Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059473
Abdul Ali, J. Yun, H. Ng, D. Kissinger, F. Giannini, P. Colantonio
This paper presents the design of a single-ended power amplifier (PA) based on a 130-nm SiGe BiCMOS process with the $f_{max}$ of 500 GHz. The PA comprises of three stages, with each stage based on cascode topology. The design was optimized to obtain a peak gain of 30 dB with 3-dB bandwidth larger than D-band (110-170 GHz) and peak output power higher than 12 dBm. The simulation results show that the PA can provide average peak gain of 30 dB with 3-dB bandwidth of 90 GHz. In terms of large-signal, it provides output power and PAE larger than 12 dBm, and 5%, respectively, at 115-180 GHz. Moreover, it provides an output power greater than 10dBm at 105-200 GHz. The PA is highly suitable for the development of broadband sub- THz signal sources. The future work includes measurement of the PA.
{"title":"90 GHz Bandwidth Single-Ended PA for D-Band Applications in BiCMOS Technology","authors":"Abdul Ali, J. Yun, H. Ng, D. Kissinger, F. Giannini, P. Colantonio","doi":"10.1109/AMS48904.2020.9059473","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059473","url":null,"abstract":"This paper presents the design of a single-ended power amplifier (PA) based on a 130-nm SiGe BiCMOS process with the $f_{max}$ of 500 GHz. The PA comprises of three stages, with each stage based on cascode topology. The design was optimized to obtain a peak gain of 30 dB with 3-dB bandwidth larger than D-band (110-170 GHz) and peak output power higher than 12 dBm. The simulation results show that the PA can provide average peak gain of 30 dB with 3-dB bandwidth of 90 GHz. In terms of large-signal, it provides output power and PAE larger than 12 dBm, and 5%, respectively, at 115-180 GHz. Moreover, it provides an output power greater than 10dBm at 105-200 GHz. The PA is highly suitable for the development of broadband sub- THz signal sources. The future work includes measurement of the PA.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125077797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059531
V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich
In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.
本文介绍了一种采用WIN半导体最新推出的0.15 μm GaN HEMT工艺实现的39ghz功率放大器。还显示了4×100栅极宽度晶体管在39 GHz功率下的负载-拉力模拟。电磁仿真结果表明，该两级放大器在39 GHz时的功率增益为17 dB, PAE为21%，饱和输出功率为31 dBm。
{"title":"A 39 GHz Power Amplifier in 0.15 μm GaN","authors":"V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich","doi":"10.1109/AMS48904.2020.9059531","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059531","url":null,"abstract":"In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059312
F. Ahmed, M. Afzal, Touseef Hayatt, K. Esselle
Low-cost all-metal partially reflecting surface (AM PRS) based resonant-cavity antennas are presented in this paper. The AM PRSs are made by introducing square-shaped slots in a thin metallic sheet having moderate to high reflectivity ranging from −4.12 dB to −1.27 dB. An RCA designed using highly reflecting AM PRS has maximum directivity of 16.54 dBi and low 3dB directivity bandwidth of 9.17% whereas those designed using less reflective AM PRSs have high directivity bandwidth but smaller peak directivity within the operating band.
{"title":"Low-Cost All-Metal Resonant-Cavity Antenna for High Power Applications","authors":"F. Ahmed, M. Afzal, Touseef Hayatt, K. Esselle","doi":"10.1109/AMS48904.2020.9059312","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059312","url":null,"abstract":"Low-cost all-metal partially reflecting surface (AM PRS) based resonant-cavity antennas are presented in this paper. The AM PRSs are made by introducing square-shaped slots in a thin metallic sheet having moderate to high reflectivity ranging from −4.12 dB to −1.27 dB. An RCA designed using highly reflecting AM PRS has maximum directivity of 16.54 dBi and low 3dB directivity bandwidth of 9.17% whereas those designed using less reflective AM PRSs have high directivity bandwidth but smaller peak directivity within the operating band.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126928588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059412
Nethini T. Weerathunge, S. Chakraborty, S. Mahon, Benny Wu, M. Heimlich
A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.
{"title":"Design of 30-56.5 GHz Resistive Single-Ended Mixer in 0.15μm GaN/SiC Technology","authors":"Nethini T. Weerathunge, S. Chakraborty, S. Mahon, Benny Wu, M. Heimlich","doi":"10.1109/AMS48904.2020.9059412","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059412","url":null,"abstract":"A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132897170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059452
S. Malakooti, C. Fumeaux
In this paper, a design of a self-diplexing substrate integrated waveguide (SIW) antenna with independently tunable frequencies is proposed. This antenna design has two sets of varactor diodes tuning the effective length of a SIW cavity with three apertures, thereby adding resonance frequency tunability for the diplexing frequencies. Based on the measured results, the lower diplexing frequency varies from 2.64 GHz to 2.82 GHz with the measured maximum realized gain varying from 4.9 dBi to 5.6 dBi. The higher diplexing frequency varies from 3.15 GHz to 3.41 GHz with the measured maximum realized gain varying from 4.6 dBi to 5.5 dBi. The simulated antenna total efficiency in both diplexing bands is better than 60%.
{"title":"Frequency-Agile Self-Diplexing Antenna","authors":"S. Malakooti, C. Fumeaux","doi":"10.1109/AMS48904.2020.9059452","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059452","url":null,"abstract":"In this paper, a design of a self-diplexing substrate integrated waveguide (SIW) antenna with independently tunable frequencies is proposed. This antenna design has two sets of varactor diodes tuning the effective length of a SIW cavity with three apertures, thereby adding resonance frequency tunability for the diplexing frequencies. Based on the measured results, the lower diplexing frequency varies from 2.64 GHz to 2.82 GHz with the measured maximum realized gain varying from 4.9 dBi to 5.6 dBi. The higher diplexing frequency varies from 3.15 GHz to 3.41 GHz with the measured maximum realized gain varying from 4.6 dBi to 5.5 dBi. The simulated antenna total efficiency in both diplexing bands is better than 60%.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115220587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059422
Jaehyuk Lim, Seungjin Lee, Jaehoon Lee
In this paper, a novel layer shaping method to reduce far-end crosstalk (FEXT) noise in multiple microstrip lines was proposed. To reduce FEXT noise induced in adjacent microstrip lines, mushroom-shaped dielectric structure (MSDS) was created between the microstrip lines. The prototypes were fabricated using 3D printer to avoid increased complexity, and the effect of the proposed MSDS was verifiedfrom simulated and measured results.
{"title":"A Novel Layer Shaping Method to Reduce Far-End Crosstalk Noise in Microstrip Lines using 3D Printer","authors":"Jaehyuk Lim, Seungjin Lee, Jaehoon Lee","doi":"10.1109/AMS48904.2020.9059422","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059422","url":null,"abstract":"In this paper, a novel layer shaping method to reduce far-end crosstalk (FEXT) noise in multiple microstrip lines was proposed. To reduce FEXT noise induced in adjacent microstrip lines, mushroom-shaped dielectric structure (MSDS) was created between the microstrip lines. The prototypes were fabricated using 3D printer to avoid increased complexity, and the effect of the proposed MSDS was verifiedfrom simulated and measured results.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124493566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059525
László Szilágyi, Songhui Li, Xin Xu, P. V. Testa, M. Gunia, Andres Seidel, C. Carta, W. Finger, F. Ellinger
A divider circuit with selectable divide ratio, by 4 and 8, is designed in the 22 nm FD-SOI CMOS of GLOBALFOUNDRIES. Its application is in 77 GHz radar chirp generation, as pre-scaler from the voltage controlled oscillator (VCO) working at half frequency (37 to 41 GHz). A combination of extended true-phase single clock (ETSPC) and TSPC architecture is used for the divider cell. The pre-scaler realizes a singleended to differential signal conversion as well. Measurements are performed at supply voltages between 0.8 and 1.6 V. The divider can work between 10 and 64 GHz with sensitivities better than −30 dBm around the targeted frequency range of the VCO. DC power consumption is 2.2 mW for a single divider cell while the complete pre-scaler system needs 27 mW at 0.8 V supply.
{"title":"A Divide-by-4 and −8 Circuit for 77 GHz Radar in 22 nm FD-SOI CMOS","authors":"László Szilágyi, Songhui Li, Xin Xu, P. V. Testa, M. Gunia, Andres Seidel, C. Carta, W. Finger, F. Ellinger","doi":"10.1109/AMS48904.2020.9059525","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059525","url":null,"abstract":"A divider circuit with selectable divide ratio, by 4 and 8, is designed in the 22 nm FD-SOI CMOS of GLOBALFOUNDRIES. Its application is in 77 GHz radar chirp generation, as pre-scaler from the voltage controlled oscillator (VCO) working at half frequency (37 to 41 GHz). A combination of extended true-phase single clock (ETSPC) and TSPC architecture is used for the divider cell. The pre-scaler realizes a singleended to differential signal conversion as well. Measurements are performed at supply voltages between 0.8 and 1.6 V. The divider can work between 10 and 64 GHz with sensitivities better than −30 dBm around the targeted frequency range of the VCO. DC power consumption is 2.2 mW for a single divider cell while the complete pre-scaler system needs 27 mW at 0.8 V supply.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129449693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059445
Michael Smith, D. Enchelmaier, A. Robinson
Traditional microwave circuits that make use of high performance suspended substrate stripline (SSS) filters require great care to be taken to ensure that a low loss transition between transmission lines and the filters is achieved. This poses both a manufacturing and tuning challenge. Here we present a design that combats this issue by integrating multiple SSS filters into the same printed circuit board (PCB) as the rest of the radio frequency (RF) system.
{"title":"Suspended Substrate Stripline Filters Integrated into a Mixed Analog-Digital and Radio-Frequency Stack","authors":"Michael Smith, D. Enchelmaier, A. Robinson","doi":"10.1109/AMS48904.2020.9059445","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059445","url":null,"abstract":"Traditional microwave circuits that make use of high performance suspended substrate stripline (SSS) filters require great care to be taken to ensure that a low loss transition between transmission lines and the filters is achieved. This poses both a manufacturing and tuning challenge. Here we present a design that combats this issue by integrating multiple SSS filters into the same printed circuit board (PCB) as the rest of the radio frequency (RF) system.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122267836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059513
M. Forouzandeh, N. Karmakar
A frequency-domain chipless radio frequency identification reader for the interrogation of polarizer chipless tags is introduced. A reader operating within 4.6-5.6 GHz frequency band is constructed to read the ID of 4-bit polarizer tags.
{"title":"Low-cost Chipless RFID Reader for Polarizer Tags","authors":"M. Forouzandeh, N. Karmakar","doi":"10.1109/AMS48904.2020.9059513","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059513","url":null,"abstract":"A frequency-domain chipless radio frequency identification reader for the interrogation of polarizer chipless tags is introduced. A reader operating within 4.6-5.6 GHz frequency band is constructed to read the ID of 4-bit polarizer tags.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125526293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.1109/AMS48904.2020.9059370
P. Lawson, J. Godfrey, A. Lavrenko
Harmonic tags are passive radio transponders that create a harmonic return when illuminated with an RF signal. They are used to reduce the effect of clutter for otherwise indistinguishable targets. A classic harmonic tag consists of a dipole antenna, a Schottky diode and an inductive loop. In this work, we evaluate the performance of an off-centre fed dipole in harmonic tags and show that along with improved power conversion efficiency it yields a directional radiation pattern which could be detrimental in certain applications.
{"title":"Evaluation of an Off-Centre Fed Dipole Antenna in Passive Harmonic Radar Tags","authors":"P. Lawson, J. Godfrey, A. Lavrenko","doi":"10.1109/AMS48904.2020.9059370","DOIUrl":"https://doi.org/10.1109/AMS48904.2020.9059370","url":null,"abstract":"Harmonic tags are passive radio transponders that create a harmonic return when illuminated with an RF signal. They are used to reduce the effect of clutter for otherwise indistinguishable targets. A classic harmonic tag consists of a dipole antenna, a Schottky diode and an inductive loop. In this work, we evaluate the performance of an off-centre fed dipole in harmonic tags and show that along with improved power conversion efficiency it yields a directional radiation pattern which could be detrimental in certain applications.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121436828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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