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Growth of stable ultra-high density films of hcp lead on Ru(1010) Ru(1010)上hcp铅稳定超高密度膜的生长
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91006-A
Mintcho Tikhov , Richard M. Lambert

Growth of Pb on Ru(1010) has been investigated at 140 and 300 K by LEED and Auger spectroscopy. The interfacial contact layer evolves through a series of ordered Pb phases “split (2×1)”, c(3×2), c(4×2) - in which the Pb atoms assume their “normal” size. Beyond the monolayer point a c(2×4) phase appears, corresponding to development of compressed quasihexagonal lead overlayer. This phase is followed by a most unusual structure: a (0001)-oriented multilayer film of hexagonally close-packed lead in which the interatomic spacing is much smaller (16%) than that in fcc bulk lead. Furthermore, this spacing (3.02 ± 0.06 Å) is ∼ 9% less than that characteristics of the high pressure hcp phase of bulk lead and therefore corresponds to the most dense form of metallic Pb known. The ultra-high density phase was stable at 300 K and was still observable after heating to ∼ 600 K. No transitions to “normal” hcp or fcc structures occurred over the whole coverage range studied - up to 30 monolayers. These ultra-dense Pb films are also unreactive towards oxygen. In contrast to this, normal density, oxidisable, fcc Pb films are formed other fcc substrates, indicating that the structural and electronic properties of the ultra dense Pb films depend critically on the specific structure of the Ru(1010) substrate.

利用LEED和俄歇光谱研究了Pb在140和300 K下在Ru(1010)上的生长。界面接触层通过一系列有序的Pb相“分裂(2×1)”,c(3×2), c(4×2) -其中Pb原子呈现其“正常”大小。在单层点以外出现c(2×4)相,对应于压缩准六方铅覆层的发育。这个阶段之后是一个最不寻常的结构:一个(0001)取向的多层薄膜,六边形紧密堆积的铅,其中原子间间距比fcc体铅小得多(16%)。此外,该间距(3.02±0.06 Å)比大块铅的高压hcp相的特性小约9%,因此对应于已知的最致密的金属Pb形式。超高密度相在300 K时是稳定的,加热到~ 600 K后仍然可以观察到。在研究的整个覆盖范围(多达30个单层)内,没有发生向“正常”hcp或fcc结构的过渡。这些超致密的铅膜对氧也不反应。与此相反,正常密度的、可氧化的fcc Pb膜在其他fcc衬底上形成,这表明超致密Pb膜的结构和电子性能严重依赖于Ru(1010)衬底的特定结构。
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引用次数: 0
Quantum well resonances in scanning tunneling microscopy 扫描隧道显微镜中的量子阱共振
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91017-I
G. Hörmandinger, J.B. Pendry
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引用次数: 0
Surface diffusivities from concentration profiles 浓度曲线的表面扩散系数
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91030-R
Fumiya Watanabe, Gert Ehrlich
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引用次数: 0
Diffusion of CO on the Mo(110) plane CO在Mo(110)面上的扩散
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91029-N
Y. Song, R. Gomer
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引用次数: 0
Decomposition of hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane on, and diffusion of Cu into single crystal and polycrystalline titanium nitride 六氟乙酰丙酮铜(I)乙烯基三甲基硅烷上的分解,并将Cu扩散成单晶和多晶氮化钛
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91033-K
K.V. Guinn, V.M. Donnelly, M.E. Gross, F.A. Baiocchi, I. Petrov, J.E. Greene
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引用次数: 0
Origin of the different formation modes of the oxygen added row overlayer on Ag(110) and Cu(110) surfaces Ag(110)和Cu(110)表面加氧层不同形成方式的原因
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91013-E
T. Schimizu , M. Tsukuda

Oxygen adsorption on Ag(110) and Cu(110) surfaces has been investigated by means of first-principles total-energy, and force calculations for repeated-slab geometries within the local density approximation (LDA). As for the chemisorption structure, the added row model speculated by the obserbed STM images is confirmed to be one of the stable structures, if bucking of the AgOAg added row and some distortions of the substrate structure are allowed. The adsorbed oxygen atom and noble metal atoms in the added row and in the surface first-layer are relaxed toward the configuration of the minimum total energy in terms of steepest descent method. Moreover comparing the optimized geometrics of the added row model of Ag(110)(n × 1)−O (n = 2, 3) and Cu(110)(2 × 1)−O, we obtain an important clue for the mechanism of the difference in the formation modes of the added row on Ag(110) and Cu(110) surfaces.

氧在Ag(110)和Cu(110)表面的吸附已经通过第一性原理的总能量和力计算在局部密度近似(LDA)内的重复板几何形状进行了研究。对于化学吸附结构,如果允许AgOAg添加行发生屈曲和衬底结构发生一定的变形,则STM图像推测的添加行模型证实为稳定结构之一。根据最陡下降法,添加排和表面第一层中吸附的氧原子和贵金属原子向最小总能量的构型松弛。通过对Ag(110)(n × 1)−O (n = 2,3)和Cu(110)(2 × 1)−O的优化几何模型的比较,得到了Ag(110)和Cu(110)表面添加行形成模式差异机理的重要线索。
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引用次数: 0
XPS study of in-situ oxidation of an FeCr alloy by low pressure oxygen in the presence of water vapor 水蒸气存在下低压氧原位氧化FeCr合金的XPS研究
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91036-N
C. Palacio, H.J. Mathieu, V. Stambouli, D. Landolt
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引用次数: 0
Fe oxychloride desorption from an Fe polycrystalline surface 铁多晶表面氯化铁氧解吸
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91009-D
E. Murray, J. Prasad, J.A. Kelber

We report the formation of an Fe oxychloride species at the surface of an O- and Cl-covered Fe polycrystalline surface below 230 K under UHV conditions. Our data show that FeOCl (amu 107) desorbs at 230 K. For FeCl2 (amu 126) desorption, two desorption peaks are observed at 230 and 620 K in the presence of chemisorbed oxygen. In the absence of oxygen, only one FeCl2 desorption peak at 620 K is observed. Auger electron spectroscopy and temperature programmed desorption studies reveal that the reaction leading to Fe oxychloride formation involves dissociatively adsorbed O and Cl at the Fe surface. These results indicate that chemisorbed or low coordinate oxygen plays an important and previously unsuspected role in chloride-induced corrosion at ferrous surfaces.

我们报道了在特高压条件下,在230 K以下,在O-和cl -覆盖的铁多晶表面上形成了铁氯氧化物。我们的数据表明FeOCl (amu107)在230k时解吸。对于FeCl2 (amu126)的解吸,在230和620 K时,在化学吸附氧的存在下观察到两个解吸峰。在无氧条件下,在620k时只观察到一个FeCl2解吸峰。俄热电子能谱和温度程序解吸研究表明,导致铁氯氧化物形成的反应涉及到在铁表面离解吸附的O和Cl。这些结果表明,化学吸附或低配位氧在亚铁表面氯化物腐蚀中起着重要的作用。
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引用次数: 1
Formation of ordered surface phases in submonolayer B/Si(110) and (Al, B)/Si(110) systems 亚单层B/Si(110)和(Al, B)/Si(110)体系中有序表面相的形成
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91011-C
A.V. Zotov, S.V. Ryzhkov, V.G. Lifshits

The B/Si(110) system with B coverages below 0.1 ML has been studied by LEED-AES (low energy electron diffraction-Auger electron spectroscopy). The (100− 21) reconstruction has been found to form at above 0.07 ML of B. This reconstruction is a particular case of a more general type of superstructures with basic translation vectors, as=(n/2[1110] and bs=[1111]. Reconstructions of this type are observed for a number of adsorbates (Ge, AL, Sb) on the Si(110) surface. The factor n equals 8, 9 and 14 for Ge/Si(110), Al/Si(110) and Sb/Si(110) reconstructions, respectively. For the B/Si(110) reconstruction n = 10, but ordering along the [110] direction is not perfect while the periodicity along the [111] direction is well-defined. The deposition of 0.05 to 0.15 ML of Al onto the B/Si(110) surface produces a well-ordered structure of the above-described type with n = 12. The deposited Al atoms replace the B atoms reducing the boron surface concentration.

采用LEED-AES(低能电子衍射-俄歇电子能谱)对B/Si(110)体系进行了研究。(100−21)重构被发现在高于0.07 ML b时形成,这种重构是具有基本平移向量的更一般类型的上层建筑的特殊情况,as=(n/2[1110]和bs=[1111]。在Si(110)表面上观察到许多吸附物(Ge, AL, Sb)的这种类型的重建。对于Ge/Si(110)、Al/Si(110)和Sb/Si(110)重构,因子n分别为8、9和14。对于B/Si(110)重构n = 10,但沿[110]方向的有序性不完善,而沿[111]方向的周期性很好。在B/Si(110)表面沉积0.05 ~ 0.15 ML的Al会产生n = 12的上述类型的有序结构。沉积的Al原子取代了B原子,降低了硼的表面浓度。
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引用次数: 0
X-ray and UV photoemission studies of mono-, bi- and multilayers of physisorbed molecules: O2 and N2 on graphite 石墨上物理吸附分子:O2和N2的单层、双层和多层的x射线和紫外光发射研究
Pub Date : 1993-09-20 DOI: 10.1016/0167-2584(93)91015-G
H. Tillborg, A. Nilsson, B. Hernnäs, N. Mårtensson, R.E. Palmer
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引用次数: 0
期刊
Surface Science Letters
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