bright light. The proposed model is appeared to be useful to estimate the appropriate body bias voltage both for V850E-star and CMA-SOTB2. In the V850E-star, the estimated operational frequencies were different from the real chip, while they were relatively matched when CMA-SOTB2 was used under the low illuminance.
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Spin-Transfer Torque RAM (STT-RAM) has attracted attention as a key element for the Last-Level Cache (LLC) of a future microprocessor. Since STT-RAM has a higher density than SRAM and non-volatility, STT-RAM can contribute to building the cache memory with a larger capacity and a less static energy. However, since STT-RAM changes its magnetization state in the case when storing data, the energy cost of write access requests for an STT-RAM LLC is more expensive than that of an SRAM LLC. As a result, the total energy consumption of the STT-RAM LLC for write-intensive applications may increase. To solve this problem, this paper proposes an Adjacent-Line-Merging Writeback Scheme. Since a larger cache line of an STT-RAM cache can contribute to the reduction in the write energy cost per byte, the upper-level cache merges two adjacent small lines to one large line, and then writes the merged line back to the STT-RAM LLC. Moreover, the larger line size for the LLC leads to a reduction in the static energy cost. The evaluation results show that the proposed scheme can reduce the energy consumption of the STT-RAM LLC by up to 26, and 9.3 percent on average.
{"title":"An Adjacent-Line-Merging Writeback Scheme for STT-RAM-Based Last-Level Caches","authors":"Masayuki Sato;Yoshiki Shoji;Zentaro Sakai;Ryusuke Egawa;Hiroaki Kobayashi","doi":"10.1109/TMSCS.2018.2827955","DOIUrl":"https://doi.org/10.1109/TMSCS.2018.2827955","url":null,"abstract":"Spin-Transfer Torque RAM (STT-RAM) has attracted attention as a key element for the Last-Level Cache (LLC) of a future microprocessor. Since STT-RAM has a higher density than SRAM and non-volatility, STT-RAM can contribute to building the cache memory with a larger capacity and a less static energy. However, since STT-RAM changes its magnetization state in the case when storing data, the energy cost of write access requests for an STT-RAM LLC is more expensive than that of an SRAM LLC. As a result, the total energy consumption of the STT-RAM LLC for write-intensive applications may increase. To solve this problem, this paper proposes an Adjacent-Line-Merging Writeback Scheme. Since a larger cache line of an STT-RAM cache can contribute to the reduction in the write energy cost per byte, the upper-level cache merges two adjacent small lines to one large line, and then writes the merged line back to the STT-RAM LLC. Moreover, the larger line size for the LLC leads to a reduction in the static energy cost. The evaluation results show that the proposed scheme can reduce the energy consumption of the STT-RAM LLC by up to 26, and 9.3 percent on average.","PeriodicalId":100643,"journal":{"name":"IEEE Transactions on Multi-Scale Computing Systems","volume":"4 4","pages":"593-604"},"PeriodicalIF":0.0,"publicationDate":"2018-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TMSCS.2018.2827955","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68025496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper describes a new 120 fps (frames per second) real-time HEVC (High Efficiency Video Coding) encoder for HFR (high frame rate) video encoding and transmission. HFR provides more immersive viewing experience features by solving the problems created by fast moving scenes. Temporally scalable encoding with backward compatibility for legacy non-HFR systems is suitable for the rapid spread of HFR content delivery, avoiding the need to distribute multiple bitstreams of the same video with different frame rates. Such temporal scalability requires flexible encoder control functionalities to support newly-customized reference picture structures and dual-stream bitrate control. In this paper, modification in the customizable software architecture of encoder LSIs makes it possible to achieve 120 fps temporally scalable HEVC encoding for existing 60 fps-based systems. The encoder also achieves ${4mathrm{K}/ 120;mathrm{fps}}$