Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580508
X. Zhang, D. He, D. Maddipatla, Q. Yang, M. Atashbar
A novel integrated multi-wall carbon nanotube /polydimethylsiloxane (MWCNTs/PDMS) and Polyvinylidene Fluoride (PVDF) based flexible triboelectric nanogenerator (TENG) was fabricated for energy harvesting application. The TNEG consists of minimal parts: aluminium (AI) electrode, PVDF layer and MWCNTs/PDMS layer. A surface roughness and thickness of −0.45 µm was measured for the fabricated MWCNT/PDMS respectively. The capability of the TENG in term of open circuit voltage (OCV) and short circuit current (SCC) was investigated by subjecting it to a force of 5 N, 10 N and 15 N at varying frequencies of 3 Hz, 5Hz and 7 Hz respectively. The maximum OCV of 21.6 V and SCC of 1.7 µA was obtained for an applied force of 15 N at frequency 7 Hz, respectively.
{"title":"A Novel Integrated MWCNTs/PDMS based Flexible Triboelectric Nanogenerator","authors":"X. Zhang, D. He, D. Maddipatla, Q. Yang, M. Atashbar","doi":"10.1109/IFETC49530.2021.9580508","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580508","url":null,"abstract":"A novel integrated multi-wall carbon nanotube /polydimethylsiloxane (MWCNTs/PDMS) and Polyvinylidene Fluoride (PVDF) based flexible triboelectric nanogenerator (TENG) was fabricated for energy harvesting application. The TNEG consists of minimal parts: aluminium (AI) electrode, PVDF layer and MWCNTs/PDMS layer. A surface roughness and thickness of −0.45 µm was measured for the fabricated MWCNT/PDMS respectively. The capability of the TENG in term of open circuit voltage (OCV) and short circuit current (SCC) was investigated by subjecting it to a force of 5 N, 10 N and 15 N at varying frequencies of 3 Hz, 5Hz and 7 Hz respectively. The maximum OCV of 21.6 V and SCC of 1.7 µA was obtained for an applied force of 15 N at frequency 7 Hz, respectively.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134601090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580514
R. Riaz, Bhaskar Dudem, M. C. Angeli, Ali Douaki, Mukhtar Ahmed, M. Petrelli, A. Mejia-Aguilar, R. Monsorno, S. R. Silva, P. Lugli, L. Petti
Energy harvesters for smart wearables are gaining increasing attention world-wide. Among the various type of options availabel, triboelectric nanogenerators harvesting mechanical energy from human body movements are especially attractive. In this work, a flexible sandwich-type triboelectric nanogenerator (FS-TENG) based on ridged and biocompatible silicone elastomers and thermoplastic polyurethane is proposed. The proposed FS- TENG exhibits the open-circuit voltages and maximum power density of ~80 volts and 0.35 mW/cm2, respectively. This preliminary performance already makes the device extremely promising to power low energy smart wearable devices, as well as monitor pressure in bespoke biomedical applications.
{"title":"Flexible, biocompatible, and ridged silicone elastomers based robust sandwich-type triboelectric nanogenerator","authors":"R. Riaz, Bhaskar Dudem, M. C. Angeli, Ali Douaki, Mukhtar Ahmed, M. Petrelli, A. Mejia-Aguilar, R. Monsorno, S. R. Silva, P. Lugli, L. Petti","doi":"10.1109/IFETC49530.2021.9580514","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580514","url":null,"abstract":"Energy harvesters for smart wearables are gaining increasing attention world-wide. Among the various type of options availabel, triboelectric nanogenerators harvesting mechanical energy from human body movements are especially attractive. In this work, a flexible sandwich-type triboelectric nanogenerator (FS-TENG) based on ridged and biocompatible silicone elastomers and thermoplastic polyurethane is proposed. The proposed FS- TENG exhibits the open-circuit voltages and maximum power density of ~80 volts and 0.35 mW/cm2, respectively. This preliminary performance already makes the device extremely promising to power low energy smart wearable devices, as well as monitor pressure in bespoke biomedical applications.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127075025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580520
Alexander Scholz, Lukas Zimmermann, A. Sikora, M. Tahoori, J. Aghassi‐Hagmann
Physically Unclonable Functions (PUFs) are hardware-based security primitives, which allow for inherent device fingerprinting. Therefore, intrinsic variation of imperfect manufactured systems is exploited to generate device-specific, unique identifiers. With printed electronics (PE) joining the internet of things (IoT), hardware-based security for novel PE-based systems is of increasing importance. Furthermore, PE offers the possibility for split-manufacturing, which mitigates the risk of PUF response readout by third parties, before commissioning. In this paper, we investigate a printed PUF core as intrinsic variation source for the generation of unique identifiers from a crossbar architecture. The printed crossbar PUF is verified by simulation of a 8×8-cells crossbar, which can be utilized to generate 32-bit wide identifiers. Further focus is on limiting factors regarding printed devices, such as increased parasitics, due to novel materials and required control logic specifications. The simulation results highlight, that the printed crossbar PUF is capable to generate close-to-ideal unique identifiers at the investigated feature size. As proof of concept a 2×2-cells printed crossbar PUF core is fabricated and electrically characterized.
{"title":"Printed Low- Voltage Crossbar-PUF for Identification","authors":"Alexander Scholz, Lukas Zimmermann, A. Sikora, M. Tahoori, J. Aghassi‐Hagmann","doi":"10.1109/IFETC49530.2021.9580520","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580520","url":null,"abstract":"Physically Unclonable Functions (PUFs) are hardware-based security primitives, which allow for inherent device fingerprinting. Therefore, intrinsic variation of imperfect manufactured systems is exploited to generate device-specific, unique identifiers. With printed electronics (PE) joining the internet of things (IoT), hardware-based security for novel PE-based systems is of increasing importance. Furthermore, PE offers the possibility for split-manufacturing, which mitigates the risk of PUF response readout by third parties, before commissioning. In this paper, we investigate a printed PUF core as intrinsic variation source for the generation of unique identifiers from a crossbar architecture. The printed crossbar PUF is verified by simulation of a 8×8-cells crossbar, which can be utilized to generate 32-bit wide identifiers. Further focus is on limiting factors regarding printed devices, such as increased parasitics, due to novel materials and required control logic specifications. The simulation results highlight, that the printed crossbar PUF is capable to generate close-to-ideal unique identifiers at the investigated feature size. As proof of concept a 2×2-cells printed crossbar PUF core is fabricated and electrically characterized.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134184150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580522
Ekin Asim Ozek, Melih Can Tasdelen, Sercan Tanyeli, M. Yapici
Strain sensing is crucial in emerging fields such as artificial/virtual reality applications, Internet-of- Things, and smart wearable devices. Strain sensors for the flexible applications are required to be reliable, structurally sound, and cost-effective for both small and vast fabrication batches. It is a challenging task to meet all the requirements yet reduced graphene oxide films show adequate coating on highly accessible substrates and provide proper figure of merits in terms of piezoresistive strain sensing. In this paper, high throughput single step coating of graphene oxide on flexible substrate and single step material functionalization method is presented for reduced graphene oxide based piezoresistive strain sensing on PET substrate. Physically patterned rGO/PET strain sensors are composed of 2 mm line width along a U-shaped 50 mm outline. Proposed rGO/PET film quality for sensor application was verified by Raman spectroscopy. Operation of the reduced graphene oxide based piezoresistive strain sensor is demonstrated to be repeatable via continuous cyclic bending tests.
{"title":"Strain Sensing Graphene Functionalized PET Films based on a Facile Dip Coating Approach","authors":"Ekin Asim Ozek, Melih Can Tasdelen, Sercan Tanyeli, M. Yapici","doi":"10.1109/IFETC49530.2021.9580522","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580522","url":null,"abstract":"Strain sensing is crucial in emerging fields such as artificial/virtual reality applications, Internet-of- Things, and smart wearable devices. Strain sensors for the flexible applications are required to be reliable, structurally sound, and cost-effective for both small and vast fabrication batches. It is a challenging task to meet all the requirements yet reduced graphene oxide films show adequate coating on highly accessible substrates and provide proper figure of merits in terms of piezoresistive strain sensing. In this paper, high throughput single step coating of graphene oxide on flexible substrate and single step material functionalization method is presented for reduced graphene oxide based piezoresistive strain sensing on PET substrate. Physically patterned rGO/PET strain sensors are composed of 2 mm line width along a U-shaped 50 mm outline. Proposed rGO/PET film quality for sensor application was verified by Raman spectroscopy. Operation of the reduced graphene oxide based piezoresistive strain sensor is demonstrated to be repeatable via continuous cyclic bending tests.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129399399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580510
Mukhtar Ahmad, G. Cantarella, M. C. Angeli, Mallikarjun Madagalam, C. Ebner, M. Ciocca, R. Riaz, Pietro Ibba, M. Petrelli, Ignacio Merino, Nitzan Cohen, P. Lugli, L. Petti
Since its first discovery in 2014, laser-induced graphene (LIG) has gained increasingly attention as a simple and low-cost alternative to printing techniques, which instead require additional materials such as functional ink or adhesive layers. While there are several works on LIG supercapacitors, gas sensors, and triboelectric generators, this method is still very unexplored for antennas, especially if realized on eco-friendly paper substrates. In this paper, we realized a microstrip patch antenna using LIG on a food-derived cellulose-based paper. The antenna was first designed and simulated using a High-Frequency Structure Simulator (HFSS) software, using different values of relative permittivity ϵr (from 2 to 3.6), to understand the impact of laser-induced graphitization of the substrate on the resonance frequency. The subsequently fabricated antenna showed a strong resonance peak of −25dB at 2.4 GHz, corresponding to an ϵr of 2.2, in agreement with experimental results.
{"title":"2.4 GHz Microstrip Patch Antenna Fabricated by Means of Laser Induced Graphitization of a Cellulose-based Paper Substrate","authors":"Mukhtar Ahmad, G. Cantarella, M. C. Angeli, Mallikarjun Madagalam, C. Ebner, M. Ciocca, R. Riaz, Pietro Ibba, M. Petrelli, Ignacio Merino, Nitzan Cohen, P. Lugli, L. Petti","doi":"10.1109/IFETC49530.2021.9580510","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580510","url":null,"abstract":"Since its first discovery in 2014, laser-induced graphene (LIG) has gained increasingly attention as a simple and low-cost alternative to printing techniques, which instead require additional materials such as functional ink or adhesive layers. While there are several works on LIG supercapacitors, gas sensors, and triboelectric generators, this method is still very unexplored for antennas, especially if realized on eco-friendly paper substrates. In this paper, we realized a microstrip patch antenna using LIG on a food-derived cellulose-based paper. The antenna was first designed and simulated using a High-Frequency Structure Simulator (HFSS) software, using different values of relative permittivity ϵr (from 2 to 3.6), to understand the impact of laser-induced graphitization of the substrate on the resonance frequency. The subsequently fabricated antenna showed a strong resonance peak of −25dB at 2.4 GHz, corresponding to an ϵr of 2.2, in agreement with experimental results.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129024602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580527
Avinash Kothuru, C. Rao, S. Goel
In recent year, Graphene has witnessed an increasing demand in diversified domains including in realizing various electronic devices due to its unique electrical and mechanical properties. In place of the conventional cumbersome approaches, recently CO2 laser induced graphene (LIG) on various substrates, like polymers, paper, cloth, have become a reliable alternative to fabricate such devices. Even though, development of LIG zones on diverse substrate and their optimization and implementation has been reported, a process to manifest single-step, cost-effective and scalabel LIG based flexible electronic devices remains a challenge. Herein, a novel process has been demonstrated for fabricating LIG based flexible electronic device on paper and cloth using a low-power blue laser. First, a porous filter paper and a cotton cloth were soaked in liquid polyimide and phenolic resin-polyvinyl alcohol (PR-PVA) respectively. Subsequently, a 3D printer, loaded with a 2.8 W blue laser diode, was appropriately ablated to form paper-based LIG (P-LIG) and cloth-based LIG (C-LIG), with desired designs and conductivity values. P-LIG and C-LIG zones provide optimum conductivity values of 198.54 S/m and 22.23 S/m respectively. Finally, P-LIG and C-LIG were integrated with the capacitive touch sensor and microcontroller modules, and display, to employ both the devices as flexible touch sensors.
{"title":"Flexible Touch Pad on Paper and Cloth by Blue Diode Ablated Laser Induced Graphene","authors":"Avinash Kothuru, C. Rao, S. Goel","doi":"10.1109/IFETC49530.2021.9580527","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580527","url":null,"abstract":"In recent year, Graphene has witnessed an increasing demand in diversified domains including in realizing various electronic devices due to its unique electrical and mechanical properties. In place of the conventional cumbersome approaches, recently CO2 laser induced graphene (LIG) on various substrates, like polymers, paper, cloth, have become a reliable alternative to fabricate such devices. Even though, development of LIG zones on diverse substrate and their optimization and implementation has been reported, a process to manifest single-step, cost-effective and scalabel LIG based flexible electronic devices remains a challenge. Herein, a novel process has been demonstrated for fabricating LIG based flexible electronic device on paper and cloth using a low-power blue laser. First, a porous filter paper and a cotton cloth were soaked in liquid polyimide and phenolic resin-polyvinyl alcohol (PR-PVA) respectively. Subsequently, a 3D printer, loaded with a 2.8 W blue laser diode, was appropriately ablated to form paper-based LIG (P-LIG) and cloth-based LIG (C-LIG), with desired designs and conductivity values. P-LIG and C-LIG zones provide optimum conductivity values of 198.54 S/m and 22.23 S/m respectively. Finally, P-LIG and C-LIG were integrated with the capacitive touch sensor and microcontroller modules, and display, to employ both the devices as flexible touch sensors.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114454506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580506
Sagar R. Bhalerao, D. Lupo, Paul R. Berger
Solution-processed metal oxide semiconductors are being extensively studied as a channel material for active semiconductor transistors. Among all metal oxide semiconductors, indium-gallium-zinc-oxide (IGZO) gained considerable attention for thin film transistors (TFTs) due to its promising electrical properties. Although metal oxide TFTs fabricated with vacuum deposition techniques enjoy the advantage of higher mobility in comparison with solution processing. However, vacuum deposition techniques are very costly due to expensive equipment, restricting its usage for emerging modern technologies, such as printed and flexible electronics. On the other hand, solution-processed metal oxide devices have an added advantage, such as low cost, compatibility with flexible substrates. Therefore, developments of solution processed metal oxide TFTs on flexible substrates could open a new era of flexible and wearable electronics. Herein, we report the fabrication of flexible thin film transistors (TFT) and inverter circuit using solution-processed indium-gallium-zinc-oxide as a channel material by uniting with room temperature deposited anodized high-K aluminium oxide (Al2O3) for gate dielectrics. The flexible TFTs operates at low voltage Vds of 4 V, with threshold voltage Vth 1.05 V along with hysteresis as low as 0.4 V. The extracted electron mobility (µ) at saturation regime, is 4.77 cm2/V.s. The transconductance, gm, is 90.8µS, subthreshold swing (SS) 357 mV/dec and on/off ratio 105.
{"title":"Flexible Thin Film Transistor (TFT) and Circuits for Internet of Things (IoT) based on Solution Processed Indium Gallium Zinc Oxide (IGZO)","authors":"Sagar R. Bhalerao, D. Lupo, Paul R. Berger","doi":"10.1109/IFETC49530.2021.9580506","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580506","url":null,"abstract":"Solution-processed metal oxide semiconductors are being extensively studied as a channel material for active semiconductor transistors. Among all metal oxide semiconductors, indium-gallium-zinc-oxide (IGZO) gained considerable attention for thin film transistors (TFTs) due to its promising electrical properties. Although metal oxide TFTs fabricated with vacuum deposition techniques enjoy the advantage of higher mobility in comparison with solution processing. However, vacuum deposition techniques are very costly due to expensive equipment, restricting its usage for emerging modern technologies, such as printed and flexible electronics. On the other hand, solution-processed metal oxide devices have an added advantage, such as low cost, compatibility with flexible substrates. Therefore, developments of solution processed metal oxide TFTs on flexible substrates could open a new era of flexible and wearable electronics. Herein, we report the fabrication of flexible thin film transistors (TFT) and inverter circuit using solution-processed indium-gallium-zinc-oxide as a channel material by uniting with room temperature deposited anodized high-K aluminium oxide (Al2O3) for gate dielectrics. The flexible TFTs operates at low voltage Vds of 4 V, with threshold voltage Vth 1.05 V along with hysteresis as low as 0.4 V. The extracted electron mobility (µ) at saturation regime, is 4.77 cm2/V.s. The transconductance, gm, is 90.8µS, subthreshold swing (SS) 357 mV/dec and on/off ratio 105.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122492959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580518
K. Thorley, M. Benford, Yang Song, S. Parkin, C. Risko, J. Anthony
Silyl ethynyl groups have become commonplace in functionalizing organic semiconductors, where they improve solubility and stability. The identity of the side chain also dictates the molecular organization in the solid state, and thus heavily influence bulk material properties such as charge mobility. Germanium-containing side chains show the same propensity to form favorable solid state packing motifs, but carbon analogs remain mostly unexplored. Here we present a general synthesis of carbon alkynes, changes in molecular properties of acenes functionalised with these alkynes, and a rich variety in crystal packing motifs that have rarely been observed with silicon or germanium side chains.
{"title":"Group 14 effects in alkynyl acene small molecule semiconductors","authors":"K. Thorley, M. Benford, Yang Song, S. Parkin, C. Risko, J. Anthony","doi":"10.1109/IFETC49530.2021.9580518","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580518","url":null,"abstract":"Silyl ethynyl groups have become commonplace in functionalizing organic semiconductors, where they improve solubility and stability. The identity of the side chain also dictates the molecular organization in the solid state, and thus heavily influence bulk material properties such as charge mobility. Germanium-containing side chains show the same propensity to form favorable solid state packing motifs, but carbon analogs remain mostly unexplored. Here we present a general synthesis of carbon alkynes, changes in molecular properties of acenes functionalised with these alkynes, and a rich variety in crystal packing motifs that have rarely been observed with silicon or germanium side chains.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131511343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580517
D. Bhatt, Shivam Nigam, S. Panda
Hafnium oxide films have elicited interest in the field-effect transistors because of the high dielectric constant, high band gap and the good interface with oxide semiconductors. In this work, sputtered deposition and post-annealing of hafnium oxide films were studied for reduction of defects at the surface of gate dielectric. AFM and FTIR characterization of the films were conducted. A Metal-Insulator-Metal device was demonstrated for the identification of the capacitance of gate dielectric. The effect of the material properties on the performance of field -effect transistors were investigated.
{"title":"Study of low temperature processing of HfO2 thin films deposited by rf magnetron sputtering for flexible thin film transistors","authors":"D. Bhatt, Shivam Nigam, S. Panda","doi":"10.1109/IFETC49530.2021.9580517","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580517","url":null,"abstract":"Hafnium oxide films have elicited interest in the field-effect transistors because of the high dielectric constant, high band gap and the good interface with oxide semiconductors. In this work, sputtered deposition and post-annealing of hafnium oxide films were studied for reduction of defects at the surface of gate dielectric. AFM and FTIR characterization of the films were conducted. A Metal-Insulator-Metal device was demonstrated for the identification of the capacitance of gate dielectric. The effect of the material properties on the performance of field -effect transistors were investigated.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"334-335 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130930625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-08DOI: 10.1109/IFETC49530.2021.9580516
Akanksha Rohit, T. F. Canan, S. Kaya
We present a comparative study on flexible capacitive sensors using three different mechanisms for vital sign monitoring. To record arterial pulse and respiration rate, sensors with a parallel-plate structure and engineered dielectrics with piezoelectric (BTO, PVDF - TrFE) fillers, polyurethane foam or triboelectric frictional layers are explored in this work. The sensitivity of the sensors with alternative mechanisms are compared by placing them on different locations on the body (wrist, neck and suprasternal notch). It is found that PU foam-based sensor is most sensitive option in terms of location and spectral content. Collectively, these sensors can be used in a multimodal patch developed for monitoring respiratory health as well as other abnormalities via sensor fusion.
{"title":"Vital Sign Monitoring via Flexible Capacitive Sensors: A Comparative Study","authors":"Akanksha Rohit, T. F. Canan, S. Kaya","doi":"10.1109/IFETC49530.2021.9580516","DOIUrl":"https://doi.org/10.1109/IFETC49530.2021.9580516","url":null,"abstract":"We present a comparative study on flexible capacitive sensors using three different mechanisms for vital sign monitoring. To record arterial pulse and respiration rate, sensors with a parallel-plate structure and engineered dielectrics with piezoelectric (BTO, PVDF - TrFE) fillers, polyurethane foam or triboelectric frictional layers are explored in this work. The sensitivity of the sensors with alternative mechanisms are compared by placing them on different locations on the body (wrist, neck and suprasternal notch). It is found that PU foam-based sensor is most sensitive option in terms of location and spectral content. Collectively, these sensors can be used in a multimodal patch developed for monitoring respiratory health as well as other abnormalities via sensor fusion.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134478372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：