Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327459
S. Iezekiel
The state-of-the-art in lightwave network analysis is reviewed. Existing commercial instruments use simple architectures which limit the type of calibrations that are available for lightwave S-parameter measurements. However, recent research at The University of Leeds has demonstrated the feasibility of using reversible test sets and modular approaches, which offer the option of full two-port self calibration routines for the first time. Experimental results for the error-corrected S-parameter measurement of optical, optoelectronic and electro-optic two-ports are presented.
{"title":"Lightwave S-Parameter Measurement Techniques","authors":"S. Iezekiel","doi":"10.1109/ARFTG.2001.327459","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327459","url":null,"abstract":"The state-of-the-art in lightwave network analysis is reviewed. Existing commercial instruments use simple architectures which limit the type of calibrations that are available for lightwave S-parameter measurements. However, recent research at The University of Leeds has demonstrated the feasibility of using reversible test sets and modular approaches, which offer the option of full two-port self calibration routines for the first time. Experimental results for the error-corrected S-parameter measurement of optical, optoelectronic and electro-optic two-ports are presented.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124176158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327474
S. Vandenberghe, Dominique Schreurs, G. Carchon, B. Nauwelaers, W. Raedt
A robust line impedance identification method is presented. It determines the characteristic impedance of on-wafer TLR standards measured after an initial off-wafer LRM or TLR calibration. The only assumption made is that the obtained trans-wafer error boxes are a cascade of a symmetric probe related disturbance and a change in reference impedance. The proposed method yields an unbiased estimate of the complex characteristic impedance. Results from coplanar lines on a high resistivity silicon substrate support the made assumption.
{"title":"Characteristic Impedance Extraction Using Calibration Comparison","authors":"S. Vandenberghe, Dominique Schreurs, G. Carchon, B. Nauwelaers, W. Raedt","doi":"10.1109/ARFTG.2001.327474","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327474","url":null,"abstract":"A robust line impedance identification method is presented. It determines the characteristic impedance of on-wafer TLR standards measured after an initial off-wafer LRM or TLR calibration. The only assumption made is that the obtained trans-wafer error boxes are a cascade of a symmetric probe related disturbance and a change in reference impedance. The proposed method yields an unbiased estimate of the complex characteristic impedance. Results from coplanar lines on a high resistivity silicon substrate support the made assumption.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"739 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122949682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327472
J.-F.J. Nowakowski, B. Bonhoure, J. Carbonéro
The Bit Error Rate (BER) evaluation in one of the key parameters to reach QoS (Quality of Service) requirement of modern digital communication of the next generation (3 and 4G). This paper presents a new loopback BER Test (BERT) method based on measurements on baseband IQ outputs. The interest of this method is that it allows quantifying separately from digital stage, the RF stage influence on BER performances. This test principle has been validated introducing 4 instruments in the loop plus a GSM/DCS monochip as device under test. Unfortunately at the moment, one of the instruments capabilities limits the bit rate to one third of demodulation bandwidth, i.e. 200kHz. Replacing this instrument by a pure digital demodulator in the loop will eliminate this restriction in the future. So any kind of baseband IQ BERT could be performed using that method.
{"title":"A New Loopback GSM/DCS Bit Error Rate Test Method On Baseband I/Q Outputs","authors":"J.-F.J. Nowakowski, B. Bonhoure, J. Carbonéro","doi":"10.1109/ARFTG.2001.327472","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327472","url":null,"abstract":"The Bit Error Rate (BER) evaluation in one of the key parameters to reach QoS (Quality of Service) requirement of modern digital communication of the next generation (3 and 4G). This paper presents a new loopback BER Test (BERT) method based on measurements on baseband IQ outputs. The interest of this method is that it allows quantifying separately from digital stage, the RF stage influence on BER performances. This test principle has been validated introducing 4 instruments in the loop plus a GSM/DCS monochip as device under test. Unfortunately at the moment, one of the instruments capabilities limits the bit rate to one third of demodulation bandwidth, i.e. 200kHz. Replacing this instrument by a pure digital demodulator in the loop will eliminate this restriction in the future. So any kind of baseband IQ BERT could be performed using that method.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115009189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327456
Joseph D. King, Ben Biron
Non-Insertable Microwave fixtures used for testing packaged MMICs are often designed to transition from a coaxial environment at the signal source to either a microstrip or coplanar waveguide (CPW) transmission line at the Device Under Test (DUT). This transmission line becomes the interface between the automatic test equipment (ATE) and a lead of a packaged MMIC during electrical performance testing. Since the calibration reference plane is at the coaxial connector and not at the device under test, the measurements need to be corrected to compensate for the intervening structure. Because the network analyzer cannot be directly connected to the microstrip or CPW transmission line, it is difficult to directly measure the characteristics of this intervening structure. The task is further complicated by the need for a single set of calibration coefficients for a network analyzer that is to be used in a mixed connection environment. This paper presents one solution to the problem of directly and accurately characterizing the electrical performance of non-insertable MMIC test fixtures without using de-embedding procedures.
{"title":"Direct Characterization of Non-Insertable Microwave Test Fixtures for Packaged MMICs","authors":"Joseph D. King, Ben Biron","doi":"10.1109/ARFTG.2001.327456","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327456","url":null,"abstract":"Non-Insertable Microwave fixtures used for testing packaged MMICs are often designed to transition from a coaxial environment at the signal source to either a microstrip or coplanar waveguide (CPW) transmission line at the Device Under Test (DUT). This transmission line becomes the interface between the automatic test equipment (ATE) and a lead of a packaged MMIC during electrical performance testing. Since the calibration reference plane is at the coaxial connector and not at the device under test, the measurements need to be corrected to compensate for the intervening structure. Because the network analyzer cannot be directly connected to the microstrip or CPW transmission line, it is difficult to directly measure the characteristics of this intervening structure. The task is further complicated by the need for a single set of calibration coefficients for a network analyzer that is to be used in a mixed connection environment. This paper presents one solution to the problem of directly and accurately characterizing the electrical performance of non-insertable MMIC test fixtures without using de-embedding procedures.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134067021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327464
W. Woo, Lei Ding, J. Kenney, G. Zhou
A baseband-to-baseband test bed for characterization of RF power amplifiers and linearization algorithms is proposed. Using this system, algorithms for baseband pre-distortion may be tested in automated fashion, simulating the performance of a real-time DSP processor operating in conjunction with actual RF power amplifier circuits. Full characterization capability to 6 GHz, and up to 6 MHz of baseband bandwidth at 5X oversampling rate is available. The utility of the system is demonstrated with a GaAsFET power amplifier linearized for CDMA use at 1.9 GHz using a lookup table baseband model for amplitude and phase distortion extracted iteratively from oversampled baseband data.
{"title":"An RF/DSP Test Bed for Baseband Pre-Distortion of RF Power Amplifiers","authors":"W. Woo, Lei Ding, J. Kenney, G. Zhou","doi":"10.1109/ARFTG.2001.327464","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327464","url":null,"abstract":"A baseband-to-baseband test bed for characterization of RF power amplifiers and linearization algorithms is proposed. Using this system, algorithms for baseband pre-distortion may be tested in automated fashion, simulating the performance of a real-time DSP processor operating in conjunction with actual RF power amplifier circuits. Full characterization capability to 6 GHz, and up to 6 MHz of baseband bandwidth at 5X oversampling rate is available. The utility of the system is demonstrated with a GaAsFET power amplifier linearized for CDMA use at 1.9 GHz using a lookup table baseband model for amplitude and phase distortion extracted iteratively from oversampled baseband data.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"273 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116848306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327458
D. Kother, J. Berben, W. Poppelreuter, P. Waldow
The phase noise of VCOs (voltage controlled oscillators) is dertermining essentially the transmission properties of communication systems. Therefore, the measurement of these quantities is an important aspect already during the development and also later on for the characterization of the complete circuit. There are several concepts to measure phase noise, however, all principles have their advantages and disadvantages. For each application, the most suitable method has to be selected carefully. In this paper, the different methods are compared, measurement setups are shown, and exemplary results will be discussed.
{"title":"Optimum Phase Noise Measurements for Every Application","authors":"D. Kother, J. Berben, W. Poppelreuter, P. Waldow","doi":"10.1109/ARFTG.2001.327458","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327458","url":null,"abstract":"The phase noise of VCOs (voltage controlled oscillators) is dertermining essentially the transmission properties of communication systems. Therefore, the measurement of these quantities is an important aspect already during the development and also later on for the characterization of the complete circuit. There are several concepts to measure phase noise, however, all principles have their advantages and disadvantages. For each application, the most suitable method has to be selected carefully. In this paper, the different methods are compared, measurement setups are shown, and exemplary results will be discussed.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134366804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327468
D. Schreurs, E. Vandamme
In this work, we characterise for the first time a digital circuit, and more specifically an inverter, by means of vectorial large-signal measurements. The results give us a more complete picture of its behaviour at microwave frequencies, since parameters such as charging and discharging currents, peak currents, influence of the applied load, . . ., can now be visualised and evaluated directly. Moreover, device models aimed for digital circuit design can now be verified in detail under realistic digital operating conditions, whereas the classical validation by means of standard ring oscillator measurements only provides global information, such as delay and power dissipation. Finally, we also outline the importance of well incorporating the measurement environment (probe pads, biasing networks, . . .) when analysing measurement data of inverters at microwave frequencies.
{"title":"Use of Vectorial Large-Signal Measurements to Experimentally Evaluate Digital Circuits at Microwave Frequencies: Application to Inverters","authors":"D. Schreurs, E. Vandamme","doi":"10.1109/ARFTG.2001.327468","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327468","url":null,"abstract":"In this work, we characterise for the first time a digital circuit, and more specifically an inverter, by means of vectorial large-signal measurements. The results give us a more complete picture of its behaviour at microwave frequencies, since parameters such as charging and discharging currents, peak currents, influence of the applied load, . . ., can now be visualised and evaluated directly. Moreover, device models aimed for digital circuit design can now be verified in detail under realistic digital operating conditions, whereas the classical validation by means of standard ring oscillator measurements only provides global information, such as delay and power dissipation. Finally, we also outline the importance of well incorporating the measurement environment (probe pads, biasing networks, . . .) when analysing measurement data of inverters at microwave frequencies.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124826794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327467
D. Schreurs, S. Vandenberghe, J. Wood, N. Tufillaro, L. Barford, D. Root
We developed a systematic procedure to efficiently cover the (V1, V2) voltage plane of two-port microwave devices. The method is restricted to (quasi-)unilateral devices, because we assume that the V1(t) does not change when applying an additional a2 travelling voltage wave. By choosing the adequate magnitude and phase of this a2 signal, the V2 of interest can be constructed. We illustrate this method on a HEMT and show that, for the used experimental conditions, only 27 vectorial large-signal measurements are sufficient to cover the (V1, V2) operating region of the device. This is a significant reduction in the number of required measurements for non-linear model generation, in comparison to the classical approach based on multi-bias broadband S-parameter measurements.
{"title":"Automatically Controlled Coverage of the Voltage Plane of Quasi-Unilateral Devices","authors":"D. Schreurs, S. Vandenberghe, J. Wood, N. Tufillaro, L. Barford, D. Root","doi":"10.1109/ARFTG.2001.327467","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327467","url":null,"abstract":"We developed a systematic procedure to efficiently cover the (V1, V2) voltage plane of two-port microwave devices. The method is restricted to (quasi-)unilateral devices, because we assume that the V1(t) does not change when applying an additional a2 travelling voltage wave. By choosing the adequate magnitude and phase of this a2 signal, the V2 of interest can be constructed. We illustrate this method on a HEMT and show that, for the used experimental conditions, only 27 vectorial large-signal measurements are sufficient to cover the (V1, V2) operating region of the device. This is a significant reduction in the number of required measurements for non-linear model generation, in comparison to the classical approach based on multi-bias broadband S-parameter measurements.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122713494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327473
B. Stengel, Lei Zhao
Passive component implementations are undergoing a dramatic density increase with the application of multi-layer materials such as low temperature ceramic composites, high density flexible circuits, and imbedded circuits within PC boards. This has migrated into RF applications such as Blue Tooth wireless communications enabling small cost effective solutions pervasive in equipment such as laptop computers, cellular phones, printers, palm pilots, etc. With the increased passive component density comes a RF application testing difficulty that is complicated further by the need to include active devices or integrated circuit components with the passive monolith to complete the RF application. This paper describes an alternative to RF applications testing for multi-layer implementation where the material and process parameters are measured on a generic structure using mixed-mode four-port parameters. What results is a non-destructive probe test using off-the-shelf four-port vector network measurement and analysis equipment, for obtaining electrical parameters such as dielectric constant and loss tangent, screened metal conductivity and reactive value, and physical parameters such as dielectric thickness, conductor width, and layer alignment. With the measurement of material and process parameters the multi-layer wafer can be monitored during the manufacture process and prior to committing high cost integrated circuits and other components. A common test structure can be applied across a wide variety of RF applications with measurement frequency being defined by the application. What this means is the RF testing of high-density components such as LTCC become generic independent of the particular electrical function.
{"title":"Low Temperature Co-fired Ceramic LTCC Application Testing Alternative","authors":"B. Stengel, Lei Zhao","doi":"10.1109/ARFTG.2001.327473","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327473","url":null,"abstract":"Passive component implementations are undergoing a dramatic density increase with the application of multi-layer materials such as low temperature ceramic composites, high density flexible circuits, and imbedded circuits within PC boards. This has migrated into RF applications such as Blue Tooth wireless communications enabling small cost effective solutions pervasive in equipment such as laptop computers, cellular phones, printers, palm pilots, etc. With the increased passive component density comes a RF application testing difficulty that is complicated further by the need to include active devices or integrated circuit components with the passive monolith to complete the RF application. This paper describes an alternative to RF applications testing for multi-layer implementation where the material and process parameters are measured on a generic structure using mixed-mode four-port parameters. What results is a non-destructive probe test using off-the-shelf four-port vector network measurement and analysis equipment, for obtaining electrical parameters such as dielectric constant and loss tangent, screened metal conductivity and reactive value, and physical parameters such as dielectric thickness, conductor width, and layer alignment. With the measurement of material and process parameters the multi-layer wafer can be monitored during the manufacture process and prior to committing high cost integrated circuits and other components. A common test structure can be applied across a wide variety of RF applications with measurement frequency being defined by the application. What this means is the RF testing of high-density components such as LTCC become generic independent of the particular electrical function.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114665396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-05-01DOI: 10.1109/ARFTG.2001.327469
M. Weatherspoon, L. Dunleavy
Improved accuracy in one-port noise temperature measurements made with noise figure meters is demonstrated through use of radiometer principles. Equations for properly correcting for mismatch effects are interpreted for use with noise figure meters calibrated with diode noise sources. Results presented for a C-band solid-state cold noise source and a thermal hot noise source are shown to be substantially improved with the developed approach, and are in good agreement with radiometric measurements of the same sources.
{"title":"Enhanced One-Port Noise Temperature Measurements Using a Noise Figure Meter","authors":"M. Weatherspoon, L. Dunleavy","doi":"10.1109/ARFTG.2001.327469","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327469","url":null,"abstract":"Improved accuracy in one-port noise temperature measurements made with noise figure meters is demonstrated through use of radiometer principles. Equations for properly correcting for mismatch effects are interpreted for use with noise figure meters calibrated with diode noise sources. Results presented for a C-band solid-state cold noise source and a thermal hot noise source are shown to be substantially improved with the developed approach, and are in good agreement with radiometric measurements of the same sources.","PeriodicalId":248678,"journal":{"name":"57th ARFTG Conference Digest","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128837505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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