Pub Date : 2022-05-28DOI: 10.56042/ijpap.v60i6.60926
{"title":"Dielectric Analysis of Single Walled Carbon Nanotubes Loaded SMC Composites Depending on Resin Type","authors":"","doi":"10.56042/ijpap.v60i6.60926","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.60926","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120943720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-28DOI: 10.56042/ijpap.v60i6.60672
{"title":"Preparation and Investigation of Transparent Conducting Aluminium-doped Zinc Oxide Films Prepared by Sol-gel Method for Sensor Application","authors":"","doi":"10.56042/ijpap.v60i6.60672","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.60672","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122418158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-28DOI: 10.56042/ijpap.v60i6.60217
{"title":"Entanglement for Qubit and Qudit in Single Photoionization of Rotationally State Selected, Oriented C3v Polyatomic Molecules","authors":"","doi":"10.56042/ijpap.v60i6.60217","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.60217","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132543861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-28DOI: 10.56042/ijpap.v60i6.61055
{"title":"Photocatalytic Study of Mo/N co-doped Titanium Dioxide (TiO2) Nanoparticles Under Visible Light Irradiation","authors":"","doi":"10.56042/ijpap.v60i6.61055","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.61055","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126179699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-28DOI: 10.56042/ijpap.v60i6.61756
M. Lal, S. Solanki, Rishabh Sharma, V. Agotiya
In this paper, spectra of the quarkonium states has been studied using the conditions temperature, chemical potential and the magnetic field. Here our main focus is to study the effect of strong magnetic field on the quarkonium properties. The binding energies and the dissociation temperature for the ground and the first excited states of the charmonium and bottomonium in the presence of strong magnetic field at chemical potential mu = 500 MeV has been studied. Here we use quasiparticle (QP) Debye mass depending upon temperature, magnetic field and chemical potential obtained from the quasiparticle approach. The Debye mass strongly increases at different values of temperature and magnetic field. The binding energy decreases with increase in the temperature at different magnetic field eB= 0.3, 0.5, and 0.7 GeV2 and also decreases with magnetic field at different at T=200,300 and 400 MeV for the J/psi, psi, upsilon, and upsilon prime states of the quarkonia. The dissociation temperature of the quarkonium states falls with the increasing values of the magnetic field at critical temperature Tc =197 MeV
{"title":"Melting of Quarkonia in strong magnetic field","authors":"M. Lal, S. Solanki, Rishabh Sharma, V. Agotiya","doi":"10.56042/ijpap.v60i6.61756","DOIUrl":"https://doi.org/10.56042/ijpap.v60i6.61756","url":null,"abstract":"In this paper, spectra of the quarkonium states has been studied using the conditions temperature, chemical potential and the magnetic field. Here our main focus is to study the effect of strong magnetic field on the quarkonium properties. The binding energies and the dissociation temperature for the ground and the first excited states of the charmonium and bottomonium in the presence of strong magnetic field at chemical potential mu = 500 MeV has been studied. Here we use quasiparticle (QP) Debye mass depending upon temperature, magnetic field and chemical potential obtained from the quasiparticle approach. The Debye mass strongly increases at different values of temperature and magnetic field. The binding energy decreases with increase in the temperature at different magnetic field eB= 0.3, 0.5, and 0.7 GeV2 and also decreases with magnetic field at different at T=200,300 and 400 MeV for the J/psi, psi, upsilon, and upsilon prime states of the quarkonia. The dissociation temperature of the quarkonium states falls with the increasing values of the magnetic field at critical temperature Tc =197 MeV","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123964741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-28DOI: 10.56042/ijpap.v60i5.24037
{"title":"Erratum: Self-diffusion coefficients of liquid alkali metals described by the square-well model within the mean spherical approximation","authors":"","doi":"10.56042/ijpap.v60i5.24037","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.24037","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116153840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-28DOI: 10.56042/ijpap.v60i5.56673
{"title":"Influences of Cattaneo-Christov Heat Flux, Joule Heating, Viscous Dissipation and Chemical Reaction on Hydromagnetic Pulsating Flow of Oldroyd-B Nanofluid in a Porous Channel","authors":"","doi":"10.56042/ijpap.v60i5.56673","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.56673","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130676250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-28DOI: 10.56042/ijpap.v60i5.61700
Umayia Mushtaqa, Md. Waseem Akrama, Dinesh Prasada, Bal Chand Nagarb
Continuous scaling of MOS (Metal oxide semiconductor) devices gives rise to drastic increase in leakage power dissipation, which overall increases the total power dissipation. This happens due to increase in short channel effects. FinFET device has the capability to reduce short channel effects, hence reduces power dissipation as well. In this paper short-gate FinFET (fin type field effect transistor) based Schmitt trigger using LCNT (Leakage Control NMOS transistor) technique is proposed using ASAP7 PDK (A 7nm FinFET Predictive process design kit) at 7nm technology node and comparative analysis is provided with the one without LCNT technique. The simulated results shows that FinFET based Schmitt trigger using LCNT technique reduces average power dissipation and power delay product (PDP) by 36.97% and 35.6%, respectively compared to one without FinFET LCNT technique. The reliability analysis using Monte Carlo approach at ±10% process, voltage and temperature (PVT) variation under 3 σ Gaussian distribution shows that LCNT FinFET Schmitt trigger provides better performance compared to FinFET Schmitt trigger at 7nm technology node.
{"title":"A Novel Energy Efficient and Process Immune Schmitt Trigger Circuit Design Using FinFET Technology","authors":"Umayia Mushtaqa, Md. Waseem Akrama, Dinesh Prasada, Bal Chand Nagarb","doi":"10.56042/ijpap.v60i5.61700","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.61700","url":null,"abstract":"Continuous scaling of MOS (Metal oxide semiconductor) devices gives rise to drastic increase in leakage power dissipation, which overall increases the total power dissipation. This happens due to increase in short channel effects. FinFET device has the capability to reduce short channel effects, hence reduces power dissipation as well. In this paper short-gate FinFET (fin type field effect transistor) based Schmitt trigger using LCNT (Leakage Control NMOS transistor) technique is proposed using ASAP7 PDK (A 7nm FinFET Predictive process design kit) at 7nm technology node and comparative analysis is provided with the one without LCNT technique. The simulated results shows that FinFET based Schmitt trigger using LCNT technique reduces average power dissipation and power delay product (PDP) by 36.97% and 35.6%, respectively compared to one without FinFET LCNT technique. The reliability analysis using Monte Carlo approach at ±10% process, voltage and temperature (PVT) variation under 3 σ Gaussian distribution shows that LCNT FinFET Schmitt trigger provides better performance compared to FinFET Schmitt trigger at 7nm technology node.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125600007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and drain conductance of the device has been derived and their variation over different field regions has been investigated. This work has also been extended to study the RF parameters like cut-off frequency and maximum operating frequency of the device. The threshold voltage of the device is also derived and studied in terms of the thickness of the doped AlGaN layer and mole fraction of AlGaN. The mathematical model presented here is calibrated with the experimentally available results reported earlier and a good agreement has been observed.
{"title":"A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance","authors":"Prabir Kumar Shita, Radha Raman Pala, Sutanu Duttab","doi":"10.56042/ijpap.v60i5.60815","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.60815","url":null,"abstract":"This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and drain conductance of the device has been derived and their variation over different field regions has been investigated. This work has also been extended to study the RF parameters like cut-off frequency and maximum operating frequency of the device. The threshold voltage of the device is also derived and studied in terms of the thickness of the doped AlGaN layer and mole fraction of AlGaN. The mathematical model presented here is calibrated with the experimentally available results reported earlier and a good agreement has been observed.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"57 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123459050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-28DOI: 10.56042/ijpap.v60i5.59238
{"title":"Efficient Green Phosphorescent Organic Light Emitting Diode using Iridium Complex","authors":"","doi":"10.56042/ijpap.v60i5.59238","DOIUrl":"https://doi.org/10.56042/ijpap.v60i5.59238","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130775023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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