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Mechanochemical Synthesis of Nanodispersed Compositions on the Base of Zn, Ce and Mo Oxides 基于锌、铈、钼氧化物的纳米分散组合物的机械化学合成
Q4 Materials Science Pub Date : 2022-06-01 DOI: 10.15407/nnn.20.02.359
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引用次数: 0
Applications of Nanoporous and Metamaterials: An Unornamented Review 纳米多孔材料和超材料的应用综述
Q4 Materials Science Pub Date : 2022-06-01 DOI: 10.15407/nnn.20.02.289
N. Prasad, T. A. Babu, N. Madhavi, S. Ramesh
Materials with pore sizes less than hundred nanometres are considered nanoporous. Their organic/inorganic framework supports their porous nature, and the pores are filled with fluid. The pores of consistent shape and fixed diameter are essential for these materials in specific applications. They own certain magnetic, electrical, and optical properties, which signi-fy them in various applications such as signal transmission, energy, medicine, etc . Apart from natural nanoporous materials in existence, fabrication of materials with required melting point through combining polymers is possible. Materials, which are tailored to achieve unnatural electromagnetic properties like negative dielectric constant, negative refractive index, electromagnetic index, etc ., are known as metamaterials. They are microscopically built from conventional materials such as metals and die-lectrics like plastics. Some of the metamaterials may be nanoporous but not all. Metamaterials find significant applications in designing of antennas, cloaking devices, sensing devices, etc . In view of the importance related to nanoporous and metamaterials, some of their applications are reviewed to the possible extent.
孔径小于100纳米的材料被认为是纳米多孔材料。它们的有机/无机框架支持它们的多孔性,孔隙中充满了流体。具有一致形状和固定直径的孔对于这些材料在特定应用中是必不可少的。它们具有一定的磁性、电学和光学性质,这标志着它们在信号传输、能源、医学等方面的各种应用。除了现有的天然纳米多孔材料外,通过结合聚合物制造具有所需熔点的材料是可能的。为实现诸如负介电常数、负折射率、电磁折射率等非自然电磁特性而量身定制的材料被称为超材料。它们是由金属等传统材料和塑料等模具制成的。一些超材料可能是纳米多孔的,但不是全部。超材料在天线、隐身装置、传感装置等的设计中有着重要的应用。鉴于纳米多孔材料和超材料的重要性,本文对纳米多孔材料和超材料的一些应用进行了综述。
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引用次数: 0
Studies on Characteristics of Polymer/Ceramics Nanocomposites for Biomedical and Industrial Applications 高分子/陶瓷纳米复合材料的生物医学和工业应用特性研究
Q4 Materials Science Pub Date : 2022-06-01 DOI: 10.15407/nnn.20.02.535
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引用次数: 0
Heat-Transfer Processes in Multilayer Nanocomposite Systems During Cutting 多层纳米复合材料系统切削过程中的传热过程
Q4 Materials Science Pub Date : 2022-06-01 DOI: 10.15407/nnn.20.02.385
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引用次数: 1
Optical Properties of Copper Monosulphide Nanoparticles in Near-Infrared Spectrum Region 纳米硫化铜在近红外光谱区的光学性质
Q4 Materials Science Pub Date : 2022-06-01 DOI: 10.15407/nnn.20.02.345
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引用次数: 0
XPS Investigation of Indium-Saving Indium–Tin Oxide (ITO) Thin Films 省铟氧化铟锡(ITO)薄膜的XPS研究
Q4 Materials Science Pub Date : 2022-06-01 DOI: 10.15407/nnn.20.02.305
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引用次数: 0
Effect of Gold Nanoparticles on Cryopreserved Mesenchymal Stem Cells 金纳米粒子对冷冻保存的间充质干细胞的影响
Q4 Materials Science Pub Date : 2022-03-01 DOI: 10.15407/nnn.20.01.249
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引用次数: 0
Fabrication and Properties of Film Nanocomposites (PVA–PAA)1–x/TiNx for Energy Storage and Release Application 用于储能和释放应用的薄膜纳米复合材料(PVA–PAA)1–x/TiNx的制备和性能
Q4 Materials Science Pub Date : 2022-03-01 DOI: 10.15407/nnn.20.01.165
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引用次数: 0
Theoretical Study of the Conduction Band and Energy Gap of GaInNAs/InP Quantum Well Structure GaInNAs/InP量子阱结构导带和能隙的理论研究
Q4 Materials Science Pub Date : 2022-03-01 DOI: 10.15407/nnn.20.01.015
Hassan T. B. ALHammade
Changes of temperature and composition play a major role in enhancement of the electronic properties of low-dimensional semiconductor devices. Therefore, the interest of researchers in this field is increased. In this article, we study the effect of both the temperature and the nitrogen ratio on the electronic structure of Ga x In 1  x N y As 1  y /InP quantum well. The band anticrossing model, Varshni model, and Bose–Einstein model are adopted to determine the nitrogen effect on conduction band ( E  and E  ). The band gap of Ga x In 1  x As as ternary alloy, and band offsets (  E c ,  E v ) for the Ga x In 1  x N y As 1  y /InP quantum wells are estimated as functions of nitrogen content and temperature. The splitting of conduction band into two non-parabolic subbands due to adding the nitrogen to GaInAs alloy contributes into increase of the band offset of Ga x In 1  x N y As 1  y /InP quantum well, and thus, into increase of the number of energy states inside the quantum well. The results may be useful for applications in electronic and optical devices.
温度和成分的变化对提高低维半导体器件的电子性能起着重要的作用。因此,研究人员对这一领域的兴趣增加了。在本文中,我们研究了温度和氮比对Ga x In 1 × x N y As 1 × y /InP量子阱电子结构的影响。采用能带反交叉模型、Varshni模型和玻色-爱因斯坦模型来确定氮对导带(E *和E)的影响。Ga的带隙在1x x作为三元合金,和带偏移量(E c,E v)的Ga x 1x N y 1y / InP量子井估计含氮量和温度的函数。在GaInAs合金中加入氮气使导带分裂为两个非抛物型的子带,增加了Ga x in1 × x N y as1 × y /InP量子阱的能带偏移量,从而增加了量子阱内的能态数。研究结果可用于电子和光学器件的应用。
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引用次数: 0
Theoretical Method of Determining the Physical Parameters of Graphene 确定石墨烯物理参数的理论方法
Q4 Materials Science Pub Date : 2022-03-01 DOI: 10.15407/nnn.20.01.001
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引用次数: 1
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Nanosistemi, Nanomateriali, Nanotehnologii
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