In this study we have performed a thorough characterization of GaN surface after etching up to 100 nm in Cl 2 plasma under various bias voltage and according to the carrier wafer used (Si, SiO 2 , Si 3 N 4 , photoresist). The objective of this article is to evaluate the etch damage and contamination of the GaN surface when materials with other chemical nature are present during the etching. The effects of etching conditions on surface morphology and chemical compositions of etched GaN films are studied in detail using XPS and AFM measurements. To this aim, an universal methodology is proposed to estimate accurately by XPS the stoichiometry of GaN surface exposed to reactive plasmas when only a Al Kα X-ray source is available. The results indicate that the GaN etching mechanisms are very sensitive to the chlorine radical density present in the plasma, the latter being strongly influenced by the carrier wafer. Substrates that are more chemically reactive with Cl 2 plasma such as silicon or photoresist compared to SiO 2 or Si 3 N 4 will lead to a greater loading of atomic chlorine, which in turn will lead to lower GaN etch rates. Moreover, the GaN surface contamination will depend on the etch byproducts ejected by the carrier wafer.
在这项研究中，我们根据所使用的载流子晶片(Si, sio2, Si 3n4，光刻胶)，在不同的偏置电压下，在Cl 2等离子体中蚀刻高达100 nm的GaN表面进行了彻底的表征。本文的目的是评估在蚀刻过程中存在具有其他化学性质的材料时氮化镓表面的蚀刻损伤和污染。采用XPS和AFM测量方法，详细研究了蚀刻条件对蚀刻GaN膜表面形貌和化学成分的影响。为此，提出了一种通用的方法，在只有Al - k - α x射线源的情况下，用XPS准确估计暴露于反应等离子体的GaN表面的化学计量学。结果表明，GaN蚀刻机制对等离子体中氯自由基密度非常敏感，而氯自由基密度受载流子晶片的影响较大。与sio2或si3n4相比，与Cl 2等离子体(如硅或光刻胶)化学反应更强的衬底将导致更大的氯原子负载，这反过来将导致更低的GaN蚀刻速率。此外，氮化镓表面污染将取决于蚀刻副产物喷出的载体晶圆。
{"title":"Influence of the carrier wafer during GaN etching in Cl2 plasma","authors":"Thibaut Meyer, C. Petit-Etienne, E. Pargon","doi":"10.1116/6.0001478","DOIUrl":"https://doi.org/10.1116/6.0001478","url":null,"abstract":"In this study we have performed a thorough characterization of GaN surface after etching up to 100 nm in Cl 2 plasma under various bias voltage and according to the carrier wafer used (Si, SiO 2 , Si 3 N 4 , photoresist). The objective of this article is to evaluate the etch damage and contamination of the GaN surface when materials with other chemical nature are present during the etching. The effects of etching conditions on surface morphology and chemical compositions of etched GaN films are studied in detail using XPS and AFM measurements. To this aim, an universal methodology is proposed to estimate accurately by XPS the stoichiometry of GaN surface exposed to reactive plasmas when only a Al Kα X-ray source is available. The results indicate that the GaN etching mechanisms are very sensitive to the chlorine radical density present in the plasma, the latter being strongly influenced by the carrier wafer. Substrates that are more chemically reactive with Cl 2 plasma such as silicon or photoresist compared to SiO 2 or Si 3 N 4 will lead to a greater loading of atomic chlorine, which in turn will lead to lower GaN etch rates. Moreover, the GaN surface contamination will depend on the etch byproducts ejected by the carrier wafer.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"304 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78907935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Mayandi, M. Schrade, P. Vajeeston, M. Stange, A. Lind, M. Sunding, J. Deuermeier, E. Fortunato, O. Løvvik, A. Ulyashin, S. Diplas, P. Carvalho, T. Finstad
{"title":"High entropy alloy CrFeNiCoCu sputter deposited films: Structure, electrical properties, and oxidation","authors":"J. Mayandi, M. Schrade, P. Vajeeston, M. Stange, A. Lind, M. Sunding, J. Deuermeier, E. Fortunato, O. Løvvik, A. Ulyashin, S. Diplas, P. Carvalho, T. Finstad","doi":"10.1116/6.0001394","DOIUrl":"https://doi.org/10.1116/6.0001394","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"29 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77407731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Many-body effects for the Mg 2s XPS of MgO","authors":"P. Bagus, C. Nelin, C. Brundle, B. Vincent Crist","doi":"10.1116/6.0001655","DOIUrl":"https://doi.org/10.1116/6.0001655","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"38 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88079776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bryan G. Salazar, Christopher R. Brewer, L. McElwee‐White, A. Walker
{"title":"Photoactivated Ru chemical vapor deposition using (η3-allyl)Ru(CO)3X (X = Cl, Br, I): From molecular adsorption to Ru thin film deposition","authors":"Bryan G. Salazar, Christopher R. Brewer, L. McElwee‐White, A. Walker","doi":"10.1116/6.0001490","DOIUrl":"https://doi.org/10.1116/6.0001490","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"18 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73639026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Paul Dill, Xiang Ren, Helen Hintersatz, M. Franz, D. Dentel, C. Tegenkamp, Susann Ebert
{"title":"Atomic layer deposition of titanium phosphate onto reinforcing fibers using titanium tetrachloride, water, and tris(trimethylsilyl) phosphate as precursors","authors":"Paul Dill, Xiang Ren, Helen Hintersatz, M. Franz, D. Dentel, C. Tegenkamp, Susann Ebert","doi":"10.1116/6.0001514","DOIUrl":"https://doi.org/10.1116/6.0001514","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"14 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76617804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solomon T. Oyakhire, Hayrensa Ablat, Nathaniel E. Richey, S. Bent
{"title":"Methyl-methacrylate based aluminum hybrid film grown via three-precursor molecular layer deposition","authors":"Solomon T. Oyakhire, Hayrensa Ablat, Nathaniel E. Richey, S. Bent","doi":"10.1116/6.0001505","DOIUrl":"https://doi.org/10.1116/6.0001505","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"6 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84366470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nanocrystalline sp2-BN thin films have been grown on (0001) 4H-SiC substrates at 1030 °C via continuous flow and discontinuous flow-modulated chemical vapor deposition techniques using diborane (B2H6) and ammonia (NH3) as the B and N sources, respectively. The latter technique enabled observations of both the effect of hydrogen purge steps between precursor injections and the length of injection times for B2H6 on the stoichiometry and microstructure of the films. Stoichiometric BN was achieved in all films grown continuously within the N/B gas phase ratio range of 20–200; this was not observed for the discontinuously grown films unless both the B2H6 flow rate and the injection time were minimized. Cross-sectional transmission electron microscopy of films grown both continuously and discontinuously at N/B = 200 and using short B2H6 injection times relative to that of NH3 for the latter process route revealed the initial growth of ∼4 nm thick partially ordered sp2-BN layers. A transition zone then formed containing randomly oriented polycrystalline grains. Excess B incorporated into the discontinuously grown films during long B2H6 injection times resulted in single layer mixtures of amorphous and sp2-BN without any observed ordering.
{"title":"Flow-modulated deposition of sp2-boron nitride using diborane and ammonia on chemomechanically polished (0001) 4H-SiC substrates","authors":"Philip M. Jean-Remy, M. Cabral, R. Davis","doi":"10.1116/6.0001698","DOIUrl":"https://doi.org/10.1116/6.0001698","url":null,"abstract":"Nanocrystalline sp2-BN thin films have been grown on (0001) 4H-SiC substrates at 1030 °C via continuous flow and discontinuous flow-modulated chemical vapor deposition techniques using diborane (B2H6) and ammonia (NH3) as the B and N sources, respectively. The latter technique enabled observations of both the effect of hydrogen purge steps between precursor injections and the length of injection times for B2H6 on the stoichiometry and microstructure of the films. Stoichiometric BN was achieved in all films grown continuously within the N/B gas phase ratio range of 20–200; this was not observed for the discontinuously grown films unless both the B2H6 flow rate and the injection time were minimized. Cross-sectional transmission electron microscopy of films grown both continuously and discontinuously at N/B = 200 and using short B2H6 injection times relative to that of NH3 for the latter process route revealed the initial growth of ∼4 nm thick partially ordered sp2-BN layers. A transition zone then formed containing randomly oriented polycrystalline grains. Excess B incorporated into the discontinuously grown films during long B2H6 injection times resulted in single layer mixtures of amorphous and sp2-BN without any observed ordering.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"39 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83926992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Spherical-periodic order and relevant short-range structural units in simple crystal structures","authors":"Shuang Zhang, C. Dong, P. Häussler","doi":"10.1116/6.0001535","DOIUrl":"https://doi.org/10.1116/6.0001535","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"16 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86730765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Hwang, H. S. Kim, Dan N. Le, A. Sahota, Jaebeom Lee, Y. Jung, Sang Woo Kim, S. Kim, Rino Choi, Jinho Ahn, B. Hwang, Xiaobing Zhou, Jiyoung Kim
Figure 1. (a) Molecular structure of 1,1,1-tris(dimethylamino)disilane (TADS). The Si-Si bond can provide a higher molecular polarity and surface reactivity, which can be helpful for high-quality ALD SiO2 films. (b) In the temperature range of 115–390 C, TADS exhibits higher or at least comparable GPC in comparison with other aminosilane precursors. (c) The SiO2 films of TADS have not only high bulk film densities (< 2.38 g/cm at 390 C), which is higher than that (2.27 g/cm) of LPCVD SiO2 or close to that (2.4 g/cm ) of thermal oxide, but also high wet etch resistance with a WER of >1.6 nm/min in 200:1 HF.
{"title":"High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane","authors":"S. Hwang, H. S. Kim, Dan N. Le, A. Sahota, Jaebeom Lee, Y. Jung, Sang Woo Kim, S. Kim, Rino Choi, Jinho Ahn, B. Hwang, Xiaobing Zhou, Jiyoung Kim","doi":"10.1116/6.0001519","DOIUrl":"https://doi.org/10.1116/6.0001519","url":null,"abstract":"Figure 1. (a) Molecular structure of 1,1,1-tris(dimethylamino)disilane (TADS). The Si-Si bond can provide a higher molecular polarity and surface reactivity, which can be helpful for high-quality ALD SiO2 films. (b) In the temperature range of 115–390 C, TADS exhibits higher or at least comparable GPC in comparison with other aminosilane precursors. (c) The SiO2 films of TADS have not only high bulk film densities (< 2.38 g/cm at 390 C), which is higher than that (2.27 g/cm) of LPCVD SiO2 or close to that (2.4 g/cm ) of thermal oxide, but also high wet etch resistance with a WER of >1.6 nm/min in 200:1 HF.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"36 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84624187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Fischer, Aaron Routzahn, Ryan J. Gasvoda, Jim Sims, T. Lill
{"title":"Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching","authors":"A. Fischer, Aaron Routzahn, Ryan J. Gasvoda, Jim Sims, T. Lill","doi":"10.1116/6.0001691","DOIUrl":"https://doi.org/10.1116/6.0001691","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"136 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76436564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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