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Synthesis and Crystal and Electronic Structures of the Zintl Phase Sr21Cd4Sb18 辛特尔相 Sr21Cd4Sb18 的合成及其晶体和电子结构
Pub Date : 2023-11-17 DOI: 10.3390/solids4040022
Kowsik Ghosh, S. Bobev
Reported herein are the synthesis and crystal chemistry analysis of the Zintl phase Sr21Cd4Sb18. Single crystals of this compound were grown using the Sn-flux method, and structural characterization was carried out using single-crystal X-ray diffraction. Crystal data: Monoclinic space group C2/m (No. 12, Z = 4); a = 18.2536(6) Å, b = 17.4018(5) Å, and c = 17.8979(6) Å, β = 92.024(1)°. The structure is based on edge- and corner-shared CdSb4 tetrahedra, which ultimately form octameric [Cd8Sb22] fragments, where two symmetry-equivalent subunits are connected via a homoatomic Sb–Sb interaction. The electronic band structure calculations contained herein reveal the emergence of a direct gap between the valence and the conduction bands.
本文报告了 Zintl 相 Sr21Cd4Sb18 的合成和晶体化学分析。该化合物的单晶是用锡通量法生长出来的,并用单晶 X 射线衍射法进行了结构表征。晶体数据:单斜空间群 C2/m(12 号,Z = 4);a = 18.2536(6)埃,b = 17.4018(5)埃,c = 17.8979(6)埃,β = 92.024(1)°。该结构基于边角共享的 CdSb4 四面体,它们最终形成八聚体 [Cd8Sb22] 片段,其中两个对称等价的亚单位通过同原子 Sb-Sb 相互作用连接在一起。本文所包含的电子能带结构计算显示,价带和导带之间出现了直接间隙。
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引用次数: 0
Thermodynamic Properties as a Function of Temperature of AlMoNbV, NbTaTiV, NbTaTiZr, AlNbTaTiV, HfNbTaTiZr, and MoNbTaVW Refractory High-Entropy Alloys from First-Principles Calculations 基于第一性原理计算的AlMoNbV、NbTaTiV、NbTaTiZr、AlNbTaTiV、HfNbTaTiZr和MoNbTaVW难熔高熵合金的热力学性质与温度的关系
Pub Date : 2023-11-06 DOI: 10.3390/solids4040021
Danielsen E. Moreno, Chelsey Z. Hargather
Refractory high-entropy alloys (RHEAs) are strong candidates for use in high-temperature engineering applications. As such, the thermodynamic properties as a function of temperature for a variety of RHEA systems need to be studied. In the present work, thermodynamic quantities such as entropy, enthalpy, heat capacity at constant volume, and linear thermal expansion are calculated for three quaternary and three quinary single-phase, BCC RHEAs: AlMoNbV, NbTaTiV, NbTaTiZr, AlNbTaTiV, HfNbTaTiZr, and MoNbTaVW. First-principle calculations based on density functional theory are used for the calculations, and special quasirandom structures (SQSs) are used to represent the random solid solution nature of the RHEAs. A code for the finite temperature thermodynamic properties using the Debye-Grüneisen model is written and employed. For the first time, the finite temperature thermodynamic properties of all 24 atomic configuration permutations of a quaternary RHEA are calculated. At most, 1.7% difference is found between the resulting properties as a function of atomic configuration, indicating that the atomic configuration of the SQS has little effect on the calculated thermodynamic properties. The behavior of thermodynamic properties among the RHEAs studied is discussed based on valence electron concentration and atomic size. Among the quaternary RHEAs studied, namely AlMoNbV, NbTaTiZr, and NbTaTiV, it is found that the presence of Zr contributes to higher entropy. Additionally, at lower temperatures, Zr contributes to higher heat capacity and thermal expansion compared to the alloys without Zr, possibly due to its valence electron concentration. At higher temperatures, Al contributes to higher heat capacity and thermal expansion, possibly due its ductility. Among the quinary systems, the presence of Mo, W, and/or V causes the RHEA to have a lower thermal expansion than the other systems studied. Finally, when comparing the systems with the NbTaTi core, the addition of Al increases thermal expansion, while the removal of Zr lowers the thermal expansion.
耐火高熵合金(RHEAs)是高温工程应用的有力候选者。因此,需要研究各种RHEA系统的热力学性质作为温度的函数。在本工作中,计算了三种四元和三元五元单相BCC RHEAs: AlMoNbV、NbTaTiV、NbTaTiZr、AlNbTaTiV、HfNbTaTiZr和MoNbTaVW的熵、焓、定容热容和线性热膨胀等热力学量。计算采用基于密度泛函理论的第一性原理计算,并使用特殊的准随机结构(SQSs)来表示RHEAs的随机固溶体性质。编写并使用了debye - grisen模型的有限温度热力学性质代码。本文首次计算了四元RHEA所有24种原子构型排列的有限温度热力学性质。结果表明,原子构型对计算得到的SQS热力学性质影响不大,两者之间的差异最多为1.7%。基于价电子浓度和原子尺寸讨论了所研究的RHEAs的热力学性质。在所研究的四元RHEAs中,即AlMoNbV, NbTaTiZr和NbTaTiV,发现Zr的存在有助于提高熵。此外,在较低的温度下,与不含Zr的合金相比,Zr有助于更高的热容量和热膨胀,这可能是由于它的价电子浓度。在较高的温度下,可能由于其延展性,铝有助于更高的热容量和热膨胀。在五系中,Mo、W和/或V的存在导致RHEA的热膨胀比其他所研究的系统低。最后,与NbTaTi芯相比较,Al的加入增加了热膨胀,而Zr的去除降低了热膨胀。
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引用次数: 4
Energy-Gap-Refractive Index Relations in Semiconductors—Using Wemple–DiDomenico Model to Unify Moss, Ravindra, and Herve–Vandamme Relationships 半导体中的能隙-折射率关系——用wemle - didomenico模型统一Moss、Ravindra和Herve-Vandamme关系
Pub Date : 2023-11-01 DOI: 10.3390/solids4040020
Aneer Lamichhane
The refractive index of solids gauges their transparency to incident light, while the energy gap determines the threshold for light absorption. This paper provides a mathematical formulation for the relationship between the refractive index and the energy gap. It is also established that this formulation aided in the unification of the Moss, Ravindra, and Herve–Vandamme relationships.
固体的折射率衡量其对入射光的透明度,而能量间隙决定光吸收的阈值。本文给出了折射率与能隙关系的数学表达式。这一公式也有助于Moss、Ravindra和Herve-Vandamme关系的统一。
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引用次数: 1
Conversion of Hard to Soft Magnetic Ferrite Nanowires by Paramagnetic Shielding 软磁铁氧体纳米线的顺磁屏蔽转换
Pub Date : 2023-10-16 DOI: 10.3390/solids4040019
Xian-Lin Zeng, Indujan Sivanesarajah, Uwe Hartmann
In this study, we investigate the magnetization behavior of coaxial nanowires fabricated through the sol-gel electrospinning method. Our analysis uncovers a significant reduction in coercivity for CoFe2O4 nanowires when BaTiO3 is used as the shell material, effectively transforming them from hard to soft magnetic. This intriguing behavior is attributed to the magnetization reversal effect at the interface between ferromagnetic and paramagnetic regions, and it is also observed in NiFe2O4 and Fe2O3 nanowires. Surprisingly, introducing a GdBa2Cu3O7 shell induces a similar effect. Additionally, we employ magnetic impedance measurements on the coaxial nanowires, unveiling their potential for magnetic field sensing applications.
在本研究中,我们研究了溶胶-凝胶静电纺丝法制备的同轴纳米线的磁化行为。我们的分析发现,当使用BaTiO3作为外壳材料时,CoFe2O4纳米线的矫顽力显著降低,有效地将其从硬磁转变为软磁。这种有趣的行为归因于铁磁区和顺磁区交界面的磁化反转效应,并且在NiFe2O4和Fe2O3纳米线中也观察到。令人惊讶的是,引入GdBa2Cu3O7壳层也会产生类似的效果。此外,我们对同轴纳米线进行了磁阻抗测量,揭示了它们在磁场传感应用中的潜力。
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引用次数: 1
Elastic Stress Field beneath a Sticking Circular Contact under Tangential Load 切向载荷下粘性圆形触点下方的弹性应力场
Pub Date : 2023-10-05 DOI: 10.3390/solids5010002
Emanuel Willert
Based on a potential theoretical approach, the subsurface stress field is calculated for an elastic half-space which is subject to normal and uniaxial tangential surface tractions that—in the case of elastic decoupling—correspond to rigid normal and tangential translations of a circular surface domain. The stress fields are obtained explicitly and in closed form as the imaginary parts of compact complex-valued expressions. The stress state in the surface and on the central axis are considered in detail. As, within specific approximations that have been discussed at length in the literature, any tangential contact problem with friction can be understood as a certain incremental series of such rigid translations, the solutions presented here can serve as the basis of very fast superposition algorithms for the analysis of subsurface stress fields in general tangential contact problems with friction. This idea is demonstrated by means of the frictional tangential contact between an elastic half-space and a rigid cylindrical flat punch with rounded corners.
基于势理论方法,计算了弹性半空间的地下应力场,该空间受到法向和单轴切向表面牵引,在弹性解耦的情况下,这些牵引对应于圆形表面域的刚性法向和切向平移。应力场作为紧凑复值表达式的虚部以闭合形式明确获得。详细考虑了表面和中心轴上的应力状态。在文献详细讨论过的特定近似值范围内,任何有摩擦的切向接触问题都可以理解为此类刚性平移的增量序列,因此本文提出的解决方案可以作为分析有摩擦的一般切向接触问题中次表面应力场的快速叠加算法的基础。我们通过弹性半空间与带圆角的刚性圆柱形平面冲头之间的摩擦切向接触来证明这一观点。
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引用次数: 0
Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices 通过改变碳基应变层超晶格的层和界面厚度来评价声子特性
Pub Date : 2023-10-01 DOI: 10.3390/solids4040018
Devki N. Talwar, Piotr Becla
Systematic results of lattice dynamical calculations are reported as a function of m and n for the novel (SiC)m/(GeC)n superlattices (SLs) by exploiting a modified linear-chain model and a realistic rigid-ion model (RIM). A bond polarizability method is employed to simulate the Raman intensity profiles (RIPs) for both the ideal and graded (SiC)10-Δ/(Si0.5Ge0.5C)Δ/(GeC)10-Δ/(Si0.5Ge0.5C)Δ SLs. We have adopted a virtual-crystal approximation for describing the interfacial layer thickness, Δ (≡0, 1, 2, and 3 monolayers (MLs)) by selecting equal proportions of SiC and GeC layers. Systematic variation of Δ has initiated considerable upward (downward) shifts of GeC-(SiC)-like Raman peaks in the optical phonon frequency regions. Our simulated results of RIPs in SiC/GeC SLs are agreed reasonably well with the recent analyses of Raman scattering data on graded short-period GaN/AlN SLs. Maximum changes in the calculated optical phonons (up to ±~47 cm−1) with Δ = 3, are proven effective for causing accidental degeneracies and instigating localization of atomic displacements at the transition regions of the SLs. Strong Δ-dependent enhancement of Raman intensity features in SiC/GeC are considered valuable for validating the interfacial constituents in other technologically important heterostructures. By incorporating RIM, we have also studied the phonon dispersions [ωjSLq→] of (SiC)m/(GeC)n SLs along the growth [001] as well as in-plane [100], [110] directions [i.e., perpendicular to the growth]. In the acoustic mode regions, our results of ωjSLq→ have confirmed the formation of mini-gaps at the zone center and zone edges while providing strong evidences of the anti-crossing and phonon confinements. Besides examining the angular dependence of zone-center optical modes, the results of phonon folding, confinement, and anisotropic behavior in (SiC)m/(GeC)n are compared and contrasted very well with the recent first-principles calculations of (GaN)m/(AlN)n strained layer SLs.
利用改进的线性链模型和现实的刚性离子模型,报道了新型(SiC)m/(GeC)n超晶格(SLs)晶格动力学计算的系统结果,并将其作为m和n的函数。采用键极化率方法模拟了理想和分级(SiC)10-Δ/(Si0.5Ge0.5C)Δ/(GeC)10-Δ/(Si0.5Ge0.5C)Δ SLs的拉曼强度分布。我们通过选择等量的SiC和GeC层,采用了虚拟晶体近似来描述界面层厚度Δ(≡0,1,2和3单层(MLs))。Δ的系统变化引起了光学声子频率区域中类似GeC-(SiC)的拉曼峰的向上(向下)移动。我们在SiC/GeC SLs中对RIPs的模拟结果与最近对梯度短周期GaN/AlN SLs的拉曼散射数据的分析结果相当吻合。当Δ = 3时,所计算的光学声子的最大变化(可达±~47 cm−1)被证明能有效地引起偶发简并,并引起原子位移的局域化。SiC/GeC中拉曼强度特征的Δ-dependent增强被认为对验证其他技术上重要异质结构中的界面成分有价值。通过结合RIM,我们还研究了(SiC)m/(GeC)n SLs沿生长[001]以及面内[100],[110]方向(即垂直于生长方向)的声子色散[ωjSLq→]。在声模区,我们的ωjSLq→的结果证实了在区中心和区边缘形成的小间隙,同时提供了抗交叉和声子限制的有力证据。除了研究区中心光学模式的角依赖性外,还将(SiC)m/(GeC)n中的声子折叠、约束和各向异性行为的结果与最近(GaN)m/(AlN)n应变层SLs的第一性原理计算结果进行了比较和对比。
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引用次数: 0
A Theory of Dynamical Responses for Metal Films: Surface Roughness Effects 金属薄膜的动力响应理论:表面粗糙度效应
Pub Date : 2023-09-18 DOI: 10.3390/solids4030017
Sam Praill, Charlotte Lawton, Hasan Balable, Hai-Yao Deng
A generic expression is derived for the dynamical response function of metal films, with conductivity tensors as the only input. The semi-classical model is then used to provide an analytical expression for the conductivity tensor, thus establishing a kinetic theory for the response function. A major advantage of the theory is its ability to handle surface roughness effects through the use of the so-called specularity parameter. We applied the theory to study the properties of surface plasma waves. It is found that surface roughness does not affect the dispersion, but rather the decay rate of these waves. Furthermore, it significantly affects the spectral weight carried by the SPW resonances, which diminishes toward zero as the specularity parameter approaches unity.
导出了以电导率张量为唯一输入的金属薄膜动态响应函数的一般表达式。然后利用半经典模型给出了电导率张量的解析表达式,从而建立了响应函数的动力学理论。该理论的一个主要优点是它能够通过使用所谓的镜面参数来处理表面粗糙度效应。我们应用该理论研究了表面等离子体波的性质。发现表面粗糙度不影响色散,而是影响这些波的衰减率。此外,它会显著影响SPW共振所携带的谱权,当镜面参数接近于1时,该谱权向零减小。
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Solids
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