Pub Date : 2021-07-07DOI: 10.9734/bpi/rtcams/v1/10368d
M. Zamzuri, M. Marina, Rabiah Ahmad, M. Salleh, C. C. Lee, Z. Nooraizedfiza, F. Mohamad, N. Hisyamudin, M. Izaki
Electrodeposited Cu2O/AZO photovoltaic (PV) devices are promising low-cost solar cells. In this research, both layers of Cu2O and AZO heterojunction architectures are studied as a function of AZO target-Cu2O substrate distance during the sputtering process. The Cu2O/AZO PV device has been constructed by electrodeposition of a -p-Cu2O layer on an Au (111)/Si wafer substrate followed by stacking the AZO layer using a sputtering technique. The Cu2O/AZO PV device showed a photovoltaic performance under AM1.5 illumination, and the performance changed depending on the target-substrate distance. It is shown that an increase in target-substrate distance during stacking the AZO layer by sputtering mitigated the damage at the Cu2O/AZO interface. As a result, we were able to improve the Voc and power conversion efficiency from 0.16 V and 0.46 % to 0.30 V and 0.64%, respectively.
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