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2023 Argentine Conference on Electronics (CAE)最新文献

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An FPGA RF PWM Modulator for ISM Bands 用于ISM波段的FPGA RF PWM调制器
Pub Date : 2023-03-09 DOI: 10.1109/CAE56623.2023.10086975
J. I. Morales, F. Chierchie, P. Mandolesi, E. Paolini
Two all-digital transmitter architectures with distortion-free pulse width modulation are presented in this work. The modulation achieves a clean spectrum free of spurious even when a low number of quantization levels are used, allowing their implementation using clock-based schemes on general purposes FPGAs. The influence of the oversampling on the performance is evaluated in terms of the adjacent channel power ratio (ACPR) for different values of time resolution. Values of ACPR1 and ACPR2 better than −45 dBc and −42 dBc, respectively, are achieved using only 11 resolution time steps in the binary signal and an oversampling ratio between the carrier and baseband signal frequencies of 64. The architectures are verified by FPGA implementations using 64-QAM modulated signal and carrier frequencies in two ISM bands (13.56 MHz and 40.68 MHz), utilizing less than 1% of the available resources.
本文提出了两种无失真脉宽调制的全数字发射机结构。即使在使用少量量化电平时,调制也可以实现无杂散的干净频谱,从而允许在通用fpga上使用基于时钟的方案实现。根据相邻信道功率比(ACPR)对不同时间分辨率值下过采样对性能的影响进行了评估。ACPR1和ACPR2分别优于- 45 dBc和- 42 dBc的值,只需要在二进制信号中使用11个分辨率时间步长,并且载波和基带信号频率之间的过采样比为64。采用64-QAM调制信号和两个ISM频段(13.56 MHz和40.68 MHz)的载波频率的FPGA实现验证了该架构,利用不到1%的可用资源。
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引用次数: 0
Integrated Three-Level Flying Capacitor DC-DC Buck Converter for CubeSat Applications 用于立方体卫星的集成三电平飞电容DC-DC降压变换器
Pub Date : 2023-03-09 DOI: 10.1109/CAE56623.2023.10087013
Jorge Marin, J. Gak, A. Cortés, Nicolás Calarco, A. Oliva, E. Lindstrom, M. Miguez, Alfredo Falcon, Niria Osterman, C. Rojas
In this work, the design, simulation and implementation of a DC-DC buck converter based on the Three-level Flying Capacitor Converter architecture for space applications, namely CubeSat systems, using the Skywater 130nm CMOS technology is presented. The power circuits are fully integrated on-chip, including the power MOSFETs and the gate drivers, to obtain an efficient and compact implementation. This versatile power electronics building block, is also a contribution to the open source IC design community. Additionally, tests structures for the flying capacitor and the output filter inductors are included to characterize the technology passive. The active area of the dual-core circuit (including power switches and drivers) occupies less than 1mm2 of silicon in this process. Simulated results shows a peak efficiency of 87% at 140mA load current for the single core converter, and a peak efficiency of 93.3% at 555mA load current for the dual-core converter, at 1MHz switching frequency. It also shows a 85% peak efficiency for full on-chip flying capacitor single-core implementation at 10MHz operation.
在这项工作中,提出了一种基于三电平飞电容变换器架构的DC-DC降压变换器的设计、仿真和实现,用于空间应用,即立方体卫星系统,采用Skywater 130纳米CMOS技术。功率电路完全集成在片上,包括功率mosfet和栅极驱动器,以获得高效和紧凑的实现。这个多功能的电力电子构建块,也是对开源IC设计界的贡献。此外,还包括飞行电容器和输出滤波电感器的测试结构,以表征该技术的无源性。在此工艺中,双核电路的有源区域(包括电源开关和驱动器)占用的硅小于1mm2。仿真结果表明,单芯变换器在140mA负载电流下的峰值效率为87%,双芯变换器在1MHz开关频率下,在555mA负载电流下的峰值效率为93.3%。它还显示,在10MHz操作下,全片上飞行电容器单核实现的峰值效率为85%。
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引用次数: 2
CAE 2023 Cover Page CAE 2023封面
Pub Date : 2023-03-09 DOI: 10.1109/cae56623.2023.10087009
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引用次数: 0
Nano-Ampere Area-Efficient Current Reference Based on Temperature-Controlled Pseudo-Resistor 基于温控伪电阻的纳米安培面积高效电流基准
Pub Date : 2023-03-09 DOI: 10.1109/CAE56623.2023.10087014
Italo Bruni, F. Olivera, A. Petraglia
This paper proposes a CMOS current reference circuit that avoids the use of huge area resistors. In order to achieve an independent-of-absolute-temperature (IOAT) current, proportional-to-absolute-temperature (PTAT) and complementary-to-absolute-temperature (CTAT) voltages are respectively applied to the drain and gate terminals of a n-MOS pseudo-resistor. The circuit was carried out using a 180 nm CMOS process. Extensive post-layout simulation results in Spectre show that the proposed topology presents a current consumption of 6.30 nA (typical), a temperature coefficient (TC) of 219 ppm/°C in a range from −40 to 120 °C, and a line regulation (LR) of 12.08 %. The proposed current reference occupies a silicon area of 0.0018 mm2.
本文提出了一种避免大面积电阻使用的CMOS电流基准电路。为了实现与绝对温度无关的电流,在n-MOS伪电阻的漏极和栅极两端分别施加比例-绝对温度和互补-绝对温度电压。该电路采用180nm CMOS工艺实现。Spectre中广泛的布局后仿真结果表明,所提出的拓扑具有6.30 nA(典型)的电流消耗,在- 40至120°C范围内的温度系数(TC)为219 ppm/°C,线路调节(LR)为12.08%。建议的电流参考占用0.0018 mm2的硅面积。
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引用次数: 0
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2023 Argentine Conference on Electronics (CAE)
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