Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286796
Fei Peng, Chengqun Gui, Yi Song, Yijiang Shen
As one of the most effective methods to compensate image distortion, inverse lithography technology (ILT) has been widely used in the computational lithography. However, the compensation capability of ILT to wafer image is restricted by the effect of low-pass filtering, and difficult to resolve high frequency signals. In this paper, a new optimization algorithm is investigated and applied to ILT. The high frequency points on the target pattern are characterized, and additional low frequency signals are added at these points to form an artificial desired pattern. The artificial desired pattern will replace the target pattern in the optimization, which is proposed to resolve the impact of high frequency signals. Simulation results demonstrate the superiority of the proposed method, which effectively improves the fidelity of the target pattern.
{"title":"Mask Optimization based on artificial desired pattern","authors":"Fei Peng, Chengqun Gui, Yi Song, Yijiang Shen","doi":"10.1109/IWAPS51164.2020.9286796","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286796","url":null,"abstract":"As one of the most effective methods to compensate image distortion, inverse lithography technology (ILT) has been widely used in the computational lithography. However, the compensation capability of ILT to wafer image is restricted by the effect of low-pass filtering, and difficult to resolve high frequency signals. In this paper, a new optimization algorithm is investigated and applied to ILT. The high frequency points on the target pattern are characterized, and additional low frequency signals are added at these points to form an artificial desired pattern. The artificial desired pattern will replace the target pattern in the optimization, which is proposed to resolve the impact of high frequency signals. Simulation results demonstrate the superiority of the proposed method, which effectively improves the fidelity of the target pattern.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121143462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286806
Yunsheng Xia, Rui Qin, Andy Lan, Joer Huang, Congcong Fan, Shaowen Qiu, Dong Xue, Dashuai Tao, Kun Gao, Haoran Li, Shu Lu, Hongpeng Su, Linfei Gao, Jinyan Song
As DRAM process nodes keep shrinking, the overlay budget becomes tighter, and overlay error showing a more significant effect on yield. This calls for a more accurate and more robust on-product overlay (OPO) measurement approach. In many cases, engineers tune their process to improve yield, especially in the research and development (R&D) phase of a product, but overlay measurability is sensitive to process variation and the measurement window could drift or even disappear after process changes. In the method described in this paper, we use features on the Archer™ imaging-based overlay (IBO) measurement system - such as illumination with tunable wavelength (wave tuner, WT) to optimize illumination wavelength, and dynamic focus mode (DFM) to select best focus position - to produce a more accurate and robust OPO measurement on critical layers in advanced DRAM. With WT, the overlay target has better illumination conditions, resulting in residual improvement of ~60%, and more stable measurements from wafer to wafer and lot to lot. DFM improves measurement accuracy with a more accurate focus position. For products both in R&D and high-volume manufacturing (HVM) phases, WT and DFM are demonstrated to be critical knobs to improve measurability as a function of wavelength and focus position. These features allow further information, such as accuracy heatmaps, residual landscape maps, and focus offset maps to help the user identify key process variations.
{"title":"OPO Measurement Improvement in Advanced DRAM with Tunable Wavelength Imaging","authors":"Yunsheng Xia, Rui Qin, Andy Lan, Joer Huang, Congcong Fan, Shaowen Qiu, Dong Xue, Dashuai Tao, Kun Gao, Haoran Li, Shu Lu, Hongpeng Su, Linfei Gao, Jinyan Song","doi":"10.1109/IWAPS51164.2020.9286806","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286806","url":null,"abstract":"As DRAM process nodes keep shrinking, the overlay budget becomes tighter, and overlay error showing a more significant effect on yield. This calls for a more accurate and more robust on-product overlay (OPO) measurement approach. In many cases, engineers tune their process to improve yield, especially in the research and development (R&D) phase of a product, but overlay measurability is sensitive to process variation and the measurement window could drift or even disappear after process changes. In the method described in this paper, we use features on the Archer™ imaging-based overlay (IBO) measurement system - such as illumination with tunable wavelength (wave tuner, WT) to optimize illumination wavelength, and dynamic focus mode (DFM) to select best focus position - to produce a more accurate and robust OPO measurement on critical layers in advanced DRAM. With WT, the overlay target has better illumination conditions, resulting in residual improvement of ~60%, and more stable measurements from wafer to wafer and lot to lot. DFM improves measurement accuracy with a more accurate focus position. For products both in R&D and high-volume manufacturing (HVM) phases, WT and DFM are demonstrated to be critical knobs to improve measurability as a function of wavelength and focus position. These features allow further information, such as accuracy heatmaps, residual landscape maps, and focus offset maps to help the user identify key process variations.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125011922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286795
Wei Yuan, Yifei Lu, Ming Li, Bingyang Pan, Ying Gao, Yu Tian, Zhi-qin Li, Liang Ji, Ying Huang, Hao Chen, Yueliang Yao, Sean Park
In a real mask tape-out (MTO) process, an end user would typically use simulation tools to capture hotspot candidates which are at risk of appearing on wafers. The tight turn-around-time(TAT) in a fab requires an efficient method to categorize these candidates and sampling before measurement. Traditionally, in order to capture hotspots, verification tools mainly focus on limited parameters such as contours, local image contrast and parameters extracted from the full aerial and resist information. This approach makes it difficult to quickly pinpoint high risk hotspots, especially when the hotspot count is large. In contrast, by using advanced machine learning techniques, Newron hotspot prediction is an innovative method that makes full use of whole simulated images to generate accurate prediction information for every hotspot candidate. Newron hotspot prediction is able to significantly reduce the amount of required input information and improve the hotspot capture rate.
{"title":"Machine Learning Hotspot Prediction Significantly Improve Capture Rate on Wafer","authors":"Wei Yuan, Yifei Lu, Ming Li, Bingyang Pan, Ying Gao, Yu Tian, Zhi-qin Li, Liang Ji, Ying Huang, Hao Chen, Yueliang Yao, Sean Park","doi":"10.1109/IWAPS51164.2020.9286795","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286795","url":null,"abstract":"In a real mask tape-out (MTO) process, an end user would typically use simulation tools to capture hotspot candidates which are at risk of appearing on wafers. The tight turn-around-time(TAT) in a fab requires an efficient method to categorize these candidates and sampling before measurement. Traditionally, in order to capture hotspots, verification tools mainly focus on limited parameters such as contours, local image contrast and parameters extracted from the full aerial and resist information. This approach makes it difficult to quickly pinpoint high risk hotspots, especially when the hotspot count is large. In contrast, by using advanced machine learning techniques, Newron hotspot prediction is an innovative method that makes full use of whole simulated images to generate accurate prediction information for every hotspot candidate. Newron hotspot prediction is able to significantly reduce the amount of required input information and improve the hotspot capture rate.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116370039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286799
Zengzhi Huang, Zhenguo Zheng, Shijie Chen, Junbo Feng, Weiran Huang, G. Cao
Silicon photonic has become an enabling technology in a variety of applications such as telecommunication, datacenter interconnect, LiDAR, optical sensing and quantum computing. However, many research groups or fabless companies lack the access to the manufacturing facilities of silicon photonics devices, which are compatible with the CMOS technology. Multi-project wafer (MPW) service will be an agreeable solution for them. Optical proximity correction (OPC) is essential in silicon photonics MPW platform. In this paper we introduce the preliminary OPC development efforts in CUMEC's 180 nm node silicon photonics MPW platform.
{"title":"Preliminary Round of OPC Development in 180nm node Silicon Photonics MPW platform","authors":"Zengzhi Huang, Zhenguo Zheng, Shijie Chen, Junbo Feng, Weiran Huang, G. Cao","doi":"10.1109/IWAPS51164.2020.9286799","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286799","url":null,"abstract":"Silicon photonic has become an enabling technology in a variety of applications such as telecommunication, datacenter interconnect, LiDAR, optical sensing and quantum computing. However, many research groups or fabless companies lack the access to the manufacturing facilities of silicon photonics devices, which are compatible with the CMOS technology. Multi-project wafer (MPW) service will be an agreeable solution for them. Optical proximity correction (OPC) is essential in silicon photonics MPW platform. In this paper we introduce the preliminary OPC development efforts in CUMEC's 180 nm node silicon photonics MPW platform.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131372783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With development of advanced lithography processes, simultaneous reduction of line width and edge roughness along with the shrinkage of critical dimension of main feature is a continuous challenge. Recent years, unbiased roughness characterization was introduced in pattern roughness analysis by applying power spectral density method. Through power spectral density analysis, the data of all measurement points from scanning electron microscope are processed by Fourier transform, and the roughness behaviors of inspected pattern are converted from spatial domain to frequency domain. Autocorrelation analysis is an effective means to identify the periodic behavior of line width or edge roughness. In our research, roughness of dense lines under different lithography conditions, including reflectivity of bottom anti-reflection coating materials, photoresist, illumination and post exposure bake temperature, was characterized using power spectral density, autocorrelation methods as well as with standard deviation.
{"title":"Pattern Roughness Analyses in Advanced Lithography: Power Spectral Density and Autocorrelation","authors":"Yuyang Bian, Xijun Guan, Biqiu Liu, Xiaobo Guo, Cong Zhang, Jun Huang, Yu Zhang","doi":"10.1109/IWAPS51164.2020.9286797","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286797","url":null,"abstract":"With development of advanced lithography processes, simultaneous reduction of line width and edge roughness along with the shrinkage of critical dimension of main feature is a continuous challenge. Recent years, unbiased roughness characterization was introduced in pattern roughness analysis by applying power spectral density method. Through power spectral density analysis, the data of all measurement points from scanning electron microscope are processed by Fourier transform, and the roughness behaviors of inspected pattern are converted from spatial domain to frequency domain. Autocorrelation analysis is an effective means to identify the periodic behavior of line width or edge roughness. In our research, roughness of dense lines under different lithography conditions, including reflectivity of bottom anti-reflection coating materials, photoresist, illumination and post exposure bake temperature, was characterized using power spectral density, autocorrelation methods as well as with standard deviation.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128931787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286801
Weimei Xie, Yanpeng Chen, Shirui Yu, Yu Zhang
As the critical dimension of mask shrinks, revolutionary mask making methods have been invented to improve the performance of existing wafer steppers, like attenuated phase shifting mask (PSM) and thin Opaque MoSi on Glass (OMOG) mask. Those masks have their own pros and cons. We have done a pseudo finite difference time domain (pFDTD)_simulation study the lithography process performances of three types of masks in the advanced technology node. Both symmetric and asymmetric patterns are simulated. We found that all three masks exhibit similar process window in symmetric test patterns while dramatically differ in the asymmetric pattern. For this specific asymmetric pattern, PSM and OMOG masks show larger depth of focus (DOF) than Binary mask. However, the Mask Error Enhancement Factor (MEEF) and Normalized image log-slope (NILS) are terribly not lithography-friendly using PSM.
随着掩模临界尺寸的缩小，人们发明了革命性的掩模制作方法来改善现有的晶圆步进器的性能，如衰减相移掩模(PSM)和薄不透明MoSi on Glass (OMOG)掩模。本文对三种掩模在先进技术节点上的光刻工艺性能进行了伪时域有限差分(pFDTD)仿真研究。对称和非对称模式都进行了模拟。我们发现所有三种掩模在对称测试模式下表现出相似的过程窗口，而在不对称测试模式下则表现出显著差异。对于这种特殊的不对称模式，PSM和OMOG掩模比二进制掩模具有更大的焦深(DOF)。然而，掩模误差增强因子(MEEF)和归一化图像对数斜率(NILS)在使用PSM时非常不适合光刻。
{"title":"Evaluating the Process Performances of Binary, PSM and OMOG Masks in Advanced Technology Node","authors":"Weimei Xie, Yanpeng Chen, Shirui Yu, Yu Zhang","doi":"10.1109/IWAPS51164.2020.9286801","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286801","url":null,"abstract":"As the critical dimension of mask shrinks, revolutionary mask making methods have been invented to improve the performance of existing wafer steppers, like attenuated phase shifting mask (PSM) and thin Opaque MoSi on Glass (OMOG) mask. Those masks have their own pros and cons. We have done a pseudo finite difference time domain (pFDTD)_simulation study the lithography process performances of three types of masks in the advanced technology node. Both symmetric and asymmetric patterns are simulated. We found that all three masks exhibit similar process window in symmetric test patterns while dramatically differ in the asymmetric pattern. For this specific asymmetric pattern, PSM and OMOG masks show larger depth of focus (DOF) than Binary mask. However, the Mask Error Enhancement Factor (MEEF) and Normalized image log-slope (NILS) are terribly not lithography-friendly using PSM.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125174217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286811
Pengjie Kong, Lisong Dona, Yayi Wei
The distribution of the acid concentration in the chemically amplified resist (CAR) plays an important role in the formation of the final resist profile. During post exposure bake (PEB) process, acid will diffuse and be neutralized in the resist to influence the acid concentration distribution and the process can be described as a reaction-diffusion system in a set of partial differential equations (PDEs). We use Chebyshev spectral method to solve those equations and it turns out to be very fast along with certain accuracy. Our simulation results indicate that Chebyshev spectral method is quite computationally efficient in dealing with PDEs during PEB process in some cases.
{"title":"An application of Chebyshev spectral method in modeling the diffusion of the acid during PEB process","authors":"Pengjie Kong, Lisong Dona, Yayi Wei","doi":"10.1109/IWAPS51164.2020.9286811","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286811","url":null,"abstract":"The distribution of the acid concentration in the chemically amplified resist (CAR) plays an important role in the formation of the final resist profile. During post exposure bake (PEB) process, acid will diffuse and be neutralized in the resist to influence the acid concentration distribution and the process can be described as a reaction-diffusion system in a set of partial differential equations (PDEs). We use Chebyshev spectral method to solve those equations and it turns out to be very fast along with certain accuracy. Our simulation results indicate that Chebyshev spectral method is quite computationally efficient in dealing with PDEs during PEB process in some cases.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125294163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286816
C. Hou, Wenze Yao, Wei Liu, Yiqin Chen, H. Duan, Jie Liu
This paper proposes a fast proximity effect correction (PEC) methodology based on fast multipole method (FMM), to simultaneously achieve high calculation speed and accuracy. It is shown that the proposed methodology has both linear computational time complexity, $O(N)$, where $N$ is number of pixels, and linear parallelization speedup on multiple central processing unit (CPU) cores. These linear scaling scenarios are ideal traits for PEC of large-scale electron beam lithography (EBL). The proposed methodology has been implemented using C++ and OpenMP programming tools, and freely available via the Software-as-a-Service (SaaS) mode (http://hnupecsvl.qicp.vip).
{"title":"Ultrafast and Accurate Proximity Effect Correction of Large-Scale Electron Beam Lithography based on FMM and SaaS","authors":"C. Hou, Wenze Yao, Wei Liu, Yiqin Chen, H. Duan, Jie Liu","doi":"10.1109/IWAPS51164.2020.9286816","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286816","url":null,"abstract":"This paper proposes a fast proximity effect correction (PEC) methodology based on fast multipole method (FMM), to simultaneously achieve high calculation speed and accuracy. It is shown that the proposed methodology has both linear computational time complexity, $O(N)$, where $N$ is number of pixels, and linear parallelization speedup on multiple central processing unit (CPU) cores. These linear scaling scenarios are ideal traits for PEC of large-scale electron beam lithography (EBL). The proposed methodology has been implemented using C++ and OpenMP programming tools, and freely available via the Software-as-a-Service (SaaS) mode (http://hnupecsvl.qicp.vip).","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114877205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286793
E. Manske
More and more new AFM tip-based or laser structuring methods have been attracting attention as alternative lithography approaches for some years now. But most of them have only been demonstrated in the micrometer range so far, and measurement and positioning technology is usually inadequate. Instruments that can measure and structure on flat and even non-flat surfaces in growing fields of application at the atomic level are the focus of the latest developments in consistent continuation of the nanopositioning and nanomeasuring machines created at the Technical University of Ilmenau. The new developed Nano Fabrication Machine 100 (NFM-100) serves as an important experimental platform for basic research in the field of scale-spanning AFM tip-based and laser-based nanofabrication for subnanometer structuring on 4 inch surfaces. The laser interferometer based high precision machine has 20 picometer resolution and subnanometer reproducibility. It can be equipped with AFM heads as well as with laser systems that can both write and read, i.e. measure with nanometer reproducibility and accuracy. This paper describes the extraordinary capabilities of the NFM-100 and selected nanofabrication technologies, e.g. advanced scanning proximal probe lithography based on Fowler-Nordheim electron field emission, direct laser writing, and UV nanoimprint lithography.
{"title":"Alternative tip- and laser- based nanofabrication up to 100 mm on flat and non-flat surfaces with subnanometre precision","authors":"E. Manske","doi":"10.1109/IWAPS51164.2020.9286793","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286793","url":null,"abstract":"More and more new AFM tip-based or laser structuring methods have been attracting attention as alternative lithography approaches for some years now. But most of them have only been demonstrated in the micrometer range so far, and measurement and positioning technology is usually inadequate. Instruments that can measure and structure on flat and even non-flat surfaces in growing fields of application at the atomic level are the focus of the latest developments in consistent continuation of the nanopositioning and nanomeasuring machines created at the Technical University of Ilmenau. The new developed Nano Fabrication Machine 100 (NFM-100) serves as an important experimental platform for basic research in the field of scale-spanning AFM tip-based and laser-based nanofabrication for subnanometer structuring on 4 inch surfaces. The laser interferometer based high precision machine has 20 picometer resolution and subnanometer reproducibility. It can be equipped with AFM heads as well as with laser systems that can both write and read, i.e. measure with nanometer reproducibility and accuracy. This paper describes the extraordinary capabilities of the NFM-100 and selected nanofabrication technologies, e.g. advanced scanning proximal probe lithography based on Fowler-Nordheim electron field emission, direct laser writing, and UV nanoimprint lithography.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122162906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-05DOI: 10.1109/IWAPS51164.2020.9286810
Garry Wang, M. Entezarian, Bob Gieger, Dean Wu
The ever-increasing demand for reducing metal content in fluids used for producing advanced nodes in semiconductor industries for either logic or memory devices require new approaches. The standard method of treatment using ion exchange columns [1] are kinetically limited to low ppb while the industry is striving for low ppt that is 1000 times higher reduction. PGMEA is a major solvent for dissolving photosensitive polymers and needs to be free of any ionic metals that could potentially interfere with photolithographic process, diffuse into functional components of the circuit and reduce performance, yield, or device life. In this study, PGMEA with the grade of SEMI G2 was obtained and processed with 3M™ Metal Ion Purifier Immobilized Ion Exchange Resin Monolith technology. One ion exchange chemistry was based on strong acid while the other was based on amino acid chemistry. Twenty metals were measured before and after processing through the immobilized monolith resin structure. Significant reduction in metal content was observed by reducing even the light elements such as sodium and potassium. The process conditions and reduction of each element by both ion exchange chemistries will be discussed.
{"title":"3M Immobilized Micro-Bed Ion Exchange Resin Bed Technology Treatment of PGMEA","authors":"Garry Wang, M. Entezarian, Bob Gieger, Dean Wu","doi":"10.1109/IWAPS51164.2020.9286810","DOIUrl":"https://doi.org/10.1109/IWAPS51164.2020.9286810","url":null,"abstract":"The ever-increasing demand for reducing metal content in fluids used for producing advanced nodes in semiconductor industries for either logic or memory devices require new approaches. The standard method of treatment using ion exchange columns [1] are kinetically limited to low ppb while the industry is striving for low ppt that is 1000 times higher reduction. PGMEA is a major solvent for dissolving photosensitive polymers and needs to be free of any ionic metals that could potentially interfere with photolithographic process, diffuse into functional components of the circuit and reduce performance, yield, or device life. In this study, PGMEA with the grade of SEMI G2 was obtained and processed with 3M™ Metal Ion Purifier Immobilized Ion Exchange Resin Monolith technology. One ion exchange chemistry was based on strong acid while the other was based on amino acid chemistry. Twenty metals were measured before and after processing through the immobilized monolith resin structure. Significant reduction in metal content was observed by reducing even the light elements such as sodium and potassium. The process conditions and reduction of each element by both ion exchange chemistries will be discussed.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128691829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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