Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00002.6
S. G. Khambholja, B. Y. Thakore, A. R. Jani
{"title":"Structural study of FeC: A first principles approach","authors":"S. G. Khambholja, B. Y. Thakore, A. R. Jani","doi":"10.5958/2454-762X.2017.00002.6","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00002.6","url":null,"abstract":"","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"29 1","pages":"15"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87267549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00034.8
Santosh Kumar, Madhu Shah, Arjun Singh
Along with the introduction of Internet of Things (IoT), the design of image processing systems is reachable distantly by applications over the internet is the basic need of today's life. These systems are intended for important data applications must possess an original structural design for image filtering and processing. In this paper, we present an image processing system that is easily reached over the internet and is implemented using a Raspberry-Pi and FPGA interface. The realization of this system was completed by means of a low cost ZedBoard Zynq 7000 FPGA and a Raspberry-pi. Chip utilization has been noted.
{"title":"FPGA – Raspberry pi Interface for low cost IoT based image processing","authors":"Santosh Kumar, Madhu Shah, Arjun Singh","doi":"10.5958/2454-762X.2017.00034.8","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00034.8","url":null,"abstract":"Along with the introduction of Internet of Things (IoT), the design of image processing systems is reachable distantly by applications over the internet is the basic need of today's life. These systems are intended for important data applications must possess an original structural design for image filtering and processing. In this paper, we present an image processing system that is easily reached over the internet and is implemented using a Raspberry-Pi and FPGA interface. The realization of this system was completed by means of a low cost ZedBoard Zynq 7000 FPGA and a Raspberry-pi. Chip utilization has been noted.","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"13 1","pages":"219-223"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83779864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00015.4
Mitesh B. Solanki, J. Joshi, P. M. Vyas, M. Joshi, B. Parekh
{"title":"Structural, FTIR and Dielectric Study of Lithium Doped KDP Crystals","authors":"Mitesh B. Solanki, J. Joshi, P. M. Vyas, M. Joshi, B. Parekh","doi":"10.5958/2454-762X.2017.00015.4","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00015.4","url":null,"abstract":"","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"1992 1","pages":"98"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89027766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00007.5
N. Agrawal, M. Sarkar
{"title":"Hyperfine interaction study of Te doped FexSb1-x alloy","authors":"N. Agrawal, M. Sarkar","doi":"10.5958/2454-762X.2017.00007.5","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00007.5","url":null,"abstract":"","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"245 1","pages":"46"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77526183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00011.7
Meghavi.D Parmar, A. Shrivastava, H. Patel
{"title":"Fabrication methods for lithium based ceramic material development-A Review","authors":"Meghavi.D Parmar, A. Shrivastava, H. Patel","doi":"10.5958/2454-762X.2017.00011.7","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00011.7","url":null,"abstract":"","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"89 1","pages":"73"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84477810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00031.2
C. Gupta, N. Malhotra
In the advancing era of technology the need of fast, reliable and affordable data communication links are the threads weaving this huge world wide web. The biggest challenge for communication engineers is to handle a bulky traffic effectively so that the result is low cost communication. Till the second generation evolution of communication system the network was mostly RF based but with the evolution towards 3G the use of optical spectrum was also inherited. But, the after 3G technologies i.e. 4G onwards the communication network has adopted the optical networks along with the existing RF network to deliver fast and economical communication services with the efficient use of RoF (Radio over Fiber) systems. Through this paper we have studied the performance evaluation of as RoF (Radio of Fiber) system if we used WCDMA-RF signals to be sent over an optical fiber using a TSSB SCM technique. The results obtained shows the effects of various types of interferences on ENR (Energy per bit calculated under the effect of total interference to noise ratio) of the dedicated channel for traffic transmission in WCDMA-RoF systems.
{"title":"Evalution of a RoF system using TSSB based SCM for multiplexing WCDMA based RF channels","authors":"C. Gupta, N. Malhotra","doi":"10.5958/2454-762X.2017.00031.2","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00031.2","url":null,"abstract":"In the advancing era of technology the need of fast, reliable and affordable data communication links are the threads weaving this huge world wide web. The biggest challenge for communication engineers is to handle a bulky traffic effectively so that the result is low cost communication. Till the second generation evolution of communication system the network was mostly RF based but with the evolution towards 3G the use of optical spectrum was also inherited. But, the after 3G technologies i.e. 4G onwards the communication network has adopted the optical networks along with the existing RF network to deliver fast and economical communication services with the efficient use of RoF (Radio over Fiber) systems. Through this paper we have studied the performance evaluation of as RoF (Radio of Fiber) system if we used WCDMA-RF signals to be sent over an optical fiber using a TSSB SCM technique. The results obtained shows the effects of various types of interferences on ENR (Energy per bit calculated under the effect of total interference to noise ratio) of the dedicated channel for traffic transmission in WCDMA-RoF systems.","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"12 1","pages":"191-195"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72835544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00029.4
M. Mallick, J. Das
{"title":"Graphene oxide based ethylene gas sensor for e-nose application","authors":"M. Mallick, J. Das","doi":"10.5958/2454-762X.2017.00029.4","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00029.4","url":null,"abstract":"","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"1 1","pages":"178"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76626655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01DOI: 10.5958/2454-762X.2017.00025.7
M. R. Shijeesh, M. Jayaraj
The n-channel field-effect thin-film transistors (TFTs) with amorphous zinc tin oxide as an active layer has been investigated. The transparent ZTO thin films deposited at room temperature using rf magnetron sputtering have an optical bandgap of 3.3 eV. Before the fabrication of TFT postdeposition annealing of the film was carried out 300°C for 1 hour. The channel layer on Si/SiO2 substrate was deposited in two different structures, isolating each device from the neighboring devices and without isolation. The isolation of active material improves TFT performance by reducing the gate leakage current and parasitic bias stress. The on-off ratio and subthreshold swing were significantly changed from 2.3x103 and 0.73 V/dec to 2.55x106 and 0.23 V/dec respectively on isolation. The effect of channel width on the TFT parameters such as saturated mobility, subthreshold swing and threshold voltage are also studied. The threshold voltage decreases with increasing channel width but mobility and subthreshold swing are relatively constant. The threshold voltage decreased from 19 V to 11 V when the channel width increased. It may be due to the increasing parasitic resistance between the source/drain contacts and the ZTO channel layer.
{"title":"Zinc tin oxide thin film transistor: Effect on channel isolation and channel width","authors":"M. R. Shijeesh, M. Jayaraj","doi":"10.5958/2454-762X.2017.00025.7","DOIUrl":"https://doi.org/10.5958/2454-762X.2017.00025.7","url":null,"abstract":"The n-channel field-effect thin-film transistors (TFTs) with amorphous zinc tin oxide as an active layer has been investigated. The transparent ZTO thin films deposited at room temperature using rf magnetron sputtering have an optical bandgap of 3.3 eV. Before the fabrication of TFT postdeposition annealing of the film was carried out 300°C for 1 hour. The channel layer on Si/SiO2 substrate was deposited in two different structures, isolating each device from the neighboring devices and without isolation. The isolation of active material improves TFT performance by reducing the gate leakage current and parasitic bias stress. The on-off ratio and subthreshold swing were significantly changed from 2.3x103 and 0.73 V/dec to 2.55x106 and 0.23 V/dec respectively on isolation. The effect of channel width on the TFT parameters such as saturated mobility, subthreshold swing and threshold voltage are also studied. The threshold voltage decreases with increasing channel width but mobility and subthreshold swing are relatively constant. The threshold voltage decreased from 19 V to 11 V when the channel width increased. It may be due to the increasing parasitic resistance between the source/drain contacts and the ZTO channel layer.","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"114 1","pages":"155-160"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79888463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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