{"title":"Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus","authors":"Lijia Li, C. Cong","doi":"10.37188/cjl.20230015","DOIUrl":"https://doi.org/10.37188/cjl.20230015","url":null,"abstract":"","PeriodicalId":10121,"journal":{"name":"Chinese Journal of Luminescence","volume":"162 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69944382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
： Because metal oxides have good thermal stability and low sensitivity to water/oxygen ， they are used as the most important charge transfer materials in quantum dot light emitting diodes （ QLED ） devices. However ， the charge transfer ability of different metal oxides is different ， and the interface energy level matching problem in differ⁃ ent device structures will cause the charge imbalance and even lead to exciton quenching. Therefore ， in order to ob⁃ tain good device performance ， it is necessary to modify and optimize the interface while ensuring the stability of the material. In this paper ， metal oxides as charge transport layer ， charge injection layer and charge blocking layer are described respectively ， and the development of metal oxides in QLED applications in recent years is summarized by mixing other materials and constructing reasonable device structures
{"title":"Optimization and Research Progress of QLED Performance Based on Metal Oxide Functional Layer","authors":"Meiqi Su, Dandan Zhang","doi":"10.37188/cjl.20230016","DOIUrl":"https://doi.org/10.37188/cjl.20230016","url":null,"abstract":"： Because metal oxides have good thermal stability and low sensitivity to water/oxygen ， they are used as the most important charge transfer materials in quantum dot light emitting diodes （ QLED ） devices. However ， the charge transfer ability of different metal oxides is different ， and the interface energy level matching problem in differ⁃ ent device structures will cause the charge imbalance and even lead to exciton quenching. Therefore ， in order to ob⁃ tain good device performance ， it is necessary to modify and optimize the interface while ensuring the stability of the material. In this paper ， metal oxides as charge transport layer ， charge injection layer and charge blocking layer are described respectively ， and the development of metal oxides in QLED applications in recent years is summarized by mixing other materials and constructing reasonable device structures","PeriodicalId":10121,"journal":{"name":"Chinese Journal of Luminescence","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69944431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jie Wan, S. Ouyang, Yao Ji, Taiyu Duan, Weichao Wang
{"title":"Calculation and Prediction of Quenching Concentration of Nd3+-doped Phosphate Laser Glass","authors":"Jie Wan, S. Ouyang, Yao Ji, Taiyu Duan, Weichao Wang","doi":"10.37188/cjl.20230042","DOIUrl":"https://doi.org/10.37188/cjl.20230042","url":null,"abstract":"","PeriodicalId":10121,"journal":{"name":"Chinese Journal of Luminescence","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69944904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qiaoling Chen, Weiguo Jing, Long-Chen Shang, C. Duan, M. Yin
{"title":"First-principles Calculations on Site Occupancy, Valence State and Luminescent Properties of Transition Metal Activators in Solids","authors":"Qiaoling Chen, Weiguo Jing, Long-Chen Shang, C. Duan, M. Yin","doi":"10.37188/cjl.20230102","DOIUrl":"https://doi.org/10.37188/cjl.20230102","url":null,"abstract":"","PeriodicalId":10121,"journal":{"name":"Chinese Journal of Luminescence","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69948695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
： Due to their unique structures and excellent optoelectronic properties ， two - dimensional （ 2D ） materials and their heterostructures are promising materials for the next generation optoelectronic technology. The dynamic properties of photocarriers have an important influence on the optoelectronic properties of these materials. This re⁃ view discusses the research progress in recent years on the photocarrier dynamics in these materials. In the time do⁃ main ， transient absorption measurements of carrier thermalization ， energy relaxation ， exciton formation ， exciton - ex⁃ citon annihilation ， and exciton recombination in 2D materials are discussed. In the spatial domain ， high - spatial - reso⁃ lution transient absorption microscopy studies of photocarrier in - plane transport properties are introduced. Further⁃ more ， interlayer charge and energy transfer in 2D heterostructures are discussed.
{"title":"Research Progress on Photocarrier Dynamics in Two-dimensional Materials and Their Heterostructures","authors":"D. He, Hui Zhao, Yongsheng Wang","doi":"10.37188/cjl.20230101","DOIUrl":"https://doi.org/10.37188/cjl.20230101","url":null,"abstract":"： Due to their unique structures and excellent optoelectronic properties ， two - dimensional （ 2D ） materials and their heterostructures are promising materials for the next generation optoelectronic technology. The dynamic properties of photocarriers have an important influence on the optoelectronic properties of these materials. This re⁃ view discusses the research progress in recent years on the photocarrier dynamics in these materials. In the time do⁃ main ， transient absorption measurements of carrier thermalization ， energy relaxation ， exciton formation ， exciton - ex⁃ citon annihilation ， and exciton recombination in 2D materials are discussed. In the spatial domain ， high - spatial - reso⁃ lution transient absorption microscopy studies of photocarrier in - plane transport properties are introduced. Further⁃ more ， interlayer charge and energy transfer in 2D heterostructures are discussed.","PeriodicalId":10121,"journal":{"name":"Chinese Journal of Luminescence","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69948589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：