Mycorrhiza is ana structural and functional association between specific fungus and the roots of symbiotic relationship between mutualisme functions with a high degree of plant roots. Benefits of mycorrhiza for plant growth and development as its host is to increase the absorption of nutrient elements of soils, as biological barrier against infection of root pathogen, enhancing the resilience of crops to drought and increasing hormone boosters grows. This research aims to identify a arbuskular mycorrhiza fungi isolated from chilli plants rhizosphere in the village of Cilubang Mekar, Gunung Picung, Cikoneng, dan Kampung Baru. The results of this research show that the exploration and characterization of spores that develop on the roots of chilli in the village indicates a growing spores there is the genus Acaulopora, Gigaspora, andGlomus.type of Spore that successfully identified a species of Glomus sp 1, Glomus sp 2, Glomus sp 3.
菌根是一种在结构和功能上具有高度关联的特定真菌与根系之间的共生关系和共生功能的植物根系。菌根作为寄主对植物生长发育的好处是增加土壤对营养元素的吸收，作为抵御根系病原菌感染的生物屏障，增强作物的抗旱能力，促进激素的生长。本研究旨在鉴定从Cilubang Mekar, Gunung Picung, Cikoneng, dan Kampung Baru村辣椒植物根际分离的一种丛枝菌根真菌。本研究结果表明，对该村辣椒根部发育孢子的探索和鉴定表明，该村生长的孢子属为Acaulopora、Gigaspora和glomus。成功鉴定出Glomus sp1、Glomus sp2、Glomus sp3的孢子类型。
{"title":"EXPLORATION AND IDENTIFICATION OF ARBUSCULAR MYCORRHIZAL FUNGI FROM THE RHIZOSPHERE OF CHILI PLANTS (Capsicum Annuum L) IN BOGOR","authors":"M. -, A. Wulan, Agus Utami","doi":"10.33751/JSI.V1I02.1001","DOIUrl":"https://doi.org/10.33751/JSI.V1I02.1001","url":null,"abstract":"Mycorrhiza is ana structural and functional association between specific fungus and the roots of symbiotic relationship between mutualisme functions with a high degree of plant roots. Benefits of mycorrhiza for plant growth and development as its host is to increase the absorption of nutrient elements of soils, as biological barrier against infection of root pathogen, enhancing the resilience of crops to drought and increasing hormone boosters grows. This research aims to identify a arbuskular mycorrhiza fungi isolated from chilli plants rhizosphere in the village of Cilubang Mekar, Gunung Picung, Cikoneng, dan Kampung Baru. The results of this research show that the exploration and characterization of spores that develop on the roots of chilli in the village indicates a growing spores there is the genus Acaulopora, Gigaspora, andGlomus.type of Spore that successfully identified a species of Glomus sp 1, Glomus sp 2, Glomus sp 3.","PeriodicalId":165227,"journal":{"name":"Journal of Science Innovare","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115592536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
One of the studies that recently attracted the attention of physicists is research on ferroelectric material because this material is very promising for the development of new generation devices in connection with the unique properties it has. Ferroelectric materials, especially those based on a mixture of lithium tantalite (LiTaO3), are expected to be applied to the infrared sensor. Lithium tantalate (LiTaO3) is a ferroelectric material that is unique in terms of pyroelectric and piezoelectric properties that are integrated with good mechanical and chemical stability. Therefore LiTaO3 is often used for several applications such as electro-optical modulators and pyroelectric detectors. LiTaO3 is a non-hygroscopic crystal, colorless, soluble in water, has a high transmission rate and does not easily damage its optical properties. LiTaO3 is a material that has a high dielectric constant and a high load storage capacity. This research has succeeded in determining the band gap energy of the LiTaO3 film in the rubidium chamber obtained in the range of values 2.02-2.98 eV as shown in figure 4. The LiTaO3 film after the annealing process at a temperature of 650 oC, has the highest band gap energy of 2.98 eV. Large energy is needed on the electrons to be excited from the valence band to the conduction band. Whereas in the LiTaO3 film after an annealing process of 800 oC, the band gap energy obtained is 2.02 eV. This makes it easier for electrons to be excited from the valence band to the conduction band because the energy needed is not too large.
{"title":"LITAO3 CHARACTERIZATION OF RUBIDIUM ON TEMPERATURE VARIATIONS","authors":"Agus Ismangil, T. P. Negara","doi":"10.33751/jsi.v1i02.1005","DOIUrl":"https://doi.org/10.33751/jsi.v1i02.1005","url":null,"abstract":"One of the studies that recently attracted the attention of physicists is research on ferroelectric material because this material is very promising for the development of new generation devices in connection with the unique properties it has. Ferroelectric materials, especially those based on a mixture of lithium tantalite (LiTaO3), are expected to be applied to the infrared sensor. Lithium tantalate (LiTaO3) is a ferroelectric material that is unique in terms of pyroelectric and piezoelectric properties that are integrated with good mechanical and chemical stability. Therefore LiTaO3 is often used for several applications such as electro-optical modulators and pyroelectric detectors. LiTaO3 is a non-hygroscopic crystal, colorless, soluble in water, has a high transmission rate and does not easily damage its optical properties. LiTaO3 is a material that has a high dielectric constant and a high load storage capacity. This research has succeeded in determining the band gap energy of the LiTaO3 film in the rubidium chamber obtained in the range of values 2.02-2.98 eV as shown in figure 4. The LiTaO3 film after the annealing process at a temperature of 650 oC, has the highest band gap energy of 2.98 eV. Large energy is needed on the electrons to be excited from the valence band to the conduction band. Whereas in the LiTaO3 film after an annealing process of 800 oC, the band gap energy obtained is 2.02 eV. This makes it easier for electrons to be excited from the valence band to the conduction band because the energy needed is not too large.","PeriodicalId":165227,"journal":{"name":"Journal of Science Innovare","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130695249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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