{"title":"Optical Properties of Some Quaternary Copper Chalcopyrites","authors":"D. K. Ghosh, L. K. Samanta, G. Bhar","doi":"10.1002/CRAT.2170230123","DOIUrl":"https://doi.org/10.1002/CRAT.2170230123","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82195603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The structures of CdP2 are described as stacking sequences of layers of CdP4 tetrahedra. On the basis of the OD theory of Dornberger-Schiff, the stacking possibilities are derived and convenient stacking notations proposed. The idealized layer structure is given, the percentage of α-CdP2 for any stacking sequence defined. The symbol of the OD groupoid family is P11(n)2m · (4) x, y with parameters x = y = 1/2 and (4+), (4−) as the two alternative transformations from layer to layer. The net constants are a = b ≈ 5.29 A; the “thickness” of a layer is c0 ≈ 4.95 A. Die Strukturen von CdP2 werden als Stapelfolgen von Schichten von CdP4-Tetraedern beschrieben. Auf der Grundlage der OD-Theorie von Dornberger-Schiff werden die Stapelmoglichkeiten abgeleitet und zweckmasige Polytypensymbole vorgeschlagen. Die idealisierte Schichtstruktur wird angegeben und der Prozentsatz von α-CdP2 in einer beliebigen Stapelfolge definiert. Das Symbol fur die OD-Gruppoid-Familie ist P11(n) 2m · (4) x, y mit Parametern x = y = 1/2 und (4+), (4−) als den zwei moglichen Transformationen von Schicht zu Schicht. Die Netzkonstanten sind a = b ≈ 5.29 A, die „Schichtdicke” ist c0 ≈ 4.95 A.
产品结构就像副设计师给病人所设的陷阱。在船和炮弹轰炸的基础上《idealized layer的给予,The percentage ofα-CdP2 for任意stacking sequence defined .《The象征“groupoid伊斯兰家庭P11 2m (n)·(x, y和余数有(x = y =半and(4 +)(4−)as The二号替代transformations从layer到layer .网constants a = b里收录≈5.29 a;the " thickness of a layer is c0≈4.95 a .有一个较大的结构叫做CdP2。在dds(多柏格船)理论的基础上，摩尔门托式文字已经生成，并提出了重要的多元格式。完美的Schichtstruktur指定和比例由α-CdP2中任何Stapelfolge定义.为了OD-Gruppoid-Familie仪式的是符号P11 2m (n)·(4)x, y和x = y =半参数(4 +)(4−)moglichen变革带来的两个层的薄膜.这些Netzkonstanten a = b≈5.29 a Schichtdicke”是c0≈4.95 a .
{"title":"OD Approach to the Polytypism in CdP2","authors":"K. Fichtner","doi":"10.1002/CRAT.2170230108","DOIUrl":"https://doi.org/10.1002/CRAT.2170230108","url":null,"abstract":"The structures of CdP2 are described as stacking sequences of layers of CdP4 tetrahedra. On the basis of the OD theory of Dornberger-Schiff, the stacking possibilities are derived and convenient stacking notations proposed. The idealized layer structure is given, the percentage of α-CdP2 for any stacking sequence defined. The symbol of the OD groupoid family is P11(n)2m · (4) x, y with parameters x = y = 1/2 and (4+), (4−) as the two alternative transformations from layer to layer. The net constants are a = b ≈ 5.29 A; the “thickness” of a layer is c0 ≈ 4.95 A. \u0000 \u0000 \u0000 \u0000Die Strukturen von CdP2 werden als Stapelfolgen von Schichten von CdP4-Tetraedern beschrieben. Auf der Grundlage der OD-Theorie von Dornberger-Schiff werden die Stapelmoglichkeiten abgeleitet und zweckmasige Polytypensymbole vorgeschlagen. Die idealisierte Schichtstruktur wird angegeben und der Prozentsatz von α-CdP2 in einer beliebigen Stapelfolge definiert. Das Symbol fur die OD-Gruppoid-Familie ist P11(n) 2m · (4) x, y mit Parametern x = y = 1/2 und (4+), (4−) als den zwei moglichen Transformationen von Schicht zu Schicht. Die Netzkonstanten sind a = b ≈ 5.29 A, die „Schichtdicke” ist c0 ≈ 4.95 A.","PeriodicalId":14710,"journal":{"name":"January","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73668473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Growth of NaX Zeolites in the Presence of Triethanolamine (TEA)","authors":"W. Schmitz, J. Kornatowski, G. Finger","doi":"10.1002/CRAT.2170230125","DOIUrl":"https://doi.org/10.1002/CRAT.2170230125","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73974916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Schenk, H. Berger, A. Klimakow, M. Mühlberg, M. Wienecke
The nostoichiometry and point-defect structure of PbTe was investigated by various methods including carrier-concentration, lattice-constant, positron-annihilation and vapour-density measurements. The results are discussed in comparison with data published by other authors. New aspects are obtained especially from high-temperature experiments. A model of nonstoichiometry and defect structure in PbTe is proposed. The stability region of PbTe is essentially broader than reported until now. The disorder takes place mainly in the Pb sublattice, i.e., there occur charged Pb vacancies (Te-rich) and Pb interstitials (Pb-rich), respectively, as well as probably additional neutral Pb interstitials in Pb-rich PbTe. Die Nichtstochiometrie und Punktdefektstruktur von PbTe wurde mit verschiedenen Methoden untersucht, u. a. durch Messungen der Ladungstragerkonzentration, der Gitterkonstante, der Positronenannihilation sowie der Dampfdichte. Die Ergebnisse werden mit denen anderer Autoren verglichen. Neue Aspekte ergeben sich insbesondere aus Hochtemperaturmessungen. Ein Modell der Nichtstochiometrie und der Defektstruktur in PbTe wird vorgeschlagen. Das Stabilitatsgebiet von PbTe ist wesentlich breiter als bisher berichtet. Die Fehlordnung tritt hauptsachlich im Pb-Untergitter auf, d. h., es existieren geladene Pb-Leerstellen (Te-reich) bzw. Pb-Zwischengitterionen (Pb-reich) sowie zusatzlich wahrscheinlich neutrale Pb-Zwischengitteratome in Pb-reichem PbTe.
采用载流子浓度、晶格常数、正电子湮灭和蒸汽密度测量等方法研究了PbTe的化学计量学和点缺陷结构。结果与其他作者发表的数据进行了比较。特别是从高温实验中得到了新的认识。提出了PbTe的非化学计量和缺陷结构模型。PbTe的稳定区比目前报道的要宽。这种紊乱主要发生在Pb亚晶格中，即在富te的PbTe中分别存在带电Pb空位(富te)和Pb间隙(富Pb)，在富Pb的PbTe中可能还存在额外的中性Pb间隙。[2] [1] [2] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [4]Die Ergebnisse werden mit denen anderder Autoren verglichen。新aspete的翻译结果:新aspete的翻译结果:在夜间化学计量学模型和在PbTe风场结构下。《稳定论》第1章第2节:Die Fehlordnung tritt hauptsachlich im Pb-Untergitter auf, d. h.， es existeren geladene Pb-Leerstellen (Te-reich) bzw。Pb-Zwischengitterionen (Pb-reich) sowie zusatzlich wahrscheinlich中性pb - zwischengitter原子在Pb-reichem PbTe。
{"title":"Nonstoichiometry and Point Defects in PbTe","authors":"M. Schenk, H. Berger, A. Klimakow, M. Mühlberg, M. Wienecke","doi":"10.1002/CRAT.2170230111","DOIUrl":"https://doi.org/10.1002/CRAT.2170230111","url":null,"abstract":"The nostoichiometry and point-defect structure of PbTe was investigated by various methods including carrier-concentration, lattice-constant, positron-annihilation and vapour-density measurements. The results are discussed in comparison with data published by other authors. New aspects are obtained especially from high-temperature experiments. A model of nonstoichiometry and defect structure in PbTe is proposed. The stability region of PbTe is essentially broader than reported until now. The disorder takes place mainly in the Pb sublattice, i.e., there occur charged Pb vacancies (Te-rich) and Pb interstitials (Pb-rich), respectively, as well as probably additional neutral Pb interstitials in Pb-rich PbTe. \u0000 \u0000 \u0000 \u0000Die Nichtstochiometrie und Punktdefektstruktur von PbTe wurde mit verschiedenen Methoden untersucht, u. a. durch Messungen der Ladungstragerkonzentration, der Gitterkonstante, der Positronenannihilation sowie der Dampfdichte. Die Ergebnisse werden mit denen anderer Autoren verglichen. Neue Aspekte ergeben sich insbesondere aus Hochtemperaturmessungen. Ein Modell der Nichtstochiometrie und der Defektstruktur in PbTe wird vorgeschlagen. Das Stabilitatsgebiet von PbTe ist wesentlich breiter als bisher berichtet. Die Fehlordnung tritt hauptsachlich im Pb-Untergitter auf, d. h., es existieren geladene Pb-Leerstellen (Te-reich) bzw. Pb-Zwischengitterionen (Pb-reich) sowie zusatzlich wahrscheinlich neutrale Pb-Zwischengitteratome in Pb-reichem PbTe.","PeriodicalId":14710,"journal":{"name":"January","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83846662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-12-31DOI: 10.1515/9783112485606-004
H. Görls, B. Schulz, U. Rosenthal, W. Schulz
{"title":"Crystal and Molecular Structure of (2-3-n-2-Butyne-l,4-diol)-bis-(triphenylphosphan)- nickel(O) Ni{[(C6H5)3P]2 (C4H6O2)}","authors":"H. Görls, B. Schulz, U. Rosenthal, W. Schulz","doi":"10.1515/9783112485606-004","DOIUrl":"https://doi.org/10.1515/9783112485606-004","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"176 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82983595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-12-31DOI: 10.1515/9783112485606-002
B. Schumann, A. Tempel, G. Kühn
{"title":"Epitaxy of AIBIIICVI\u0000 2 Semiconductors","authors":"B. Schumann, A. Tempel, G. Kühn","doi":"10.1515/9783112485606-002","DOIUrl":"https://doi.org/10.1515/9783112485606-002","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91071388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A solution is presented suitable for revealing lattice defects on (111) phosphorous faces of GaP and InP. It is possible to distinguish between pits originated by grown-in dislocations and microdefects such as perfect loops, faulted loops and precipitates and/or inclusions. Moreover it is also possible to reveal large stacking faults of Shockley type and microtwin lamellae. One to one correlations have been given by means of transmission electron microscopy. Es wird eine neue Losung vorgestellt, die auf (111) Flachen von GaP und InP Gitterdefekte anazt. Es ist moglich zwischen Versetzungen und Mikrodefekten wie vollstandigen Versetzungsringen, unvollstandigen Versetzungsringen sowie Ausscheidungen und/oder Einschlussen zu unterscheiden. Neben ausgedehnten Stapelfehlern vom Shockley-Typ werden auch Mikrozwillingslamellen und Korngrenzen angeatzt. Eine exakte Korrelation der verschiedenen Atzerscheinungen mit den entsprechenden Gitterdefekten erfolgte mittels Transmissionselektronenmikroskopie.
{"title":"Revealing of Lattice Defects on (111) Faces of Gallium Phosphide and Indium Phosphide by Chemical Etching","authors":"G. Wagner, V. Gottschalch","doi":"10.1002/CRAT.2170230109","DOIUrl":"https://doi.org/10.1002/CRAT.2170230109","url":null,"abstract":"A solution is presented suitable for revealing lattice defects on (111) phosphorous faces of GaP and InP. It is possible to distinguish between pits originated by grown-in dislocations and microdefects such as perfect loops, faulted loops and precipitates and/or inclusions. Moreover it is also possible to reveal large stacking faults of Shockley type and microtwin lamellae. One to one correlations have been given by means of transmission electron microscopy. \u0000 \u0000 \u0000 \u0000Es wird eine neue Losung vorgestellt, die auf (111) Flachen von GaP und InP Gitterdefekte anazt. Es ist moglich zwischen Versetzungen und Mikrodefekten wie vollstandigen Versetzungsringen, unvollstandigen Versetzungsringen sowie Ausscheidungen und/oder Einschlussen zu unterscheiden. Neben ausgedehnten Stapelfehlern vom Shockley-Typ werden auch Mikrozwillingslamellen und Korngrenzen angeatzt. Eine exakte Korrelation der verschiedenen Atzerscheinungen mit den entsprechenden Gitterdefekten erfolgte mittels Transmissionselektronenmikroskopie.","PeriodicalId":14710,"journal":{"name":"January","volume":"38 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86957050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Pramatarova, E. Savova, G. Minchev, M. Mihailov
{"title":"Preparation of GaAs Substrates for MBE","authors":"L. Pramatarova, E. Savova, G. Minchev, M. Mihailov","doi":"10.1002/CRAT.2170230122","DOIUrl":"https://doi.org/10.1002/CRAT.2170230122","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86030980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-12-31DOI: 10.1515/9783112485606-015
W. Schmitz, P. Schreiter
{"title":"X-ray Determination of Solid Solution Composition in the Melilite System Äkermanite (AK) — Gehlenite (Ge) - Soda Melilite (Sm)","authors":"W. Schmitz, P. Schreiter","doi":"10.1515/9783112485606-015","DOIUrl":"https://doi.org/10.1515/9783112485606-015","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81476013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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