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Miniaturized filter with harmonic suppression characteristics by embedding microstrip resonators in half-mode substrate-integrated waveguide resonant cavities 通过在半模基底集成波导谐振腔中嵌入微带谐振器实现具有谐波抑制特性的微型滤波器
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-04 DOI: 10.1002/mop.34347
Xiaohei Yan

A novel filter design is proposed that employs harmonic rejection characteristics based on half-mode substrate-integrated waveguide resonance cavities and microstrip resonators. The objective is to expand the filter's blocking bandwidth and reduce the filter's size. The filter employs two half-mode substrate-integrated waveguide resonant cavities, which serve to effectively reduce the size of the filter. Moreover, the higher-order modes TE201 and TE202 are unable to propagate within the resonant cavities. The suppression of the TE102 mode is achieved by setting the coupling window between the resonant cavities at the weakest field strength of this mode. Concurrently, two microstrip resonators are integrated into the coupling window, thereby enabling the realization of a fourth-order filter response with only two resonant cavities. The filter was processed and measured, and the results were found to be in good agreement with the simulation. It is proved that the design method proposed in this paper is feasible.

本文提出了一种新型滤波器设计,它采用了基于半模基底集成波导谐振腔和微带谐振器的谐波抑制特性。其目的是扩大滤波器的阻塞带宽并减小滤波器的尺寸。滤波器采用了两个半模基底集成波导谐振腔,从而有效减小了滤波器的尺寸。此外,高阶模式 TE201 和 TE202 无法在谐振腔内传播。通过将谐振腔之间的耦合窗口设置在该模式的最弱场强处,实现了对 TE102 模式的抑制。同时,耦合窗口中还集成了两个微带谐振器,从而实现了仅有两个谐振腔的四阶滤波器响应。对滤波器进行了处理和测量,发现结果与模拟结果十分吻合。事实证明,本文提出的设计方法是可行的。
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引用次数: 0
High selectivity wideband two-channel bandpass filter for 5G microwave communication systems 用于 5G 微波通信系统的高选择性宽带双通道带通滤波器
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-04 DOI: 10.1002/mop.34289
Michael Wilson Aidoo, Kaijun Song, Yong Fan

A two-channel high-selectivity, wideband bandpass filter has been presented. This is based on a microstrip mixed-impedance resonator and defected ground structure with the mixed coupling strategy. Two pairs of peripheral stepped-impedance resonator (SIR) structures are used as stubs, achieving TZs at the immediate lower and upper cut-off sides of the passband and control the bandwidth, while the other two transmission zeros on the upper cut-off side are yielded through the defected ground structure, and the coupling between the SIR and uniform-impedance resonators components, respectively. A prototype of the circuit is fabricated and measured for validation. The measured results exhibited insertion and return losses better than 1.1 and 20.5 dB, respectively, and high isolation levels exceeding 19 dB. In total, four transmission zeros are achieved. The designed filtering circuit realized a 3-dB fractional bandwidth of 58.1%. There is a 0.95f0 stopband at the upper cutoff. The fabrication of the prototype shows good agreement between the simulated and measured performance.

介绍了一种双通道高选择性宽带通滤波器。该滤波器基于微带混合阻抗谐振器和缺陷接地结构,采用混合耦合策略。两对外围阶梯阻抗谐振器(SIR)结构被用作存根,在通带的下截止边和上截止边实现 TZ 并控制带宽,而上截止边的另外两个传输零点则分别通过缺陷接地结构以及 SIR 和均匀阻抗谐振器组件之间的耦合实现。我们制作并测量了电路原型,以进行验证。测量结果表明,插入损耗和回波损耗分别优于 1.1 和 20.5 dB,隔离度超过 19 dB。总共实现了四个传输零点。设计的滤波电路实现了 58.1% 的 3 dB 分数带宽。在上截止点有一个 0.95f0 的阻带。原型的制造表明,模拟性能与测量性能之间存在良好的一致性。
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引用次数: 0
Modulation performance of terahertz waves by titanium disulfide nanosheets towards 6G 二硫化钛纳米片对 6G 太赫兹波的调制性能
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-02 DOI: 10.1002/mop.34354
Jintao Wang, Chuanxiang Ye, Wenji Zhong

The TiS2 compound has attracted considerable attention among researchers in the fields of energy storage and conversion, as well as semiconductor materials. This is due to its remarkable capability to incorporate various elements into its van der Waals gap, as well as its potential to adjust the carrier concentration within the material to optimize its electrically relevant properties. In our study, we employed a terahertz (THz) time-domain spectroscopy system to measure the spectra of TiS2 within the THz frequency range. Through this analysis, we examined the optical parameters, such as transmittance and refractive index, of the TiS2 samples. Additionally, we conducted optical pumping correlation experiments using THz detection technology to investigate the optical pumping effects on TiS2. By analyzing the THz energy transmission process in different states, we were able to calculate and fit the carrier recombination time. The findings of our research hold significant implications for the advancement of THz devices operating in the 6G frequency band.

TiS2 化合物在能源储存和转换以及半导体材料领域引起了研究人员的极大关注。这是因为它具有将各种元素纳入其范德华间隙的卓越能力,以及调整材料内载流子浓度以优化其电相关特性的潜力。在我们的研究中,我们采用了太赫兹(THz)时域光谱系统来测量 TiS2 在太赫兹频率范围内的光谱。通过分析,我们检测了 TiS2 样品的光学参数,如透射率和折射率。此外,我们还利用太赫兹检测技术进行了光泵浦相关实验,以研究 TiS2 的光泵浦效应。通过分析不同状态下的太赫兹能量传输过程,我们能够计算和拟合载流子重组时间。我们的研究成果对推动在 6G 频段工作的太赫兹设备的发展具有重要意义。
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引用次数: 0
Dual-channel, high-frequency optoelectronic oscillators utilizing optically-injected lasers 利用光注入激光器的双通道高频光电振荡器
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-02 DOI: 10.1002/mop.34356
Hyo-Sang Jeong, Anh-Hang Nguyen, Hyuk-Kee Sung

We propose a novel approach to dual-channel optoelectronic oscillators (OEOs) with enhanced frequency band by leveraging directly modulated (DM) semiconductor lasers under optical injection. In this configuration, the frequency-tuned optical signal from a master laser is introduced into a single-mode slave laser, facilitating multioptical-mode operation. The resulting multiple optical frequencies emitted by the slave laser facilitates a DM-OEO signal at a frequency exceeding the laser's intrinsic modulation bandwidth. Through the deployment of a dual-channel OEO based on the DM multimode laser signal, stable oscillation signals have been successfully achieved simultaneously at 15 and 18 GHz with phase noise levels of 96.43 and 95.62 dBc/Hz, respectively, at a 10-kHz offset frequency.

我们提出了一种新方法,通过利用光注入下的直接调制(DM)半导体激光器,实现具有增强频带的双通道光电振荡器(OEO)。在这种配置中,来自主激光器的频率调谐光信号被引入单模从激光器,从而促进了多光学模式操作。从属激光器发射的多个光学频率可产生频率超过激光器固有调制带宽的 DM-OEO 信号。通过部署基于 DM 多模激光信号的双通道 OEO,成功地在 15 和 18 GHz 频率下同时实现了稳定的振荡信号,在 10 kHz 偏移频率下,相位噪声水平分别为 96.43 和 95.62 dBc/Hz。
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引用次数: 0
Compact frequency-reconfigurable circular patch antenna with varactor diode: Design, tuning, and compactness optimization 带变容二极管的紧凑型频率可重构圆形贴片天线:设计、调谐和紧凑性优化
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-02 DOI: 10.1002/mop.34341
Abdulkadir Cildir, Mahmut Ahmet Gozel

In this study, a frequency-reconfigurable circular patch antenna with a varactor diode has been presented. The proposed antenna has been designed and investigated in four steps: circular patch antenna (Antenna 1), antenna with double slots (Antenna 2), antenna with quad slots (Antenna 3), and antenna with varactor diode (Antenna 4). The proposed antenna has been made compact with rectangular slots and a hyperabrupt junction tuning varactor diode (SMV1249-079LF). The proposed antenna has been designed and produced in 32 × 32 × 0.64 mm3 dimensions, approximately 80% minimized compared to a microstrip circular patch antenna operating at 850 MHZ resonance frequency. This frequency-reconfigurable antenna can perform between the range of 0.85–1.3 GHz frequency with 0–3 V DC voltage tuning of the varactor diode. So, using with the varactor diode, the proposed antenna has obtained a 53% tuning range between 0.85 and 1.3 GHz frequencies. This study offers a different antenna design, compactness, and high tuning ratio compared to previous studies. This frequency reconfigurable antenna can be preferred with its wideband structure in different communications areas and wireless energy transfer systems.

本研究提出了一种带有变容二极管的频率可重构圆形贴片天线。该天线的设计和研究分为四个步骤:圆形贴片天线(天线 1)、双槽天线(天线 2)、四槽天线(天线 3)和变容二极管天线(天线 4)。拟议的天线采用矩形槽和超突变结调谐变容二极管(SMV1249-079LF),结构紧凑。拟议的天线设计和生产尺寸为 32 × 32 × 0.64 mm3,与工作在 850 MHZ 谐振频率的微带圆形贴片天线相比,缩小了约 80%。通过变容二极管 0-3 V 的直流电压调节,这种频率可调式天线可在 0.85-1.3 GHz 频率范围内工作。因此,利用变容二极管,所提出的天线在 0.85 和 1.3 GHz 频率之间获得了 53% 的调谐范围。与之前的研究相比,这项研究提供了不同的天线设计、紧凑性和高调谐比。这种频率可重构天线具有宽带结构,可用于不同的通信领域和无线能量传输系统。
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引用次数: 0
Monolithic ceramic waveguide filter using a transition between GCPW feed and ceramic waveguide for 28 GHz 利用 GCPW 馈电和陶瓷波导之间的过渡实现 28 千兆赫的单片陶瓷波导滤波器
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-01 DOI: 10.1002/mop.34332
Jeong-Hun Park, Seung-Jun Park

In this letter, a mm-wave monolithic ceramic waveguide filter using a transition between a grounded coplanar waveguide (GCPW) feed and a ceramic waveguide has been proposed. The published studies on monolithic ceramic waveguide filters with wideband properties for the mm-wave are lacking. A desired external quality factor, satisfying wide bandwidth, is achieved using both inductive and capacitive couplings in the transition. The inductive coupling is realized with a waveguide's hole directly connected to the microstrip line probe of the GCPW. The capacitive coupling is employed with the slots of both GCPW and ceramic waveguide, which are placed facing each other. Adopting the presented transition, the inline monolithic ceramic waveguide filter for a fourth-order Chebyshev response was designed. The fabricated filter provided the insertion and return losses of lower than 1.2 dB and higher than 10 dB, respectively, at frequencies from 26.43 to 29.76 GHz, with a fractional bandwidth of 11.85%.

在这封信中,我们提出了一种毫米波单片陶瓷波导滤波器,它使用接地共面波导(GCPW)馈电和陶瓷波导之间的过渡。已发表的关于具有宽带特性的毫米波单片陶瓷波导滤波器的研究还很缺乏。在过渡过程中使用电感耦合和电容耦合实现了所需的外部品质因数,满足了宽带要求。电感耦合是通过波导孔直接连接到 GCPW 的微带线探针来实现的。电容耦合是通过 GCPW 和陶瓷波导的槽实现的,这两种耦合都是面对面的。采用所提出的过渡方法,设计出了四阶切比雪夫响应的内嵌式单片陶瓷波导滤波器。制造出的滤波器在 26.43 至 29.76 GHz 频率范围内的插入损耗和回波损耗分别低于 1.2 dB 和高于 10 dB,带宽分数为 11.85%。
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引用次数: 0
Nonreciprocity of thermal radiation in attenuated total reflection-mediated optical waveguide 衰减全反射光波导中的热辐射非互易性
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-30 DOI: 10.1002/mop.34345
Xin Cui, Ziheng Gu, Gaige Zheng

Fano resonance (FR) and the triggered nonreciprocal thermal radiation (NTR) in a Weyl semimetal (WSM)- incorporated Kretschmann configuration has been observed and analyzed. Employing the anisotropic permittivity tensor, the electromagnetic responses of the proposed layered structure have been studied, and we illustrate that FR and strong nonreciprocity is attributed to the coupling between the planar waveguide mode and surface plasmon polaritons in WSM. It is shown that absorptivity (α) is not consistent with emissivity (e) in the considered angular range, which confirms near-complete violation of Kirchhoff's law with nonmagnetic WSM. To analyze the physical origin of NTR, we performed numerical calculations for the α, e, nonreciprocity (η), as well as the magnetic field inside each layer. The compre-hensive investigation of η with regard to geometric parameters suggests great potential for the practical use of perfect absorption and NTR over a wide range of frequencies and layer thicknesses.

我们观察并分析了在韦尔半金属(WSM)与克雷奇曼(Kretschmann)构型结合的结构中发生的法诺共振(Fano resonance,FR)和触发的非互惠热辐射(Nonreciprocal thermal radiation,NTR)。我们利用各向异性的介电常数张量,研究了所提出的层状结构的电磁响应,结果表明,FR 和强非互易性归因于 WSM 中平面波导模式与表面等离子体极化子之间的耦合。研究表明,在所考虑的角度范围内,吸收率(α)与发射率(e)不一致,这证实了非磁性 WSM 几乎完全违反了基尔霍夫定律。为了分析 NTR 的物理起源,我们对每个层内的α、e、非对等性(η)以及磁场进行了数值计算。对几何参数 η 的全面研究表明,在广泛的频率和层厚度范围内,完美吸收和 NTR 的实际应用潜力巨大。
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引用次数: 0
A 220 GHz GaN-based monolithic integrated frequency doubler delivering over 0.25 W output power 输出功率超过 0.25 W 的 220 GHz 氮化镓基单片集成倍频器
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-30 DOI: 10.1002/mop.34339
Yiyuan Zheng, Kai Zhang, Kunpeng Dai, Huaixin Guo, Jun Qian, Yuechan Kong, Tangsheng Chen

A 220 GHz GaN-based monolithic integrated frequency doubler with high continuous-wave output power has been developed. The doubler achieves improved heat dissipation by establishing the terahertz (THz) monolithic integrated circuit topology with GaN Schottky barrier diodes integrated on a high thermal conductivity SiC substrate. It features six anodes to enhance the power-handling capabilities. A refractory Schottky metal stack is adopted for better thermal stability. The doubler realizes satisfactory performance by introducing the suspended microstrip and an all-in-one output structure. For verification, a prototype of the proposed frequency doubler was fabricated and tested. Measured results show that the proposed doubler produces a continuous-wave output power of 255 mW at 220 GHz with an efficiency of 14.6%, exhibiting excellent potential for powerful THz sources.

我们开发了一种具有高连续波输出功率的 220 GHz 氮化镓基单片集成倍频器。该倍频器采用太赫兹(THz)单片集成电路拓扑结构,将 GaN 肖特基势垒二极管集成在高导热性 SiC 衬底上,从而改善了散热性能。它具有六个阳极,可增强功率处理能力。采用了耐火肖特基金属堆栈,以提高热稳定性。通过引入悬浮微带和一体化输出结构,倍增器实现了令人满意的性能。为了进行验证,我们制作并测试了拟议倍频器的原型。测量结果表明,所提出的倍频器在 220 GHz 频率下可产生 255 mW 的连续波输出功率,效率高达 14.6%,显示出强大太赫兹源的巨大潜力。
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引用次数: 0
A wideband transmitarray antenna based on polarization conversion metasurface with 2-bit phase compensation 基于具有 2 位相位补偿的极化转换元面的宽带发射阵列天线
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-30 DOI: 10.1002/mop.34351
Hanmin Zhang, Zi-Hao Fu, Xue-Song Yang

A wideband transmitarray antenna (TA) incorporating a polarization conversion metasurface (PCM) is proposed. Four PCM elements with annular metallic polarizers are utilized to provide 2-bit phase compensation without altering the geometric parameters of the elements, resulting in a wideband TA with a bandwidth comparable to that of the individual elements. A prototype of the proposed TA is designed, fabricated, and measured. The measured 1- and 3-dB gain bandwidths of the proposed TA are found to be 10–13.6 GHz (30%) and 9.2–15 GHz (48.3%), respectively, while the effective 1-dB transmission band of the individual elements is 7.8–14.6 GHz. The similarity between the bandwidth of the proposed TA and that of elements used in our design demonstrates less wastage of element bandwidth by the proposed approach. A measured peak gain of 27.2 dBi and a peak aperture efficiency (AE) of 48.7% highlight the promising potential of the proposed TA for long-distance communication, point-to-point communication, and other applications.

本文提出了一种包含极化转换元面(PCM)的宽带发射阵列天线(TA)。利用四个带有环形金属极化器的 PCM 元件,在不改变元件几何参数的情况下提供 2 位相位补偿,从而产生带宽与单个元件带宽相当的宽带 TA。我们设计、制造并测量了拟议 TA 的原型。测量发现,拟议 TA 的 1 分贝和 3 分贝增益带宽分别为 10-13.6 GHz(30%)和 9.2-15 GHz(48.3%),而单个元件的有效 1 分贝传输带宽为 7.8-14.6 GHz。建议的 TA 带宽与我们设计中使用的元件带宽相似,这表明建议的方法减少了元件带宽的浪费。测得的峰值增益为 27.2 dBi,峰值孔径效率(AE)为 48.7%,凸显了拟议 TA 在长距离通信、点对点通信和其他应用中的巨大潜力。
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引用次数: 0
An in-band full-duplex antenna for 2.4 GHz WLAN using differential-feed based neutral coupling for isolation enhancement 用于 2.4 GHz WLAN 的带内全双工天线,利用基于差分馈电的中性耦合增强隔离度
IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-28 DOI: 10.1002/mop.34336
D. Venkata Siva Prasad, Shrivishal Tripathi, Punya P. Paltani

This article introduces a unique design approach for a compact in-band full-duplex (IBFD) antenna with good isolation in a wider bandwidth at the 2.4 GHz WLAN. The meander slot baluns are innovatively constructed in the feeding network, one balun on the top substrate layer and the other on the bottom substrate layer of the ground, to realize double differential feeding and polarization diversity. The metallic vias that connect one of the baluns in the feeding network with the co-radiating patch further reduce the antenna's overall size. The balun's neutral coupling characteristics of differential potentials, which reduce the leakage currents by creating null potential, and differential filtering, which suppresses the leakage currents by non-coupling fields, generate high isolation in the antenna. The designed balun offers a stable differential feed with a trivial magnitude and phase imbalances of (0.04–0.06) dB and ±� � 1� � 0 $pm {1}^{0}$, respectively. The antenna offers a minimum isolation of 78 dB with a wider bandwidth of 130 MHz. The far-field measurement shows broadside radiation with low cross-polar levels of less than −32 dB. A prototype is fabricated on FR-4 substrate layers with an overall size of (0.8 × 0.8 × 0.012)λ� � 0 ${lambda }_{0}$ (λ� � 0 ${lambda }_{0}$ is the free space wavelength of the frequency f� � 0� � =� � 2.4 ${{f}}_{0}=2.4$ GHz) to validate the proposed design performance. The measured results of the prototype properly correlate with the simulated results.

本文介绍了一种独特的设计方法,用于在 2.4 GHz WLAN 更宽的带宽内实现良好隔离的紧凑型带内全双工(IBFD)天线。在馈电网络中创新性地构建了蜿蜒槽平衡器,一个平衡器位于基板顶层,另一个位于基板底层,以实现双差分馈电和极化分集。金属通孔将馈电网络中的一个平衡器与共辐射贴片连接起来,进一步减小了天线的整体尺寸。平衡器的差分电位中性耦合特性可通过创建空电位来减少泄漏电流,而差分滤波可通过非耦合场抑制泄漏电流,从而在天线中产生高隔离度。所设计的平衡器可提供稳定的差分馈电,幅值和相位不平衡分别为 (0.04-0.06) dB 和 ± 1 0 $pm {1}^{0}$ 。天线的最小隔离度为 78 dB,带宽为 130 MHz。远场测量显示,该天线具有小于 -32 dB 的低交叉极性水平的宽边辐射。为了验证所提出的设计性能,我们在总尺寸为 (0.8 × 0.8 × 0.012) λ 0 ${lambda }_{0}$ (λ 0 ${lambda }_{0}$ 是频率 f 0 = 2.4 ${{f}}_{0}=2.4$ GHz 的自由空间波长)的 FR-4 基板层上制作了一个原型。原型的测量结果与模拟结果完全吻合。
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引用次数: 0
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Microwave and Optical Technology Letters
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