Pub Date : 1988-12-31DOI: 10.1515/9783112485606-020
E. Pollert, J. Hejtminek, K. Jurek, J. Kamarád, A. Tříska, D. Zemanová
{"title":"Effect of the Pressing on the Properties of the Superconducting YBa2Cu3O7-x Phase","authors":"E. Pollert, J. Hejtminek, K. Jurek, J. Kamarád, A. Tříska, D. Zemanová","doi":"10.1515/9783112485606-020","DOIUrl":"https://doi.org/10.1515/9783112485606-020","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76355106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-12-31DOI: 10.1515/9783112485606-005
U. Braun, J. Sieleb, R. Richter, I. Leban, L. Goliö
{"title":"Crystal and Molecular Structure of N-(Diethylaminothiocarbonyl)-N'-phenyl-benzamidine","authors":"U. Braun, J. Sieleb, R. Richter, I. Leban, L. Goliö","doi":"10.1515/9783112485606-005","DOIUrl":"https://doi.org/10.1515/9783112485606-005","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77050871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Based on a Monte Carlo calculation procedure a phenomenological description is developed of the diffusion process of excess minority charge carriers inside a semiconducting target. Using this description and an analytic expression of the generation volume of electron-hole pairs in Si the electron beam induced current (EBIC) obtained by applying a scanning electron microscope can be simulated under consideration of relatively complicated structures of junction semiconductor devices. This allows a better interpretation of EBIC profiles as to the information about the geometric structure of space charge regions built up in junction semiconductor devices. As an example of such an interpretation the verification of the method of Chi and Gatos is presented. Auf der Grundlage der Monte-Carlo-Methode wird eine phanomenologische Beschreibung des Diffusionsprozesses der Uberschus-Minoritatsladungstrager im Halbleitertarget entwickelt. Unter Anwendung dieser Beschreibung und einer analytischen Beziehung fur das Generationsvolumen von Elektronen-Loch-Paaren im Si kann der im Rasterelektronenmikroskop erzeugte EBIC (electron beam induced current) unter Berucksichtigung relativ komplizierter Dotierungsstrukturen im Halbleiter simuliert werden. Dies erlaubt eine fundierte Interpretation von EBIC-Profilen hinsichtlich der Informationen uber die geometrische Struktur der von den Dotierungsstrukturen aufgebauten Raumladungszonen. Die Verifizierung der Methode von Chi und Gatos wird als Beispiel einer solchen Interpretation vorgestellt.
{"title":"Simulation of the Carrier Diffusion Process for the Interpretation of EBIC Profiles","authors":"U. Werner, J. Heydenreich","doi":"10.1002/CRAT.2170230112","DOIUrl":"https://doi.org/10.1002/CRAT.2170230112","url":null,"abstract":"Based on a Monte Carlo calculation procedure a phenomenological description is developed of the diffusion process of excess minority charge carriers inside a semiconducting target. Using this description and an analytic expression of the generation volume of electron-hole pairs in Si the electron beam induced current (EBIC) obtained by applying a scanning electron microscope can be simulated under consideration of relatively complicated structures of junction semiconductor devices. This allows a better interpretation of EBIC profiles as to the information about the geometric structure of space charge regions built up in junction semiconductor devices. As an example of such an interpretation the verification of the method of Chi and Gatos is presented. \u0000 \u0000 \u0000 \u0000Auf der Grundlage der Monte-Carlo-Methode wird eine phanomenologische Beschreibung des Diffusionsprozesses der Uberschus-Minoritatsladungstrager im Halbleitertarget entwickelt. Unter Anwendung dieser Beschreibung und einer analytischen Beziehung fur das Generationsvolumen von Elektronen-Loch-Paaren im Si kann der im Rasterelektronenmikroskop erzeugte EBIC (electron beam induced current) unter Berucksichtigung relativ komplizierter Dotierungsstrukturen im Halbleiter simuliert werden. Dies erlaubt eine fundierte Interpretation von EBIC-Profilen hinsichtlich der Informationen uber die geometrische Struktur der von den Dotierungsstrukturen aufgebauten Raumladungszonen. Die Verifizierung der Methode von Chi und Gatos wird als Beispiel einer solchen Interpretation vorgestellt.","PeriodicalId":14710,"journal":{"name":"January","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87350694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-12-31DOI: 10.1515/9783112485606-013
E. Nowak, H. Neumann, M. S. Omar
{"title":"Heat Capacity of Ag8Ge10P12 from 180 to 550 K","authors":"E. Nowak, H. Neumann, M. S. Omar","doi":"10.1515/9783112485606-013","DOIUrl":"https://doi.org/10.1515/9783112485606-013","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74269042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：