P. Chevalier, L. Koehler, E. Shim, B. Desiatov, A. Shams-Ansari, M. Piccardo, M. Lončar, M. Lipson, A. Gaeta, F. Capasso
Thanks to its high Kerr non-linearity and its low linear absorption, silicon is a material of choice for optical devices in the mid-infrared (from 3 to 5 microns) such as microresonators. In this wavelength range, the available optical sources such as quantum cascade lasers have a limited tunability. Tuning the refractive index of silicon can be achieved by a temperature change of the chip and has been previously demonstrated on ring resonators using integrated heaters or thermo-electric elements. We present a new method for thermo-optical tuning of silicon devices by directly using the light from a laser diode operating at 450 nm. The blue light focused on the silicon induces a local elevation of temperature and thus the refractive index locally increases. When applying this method on silicon ring resonator, the elevation of temperature leads to a decreasing free-spectral range and thus shift the resonances to lower frequencies. At 4.5 µm we measured a tuning efficiency of 200 MHz per mW of incident light. Numerical simulations of the thermo-optical effect show the locality of this tuning method, and confirm the experimental results. Finally a frequency study of the response of this method is performed and a time constant of the order of the micro-second is measured. In conclusion, we propose a fast, local, and non-invasive method for tuning silicon resonators operating in the mid-infrared that can be extended to any silicon-based device.
{"title":"Direct thermo-optical tuning of silicon photonic devices (Conference Presentation)","authors":"P. Chevalier, L. Koehler, E. Shim, B. Desiatov, A. Shams-Ansari, M. Piccardo, M. Lončar, M. Lipson, A. Gaeta, F. Capasso","doi":"10.1117/12.2510421","DOIUrl":"https://doi.org/10.1117/12.2510421","url":null,"abstract":"Thanks to its high Kerr non-linearity and its low linear absorption, silicon is a material of choice for optical devices in the mid-infrared (from 3 to 5 microns) such as microresonators. In this wavelength range, the available optical sources such as quantum cascade lasers have a limited tunability. Tuning the refractive index of silicon can be achieved by a temperature change of the chip and has been previously demonstrated on ring resonators using integrated heaters or thermo-electric elements. We present a new method for thermo-optical tuning of silicon devices by directly using the light from a laser diode operating at 450 nm. The blue light focused on the silicon induces a local elevation of temperature and thus the refractive index locally increases. When applying this method on silicon ring resonator, the elevation of temperature leads to a decreasing free-spectral range and thus shift the resonances to lower frequencies. At 4.5 µm we measured a tuning efficiency of 200 MHz per mW of incident light. Numerical simulations of the thermo-optical effect show the locality of this tuning method, and confirm the experimental results. Finally a frequency study of the response of this method is performed and a time constant of the order of the micro-second is measured. In conclusion, we propose a fast, local, and non-invasive method for tuning silicon resonators operating in the mid-infrared that can be extended to any silicon-based device.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90030240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. G. Wanguemert-Perez, A. Sánchez-Postigo, A. Hadij-ElHouati, J. Leuermann, C. Pérez-Armenta, J. Luque‐González, A. Ortega-Moñux, R. Halir, Í. Molina-Fernández, P. Cheben, Danxia Xu, J. Schmid, J. Čtyroký, J. Soler-Penadés, M. Nedeljkovic, G. Mashanovich
Silicon photonics is one of the most promising candidates to achieve lab-on-a-chip systems. Making use of the evanescent-field sensing principle, it is possible to determine the presence and concentration of substances by simply measuring the variation produced by the light-matter interaction in the real part of the mode effective index (in the near-infrared band), or in its imaginary part in a specific range of wavelengths (in the mid-infrared band). Regardless of which is the operating wavelength range, it is essential to select the proper sensing waveguide in order to maximize the device sensitivity. In this work we will review the potential of diffractionless subwavelength grating waveguides (SWG) for sensing applications by demonstrating their powerful capability to engineer the spatial distribution of the mode profile, and thereby to maximize the light-matter interaction. Among other things, we will demonstrate that the SWG waveguide dimensions used until now in the near-infrared are not optimal for sensing applications. In the mid-infrared band, due to the unacceptable losses of silicon dioxide for wavelengths longer than 4 μm, an additional effort is required to provide a more convenient platform for the development of future applications. In this regard, we will also show our recent progress in the development of a new platform, the suspended silicon waveguide with subwavelength metamaterial cladding. A complete set of elemental building blocks capable of covering the full transparency window of silicon (λ < ∼8.5 μm) will be discussed.
{"title":"Engineering sub-wavelength silicon waveguides for sensing applications in the near-infrared and mid-infrared band (Conference Presentation)","authors":"J. G. Wanguemert-Perez, A. Sánchez-Postigo, A. Hadij-ElHouati, J. Leuermann, C. Pérez-Armenta, J. Luque‐González, A. Ortega-Moñux, R. Halir, Í. Molina-Fernández, P. Cheben, Danxia Xu, J. Schmid, J. Čtyroký, J. Soler-Penadés, M. Nedeljkovic, G. Mashanovich","doi":"10.1117/12.2508749","DOIUrl":"https://doi.org/10.1117/12.2508749","url":null,"abstract":"Silicon photonics is one of the most promising candidates to achieve lab-on-a-chip systems. Making use of the evanescent-field sensing principle, it is possible to determine the presence and concentration of substances by simply measuring the variation produced by the light-matter interaction in the real part of the mode effective index (in the near-infrared band), or in its imaginary part in a specific range of wavelengths (in the mid-infrared band).\u0000Regardless of which is the operating wavelength range, it is essential to select the proper sensing waveguide in order to maximize the device sensitivity. In this work we will review the potential of diffractionless subwavelength grating waveguides (SWG) for sensing applications by demonstrating their powerful capability to engineer the spatial distribution of the mode profile, and thereby to maximize the light-matter interaction. Among other things, we will demonstrate that the SWG waveguide dimensions used until now in the near-infrared are not optimal for sensing applications.\u0000In the mid-infrared band, due to the unacceptable losses of silicon dioxide for wavelengths longer than 4 μm, an additional effort is required to provide a more convenient platform for the development of future applications. In this regard, we will also show our recent progress in the development of a new platform, the suspended silicon waveguide with subwavelength metamaterial cladding. A complete set of elemental building blocks capable of covering the full transparency window of silicon (λ < ∼8.5 μm) will be discussed.","PeriodicalId":21725,"journal":{"name":"Silicon Photonics XIV","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81419840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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