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High-Throughput RFIC Wafer Testing 高通量RFIC晶圆测试
Pub Date : 2001-05-01 DOI: 10.1109/ARFTG.2001.327454
E. Strid
This paper surveys the state of RFIC wafer testing as performed on production floors today, and the trends and expectations for the future. Currently, most RF chips sold as known-good die (KGD) and relatively complex RFICs are tested at-speed at the wafer level. RF wafer testing is used to reduce the cost of scrap at the next level of packaging, and various test strategies are pursued to reduce test costs. The hardware options and tradeoffs for production testing are surveyed. Finally, the outlook for test cost, ATE resources, chip connection density, and for emerging technologies such as built-in self-test, are discussed.
本文调查了目前在生产车间进行的RFIC晶圆测试的状态,以及未来的趋势和期望。目前,大多数射频芯片作为已知好的芯片(KGD)和相对复杂的射频芯片在晶圆级进行高速测试。RF晶圆测试用于降低下一级封装的报废成本,并采用各种测试策略来降低测试成本。对生产测试的硬件选择和权衡进行了调查。最后,讨论了测试成本、ATE资源、芯片连接密度以及内置自检等新兴技术的前景。
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引用次数: 5
Best Practice for On-Wafer Millimeter Wave Noise Figure Measurements 片上毫米波噪声图测量的最佳实践
Pub Date : 2001-05-01 DOI: 10.1109/ARFTG.2001.327455
Alberto Rodriguez, L. Dunleavy, P. Kirby
Equations are developed for convenient, but rigorous, corrections to on-wafer noise figure measurements based on the radiometer equation. The suitability of the approach for millimeter-wave measurements is demonstrated by presenting measured results for a W-Band (75-110GHz) MMIC low-noise amplifier (LNA). The measured quantities are vector-corrected to specified measurement planes by processing received noise temperatures (or noise power) and applying the developed equations to the measured system characteristics, such as probe S-parameters and noise source reflection coefficients. This technique provides a more rigorous treatment of the losses and mismatches present in a measurement system, yielding more accurate noise figure results compared to those obtained using scalar-corrected quantities. The results for the selected LNA show the noise figure to be on the order of 4 dB over 93-95 GHz, with an average discrepancy of 0.7 dB between noise figure corrections using only scalar loss information and the rigorous noise figure corrections based on vector S-parameter corrections presented here.
方程开发方便,但严格的,修正晶片上的噪声系数测量基于辐射计方程。通过对w波段(75-110GHz) MMIC低噪声放大器(LNA)的测量结果,证明了该方法对毫米波测量的适用性。通过处理接收到的噪声温度(或噪声功率),并将所开发的方程应用于测量的系统特性,如探头s参数和噪声源反射系数,将测量量矢量校正到指定的测量平面。该技术对测量系统中存在的损失和不匹配提供了更严格的处理,与使用标量校正量获得的结果相比,产生了更准确的噪声系数结果。所选LNA的结果显示,在93-95 GHz范围内噪声系数约为4 dB,仅使用标量损耗信息的噪声系数校正与基于矢量s参数校正的严格噪声系数校正之间的平均差异为0.7 dB。
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引用次数: 8
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57th ARFTG Conference Digest
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