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Nano-scale Interaction of Chloromethane (CH<sub>3</sub>Cl) with the Fe(110) Surface; A van der Waals Calculation 氯甲烷(CH&lt;sub&gt;3&lt;/sub&gt;Cl)与Fe(110)表面的纳米级相互作用范德华计算
Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-09-16 DOI: 10.1380/ejssnt.2023-062
Sherin A. Saraireh
A report of nano-scale interaction of chloromethane (methyl chloride) (CH3Cl) with the Fe(110) surface; van der Waals density functional theory (DFT) study. Physisorption of a CH3Cl molecule via changing the site and orientation of the molecule was studied on the Fe(100) surface using DFT. All reasonable molecular and dissociative adsorption routes of the CH3Cl molecule on the Fe(100) surface have been systematically investigated. Molecular adsorption was considered on four different surface sites with different orientations with Cl, C, and H atoms toward and away from the surface. Chemisorption was considered by decomposition of CH3Cl into a methyl (CH3) group and a Cl atom via a cleavage of the C–Cl bond and by decomposition into a CH2Cl group and a H atom via a cleavage one of the C–H bonds. Chemisorption produces a greater degree of bonding than physisorption.
氯甲烷(甲基氯)(CH3Cl)与Fe(110)表面纳米级相互作用的研究范德华密度泛函理论研究。利用DFT研究了改变CH3Cl分子的位置和取向对其在Fe(100)表面的物理吸附。系统地研究了CH3Cl分子在Fe(100)表面的各种合理的分子和解离吸附途径。研究了Cl、C和H原子在4个不同取向的表面位置上的分子吸附。通过C-Cl键的裂解,CH3Cl分解成一个甲基(CH3)基团和一个Cl原子;通过C-H键的裂解,CH3Cl分解成一个CH2Cl基团和一个H原子。化学吸附比物理吸附产生更大程度的键合。
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引用次数: 0
Design Optimization of High Breakdown Voltage AlGaN/GaN High Electron Mobility Transistor with Insulator Dielectric Passivation Layer 具有绝缘体介质钝化层的高击穿电压AlGaN/GaN高电子迁移率晶体管的设计优化
Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-09-16 DOI: 10.1380/ejssnt.2023-061
Phuc Hong Than, Tho Quang Than
AlGaN/GaN high electron mobility transistors (HEMTs) possess favorable material properties and are compatible with large-scale manufacturing, making them promising as a next-generation power device. However, there is a lack of information available on the effect of an insulator dielectric passivation layer on the breakdown voltage (Vbr) of AlGaN/GaN HEMTs. This study utilizes technology computer aided design to investigate the impact of different insulator dielectric passivation layers, such as SiO2, SiN, Al2O3, and HfO2, on Vbr of AlGaN/GaN HEMTs. Furthermore, the study optimizes the parameters of the field plate length (LFP) and insulator thickness to maximize Vbr of AlGaN/GaN HEMTs. Results indicate that HEMTs with a field plate (FP-HEMTs) have greater Vbr than HEMTs without a field plate (N-HEMTs). With the optimized conditions of a 1.8 µm LFP and a 0.95 µm insulator thickness with HfO2 passivation, Vbr of 1120 V is achieved. The findings suggest that the field plate (FP) and passivation layer can significantly improve the efficiency and reliability of AlGaN/GaN HEMTs while the impact of AlGaN/GaN heterostructure parameters on Vbr is minimal.
AlGaN/GaN高电子迁移率晶体管(hemt)具有良好的材料性能,并且与大规模生产相兼容,使其成为下一代功率器件。然而,缺乏关于绝缘体介质钝化层对AlGaN/GaN hemt击穿电压(Vbr)影响的信息。本研究利用计算机辅助设计技术研究了不同绝缘体介质钝化层(SiO2、SiN、Al2O3和HfO2)对AlGaN/GaN hemt Vbr的影响。此外,本研究还优化了场板长度(LFP)和绝缘子厚度参数,以最大化AlGaN/GaN hemt的Vbr。结果表明,有场板的HEMTs (FP-HEMTs)比没有场板的HEMTs (N-HEMTs)具有更大的Vbr。在LFP为1.8µm、绝缘子厚度为0.95µm、HfO2钝化的优化条件下,Vbr达到1120 V。结果表明,电场板(FP)和钝化层可以显著提高AlGaN/GaN hemt的效率和可靠性,而AlGaN/GaN异质结构参数对Vbr的影响很小。
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引用次数: 0
Structure and Electronic State of Boron Atomic Chains on a Noble Metal (111) Surface 贵金属表面硼原子链的结构和电子态(111)
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-09-07 DOI: 10.1380/ejssnt.2023-058
Y. Tsujikawa, Xiaoni Zhang, M. Horio, Fumio Komori, Takeru Nakashima, Y. Ando, Takahiro Kondo, Iwao Matsuda
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引用次数: 0
MFIG — A Mass Filtered Ion Gauge MFIG——一种质量过滤离子计
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-09-07 DOI: 10.1380/ejssnt.2023-059
Herman Bekman, Jurjen Emmelkamp, Youyou Westland, Dorus Elstgeest, Thomas Mechielsen, Michael Haye, Freek Molkenboer, Norbert Koster, Henk Lensen
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引用次数: 0
Super Hydrophilic Low Refractive Index SiO2 Optical Thin Films Deposited by Using a Combination Coating Method 复合涂层法沉积超亲水低折射率SiO2光学薄膜
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-08-17 DOI: 10.1380/ejssnt.2023-057
M. Ito, Naoya Tajima, H. Murotani, Takayuki Matsudaira
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引用次数: 0
Effects of Relative Humidity on Lubricating Properties of Ionic Liquids 相对湿度对离子液体润滑性能的影响
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-07-20 DOI: 10.1380/ejssnt.2023-056
Shouhei Kawada, Shunsuke Tanji, Jyo Kobayashi, Kaiasei Sato, M. Miyatake, S. Sasaki
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引用次数: 0
Solar Irradiance Absorption Performance of a Spherical Multilayered Nanoparticle Coated with Graphene 石墨烯包覆球形多层纳米粒子对太阳辐射的吸收性能
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-07-20 DOI: 10.1380/ejssnt.2023-055
Fitriyadi, A. Azwar, F. A. Noor
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引用次数: 0
Local Structures of Fe0.08Co0.92 Studied by X-ray Fluorescence Holography Fe0.08Co0.92局域结构的X射线荧光全息研究
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-07-13 DOI: 10.1380/ejssnt.2023-054
Yuto Fukui, Tomoya Kanno, Kota Yamakawa, H. Nakada, Yodai Kobayashi, Keiko Widyanisa, Yuka Tomimatsu, K. Kimura, T. Shishido, N. Happo, K. Ohoyama, Koichi Hayashi
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引用次数: 0
Characterization of Liquid Targets in Vacuum Condition 真空条件下液体靶的表征
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-07-08 DOI: 10.1380/ejssnt.2023-053
K. Yamamoto, N. Ogiwara, Masaya Kuramochi
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引用次数: 0
Rarefied Gas Flow through Long Rectangular Channel with Very Small Gap-to-Width Ratio: Experiments and DSMC Calculations 窄缝窄比长矩形通道的稀薄气体流动:实验和DSMC计算
IF 0.7 Q4 NANOSCIENCE & NANOTECHNOLOGY Pub Date : 2023-07-08 DOI: 10.1380/ejssnt.2023-052
N. Ogiwara, Y. Hori, H. Yoshida, K. Arai
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引用次数: 0
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E-journal of Surface Science and Nanotechnology
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