Thermal properties characterizations for carbon nanotubes (CNTs), carboxyl group-functionalized carbon nanotubes (FCNT), and graphite were presented in the paper. TGA/DSC and TEM techniques were used for characterization. The features of TGA characteristics transformation for synthesized carbon nanomaterials were investigated. The specific heat capacities of the samples at a constant pressure increased as the temperature increased.
{"title":"Investigation of thermal properties of carbon nanotubes and carboxyl group - functionalized carbon nanotubes","authors":"R.G. Abaszade, E.M. Aliyev, M.B. Babanli, V.O. Kotsyubynsky, R.I. Zapukhlyak, A.G. Mammadov, H.F. Budak, A.E. Kasapoglu, E. Gür, T.O. Margitych, M.O. Stetsenko","doi":"10.15330/pcss.24.3.530-535","DOIUrl":"https://doi.org/10.15330/pcss.24.3.530-535","url":null,"abstract":"Thermal properties characterizations for carbon nanotubes (CNTs), carboxyl group-functionalized carbon nanotubes (FCNT), and graphite were presented in the paper. TGA/DSC and TEM techniques were used for characterization. The features of TGA characteristics transformation for synthesized carbon nanomaterials were investigated. The specific heat capacities of the samples at a constant pressure increased as the temperature increased.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134886240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The paper presents the results of computer modeling of the proposed functional-electrical circuit of integrated signal converters (ISC) from photosensitive elements based on CMOS operational amplifiers, which is intended for the construction of an element base of hybrid sensor microsystems for biomedical applications. A feature of this ISC is the regulation and filtering of the amplitude of the constant component in the amplified signal from the diode photosensitive element in the wave range of 400 - 1040 nm.
Computer simulation of the functioning of the device was carried out, the constituent components were determined and their parametric optimization was carried out. The results of experimental studies and computer modeling agree well, which confirms the correct functioning of the proposed signal converter from photosensitive elements. The developed ISC is suitable for creating real devices, both on the basis of discrete components and in an integrated design, as an element of sensor microsystems-on-a-chip or intelligent sensors.
{"title":"Modeling of integrated signal converters for biomedical sensor microsystems","authors":"I.T. Kogut, B.S. Dzundza, V.I. Holota, O.I. Bulbuk, V.V. Fedoriuk, L.I. Nykyruy","doi":"10.15330/pcss.24.3.515-519","DOIUrl":"https://doi.org/10.15330/pcss.24.3.515-519","url":null,"abstract":"The paper presents the results of computer modeling of the proposed functional-electrical circuit of integrated signal converters (ISC) from photosensitive elements based on CMOS operational amplifiers, which is intended for the construction of an element base of hybrid sensor microsystems for biomedical applications. A feature of this ISC is the regulation and filtering of the amplitude of the constant component in the amplified signal from the diode photosensitive element in the wave range of 400 - 1040 nm.
 Computer simulation of the functioning of the device was carried out, the constituent components were determined and their parametric optimization was carried out. The results of experimental studies and computer modeling agree well, which confirms the correct functioning of the proposed signal converter from photosensitive elements. The developed ISC is suitable for creating real devices, both on the basis of discrete components and in an integrated design, as an element of sensor microsystems-on-a-chip or intelligent sensors.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135860467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-24DOI: 10.15330/pcss.24.3.509-514
V. Ivashko, O. Krulikovskyi, A. Samila
This work is devoted to the study of the impurities effect in 2D spin crossover nanosystem in frame work of an Ising-like model. Results were obtained by means of Monte Carlo modeling technique, based on the heat bath algorithm. It is shown, that the impurities change the system’s thermal hysteresis width and shift the spin transition curves (HS → LS). In this manner, impurities can act as an additional influence parameter on the transition curves. The considered effect is not significant, but nevertheless should be taken into account in the developing process of nanoscale devices based on spin crossover compounds.
{"title":"Role of the impurities in 2D spin crossover nanoparticle: Monte Carlo study","authors":"V. Ivashko, O. Krulikovskyi, A. Samila","doi":"10.15330/pcss.24.3.509-514","DOIUrl":"https://doi.org/10.15330/pcss.24.3.509-514","url":null,"abstract":"This work is devoted to the study of the impurities effect in 2D spin crossover nanosystem in frame work of an Ising-like model. Results were obtained by means of Monte Carlo modeling technique, based on the heat bath algorithm. It is shown, that the impurities change the system’s thermal hysteresis width and shift the spin transition curves (HS → LS). In this manner, impurities can act as an additional influence parameter on the transition curves. The considered effect is not significant, but nevertheless should be taken into account in the developing process of nanoscale devices based on spin crossover compounds.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135926339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-24DOI: 10.15330/pcss.24.3.503-508
V.V. Romaka, V.A. Romaka, Yu. Stadnyk, L. Romaka, A. Horyn, V. Pashkevych, P. Haraniuk
Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous magnetization. It is shown that the change in the unit cell parameter a(x) and the mixing enthalpy ΔHmix(х) depends little on the presence or absence of spontaneous magnetization. Modeling of the distribution of the density of electronic states DOS in the presence of a magnetic moment on V atoms revealed the splitting of energy states with spins up and down while preserving the band gap εg of Lu1-xVxNiSb. The relationship between the concentration of magnetic V atoms in Lu1-xVxNiSb and the Curie temperature ТС, when spontaneous magnetization is destroyed and the substance becomes paramagnetic, is established. The solid solution semiconductor Lu1-xVxNiSb, provided spontaneous magnetization is present, can be considered as a promising magnetocaloric.
{"title":"Modeling of the properties of the semiconductor solid solution Lu1-xVxNiSb in the presence of magnetic ordering","authors":"V.V. Romaka, V.A. Romaka, Yu. Stadnyk, L. Romaka, A. Horyn, V. Pashkevych, P. Haraniuk","doi":"10.15330/pcss.24.3.503-508","DOIUrl":"https://doi.org/10.15330/pcss.24.3.503-508","url":null,"abstract":"Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous magnetization. It is shown that the change in the unit cell parameter a(x) and the mixing enthalpy ΔHmix(х) depends little on the presence or absence of spontaneous magnetization. Modeling of the distribution of the density of electronic states DOS in the presence of a magnetic moment on V atoms revealed the splitting of energy states with spins up and down while preserving the band gap εg of Lu1-xVxNiSb. The relationship between the concentration of magnetic V atoms in Lu1-xVxNiSb and the Curie temperature ТС, when spontaneous magnetization is destroyed and the substance becomes paramagnetic, is established. The solid solution semiconductor Lu1-xVxNiSb, provided spontaneous magnetization is present, can be considered as a promising magnetocaloric.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135926338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-19DOI: 10.15330/pcss.24.3.499-502
Ya.I. Lepikh, I.K. Doycho
Physico-chemical processes that can be used to free industrial leaks from contamination with aromatic compounds were considered in this work. It has been demonstrated that catalytic oxidation with ruthenium dioxide can serve as an effective purification method. An original way of detection of the catalytic oxidation process completion by the photoluminescent method is proposed. A block diagram of the purification setup is given. The results can be used to solve the problem of protecting the environment from certain harmful pollutants.
{"title":"Catalytic oxidation of aromatic compounds by nanostructured ruthenium dioxide","authors":"Ya.I. Lepikh, I.K. Doycho","doi":"10.15330/pcss.24.3.499-502","DOIUrl":"https://doi.org/10.15330/pcss.24.3.499-502","url":null,"abstract":"Physico-chemical processes that can be used to free industrial leaks from contamination with aromatic compounds were considered in this work. It has been demonstrated that catalytic oxidation with ruthenium dioxide can serve as an effective purification method. An original way of detection of the catalytic oxidation process completion by the photoluminescent method is proposed. A block diagram of the purification setup is given. The results can be used to solve the problem of protecting the environment from certain harmful pollutants.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135109048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped β-Ga2O3 thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the 4А2 ground level to the 4Т1 and 4Т2 excited states in Cr3+ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the 4T2 – 4A2 transitions in Cr3+ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of R-lines were interpreted.
{"title":"Luminescence of Cr-doped β-Ga2O3 thin films","authors":"O.M. Bordun, B.O. Bordun, I.Yo. Kukharskyy, D.M. Maksymchuk, I.I. Medvid","doi":"10.15330/pcss.24.3.490-494","DOIUrl":"https://doi.org/10.15330/pcss.24.3.490-494","url":null,"abstract":"The results of investigation of optical excitation, photoluminescence (PL) and cathodoluminescence (CL) spectra in Cr-doped β-Ga2O3 thin films are presented. The broad bands due to the generation of electron-hole pairs and transitions from the 4А2 ground level to the 4Т1 and 4Т2 excited states in Cr3+ ions are observed in the photoexcitation spectra. The R-lines and phonon repetitions of R-lines are observed on the luminescence spectra against the background of a broad structureless band with a maximum around 700 nm, caused by the 4T2 – 4A2 transitions in Cr3+ ions. The crystal field force Dq was determined and the Stokes and anti-Stokes repetitions of R-lines were interpreted.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135016227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A comparative analysis of the edge absorption spectra measured in the temperature range of 290–470 K for two types of zinc selenide substrates has been carried out. It has been established that the self-absorption edge of pure ZnSe: Yb melt crystals is described by the «crystalline» approximation of the general Urbach rule, which is a consequence of dynamic disordering. In samples doped with ytterbium, at 330 K, a reversible transition from dynamic to static disordering was detected, which is described by the “glassy” approximation of the general Urbach rule.
{"title":"Features of the management of the rule of Urbakh in ZnSe:Yb crystals","authors":"O.V. Kinzerska, I.M. Senko, M.M. Slyotov, O.M. Slyotov, T.M. Mazur","doi":"10.15330/pcss.24.3.495-498","DOIUrl":"https://doi.org/10.15330/pcss.24.3.495-498","url":null,"abstract":"A comparative analysis of the edge absorption spectra measured in the temperature range of 290–470 K for two types of zinc selenide substrates has been carried out. It has been established that the self-absorption edge of pure ZnSe: Yb melt crystals is described by the «crystalline» approximation of the general Urbach rule, which is a consequence of dynamic disordering. In samples doped with ytterbium, at 330 K, a reversible transition from dynamic to static disordering was detected, which is described by the “glassy” approximation of the general Urbach rule.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135016059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-18DOI: 10.15330/pcss.24.3.477-483
Samirkumar R. Bhelave, A.N. Yerpude, S. J. Dhoble
Sr3Al32O51:Eu3+ phosphor prepared successfully by simple combustion method. Prepared matrix synthesized for different percentage of composition for rare earth Eu3+ = (0.5, 1.0, 1.5, 2.0 and 2.5). Photoluminescence property was taken for the given doped phosphor which shows the excitation peak at 395 nm and 466 nm respectively. Emission peak observed at 593 nm and 613 nm for excitation wavelength 395 nm and same emission peak observed for excitation wavelength 466 nm comparatively less intense than 395 nm. The phase of the synthesized phosphor confirmed by X-ray diffraction spectroscopy (XRD), Scanning electron microscopy (SEM), Photoluminescence (Pl) property shows that the given matrix is the one of the potential material which can be used for solid state lightening.
{"title":"Photoluminescence study of Sr3Al32O51:Eu3+ phosphor for Solid state lighting applications","authors":"Samirkumar R. Bhelave, A.N. Yerpude, S. J. Dhoble","doi":"10.15330/pcss.24.3.477-483","DOIUrl":"https://doi.org/10.15330/pcss.24.3.477-483","url":null,"abstract":"Sr3Al32O51:Eu3+ phosphor prepared successfully by simple combustion method. Prepared matrix synthesized for different percentage of composition for rare earth Eu3+ = (0.5, 1.0, 1.5, 2.0 and 2.5). Photoluminescence property was taken for the given doped phosphor which shows the excitation peak at 395 nm and 466 nm respectively. Emission peak observed at 593 nm and 613 nm for excitation wavelength 395 nm and same emission peak observed for excitation wavelength 466 nm comparatively less intense than 395 nm. The phase of the synthesized phosphor confirmed by X-ray diffraction spectroscopy (XRD), Scanning electron microscopy (SEM), Photoluminescence (Pl) property shows that the given matrix is the one of the potential material which can be used for solid state lightening.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135203641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For the first time, the effect of B2O3 additive on the IR transmission spectra of ZrF4 and HfF4 samples and the optical properties of the coatings obtained from them was investigated. A significant difference in the shape of the absorption bands and the position of the vibration peaks of the Zirconium tetrafluoride and Hafnium tetrafluoride bonds was revealed. An assumption is made about the influence of ZrF4 polymorphism on the ratio of the vapor pressures of the specified compounds in the region of the conditional temperature of evaporation in a deep vacuum. The positive effect of the B2O3 additive on the rate of evaporation of system samples and condensation on substrates is shown. The values of the refractive indices of the coatings are about 1.53. An exception is the refractive index of the HfF4 coating (1.57), which can be attributed to the alternative (monoclinic) syngony of its crystal structure.
{"title":"Effect of B2O3 addition on optical properties of Zirconium and Hafnium tetrafluorides in polycrystalline and thin film states","authors":"V.F. Zinchenko, G.V. Volchak, O.V. Mozkova, O.H. Yeriomin, P.H. Doha","doi":"10.15330/pcss.24.3.484-489","DOIUrl":"https://doi.org/10.15330/pcss.24.3.484-489","url":null,"abstract":"For the first time, the effect of B2O3 additive on the IR transmission spectra of ZrF4 and HfF4 samples and the optical properties of the coatings obtained from them was investigated. A significant difference in the shape of the absorption bands and the position of the vibration peaks of the Zirconium tetrafluoride and Hafnium tetrafluoride bonds was revealed. An assumption is made about the influence of ZrF4 polymorphism on the ratio of the vapor pressures of the specified compounds in the region of the conditional temperature of evaporation in a deep vacuum. The positive effect of the B2O3 additive on the rate of evaporation of system samples and condensation on substrates is shown. The values of the refractive indices of the coatings are about 1.53. An exception is the refractive index of the HfF4 coating (1.57), which can be attributed to the alternative (monoclinic) syngony of its crystal structure.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135203639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-14DOI: 10.15330/pcss.24.3.467-476
O.V. Smitiukh, I.I. Petrus’
Phase equilibria in the quasi-ternary systems HgS–Ga2S3–Bi(Sb)2S3 were studied by physico-chemical analysis methods on 177 alloys that were synthesized by direct single-temperature method. Phase diagrams of the quasi-binary systems HgS–Bi2S3 and Ga2S3–Bi2S3, six vertical sections (HgGa2S4–HgBi2S4, HgGa2S4–Bi2S3, HgGa6S10–Bi2S3, HgGa6S10–HgBi2S4, HgGa2S4–Sb2S3, and HgS–“GaSbS3”), and liquidus surface projections were investigated. Due to large primary crystallization region of mercury thiogallate, particularly at the HgGa2S4–Bi2S3 and HgGa2S4–HgBi2S4 sections, and low temperature (950-1050 K), the growth of single crystals of mercury thiogallate is possible using solution-melt method.
{"title":"The Phase Еquilibrium in the HgS–Ga2S3–Bi(Sb)2S3 Systems","authors":"O.V. Smitiukh, I.I. Petrus’","doi":"10.15330/pcss.24.3.467-476","DOIUrl":"https://doi.org/10.15330/pcss.24.3.467-476","url":null,"abstract":"Phase equilibria in the quasi-ternary systems HgS–Ga2S3–Bi(Sb)2S3 were studied by physico-chemical analysis methods on 177 alloys that were synthesized by direct single-temperature method. Phase diagrams of the quasi-binary systems HgS–Bi2S3 and Ga2S3–Bi2S3, six vertical sections (HgGa2S4–HgBi2S4, HgGa2S4–Bi2S3, HgGa6S10–Bi2S3, HgGa6S10–HgBi2S4, HgGa2S4–Sb2S3, and HgS–“GaSbS3”), and liquidus surface projections were investigated. Due to large primary crystallization region of mercury thiogallate, particularly at the HgGa2S4–Bi2S3 and HgGa2S4–HgBi2S4 sections, and low temperature (950-1050 K), the growth of single crystals of mercury thiogallate is possible using solution-melt method.","PeriodicalId":20137,"journal":{"name":"Physics and Chemistry of Solid State","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134970363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：