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NEXAFS identification of a catalytic reaction intermediate: C4H4 on Pd(111) 催化反应中间体C4H4在Pd(111)上的NEXAFS鉴定
Pub Date : 1993-10-01 DOI: 10.1016/0167-2584(93)91042-M
R.M. Ormerod, R.M. Lambert, H. Hoffmann, F. Zaera, J.M. Yao, D.K. Saldin, L.P. Wang, D.W. Bennett, W.T. Tysoe
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引用次数: 0
Erratum to “Surface self-diffusion studies on the W(112) plane by the field emission method” [Surface Science 266 (1992) 30] 对“用场发射法在W(112)平面上的表面自扩散研究”的勘误[表面科学266 (1992)30]
Pub Date : 1993-10-01 DOI: 10.1016/0167-2584(93)91062-S
Yun Ming Gong
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引用次数: 0
Electrons at metal-insulator interfaces 金属绝缘体界面上的电子
Pub Date : 1993-10-01 DOI: 10.1016/0167-2584(93)91054-R
W.R. Merry, R.E. Jordan, D.F. Padowitz, C.B. Harris
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引用次数: 0
Atomic and electronic structure of the Si(001) surface induced by hydrogen-adsorption 氢吸附诱导Si(001)表面的原子和电子结构
Pub Date : 1993-10-01 DOI: 10.1016/0167-2584(93)91039-Q
Toshihiro Uchiyama , Masaru Tsukada

The initial stage of hydrogen (H) adsorption on the Si(001) surface is theoretically investigated to clarify the atomic and electronic structure induced by the adsorption. For this purpose, the electronic states are calculated in the density functional approach with the DV(discretized variation)-Xα-LCAO method. We also simulate the scanning tunneling microscopy (STM) image and the scanning tunneling spectroscopy (STS) spectrum in the first-principles approach. Our results of the STM image do not support the asymmetric dimer structure of the substrate with a H atom bonded to the upper Si atom. They conclude that the bright ball-like spot in the observed images comes from the free dangling bond induced on the remaining Si atom of the reacted dimer. However, the single particle picture cannot reproduce the observed features of the STS spectrum at the spot. We discuss that all the features can be well explained by the Coulomb blockade effect due to the electron correlation in the dangling bond state.

从理论上研究了氢(H)在Si(001)表面吸附的初始阶段,以阐明吸附引起的原子和电子结构。为此,用DV(离散变分)-Xα-LCAO方法在密度泛函方法中计算电子态。我们还用第一性原理方法模拟了扫描隧道显微镜(STM)图像和扫描隧道光谱(STS)光谱。我们的STM图像结果不支持衬底的不对称二聚体结构,其中H原子与上部Si原子键合。他们得出结论,在观察到的图像中,明亮的球状斑点来自于反应二聚体的剩余Si原子上诱导的自由悬空键。然而,单粒子图像不能再现现场观测到的STS光谱特征。我们讨论了所有这些特征都可以用悬空键态中电子相关引起的库仑封锁效应来解释。
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引用次数: 1
Simulation studies of Ge surface segregation during gas source MBE growth of Si/Si1−χGeχ heterostructures Si/Si1异质结构气源MBE生长过程中Ge表面偏析的模拟研究
Pub Date : 1993-10-01 DOI: 10.1016/0167-2584(93)91047-R
N. Ohtani, S.M. Mokler, B.A. Joyce
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引用次数: 0
The Fano-Anderson model applied to electrons in MIS-inversion layers Fano-Anderson模型应用于mis反转层中的电子
Pub Date : 1993-10-01 DOI: 10.1016/0167-2584(93)91053-Q
B. Freytag, U. Rössler
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引用次数: 0
Excitation processes in collisions of inert gas ions with a Mg surface 惰性气体离子与镁表面碰撞的激发过程
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91012-D
S. Lacombe, L. Guillemot, M. Huels , T. Vu Ngoc, V.A. Esaulov

Results of an angle resolved electron spectroscopy study of low keV inert gas ion collisions with a Mg surface are presented. Production of projectile autoionising states is demonstrated to exist not only for the previously known Ne case but also for He. The role of these states in ion production is commented. The characteristics of autoionising peak lineshapes are analysed and suggest a method of obtaining angular distributions of inelastically scattered ions.

本文介绍了低keV惰性气体离子与镁表面碰撞的角度分辨电子能谱研究结果。证明了抛射自离态的产生不仅存在于先前已知的Ne情况下,也存在于He情况下。评述了这些态在离子产生中的作用。分析了自电离峰线形的特点,提出了一种获得非弹性散射离子角分布的方法。
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引用次数: 6
The photo-induced reaction of digermane with the Si(100)(2×1):D surface 二革曼与Si(100)(2×1):D表面的光诱导反应
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91023-H
Chiharu Isobe, Hee-Chuen Cho, John E. Crowell
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引用次数: 0
The photo-induced reaction of disilane with the Si(100) and Si(100)(2×1):D surfaces 二硅烷与Si(100)和Si(100)(2×1):D表面的光诱导反应
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91022-G
Chiharu Isobe, Hee-Chuen Cho, John E. Crowell
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引用次数: 0
A surface spectroscopy study of thin layers of uranium on polycrystalline palladium 多晶钯上铀薄层的表面光谱研究
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91035-M
T. Gouder, C.A. Colmenares
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引用次数: 13
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Surface Science Letters
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