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The ASTM Computer Program for Chemical Thermodynamic and Energy Release Evaluation - Chetah® Version 11.0最新文献

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Chapter 1 Introduction 第一章引言
D. Edgell, Maria DelMastro Allen, Ginger Smith, Jason R. Swanson
Polysilicon TFT is the key building block for active matrix liquid crystal display (AMLCD) and active matrix organic light emitting diode (AMOLED) due to its faster switching characteristics and high driving current. Its fabrication is similar to the conventional MOSFET process flow and the most difference is the processing temperature. The maximum temperature limited in MOSFETs is about the silicon melting-point, and the temperature in polysilicon TFT fabrication should be less than 600-650 C, due to the commercial considerations that we can processing all fabrications on the cheaper substrate materials such as the glass or the plastic. Low-temperature-polysilicon technology is developed for this reason.
多晶硅TFT由于其更快的开关特性和高驱动电流,是有源矩阵液晶显示器(AMLCD)和有源矩阵有机发光二极管(AMOLED)的关键组成部分。其制造过程与传统的MOSFET工艺流程相似,最大的区别是加工温度。mosfet的最高温度限制是硅的熔点,多晶硅TFT制造的温度应低于600-650℃,因为出于商业考虑,我们可以在更便宜的衬底材料(如玻璃或塑料)上加工所有制造。低温多晶硅技术就是为此而发展起来的。
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The ASTM Computer Program for Chemical Thermodynamic and Energy Release Evaluation - Chetah® Version 11.0
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