A novel filter design is proposed that employs harmonic rejection characteristics based on half-mode substrate-integrated waveguide resonance cavities and microstrip resonators. The objective is to expand the filter's blocking bandwidth and reduce the filter's size. The filter employs two half-mode substrate-integrated waveguide resonant cavities, which serve to effectively reduce the size of the filter. Moreover, the higher-order modes TE201 and TE202 are unable to propagate within the resonant cavities. The suppression of the TE102 mode is achieved by setting the coupling window between the resonant cavities at the weakest field strength of this mode. Concurrently, two microstrip resonators are integrated into the coupling window, thereby enabling the realization of a fourth-order filter response with only two resonant cavities. The filter was processed and measured, and the results were found to be in good agreement with the simulation. It is proved that the design method proposed in this paper is feasible.
{"title":"Miniaturized filter with harmonic suppression characteristics by embedding microstrip resonators in half-mode substrate-integrated waveguide resonant cavities","authors":"Xiaohei Yan","doi":"10.1002/mop.34347","DOIUrl":"https://doi.org/10.1002/mop.34347","url":null,"abstract":"<p>A novel filter design is proposed that employs harmonic rejection characteristics based on half-mode substrate-integrated waveguide resonance cavities and microstrip resonators. The objective is to expand the filter's blocking bandwidth and reduce the filter's size. The filter employs two half-mode substrate-integrated waveguide resonant cavities, which serve to effectively reduce the size of the filter. Moreover, the higher-order modes TE<sub>201</sub> and TE<sub>202</sub> are unable to propagate within the resonant cavities. The suppression of the TE<sub>102</sub> mode is achieved by setting the coupling window between the resonant cavities at the weakest field strength of this mode. Concurrently, two microstrip resonators are integrated into the coupling window, thereby enabling the realization of a fourth-order filter response with only two resonant cavities. The filter was processed and measured, and the results were found to be in good agreement with the simulation. It is proved that the design method proposed in this paper is feasible.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142429467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A two-channel high-selectivity, wideband bandpass filter has been presented. This is based on a microstrip mixed-impedance resonator and defected ground structure with the mixed coupling strategy. Two pairs of peripheral stepped-impedance resonator (SIR) structures are used as stubs, achieving TZs at the immediate lower and upper cut-off sides of the passband and control the bandwidth, while the other two transmission zeros on the upper cut-off side are yielded through the defected ground structure, and the coupling between the SIR and uniform-impedance resonators components, respectively. A prototype of the circuit is fabricated and measured for validation. The measured results exhibited insertion and return losses better than 1.1 and 20.5 dB, respectively, and high isolation levels exceeding 19 dB. In total, four transmission zeros are achieved. The designed filtering circuit realized a 3-dB fractional bandwidth of 58.1%. There is a 0.95f0 stopband at the upper cutoff. The fabrication of the prototype shows good agreement between the simulated and measured performance.
介绍了一种双通道高选择性宽带通滤波器。该滤波器基于微带混合阻抗谐振器和缺陷接地结构,采用混合耦合策略。两对外围阶梯阻抗谐振器(SIR)结构被用作存根,在通带的下截止边和上截止边实现 TZ 并控制带宽,而上截止边的另外两个传输零点则分别通过缺陷接地结构以及 SIR 和均匀阻抗谐振器组件之间的耦合实现。我们制作并测量了电路原型,以进行验证。测量结果表明,插入损耗和回波损耗分别优于 1.1 和 20.5 dB,隔离度超过 19 dB。总共实现了四个传输零点。设计的滤波电路实现了 58.1% 的 3 dB 分数带宽。在上截止点有一个 0.95f0 的阻带。原型的制造表明,模拟性能与测量性能之间存在良好的一致性。
{"title":"High selectivity wideband two-channel bandpass filter for 5G microwave communication systems","authors":"Michael Wilson Aidoo, Kaijun Song, Yong Fan","doi":"10.1002/mop.34289","DOIUrl":"https://doi.org/10.1002/mop.34289","url":null,"abstract":"<p>A two-channel high-selectivity, wideband bandpass filter has been presented. This is based on a microstrip mixed-impedance resonator and defected ground structure with the mixed coupling strategy. Two pairs of peripheral stepped-impedance resonator (SIR) structures are used as stubs, achieving TZs at the immediate lower and upper cut-off sides of the passband and control the bandwidth, while the other two transmission zeros on the upper cut-off side are yielded through the defected ground structure, and the coupling between the SIR and uniform-impedance resonators components, respectively. A prototype of the circuit is fabricated and measured for validation. The measured results exhibited insertion and return losses better than 1.1 and 20.5 dB, respectively, and high isolation levels exceeding 19 dB. In total, four transmission zeros are achieved. The designed filtering circuit realized a 3-dB fractional bandwidth of 58.1%. There is a 0.95<i>f</i><sub>0</sub> stopband at the upper cutoff. The fabrication of the prototype shows good agreement between the simulated and measured performance.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142429466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The TiS2 compound has attracted considerable attention among researchers in the fields of energy storage and conversion, as well as semiconductor materials. This is due to its remarkable capability to incorporate various elements into its van der Waals gap, as well as its potential to adjust the carrier concentration within the material to optimize its electrically relevant properties. In our study, we employed a terahertz (THz) time-domain spectroscopy system to measure the spectra of TiS2 within the THz frequency range. Through this analysis, we examined the optical parameters, such as transmittance and refractive index, of the TiS2 samples. Additionally, we conducted optical pumping correlation experiments using THz detection technology to investigate the optical pumping effects on TiS2. By analyzing the THz energy transmission process in different states, we were able to calculate and fit the carrier recombination time. The findings of our research hold significant implications for the advancement of THz devices operating in the 6G frequency band.
{"title":"Modulation performance of terahertz waves by titanium disulfide nanosheets towards 6G","authors":"Jintao Wang, Chuanxiang Ye, Wenji Zhong","doi":"10.1002/mop.34354","DOIUrl":"https://doi.org/10.1002/mop.34354","url":null,"abstract":"<p>The TiS<sub>2</sub> compound has attracted considerable attention among researchers in the fields of energy storage and conversion, as well as semiconductor materials. This is due to its remarkable capability to incorporate various elements into its van der Waals gap, as well as its potential to adjust the carrier concentration within the material to optimize its electrically relevant properties. In our study, we employed a terahertz (THz) time-domain spectroscopy system to measure the spectra of TiS<sub>2</sub> within the THz frequency range. Through this analysis, we examined the optical parameters, such as transmittance and refractive index, of the TiS<sub>2</sub> samples. Additionally, we conducted optical pumping correlation experiments using THz detection technology to investigate the optical pumping effects on TiS<sub>2</sub>. By analyzing the THz energy transmission process in different states, we were able to calculate and fit the carrier recombination time. The findings of our research hold significant implications for the advancement of THz devices operating in the 6G frequency band.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142429253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose a novel approach to dual-channel optoelectronic oscillators (OEOs) with enhanced frequency band by leveraging directly modulated (DM) semiconductor lasers under optical injection. In this configuration, the frequency-tuned optical signal from a master laser is introduced into a single-mode slave laser, facilitating multioptical-mode operation. The resulting multiple optical frequencies emitted by the slave laser facilitates a DM-OEO signal at a frequency exceeding the laser's intrinsic modulation bandwidth. Through the deployment of a dual-channel OEO based on the DM multimode laser signal, stable oscillation signals have been successfully achieved simultaneously at 15 and 18 GHz with phase noise levels of 96.43 and 95.62 dBc/Hz, respectively, at a 10-kHz offset frequency.
{"title":"Dual-channel, high-frequency optoelectronic oscillators utilizing optically-injected lasers","authors":"Hyo-Sang Jeong, Anh-Hang Nguyen, Hyuk-Kee Sung","doi":"10.1002/mop.34356","DOIUrl":"https://doi.org/10.1002/mop.34356","url":null,"abstract":"<p>We propose a novel approach to dual-channel optoelectronic oscillators (OEOs) with enhanced frequency band by leveraging directly modulated (DM) semiconductor lasers under optical injection. In this configuration, the frequency-tuned optical signal from a master laser is introduced into a single-mode slave laser, facilitating multioptical-mode operation. The resulting multiple optical frequencies emitted by the slave laser facilitates a DM-OEO signal at a frequency exceeding the laser's intrinsic modulation bandwidth. Through the deployment of a dual-channel OEO based on the DM multimode laser signal, stable oscillation signals have been successfully achieved simultaneously at 15 and 18 GHz with phase noise levels of 96.43 and 95.62 dBc/Hz, respectively, at a 10-kHz offset frequency.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/mop.34356","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142429252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, a frequency-reconfigurable circular patch antenna with a varactor diode has been presented. The proposed antenna has been designed and investigated in four steps: circular patch antenna (Antenna 1), antenna with double slots (Antenna 2), antenna with quad slots (Antenna 3), and antenna with varactor diode (Antenna 4). The proposed antenna has been made compact with rectangular slots and a hyperabrupt junction tuning varactor diode (SMV1249-079LF). The proposed antenna has been designed and produced in 32 × 32 × 0.64 mm3 dimensions, approximately 80% minimized compared to a microstrip circular patch antenna operating at 850 MHZ resonance frequency. This frequency-reconfigurable antenna can perform between the range of 0.85–1.3 GHz frequency with 0–3 V DC voltage tuning of the varactor diode. So, using with the varactor diode, the proposed antenna has obtained a 53% tuning range between 0.85 and 1.3 GHz frequencies. This study offers a different antenna design, compactness, and high tuning ratio compared to previous studies. This frequency reconfigurable antenna can be preferred with its wideband structure in different communications areas and wireless energy transfer systems.
{"title":"Compact frequency-reconfigurable circular patch antenna with varactor diode: Design, tuning, and compactness optimization","authors":"Abdulkadir Cildir, Mahmut Ahmet Gozel","doi":"10.1002/mop.34341","DOIUrl":"https://doi.org/10.1002/mop.34341","url":null,"abstract":"<p>In this study, a frequency-reconfigurable circular patch antenna with a varactor diode has been presented. The proposed antenna has been designed and investigated in four steps: circular patch antenna (Antenna 1), antenna with double slots (Antenna 2), antenna with quad slots (Antenna 3), and antenna with varactor diode (Antenna 4). The proposed antenna has been made compact with rectangular slots and a hyperabrupt junction tuning varactor diode (SMV1249-079LF). The proposed antenna has been designed and produced in 32 × 32 × 0.64 mm<sup>3</sup> dimensions, approximately 80% minimized compared to a microstrip circular patch antenna operating at 850 MHZ resonance frequency. This frequency-reconfigurable antenna can perform between the range of 0.85–1.3 GHz frequency with 0–3 V DC voltage tuning of the varactor diode. So, using with the varactor diode, the proposed antenna has obtained a 53% tuning range between 0.85 and 1.3 GHz frequencies. This study offers a different antenna design, compactness, and high tuning ratio compared to previous studies. This frequency reconfigurable antenna can be preferred with its wideband structure in different communications areas and wireless energy transfer systems.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142429251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, a mm-wave monolithic ceramic waveguide filter using a transition between a grounded coplanar waveguide (GCPW) feed and a ceramic waveguide has been proposed. The published studies on monolithic ceramic waveguide filters with wideband properties for the mm-wave are lacking. A desired external quality factor, satisfying wide bandwidth, is achieved using both inductive and capacitive couplings in the transition. The inductive coupling is realized with a waveguide's hole directly connected to the microstrip line probe of the GCPW. The capacitive coupling is employed with the slots of both GCPW and ceramic waveguide, which are placed facing each other. Adopting the presented transition, the inline monolithic ceramic waveguide filter for a fourth-order Chebyshev response was designed. The fabricated filter provided the insertion and return losses of lower than 1.2 dB and higher than 10 dB, respectively, at frequencies from 26.43 to 29.76 GHz, with a fractional bandwidth of 11.85%.
{"title":"Monolithic ceramic waveguide filter using a transition between GCPW feed and ceramic waveguide for 28 GHz","authors":"Jeong-Hun Park, Seung-Jun Park","doi":"10.1002/mop.34332","DOIUrl":"https://doi.org/10.1002/mop.34332","url":null,"abstract":"<p>In this letter, a mm-wave monolithic ceramic waveguide filter using a transition between a grounded coplanar waveguide (GCPW) feed and a ceramic waveguide has been proposed. The published studies on monolithic ceramic waveguide filters with wideband properties for the mm-wave are lacking. A desired external quality factor, satisfying wide bandwidth, is achieved using both inductive and capacitive couplings in the transition. The inductive coupling is realized with a waveguide's hole directly connected to the microstrip line probe of the GCPW. The capacitive coupling is employed with the slots of both GCPW and ceramic waveguide, which are placed facing each other. Adopting the presented transition, the inline monolithic ceramic waveguide filter for a fourth-order Chebyshev response was designed. The fabricated filter provided the insertion and return losses of lower than 1.2 dB and higher than 10 dB, respectively, at frequencies from 26.43 to 29.76 GHz, with a fractional bandwidth of 11.85%.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/mop.34332","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142428949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fano resonance (FR) and the triggered nonreciprocal thermal radiation (NTR) in a Weyl semimetal (WSM)- incorporated Kretschmann configuration has been observed and analyzed. Employing the anisotropic permittivity tensor, the electromagnetic responses of the proposed layered structure have been studied, and we illustrate that FR and strong nonreciprocity is attributed to the coupling between the planar waveguide mode and surface plasmon polaritons in WSM. It is shown that absorptivity (α) is not consistent with emissivity (e) in the considered angular range, which confirms near-complete violation of Kirchhoff's law with nonmagnetic WSM. To analyze the physical origin of NTR, we performed numerical calculations for the α, e, nonreciprocity (η), as well as the magnetic field inside each layer. The compre-hensive investigation of η with regard to geometric parameters suggests great potential for the practical use of perfect absorption and NTR over a wide range of frequencies and layer thicknesses.
{"title":"Nonreciprocity of thermal radiation in attenuated total reflection-mediated optical waveguide","authors":"Xin Cui, Ziheng Gu, Gaige Zheng","doi":"10.1002/mop.34345","DOIUrl":"https://doi.org/10.1002/mop.34345","url":null,"abstract":"<p>Fano resonance (FR) and the triggered nonreciprocal thermal radiation (NTR) in a Weyl semimetal (WSM)- incorporated Kretschmann configuration has been observed and analyzed. Employing the anisotropic permittivity tensor, the electromagnetic responses of the proposed layered structure have been studied, and we illustrate that FR and strong nonreciprocity is attributed to the coupling between the planar waveguide mode and surface plasmon polaritons in WSM. It is shown that absorptivity (<i>α</i>) is not consistent with emissivity (<i>e</i>) in the considered angular range, which confirms near-complete violation of Kirchhoff's law with nonmagnetic WSM. To analyze the physical origin of NTR, we performed numerical calculations for the <i>α</i>, <i>e</i>, nonreciprocity (<i>η</i>), as well as the magnetic field inside each layer. The compre-hensive investigation of <i>η</i> with regard to geometric parameters suggests great potential for the practical use of perfect absorption and NTR over a wide range of frequencies and layer thicknesses.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142360010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yiyuan Zheng, Kai Zhang, Kunpeng Dai, Huaixin Guo, Jun Qian, Yuechan Kong, Tangsheng Chen
A 220 GHz GaN-based monolithic integrated frequency doubler with high continuous-wave output power has been developed. The doubler achieves improved heat dissipation by establishing the terahertz (THz) monolithic integrated circuit topology with GaN Schottky barrier diodes integrated on a high thermal conductivity SiC substrate. It features six anodes to enhance the power-handling capabilities. A refractory Schottky metal stack is adopted for better thermal stability. The doubler realizes satisfactory performance by introducing the suspended microstrip and an all-in-one output structure. For verification, a prototype of the proposed frequency doubler was fabricated and tested. Measured results show that the proposed doubler produces a continuous-wave output power of 255 mW at 220 GHz with an efficiency of 14.6%, exhibiting excellent potential for powerful THz sources.
我们开发了一种具有高连续波输出功率的 220 GHz 氮化镓基单片集成倍频器。该倍频器采用太赫兹(THz)单片集成电路拓扑结构,将 GaN 肖特基势垒二极管集成在高导热性 SiC 衬底上,从而改善了散热性能。它具有六个阳极,可增强功率处理能力。采用了耐火肖特基金属堆栈,以提高热稳定性。通过引入悬浮微带和一体化输出结构,倍增器实现了令人满意的性能。为了进行验证,我们制作并测试了拟议倍频器的原型。测量结果表明,所提出的倍频器在 220 GHz 频率下可产生 255 mW 的连续波输出功率,效率高达 14.6%,显示出强大太赫兹源的巨大潜力。
{"title":"A 220 GHz GaN-based monolithic integrated frequency doubler delivering over 0.25 W output power","authors":"Yiyuan Zheng, Kai Zhang, Kunpeng Dai, Huaixin Guo, Jun Qian, Yuechan Kong, Tangsheng Chen","doi":"10.1002/mop.34339","DOIUrl":"https://doi.org/10.1002/mop.34339","url":null,"abstract":"<p>A 220 GHz GaN-based monolithic integrated frequency doubler with high continuous-wave output power has been developed. The doubler achieves improved heat dissipation by establishing the terahertz (THz) monolithic integrated circuit topology with GaN Schottky barrier diodes integrated on a high thermal conductivity SiC substrate. It features six anodes to enhance the power-handling capabilities. A refractory Schottky metal stack is adopted for better thermal stability. The doubler realizes satisfactory performance by introducing the suspended microstrip and an all-in-one output structure. For verification, a prototype of the proposed frequency doubler was fabricated and tested. Measured results show that the proposed doubler produces a continuous-wave output power of 255 mW at 220 GHz with an efficiency of 14.6%, exhibiting excellent potential for powerful THz sources.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142430312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A wideband transmitarray antenna (TA) incorporating a polarization conversion metasurface (PCM) is proposed. Four PCM elements with annular metallic polarizers are utilized to provide 2-bit phase compensation without altering the geometric parameters of the elements, resulting in a wideband TA with a bandwidth comparable to that of the individual elements. A prototype of the proposed TA is designed, fabricated, and measured. The measured 1- and 3-dB gain bandwidths of the proposed TA are found to be 10–13.6 GHz (30%) and 9.2–15 GHz (48.3%), respectively, while the effective 1-dB transmission band of the individual elements is 7.8–14.6 GHz. The similarity between the bandwidth of the proposed TA and that of elements used in our design demonstrates less wastage of element bandwidth by the proposed approach. A measured peak gain of 27.2 dBi and a peak aperture efficiency (AE) of 48.7% highlight the promising potential of the proposed TA for long-distance communication, point-to-point communication, and other applications.
本文提出了一种包含极化转换元面(PCM)的宽带发射阵列天线(TA)。利用四个带有环形金属极化器的 PCM 元件,在不改变元件几何参数的情况下提供 2 位相位补偿,从而产生带宽与单个元件带宽相当的宽带 TA。我们设计、制造并测量了拟议 TA 的原型。测量发现,拟议 TA 的 1 分贝和 3 分贝增益带宽分别为 10-13.6 GHz(30%)和 9.2-15 GHz(48.3%),而单个元件的有效 1 分贝传输带宽为 7.8-14.6 GHz。建议的 TA 带宽与我们设计中使用的元件带宽相似,这表明建议的方法减少了元件带宽的浪费。测得的峰值增益为 27.2 dBi,峰值孔径效率(AE)为 48.7%,凸显了拟议 TA 在长距离通信、点对点通信和其他应用中的巨大潜力。
{"title":"A wideband transmitarray antenna based on polarization conversion metasurface with 2-bit phase compensation","authors":"Hanmin Zhang, Zi-Hao Fu, Xue-Song Yang","doi":"10.1002/mop.34351","DOIUrl":"https://doi.org/10.1002/mop.34351","url":null,"abstract":"<p>A wideband transmitarray antenna (TA) incorporating a polarization conversion metasurface (PCM) is proposed. Four PCM elements with annular metallic polarizers are utilized to provide 2-bit phase compensation without altering the geometric parameters of the elements, resulting in a wideband TA with a bandwidth comparable to that of the individual elements. A prototype of the proposed TA is designed, fabricated, and measured. The measured 1- and 3-dB gain bandwidths of the proposed TA are found to be 10–13.6 GHz (30%) and 9.2–15 GHz (48.3%), respectively, while the effective 1-dB transmission band of the individual elements is 7.8–14.6 GHz. The similarity between the bandwidth of the proposed TA and that of elements used in our design demonstrates less wastage of element bandwidth by the proposed approach. A measured peak gain of 27.2 dBi and a peak aperture efficiency (AE) of 48.7% highlight the promising potential of the proposed TA for long-distance communication, point-to-point communication, and other applications.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 10","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142430313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Venkata Siva Prasad, Shrivishal Tripathi, Punya P. Paltani
This article introduces a unique design approach for a compact in-band full-duplex (IBFD) antenna with good isolation in a wider bandwidth at the 2.4 GHz WLAN. The meander slot baluns are innovatively constructed in the feeding network, one balun on the top substrate layer and the other on the bottom substrate layer of the ground, to realize double differential feeding and polarization diversity. The metallic vias that connect one of the baluns in the feeding network with the co-radiating patch further reduce the antenna's overall size. The balun's neutral coupling characteristics of differential potentials, which reduce the leakage currents by creating null potential, and differential filtering, which suppresses the leakage currents by non-coupling fields, generate high isolation in the antenna. The designed balun offers a stable differential feed with a trivial magnitude and phase imbalances of (0.04–0.06) dB and