{"title":"Generation Of A 32 GHz Optical Pulse Train Using Frequency Quadrupling in a Mode-Locked Fibre Ring Laser","authors":"K. Gupta, D. Novak","doi":"10.1109/MWP.1997.740251","DOIUrl":"https://doi.org/10.1109/MWP.1997.740251","url":null,"abstract":"","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124901759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photonic Microwave Signal Processing","authors":"K. Williams, J. L. Dexter, R. Esman","doi":"10.1109/MWP.1997.740258","DOIUrl":"https://doi.org/10.1109/MWP.1997.740258","url":null,"abstract":"","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122803739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Wessel, A. Greiner, W. Qiu, H. Suche, W. Sohler
{"title":"Diode Pumped And Packaged 10GHz Harmonically Modelocked TiEr:LiNbO/sub 3/-Waveguide Laser for Soliton Transmission","authors":"R. Wessel, A. Greiner, W. Qiu, H. Suche, W. Sohler","doi":"10.1109/MWP.1997.740228","DOIUrl":"https://doi.org/10.1109/MWP.1997.740228","url":null,"abstract":"","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122879912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Further Observations On The Optical Generation Of Millimetre-wave Signals By Master/slave Laser Sideband Injection Locking","authors":"D. George, N. Gomes, P. Davies, D. Wake","doi":"10.1109/MWP.1997.740287","DOIUrl":"https://doi.org/10.1109/MWP.1997.740287","url":null,"abstract":"","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132735022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Performance Evaluation Of M-QAM Fiber-Optic Links in the Presence of the External Modulator Bias Fluctuations","authors":"M. Shadaram, A. Mody, B. Usevitch, D. Lafaw","doi":"10.1109/MWP.1997.740244","DOIUrl":"https://doi.org/10.1109/MWP.1997.740244","url":null,"abstract":"","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115815564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Ziegler, G. Jennemann, M. Aziz, S. Uhl, Ingo Fischer, F. Lach, J. Weber, W. Elsasser
We report on modelocking behaviour for Merent multisegment lasers grown by SAG-technology. Pulse widths of about 15ps are achieved for active loss modulation. Theoretical investigations with a 'I'LL-model show good correspondence with the experimental results. 1. IN'TRODUCTION Recently much effort has been made to integmte multisegment semiconductor lasers in order to achieve compact, mechanically stable, and high performance devices for high-speed optical communication systems.'-5 Therefore, several technologies have been developed for the fabrication of longitudinal structures consisting of materials with two or even more different bandgaps, which is necessary for an integrated activdpassive coupled cavity modelocked laser with an integrated motidator. In this paper we present experimental results of the modelocking behaviour of different multisegment laser structures grown by selective area growth (SAG) epitaxy. Finally, theoretical investigations based on the transmission line laser model (TLLM)"' which are in strong coincidence with our experimental results have been performed. 2. LASER STRUCTURE AND EXPERIMENTAL SET-UP The multisegment lasers are grown by selective area growth technology using LP-MOVPE. In a single epitaxial growth step various numbers of MQW waveguides with Werent bandgaps can be realized. Measured peak wavelengths of the photoluminescence spectra show that, between the areas forming the passive waveguide and the Bragg sections (at a wavelength of 1440nm) imd the areas of the modulation sections and the gain sections, large wavelength shifts of 80nm and 118nm are iuAieved respectively.' Typical threshold currents are 30mA to 8OmA depending on the laser structure. A more detailed description of the struictures, the growth system and procedures can be found else~here.~.' DiEerent multisegment lasers have been realized for our modelocking experiments, which will be described in the following. The gain section of the laser is driven with a constant current, and a sinusoidal voltage (modulation power approx. 25dBm) is superimposed onto a reverse lbias to the intra-cavity electroabsorption modulator section. In order to get short modelocked output pulses, the modulation fiequency of approx. lOGHz must precisely correspond to the round trip resonance frequency of the laser cavity (length of the laser is approx. 4.2"). The passive waveguides can be used to adjust the modelocking frequency and to reduce the total current. The first order gating of the DBR segment allows the selection of the operation wavelength and narrows the emission to a small spectral width. The optical output of the laser is coupled into a lensed single mode fiber. The pulse width is determined by a fast PIN-photodiode (bandwidth approx. 5OGHz) and recorded with a 5OGHz sampling oscilloscope or by an intensity autocorrelator. The use of an optical spectrum analyzer yields information on the spectral properties of the optical output. The complete experimental s
本文报道了用sagg技术制备的mement多段激光器的模型锁定行为。对于有源损耗调制，脉冲宽度约为15ps。用I' l -模型进行的理论研究与实验结果吻合良好。1. 近年来，为了实现高速光通信系统的紧凑、机械稳定和高性能的器件，人们在集成多段半导体激光器方面做了很多努力。'-5因此，已经开发了几种技术，用于制造具有两种甚至更多不同带隙的材料组成的纵向结构，这对于具有集成动机的集成活化-被动耦合腔模型锁定激光器是必要的。本文给出了用选择性面积生长(SAG)外延生长的不同多段激光结构的模型锁定行为的实验结果。最后，基于传输线激光模型(TLLM)进行了理论研究。这与我们的实验结果非常吻合。2. 采用LP-MOVPE选择性区域生长技术制备了多段激光器。在一个外延生长步骤中，可以实现不同数量的无带隙的MQW波导。光致发光光谱的峰值波长测量表明，在形成无源波导的区域和Bragg部分(波长为1440nm)之间，即调制部分和增益部分，分别实现了80nm和118nm的大波长偏移。根据激光结构的不同，典型的阈值电流为30mA至8OmA。关于结构、生长系统和过程的更详细的描述可以在这里找到。不同的多段激光器已经实现了我们的模型锁定实验，这将在下面描述。激光器的增益部分由恒定电流驱动，正弦电压(调制功率约为。25dBm)叠加到腔内电吸收调制器部分的反向偏置上。为了得到短的锁模输出脉冲，调制频率约为。lOGHz必须精确对应于激光腔的往返共振频率(激光的长度约为。4.2”)。无源波导可用于调节锁模频率和减小总电流。DBR段的一阶门控允许选择工作波长并将发射窄至较小的光谱宽度。激光器的光输出被耦合到一个透镜单模光纤中。脉冲宽度由快速pin -光电二极管决定(带宽约为。5OGHz)，用5OGHz采样示波器或强度自相关器记录。使用光谱分析仪可获得有关光输出的光谱特性的信息。四段激光器(br无源波导有源节调制器)的完整实验装置如图1所示。二、广告费。图2:强度与损耗调制器反向电压的关系。插图显示了相应的激光结构。或
{"title":"Modelocking Of Multisegment Semiconductor Lasers At A Repetition Frequency of 10 GHz for high-speed optical communication systems","authors":"M. Ziegler, G. Jennemann, M. Aziz, S. Uhl, Ingo Fischer, F. Lach, J. Weber, W. Elsasser","doi":"10.1109/MWP.1997.740249","DOIUrl":"https://doi.org/10.1109/MWP.1997.740249","url":null,"abstract":"We report on modelocking behaviour for Merent multisegment lasers grown by SAG-technology. Pulse widths of about 15ps are achieved for active loss modulation. Theoretical investigations with a 'I'LL-model show good correspondence with the experimental results. 1. IN'TRODUCTION Recently much effort has been made to integmte multisegment semiconductor lasers in order to achieve compact, mechanically stable, and high performance devices for high-speed optical communication systems.'-5 Therefore, several technologies have been developed for the fabrication of longitudinal structures consisting of materials with two or even more different bandgaps, which is necessary for an integrated activdpassive coupled cavity modelocked laser with an integrated motidator. In this paper we present experimental results of the modelocking behaviour of different multisegment laser structures grown by selective area growth (SAG) epitaxy. Finally, theoretical investigations based on the transmission line laser model (TLLM)\"' which are in strong coincidence with our experimental results have been performed. 2. LASER STRUCTURE AND EXPERIMENTAL SET-UP The multisegment lasers are grown by selective area growth technology using LP-MOVPE. In a single epitaxial growth step various numbers of MQW waveguides with Werent bandgaps can be realized. Measured peak wavelengths of the photoluminescence spectra show that, between the areas forming the passive waveguide and the Bragg sections (at a wavelength of 1440nm) imd the areas of the modulation sections and the gain sections, large wavelength shifts of 80nm and 118nm are iuAieved respectively.' Typical threshold currents are 30mA to 8OmA depending on the laser structure. A more detailed description of the struictures, the growth system and procedures can be found else~here.~.' DiEerent multisegment lasers have been realized for our modelocking experiments, which will be described in the following. The gain section of the laser is driven with a constant current, and a sinusoidal voltage (modulation power approx. 25dBm) is superimposed onto a reverse lbias to the intra-cavity electroabsorption modulator section. In order to get short modelocked output pulses, the modulation fiequency of approx. lOGHz must precisely correspond to the round trip resonance frequency of the laser cavity (length of the laser is approx. 4.2\"). The passive waveguides can be used to adjust the modelocking frequency and to reduce the total current. The first order gating of the DBR segment allows the selection of the operation wavelength and narrows the emission to a small spectral width. The optical output of the laser is coupled into a lensed single mode fiber. The pulse width is determined by a fast PIN-photodiode (bandwidth approx. 5OGHz) and recorded with a 5OGHz sampling oscilloscope or by an intensity autocorrelator. The use of an optical spectrum analyzer yields information on the spectral properties of the optical output. The complete experimental s","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123710922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Bach, R. Bertenburg, H. Bulow, G. Jacumeit, G. Mekonnen, A. Umbach, G. Unterborsch, G. Veith, S. van Waasen
A monolithic InP-based photoreceiver for h = 1.55 pm is presented. Its opto-electronic conversion capabilities for 40 Gbit/s RZand NRZ-modulated PRBS data streams are demonstrated. Introduction and Overview Advanced TDM transmission systems operate at bit rates up to 40 Gbit/s to manage increasing . traffic on fibre-based communication networks. Although non-return to zero (NRZ) coding is widely applied [I], return to zero (RZ) modulation promises advantages with respect to achievable transmission length along standard fibers compared to the NRZ format [2]. In either case ultra-broadband frontends are needed €or opto-electronic ((YE) signal conversion. A monolithic InP-based opto-electronic receiver (Rx) is presented, which substitutes a commercially available photodiode in a 40 Gbit/s detection experiment on the way to a 40 Gbit/s OEIC technology. The receiver OEIC comprises a waveguide-integrated photodiode and a travelling wave amplifier (TWA) providing additional signal amplification. Its O E power transfer h c t i o n is demonstrated to cover properly the spectral range of a 40 Gbit/s NFZ data stream. In an 40 Gbit/s detection experiment, applying an optical TDM (OTDM) PRBS RZ modulated source, the direct detection of the received 40 Gbit/s pulse sequence by the InP-based photoreceiver is demonstrated. The design of the complete receiver module is described as well as its signal conversion properties for 40 Gbit/s TDM applications. Opto-Electronic Receiver Design for fast TDM Systems For TDM transmission systems, which support the SDH standard, an opto-electronic receiver has to fulfill several requirements in order to guarantee a well opened eye pattern at its output. Photoreceivers are needed which exhibit a flat gain characteristics down to some 10 kHz to ensure the transmission of the frame synchronisation of the synchronous transport modules (STM-1,4, 16, 64 ...). The components of a photoreceiver (photodiode and amplifier stage) should provide both a good power linearity as well as flat conversion properties within the frequency span of the bit rate. Furthermore a group delay time scatter less than 1+151 % of the bit period and an output reflexion factor less than -10 dB over the full bandwidth is desirable [3]. The polarisation sensitivity should not exceed I_+ 1/ dB, e.g., to compensate for the loss of pofarisation orientation in standard fibers and to allow for some pol.arization scrambling of stringed bits in optical multiplexing experiments. Monolithic Photoreceiver The photoreceiver OEIC comprises a photodiode with integrated optical waveguide [4] and a HEMT based travelling wave amplifier, both monolithically integrated on semi-insulating InP substrate [SI. The layer stack of the evanescent field coupled GaInAs pin-photodiode is optimized to achieve an internal quantum efficiency of about 85 % for photodiodes with a size of 5 20 pm'. The transit-time limited electrical 3 -dB bandwidth amounts to 35 GHz. Optical measurements show
{"title":"Ultra-broadband InP-based Photoreceiver With Integrated Travelling Wave Amplifier For 40 Gbit/s Detection","authors":"H. Bach, R. Bertenburg, H. Bulow, G. Jacumeit, G. Mekonnen, A. Umbach, G. Unterborsch, G. Veith, S. van Waasen","doi":"10.1109/MWP.1997.740241","DOIUrl":"https://doi.org/10.1109/MWP.1997.740241","url":null,"abstract":"A monolithic InP-based photoreceiver for h = 1.55 pm is presented. Its opto-electronic conversion capabilities for 40 Gbit/s RZand NRZ-modulated PRBS data streams are demonstrated. Introduction and Overview Advanced TDM transmission systems operate at bit rates up to 40 Gbit/s to manage increasing . traffic on fibre-based communication networks. Although non-return to zero (NRZ) coding is widely applied [I], return to zero (RZ) modulation promises advantages with respect to achievable transmission length along standard fibers compared to the NRZ format [2]. In either case ultra-broadband frontends are needed €or opto-electronic ((YE) signal conversion. A monolithic InP-based opto-electronic receiver (Rx) is presented, which substitutes a commercially available photodiode in a 40 Gbit/s detection experiment on the way to a 40 Gbit/s OEIC technology. The receiver OEIC comprises a waveguide-integrated photodiode and a travelling wave amplifier (TWA) providing additional signal amplification. Its O E power transfer h c t i o n is demonstrated to cover properly the spectral range of a 40 Gbit/s NFZ data stream. In an 40 Gbit/s detection experiment, applying an optical TDM (OTDM) PRBS RZ modulated source, the direct detection of the received 40 Gbit/s pulse sequence by the InP-based photoreceiver is demonstrated. The design of the complete receiver module is described as well as its signal conversion properties for 40 Gbit/s TDM applications. Opto-Electronic Receiver Design for fast TDM Systems For TDM transmission systems, which support the SDH standard, an opto-electronic receiver has to fulfill several requirements in order to guarantee a well opened eye pattern at its output. Photoreceivers are needed which exhibit a flat gain characteristics down to some 10 kHz to ensure the transmission of the frame synchronisation of the synchronous transport modules (STM-1,4, 16, 64 ...). The components of a photoreceiver (photodiode and amplifier stage) should provide both a good power linearity as well as flat conversion properties within the frequency span of the bit rate. Furthermore a group delay time scatter less than 1+151 % of the bit period and an output reflexion factor less than -10 dB over the full bandwidth is desirable [3]. The polarisation sensitivity should not exceed I_+ 1/ dB, e.g., to compensate for the loss of pofarisation orientation in standard fibers and to allow for some pol.arization scrambling of stringed bits in optical multiplexing experiments. Monolithic Photoreceiver The photoreceiver OEIC comprises a photodiode with integrated optical waveguide [4] and a HEMT based travelling wave amplifier, both monolithically integrated on semi-insulating InP substrate [SI. The layer stack of the evanescent field coupled GaInAs pin-photodiode is optimized to achieve an internal quantum efficiency of about 85 % for photodiodes with a size of 5 20 pm'. The transit-time limited electrical 3 -dB bandwidth amounts to 35 GHz. Optical measurements show","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128264898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The optical generation of low-phase noise millimeter-wave signals and OQPSK 140 Mbivs-data transmissions are reported. Quartz stable millimeter-waves at 18-20 GHz and 62.5 GHz are remotely generated by heterodyning the signals of semiconductor lasers.
{"title":"Fiber Optic Millimeter-wave Generation And Bandwidth Efficient Data Transmission For Broadband Mobile 18-20 And 60 GHz-band Communications","authors":"R. Braun, G. Großkopf, D. Rohde, F. Schmidt","doi":"10.1109/MWP.1997.740270","DOIUrl":"https://doi.org/10.1109/MWP.1997.740270","url":null,"abstract":"The optical generation of low-phase noise millimeter-wave signals and OQPSK 140 Mbivs-data transmissions are reported. Quartz stable millimeter-waves at 18-20 GHz and 62.5 GHz are remotely generated by heterodyning the signals of semiconductor lasers.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121062599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the wide field of interactions between microwaves and optics, the optical control of microwave components ibecomes more and more promising, since it allows a new generation of microwave devices, with a high isolation between the controlling optical signal and the controlled microwave one. These optical microwave planar components are new in the way that they are tunable thanks to the optical power. We present here results on new applications of the optical control of microwave devices, which stand in the microwave frequency mixing.
{"title":"Generation Of Microwave Frequency Mixing By Means Of Photoinduced Load","authors":"B. Boyer, S. Rieubon, A. Vilcot, M. Bouthinon","doi":"10.1109/MWP.1997.740252","DOIUrl":"https://doi.org/10.1109/MWP.1997.740252","url":null,"abstract":"In the wide field of interactions between microwaves and optics, the optical control of microwave components ibecomes more and more promising, since it allows a new generation of microwave devices, with a high isolation between the controlling optical signal and the controlled microwave one. These optical microwave planar components are new in the way that they are tunable thanks to the optical power. We present here results on new applications of the optical control of microwave devices, which stand in the microwave frequency mixing.","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122263584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Gaudino, S. Han, M. Shell, M. Vaughn, D. Blumenthal, J. Laskar
Fiber-optic networks offer the potential to support very wideband, flexible communications for future analog and digital applications. Optical subcarrier multiplexing (OSCM) allows parallel data channels to be transmitted on an optical fiber using a single optical source. One application of OSCM is out-of-band signaling in optical fibers where the &ita channel is transmitted at baseband and the control channel multilplexed onto an RF subcarrier. The control channel is easily recovered by following photodetection with a microwave bandpass filter. Digital information transmitted on the microwave subcarrier can be used to setup end-to-end connections in a circuit switched network;, handle contention resolution [ 13, and transmit headers in packet-based networks [2, 3,4].
{"title":"A Digital-baseband/SCM-Control Fiber Unk with Novel Differential Integrated Optic Transmitter and Microwave/Optical Direct Detection Receiver","authors":"R. Gaudino, S. Han, M. Shell, M. Vaughn, D. Blumenthal, J. Laskar","doi":"10.1109/MWP.1997.740260","DOIUrl":"https://doi.org/10.1109/MWP.1997.740260","url":null,"abstract":"Fiber-optic networks offer the potential to support very wideband, flexible communications for future analog and digital applications. Optical subcarrier multiplexing (OSCM) allows parallel data channels to be transmitted on an optical fiber using a single optical source. One application of OSCM is out-of-band signaling in optical fibers where the &ita channel is transmitted at baseband and the control channel multilplexed onto an RF subcarrier. The control channel is easily recovered by following photodetection with a microwave bandpass filter. Digital information transmitted on the microwave subcarrier can be used to setup end-to-end connections in a circuit switched network;, handle contention resolution [ 13, and transmit headers in packet-based networks [2, 3,4].","PeriodicalId":280865,"journal":{"name":"International Topical Meeting on Microwave Photonics (MWP1997)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131279365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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