Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349025
O. G. Memis, W. Wu, D. Dey, A. Katsnelson, H. Mohseni
We have designed a novel avalanche-free single photon detector for IR wavelengths above 1 μm. The detector shows high quantum efficiency and high gain. A detailed finite-element-method based three-dimensional simulation was developed to model and evaluate the nonlinear effects involved in the design.
{"title":"Detailed numerical modeling of a novel infrared single photon detector for λ ≫ 1 μm","authors":"O. G. Memis, W. Wu, D. Dey, A. Katsnelson, H. Mohseni","doi":"10.1109/NUSOD.2007.4349025","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349025","url":null,"abstract":"We have designed a novel avalanche-free single photon detector for IR wavelengths above 1 μm. The detector shows high quantum efficiency and high gain. A detailed finite-element-method based three-dimensional simulation was developed to model and evaluate the nonlinear effects involved in the design.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130502845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349042
P. Juodawlkis, J. Plant
We report simulation and experimental results to explore the fundamental trade-off between small-signal gain (G0) and saturation output power (P0,SAT) in semiconductor optical amplifiers having very small (< 1%) optical confinement factor Gamma. We demonstrate a high-power 1.5-mum InGaAsP slab-coupled optical waveguide amplifier (SCOWA) exhibiting G0 = 22.5 dB and P0,SAT = +28.8 dBm.
{"title":"Gain-Power Trade-Off in Low-Confinement Semiconductor Optical Amplifiers","authors":"P. Juodawlkis, J. Plant","doi":"10.1109/NUSOD.2007.4349042","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349042","url":null,"abstract":"We report simulation and experimental results to explore the fundamental trade-off between small-signal gain (G<sub>0</sub>) and saturation output power (P<sub>0,SAT</sub>) in semiconductor optical amplifiers having very small (< 1%) optical confinement factor Gamma. We demonstrate a high-power 1.5-mum InGaAsP slab-coupled optical waveguide amplifier (SCOWA) exhibiting G<sub>0</sub> = 22.5 dB and P<sub>0,SAT</sub> = +28.8 dBm.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124423197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349044
Y. Awaji, H. Furukawa, N. Wada
We present the designing method of EDFA to reduce transient response for optical packet on WDM environment. We adopted mid-GFF configuration to suppress the wavelength dependency taking increase of NF as a trade-off into account.
{"title":"Designing of EDFA with Inherently Low Transient Response for Optical Packet with Variable Condition of Traffic on WDM Environment","authors":"Y. Awaji, H. Furukawa, N. Wada","doi":"10.1109/NUSOD.2007.4349044","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349044","url":null,"abstract":"We present the designing method of EDFA to reduce transient response for optical packet on WDM environment. We adopted mid-GFF configuration to suppress the wavelength dependency taking increase of NF as a trade-off into account.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127547327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349024
K. Kim, Yingyan Huang, Boyang Liu, S. Ho
Simulation of detecting photoelectrons using FDTD method with an application to near-field subwavelength imaging based on nanoscale semiconductor photodetector array is reported. Spatial distributions for the electric field and photoelectron density have been obtained and the photocurrents from the photoelectrons have been calculated for the nanoscale photodetector array. The resolution of this novel device for subwavelenegth imaging can be achieved down to one tenth of the operating wavelength, which is comparable to commercial near-field scanning optical microscope.
{"title":"Simulation of Photodetection Using FDTD Method with Application to Near-Field Subwavelength Imaging Based on Nanoscale Semiconductor Photodetector Array","authors":"K. Kim, Yingyan Huang, Boyang Liu, S. Ho","doi":"10.1109/NUSOD.2007.4349024","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349024","url":null,"abstract":"Simulation of detecting photoelectrons using FDTD method with an application to near-field subwavelength imaging based on nanoscale semiconductor photodetector array is reported. Spatial distributions for the electric field and photoelectron density have been obtained and the photocurrents from the photoelectrons have been calculated for the nanoscale photodetector array. The resolution of this novel device for subwavelenegth imaging can be achieved down to one tenth of the operating wavelength, which is comparable to commercial near-field scanning optical microscope.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126705526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4348998
S. Snyder, S. Rotkin
In the frame of tight-binding theory, we investigate modulation of the optical properties of single-wall carbon nanotubes (SWNTs) helically wrapped with single-stranded DNA. We predict that certain wraps may qualitatively change the one-electron absorption spectrum for light polarized across the SWNT. Lifting of the optical selection rules is due to nanotube symmetry-breaking in the Coulomb potential of the ionized DNA backbone.
{"title":"DNA-Wrapped Carbon Nanotubes as Potential Optoelectronic Materials","authors":"S. Snyder, S. Rotkin","doi":"10.1109/NUSOD.2007.4348998","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4348998","url":null,"abstract":"In the frame of tight-binding theory, we investigate modulation of the optical properties of single-wall carbon nanotubes (SWNTs) helically wrapped with single-stranded DNA. We predict that certain wraps may qualitatively change the one-electron absorption spectrum for light polarized across the SWNT. Lifting of the optical selection rules is due to nanotube symmetry-breaking in the Coulomb potential of the ionized DNA backbone.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129057639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349033
H. Pan, Xin Wang, A. Beling, Hao Chen, J. Campbell
The operation and performance of 34-mum-diameter InGaAs/InP modified charge compensated unitraveling carrier photodiodes (CC MUTCs) are studied utilizing a commercial device simulator. The device has a high responsivity of 0.75 A/W and saturation current of 100 mA. Excellent agreement has been achieved between simulations and experiments. Parameters of the photodiode are further optimized to maximize the saturation current.
利用商用器件模拟器研究了34 μ m直径InGaAs/InP修饰电荷补偿单行载流子光电二极管(CC MUTCs)的工作和性能。该器件具有0.75 a /W的高响应率和100 mA的饱和电流。仿真结果与实验结果吻合良好。进一步优化光电二极管的参数，使饱和电流最大化。
{"title":"Characterization and Optimization of InGaAs/InP Photodiodes with High Saturation Current","authors":"H. Pan, Xin Wang, A. Beling, Hao Chen, J. Campbell","doi":"10.1109/NUSOD.2007.4349033","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349033","url":null,"abstract":"The operation and performance of 34-mum-diameter InGaAs/InP modified charge compensated unitraveling carrier photodiodes (CC MUTCs) are studied utilizing a commercial device simulator. The device has a high responsivity of 0.75 A/W and saturation current of 100 mA. Excellent agreement has been achieved between simulations and experiments. Parameters of the photodiode are further optimized to maximize the saturation current.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125470100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349045
D. K. Price, J. Humphrey, E. Kelmelis
We have employed modern graphics processor units (GPUs) for the acceleration of the well-known finite-difference time-domain (FDTD) method. Our implementation achieves speedups up to 40x traditional microprocessor-based solutions.
{"title":"Accelerated Simulators for Nano-Photonic Devices","authors":"D. K. Price, J. Humphrey, E. Kelmelis","doi":"10.1109/NUSOD.2007.4349045","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349045","url":null,"abstract":"We have employed modern graphics processor units (GPUs) for the acceleration of the well-known finite-difference time-domain (FDTD) method. Our implementation achieves speedups up to 40x traditional microprocessor-based solutions.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128410160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4348994
E. Schubert, J. Kim
The refractive index, a most fundamental quantity in optics and optoelectronics, determines many figures of merit of optical components such as reflectors, filters, and resonators. Here we present a new class of optical thin-film materials that have a very low refractive index. Specular films of high optical quality with refractive indices as low as 1.05 are demonstrated. Applications of the material in optoelectronics and solid-state lighting will also be discussed.
{"title":"Low-refractive-index materials: A new class of optical thin-film materials","authors":"E. Schubert, J. Kim","doi":"10.1109/NUSOD.2007.4348994","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4348994","url":null,"abstract":"The refractive index, a most fundamental quantity in optics and optoelectronics, determines many figures of merit of optical components such as reflectors, filters, and resonators. Here we present a new class of optical thin-film materials that have a very low refractive index. Specular films of high optical quality with refractive indices as low as 1.05 are demonstrated. Applications of the material in optoelectronics and solid-state lighting will also be discussed.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122796389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349013
J. Flickinger, X. Jin, E. Heller, L. Chen
We present Gallium arsenide (GaAs) Photodiode (PD) simulation using Rsoft LaserMOD. The detector responsivity from 600 to 900 nm and frequency response at 633 nm and 850 nm are calculated and analyzed. Our goal for this study is to develop a PD model from the material level, which can then be used with circuit simulators. To validate our model, we simulate at 850 nm first and compare to known performance at this wavelength. We use the PD data at 850 nm and extract its performance at 633 nm in order to use it in the 633 nm experiment.
{"title":"Gallium Arsenide Photodiode Simulation","authors":"J. Flickinger, X. Jin, E. Heller, L. Chen","doi":"10.1109/NUSOD.2007.4349013","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349013","url":null,"abstract":"We present Gallium arsenide (GaAs) Photodiode (PD) simulation using Rsoft LaserMOD. The detector responsivity from 600 to 900 nm and frequency response at 633 nm and 850 nm are calculated and analyzed. Our goal for this study is to develop a PD model from the material level, which can then be used with circuit simulators. To validate our model, we simulate at 850 nm first and compare to known performance at this wavelength. We use the PD data at 850 nm and extract its performance at 633 nm in order to use it in the 633 nm experiment.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126144182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349020
Hsueh‐Hua Chuang, J. Biard, J. Guenter, R. Johnson, G. Evans
A simple iterative model is developed for the analysis of the current distribution in multi-mode vertical cavity surface emitting lasers (VCSELs) using a SPICE-like approach. The model includes the measured sheet resistances as input parameters, drift-diffusion for lateral carrier transport, and a degeneracy correction for the above threshold condition. The effect of the resistance due to the oxide layer on performance is investigated. Higher sheet resistance under the oxide layer reduces the threshold current, but reduces the current range over which single transverse mode operation occurs. The voltage drop across the p-DBR region dominates spatial hole burning, which is moderated by lateral drift and diffusion of carriers. This simple iterative model is applied to commercially available oxide- confined VCSELs.
{"title":"A Simple Iterative Model for Oxide-Confined VCSELs","authors":"Hsueh‐Hua Chuang, J. Biard, J. Guenter, R. Johnson, G. Evans","doi":"10.1109/NUSOD.2007.4349020","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349020","url":null,"abstract":"A simple iterative model is developed for the analysis of the current distribution in multi-mode vertical cavity surface emitting lasers (VCSELs) using a SPICE-like approach. The model includes the measured sheet resistances as input parameters, drift-diffusion for lateral carrier transport, and a degeneracy correction for the above threshold condition. The effect of the resistance due to the oxide layer on performance is investigated. Higher sheet resistance under the oxide layer reduces the threshold current, but reduces the current range over which single transverse mode operation occurs. The voltage drop across the p-DBR region dominates spatial hole burning, which is moderated by lateral drift and diffusion of carriers. This simple iterative model is applied to commercially available oxide- confined VCSELs.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127058934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：