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III-Nitride Electronic Devices最新文献

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Electronic properties of III-nitride materials and basics of III-nitride FETs iii -氮化物材料的电子特性及iii -氮化物场效应管的基础
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.013
P. Asbeck
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引用次数: 3
III-Nitride ultra-wide-bandgap electronic devices iii .氮化物超宽带隙电子器件
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.005
R. Kaplar, A. Allerman, A. Armstrong, A. Baca, M. Crawford, J. Dickerson, E. Douglas, A. Fischer, B. Klein, Shahed Reza
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引用次数: 3
Emerging materials, processing and device concepts 新兴材料，加工和器件概念
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.011
D. Meyer, D. Katzer, M. Hardy, N. Nepal, B. Downey
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引用次数: 0
Index 指数
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/s0080-8784(19)30081-x
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引用次数: 0
Physics-based III-Nitride device modeling 基于物理的iii -氮化物器件建模
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.002
U. Radhakrishna
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引用次数: 4
III-Nitride p-channel transistors 氮化p沟道晶体管
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.006
A. Nakajima
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引用次数: 0
Copyright 版权
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/s0080-8784(19)30077-8
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引用次数: 0
Series Page 系列页面
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/s0080-8784(19)30075-4
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引用次数: 0
III-Nitride millimeter wave transistors 氮化毫米波晶体管
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.010
K. Shinohara
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引用次数: 4
III-Nitride lateral transistor power switch 氮化横向晶体管电源开关
III-Nitride Electronic Devices
Pub Date : 2019-01-01 DOI: 10.1016/bs.semsem.2019.08.007
Sang-Woo Han, R. Chu
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引用次数: 1
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