A survey has been made of the properties of 1/8 W composite resistors made by the Matsushita Electric Ind. Co. Ltd. to determine whether they might be suitable as secondary thermometers in the low‐temperature region. From the measurements of resistance vs temperature, between 105 °C and 40 mK, it is confirmed that the grade ERC‐18SGJ resistors in various nominal room‐temperature resistance values from 20 to 510 Ω are suitable in very low ‐temperature work, and that resistors in the nominal resistance range 20–100 Ω are the most suitable for work down to several tens of mK. An advantage of Matsushita resistors as thermometers in the low‐temperature region is that they are available in 1/8 W size, and we can choose their nominal resistances from 10 Ω to several hundreds of ohms in steps of a few ohms. The magnetoresistance of Matsushita resistors having nominal resistances of 30 to 510 Ω has been measured in fields up to about 80 kG at temperatures between ∼4.2 and ∼1.5 K. It is shown that the percentage ch...
{"title":"Matsushita Carbon Resistors as Thermometers for Use at Low Temperatures and in High Fields(Physics)","authors":"S. Saito, Takashi Sato","doi":"10.1063/1.1134450","DOIUrl":"https://doi.org/10.1063/1.1134450","url":null,"abstract":"A survey has been made of the properties of 1/8 W composite resistors made by the Matsushita Electric Ind. Co. Ltd. to determine whether they might be suitable as secondary thermometers in the low‐temperature region. From the measurements of resistance vs temperature, between 105 °C and 40 mK, it is confirmed that the grade ERC‐18SGJ resistors in various nominal room‐temperature resistance values from 20 to 510 Ω are suitable in very low ‐temperature work, and that resistors in the nominal resistance range 20–100 Ω are the most suitable for work down to several tens of mK. An advantage of Matsushita resistors as thermometers in the low‐temperature region is that they are available in 1/8 W size, and we can choose their nominal resistances from 10 Ω to several hundreds of ohms in steps of a few ohms. The magnetoresistance of Matsushita resistors having nominal resistances of 30 to 510 Ω has been measured in fields up to about 80 kG at temperatures between ∼4.2 and ∼1.5 K. It is shown that the percentage ch...","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"46 1","pages":"359-360"},"PeriodicalIF":0.0,"publicationDate":"1975-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74718966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-08-01DOI: 10.1080/14786437508219967
M. Koiwa, T. Onozuka, M. Hirabayashi
Abstract The internal friction of cold-worked Cu-Al alloys is measured with an inverted torsion pendulum in the temperature range between − 180°C and + 100°C. Among 10 specimens with different contents of aluminium ranging from 0·01 to 2 at.%, distinct peaks are observed for the two compositions, 0·13 and 0·18 at. % Al, the peak height being larger for the former; detailed studies are made on 0·13 at. % Al specimens. The peak is introduced by plastic deformation and disappears on annealing at temperatures around + 150°C. For a specimen annealed in an oxidizing atmosphere prior to the final deformation, the peak is no longer observed. The peak is considered to be a combined effect of dislocations and aluminium atom-vacancy complexes.
{"title":"Internal Friction Peaks of Cold-Worked Dilute Copper-Aluminium Alloys(Metallurgy)","authors":"M. Koiwa, T. Onozuka, M. Hirabayashi","doi":"10.1080/14786437508219967","DOIUrl":"https://doi.org/10.1080/14786437508219967","url":null,"abstract":"Abstract The internal friction of cold-worked Cu-Al alloys is measured with an inverted torsion pendulum in the temperature range between − 180°C and + 100°C. Among 10 specimens with different contents of aluminium ranging from 0·01 to 2 at.%, distinct peaks are observed for the two compositions, 0·13 and 0·18 at. % Al, the peak height being larger for the former; detailed studies are made on 0·13 at. % Al specimens. The peak is introduced by plastic deformation and disappears on annealing at temperatures around + 150°C. For a specimen annealed in an oxidizing atmosphere prior to the final deformation, the peak is no longer observed. The peak is considered to be a combined effect of dislocations and aluminium atom-vacancy complexes.","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"2 1","pages":"370"},"PeriodicalIF":0.0,"publicationDate":"1975-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86003468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-07-01DOI: 10.1080/14786437508222811
K. Sumino, H. Shimizu
Abstract A geometrical consideration of the configuration of {111} tetrahedra in a bent crystal having the sphalerite structure shows that the type of bending is reversed between the primary slip plane and some of the secondary slip planes. This explains why the secondary slip is activated and the primary slip plane becomes forest-rich in β-bending. Two types of experiments establish the origin of the higher flow stress in β-bending compared with α-bending. It is concluded that the difference in the flow stress between the two types of bending in the deformation stage after the lower yield point originates mainly from the difference in the activity of the secondary slip system, while that in the early stage of deformation originates from the difference in the rate of increase in the density of screw dislocations due to the difference in the mobility between α-dislocations and β-dislocations moving on the primary slip plane.
{"title":"Polarity in Bending Deformation in InSb Crystals : II. Theory and Supplementary Experiments(Physics)","authors":"K. Sumino, H. Shimizu","doi":"10.1080/14786437508222811","DOIUrl":"https://doi.org/10.1080/14786437508222811","url":null,"abstract":"Abstract A geometrical consideration of the configuration of {111} tetrahedra in a bent crystal having the sphalerite structure shows that the type of bending is reversed between the primary slip plane and some of the secondary slip planes. This explains why the secondary slip is activated and the primary slip plane becomes forest-rich in β-bending. Two types of experiments establish the origin of the higher flow stress in β-bending compared with α-bending. It is concluded that the difference in the flow stress between the two types of bending in the deformation stage after the lower yield point originates mainly from the difference in the activity of the secondary slip system, while that in the early stage of deformation originates from the difference in the rate of increase in the density of screw dislocations due to the difference in the mobility between α-dislocations and β-dislocations moving on the primary slip plane.","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"26 1","pages":"354-355"},"PeriodicalIF":0.0,"publicationDate":"1975-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80047292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-07-01DOI: 10.1080/14786437508222810
H. Shimizu, K. Sumino
Deformation characteristics of InSb crystals subjected to α-bending or β-bending are observed as a function of the strain rate and the temperature. Difference in the characteristics between the two types of bending is demonstrated. Higher flow stresses are observed in β-bending as compared with α-bending. No difference is found between the two types of bending in the magnitudes of parameters which characterize the strain rate and the temperature sensitivities of the yield stresses. Observations on slip bands as well as those of dislocation etch-pits show that dislocations on the secondary slip system are activated in β-bending. It is suggested that this is the cause of the observed higher flow stresses. It is shown that the motion of screw dislocations of the primary slip system controls the deformation rate in both types of bending.
{"title":"Polarity in Bending Deformation of InSb Crystals : I. Experiments(Physics)","authors":"H. Shimizu, K. Sumino","doi":"10.1080/14786437508222810","DOIUrl":"https://doi.org/10.1080/14786437508222810","url":null,"abstract":"Deformation characteristics of InSb crystals subjected to α-bending or β-bending are observed as a function of the strain rate and the temperature. Difference in the characteristics between the two types of bending is demonstrated. Higher flow stresses are observed in β-bending as compared with α-bending. No difference is found between the two types of bending in the magnitudes of parameters which characterize the strain rate and the temperature sensitivities of the yield stresses. Observations on slip bands as well as those of dislocation etch-pits show that dislocations on the secondary slip system are activated in β-bending. It is suggested that this is the cause of the observed higher flow stresses. It is shown that the motion of screw dislocations of the primary slip system controls the deformation rate in both types of bending.","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"34 1","pages":"354"},"PeriodicalIF":0.0,"publicationDate":"1975-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81658041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-06-23DOI: 10.1103/PHYSREVLETT.34.1579
M. Tachiki, S. Maekawa, R. A. Treder, M. Levy
{"title":"Criterion for the Appearance of Critical Attenuation of Shear Waves in Magnetic Materials(Physics)","authors":"M. Tachiki, S. Maekawa, R. A. Treder, M. Levy","doi":"10.1103/PHYSREVLETT.34.1579","DOIUrl":"https://doi.org/10.1103/PHYSREVLETT.34.1579","url":null,"abstract":"","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"541 1","pages":"352"},"PeriodicalIF":0.0,"publicationDate":"1975-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80641122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The radiochemical behavior of americium in the coprecipitation process involving a precipitate such as lanthanum, thorium, and ceric fluorides, zirconium, and bismuth phosphates was investigated at the tracer concentrations of americium. All the precipitates except zirconium phosphate completely carried the Am(III), leaving the Am(VI) in the supernatant. The lanthanum and thorium fluorides carried portions of the Am(V) in proportion to the amounts of the metal ion of the carrier added under any given conditions. Then, the analytical conditions were established for determining the distributions of the oxidation states of americium.
{"title":"The Chemistry of Americium : III. The Coprecipitation of Am(III), Am(V), and Am(VI) by Some Fluorides and Phosphates(Chemistry)","authors":"M. Hara, Shin Suzuki","doi":"10.1246/BCSJ.48.1431","DOIUrl":"https://doi.org/10.1246/BCSJ.48.1431","url":null,"abstract":"The radiochemical behavior of americium in the coprecipitation process involving a precipitate such as lanthanum, thorium, and ceric fluorides, zirconium, and bismuth phosphates was investigated at the tracer concentrations of americium. All the precipitates except zirconium phosphate completely carried the Am(III), leaving the Am(VI) in the supernatant. The lanthanum and thorium fluorides carried portions of the Am(V) in proportion to the amounts of the metal ion of the carrier added under any given conditions. Then, the analytical conditions were established for determining the distributions of the oxidation states of americium.","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"7 1","pages":"365"},"PeriodicalIF":0.0,"publicationDate":"1975-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90328573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zeeman effect is studied for a narrow absorption line at 390.89 nm in CuCl crystal induced by a nitrogen laser excitation, the appearance of which was reported previously as a possible evidence for the Bose condensation of excitons. From the Zeeman splitting, it is concluded that this absorption corresponds to the formation of an exciton bound to a transiently generated neutral donor.
{"title":"Zeeman Effect of an Induced Absorption Line in Highly Excited CuCl(Physics)","authors":"T. Anzai, T. Goto, M. Ueta","doi":"10.1143/JPSJ.38.774","DOIUrl":"https://doi.org/10.1143/JPSJ.38.774","url":null,"abstract":"Zeeman effect is studied for a narrow absorption line at 390.89 nm in CuCl crystal induced by a nitrogen laser excitation, the appearance of which was reported previously as a possible evidence for the Bose condensation of excitons. From the Zeeman splitting, it is concluded that this absorption corresponds to the formation of an exciton bound to a transiently generated neutral donor.","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"91 1","pages":"359"},"PeriodicalIF":0.0,"publicationDate":"1975-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85030322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-01-01DOI: 10.2320/MATERTRANS1960.16.361
H. Kimura, R. Hasiguti
A general treatment to calculate the concentration of vacancy-solute atom pairs in a ternary dilute solid solution is presented. This treatment is applicable to a wide range of vacancy concentration relative to the concentration of one kind of solute atoms. The treatment is applied to explain the effect of tin addition on the rates of low temperature aging in Al-Cu alloys. The difference in the activation energy for aging between Al-Cu alloys and an Al-Cu-Sn alloy is analyzed to find the binding energy of a vacancy-tin atom pair to be about 0.3eV larger than that of a vacancy-copper atom pair. The experimental result that the retardation of aging due to tin addition is appreciable only for tin concentrations larger than the vacancy concentration is also explained satisfactorily.
{"title":"A General Treatment of the Distribution of Vacancies to Solute Atoms in a Ternary Solid Solution and its Application to Low Temperature Aging in Al-Cu-Sn Alloys(Metallurgy)","authors":"H. Kimura, R. Hasiguti","doi":"10.2320/MATERTRANS1960.16.361","DOIUrl":"https://doi.org/10.2320/MATERTRANS1960.16.361","url":null,"abstract":"A general treatment to calculate the concentration of vacancy-solute atom pairs in a ternary dilute solid solution is presented. This treatment is applicable to a wide range of vacancy concentration relative to the concentration of one kind of solute atoms. The treatment is applied to explain the effect of tin addition on the rates of low temperature aging in Al-Cu alloys. The difference in the activation energy for aging between Al-Cu alloys and an Al-Cu-Sn alloy is analyzed to find the binding energy of a vacancy-tin atom pair to be about 0.3eV larger than that of a vacancy-copper atom pair. The experimental result that the retardation of aging due to tin addition is appreciable only for tin concentrations larger than the vacancy concentration is also explained satisfactorily.","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"42 1","pages":"372"},"PeriodicalIF":0.0,"publicationDate":"1975-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87235932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-01-01DOI: 10.2320/MATERTRANS1960.16.297
Kenji Suzuki, M. Misawa, Y. Fukushima
The static structure factors of liquid gallium and rubidium were measured at several temperatures above their melting points using the time of flight neutron diffractometer installed on the 300MeV Tohoku University electron linac as a pulsed neutron source. The characteristic oscillation of the structure factor of liquid gallium in a high momentum transfer region has been shown to be well understood in terms of a diatomic molecule-like atomic association with the bond
{"title":"Structure of Liquid Gallium and Rubidium by Pulsed Neutron Diffraction Using Electron Linac(Physics)","authors":"Kenji Suzuki, M. Misawa, Y. Fukushima","doi":"10.2320/MATERTRANS1960.16.297","DOIUrl":"https://doi.org/10.2320/MATERTRANS1960.16.297","url":null,"abstract":"The static structure factors of liquid gallium and rubidium were measured at several temperatures above their melting points using the time of flight neutron diffractometer installed on the 300MeV Tohoku University electron linac as a pulsed neutron source. The characteristic oscillation of the structure factor of liquid gallium in a high momentum transfer region has been shown to be well understood in terms of a diatomic molecule-like atomic association with the bond","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"41 1","pages":"355"},"PeriodicalIF":0.0,"publicationDate":"1975-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78820681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-01-01DOI: 10.2320/MATERTRANS1960.16.453
S. Hanada, M. Mohri, O. Izumi
{"title":"Plasticity of β-brass Single Crystals at Low Temperatures(Metallurgy)","authors":"S. Hanada, M. Mohri, O. Izumi","doi":"10.2320/MATERTRANS1960.16.453","DOIUrl":"https://doi.org/10.2320/MATERTRANS1960.16.453","url":null,"abstract":"","PeriodicalId":21586,"journal":{"name":"Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy","volume":"24 1","pages":"370-371"},"PeriodicalIF":0.0,"publicationDate":"1975-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86730655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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