Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346735
R. Uhlhorn
The author first presents an overview of the requirements for data communication subsystems in modern, high-performance military aircraft and spacecraft, in order to put a perspective on the issues and challenges. The evolution of the needed fiber-optic components such as transmitters, receivers, and interconnection hardware is presented. This leads to a description of the state of the art in aerospace optoelectronic packaging, as it is practised at the Harris Corporation. The author concludes with a list of promising optical and optoelectronic technologies expected to be found in future avionic subsystems.<>
{"title":"Fiber-optic interconnect and component packaging for the next generation of aerospace platforms","authors":"R. Uhlhorn","doi":"10.1109/ECTC.1993.346735","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346735","url":null,"abstract":"The author first presents an overview of the requirements for data communication subsystems in modern, high-performance military aircraft and spacecraft, in order to put a perspective on the issues and challenges. The evolution of the needed fiber-optic components such as transmitters, receivers, and interconnection hardware is presented. This leads to a description of the state of the art in aerospace optoelectronic packaging, as it is practised at the Harris Corporation. The author concludes with a list of promising optical and optoelectronic technologies expected to be found in future avionic subsystems.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127041953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346800
Wei Lin, Y. Lee, K. Johnson
Spatial light modulators (SLM) using ferroelectric liquid crystal over a very large scale integrated circuit (VLSI/FLC) are critical elements to high-definition displays, pattern correlation, and many other optoelectronic processing systems. A self-aligning soldering technology is being developed to package these high-performance modulators cost-effectively. It needs to achieve a uniform, /spl mu/m-level gap for FLC, and align the glass, the VLSI, and the substrate with an accuracy of 10 /spl mu/m. Two studies have been conducted to assist the technology development. The first designs the solder joints for the assembly. By modeling, 0.4 mm/sup 3/ is chosen for the volume of the large solder joints (1000 /spl mu/m in diameter) that would produce the maximum force pulling the glass against the VLSI for the gap control. Also, 11.4/spl times/10/sup 6/ /spl mu/m/sup 3/ is chosen for the volume of the medium solder joints (500 /spl mu/m in diameter) under the VLSI for low-cost self-alignments. The second study develops a fluxless soldering process with the measurements of the surface tension coefficients w.r.t. different reflow parameters. The optimum parameters are 280/spl deg/C of the hot paddle and 2.5 liter/min flow rate of the forming gas. The achieved surface tension coefficient is abound 280 dyne/cm that assures the quality of the developed soldering is as good as that of the soldering using flux. A glass/silicon test vehicle is soldered with the optimum parameters. The range of its gap thicknesses measured over the entire area is from 1.7 to 2.6 /spl mu/m. The developed soldering technology achieves the required /spl mu/m-level gap with sub-/spl mu/m uniformity.<>
{"title":"Study of soldering for VLSI/FLC spatial light modulators","authors":"Wei Lin, Y. Lee, K. Johnson","doi":"10.1109/ECTC.1993.346800","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346800","url":null,"abstract":"Spatial light modulators (SLM) using ferroelectric liquid crystal over a very large scale integrated circuit (VLSI/FLC) are critical elements to high-definition displays, pattern correlation, and many other optoelectronic processing systems. A self-aligning soldering technology is being developed to package these high-performance modulators cost-effectively. It needs to achieve a uniform, /spl mu/m-level gap for FLC, and align the glass, the VLSI, and the substrate with an accuracy of 10 /spl mu/m. Two studies have been conducted to assist the technology development. The first designs the solder joints for the assembly. By modeling, 0.4 mm/sup 3/ is chosen for the volume of the large solder joints (1000 /spl mu/m in diameter) that would produce the maximum force pulling the glass against the VLSI for the gap control. Also, 11.4/spl times/10/sup 6/ /spl mu/m/sup 3/ is chosen for the volume of the medium solder joints (500 /spl mu/m in diameter) under the VLSI for low-cost self-alignments. The second study develops a fluxless soldering process with the measurements of the surface tension coefficients w.r.t. different reflow parameters. The optimum parameters are 280/spl deg/C of the hot paddle and 2.5 liter/min flow rate of the forming gas. The achieved surface tension coefficient is abound 280 dyne/cm that assures the quality of the developed soldering is as good as that of the soldering using flux. A glass/silicon test vehicle is soldered with the optimum parameters. The range of its gap thicknesses measured over the entire area is from 1.7 to 2.6 /spl mu/m. The developed soldering technology achieves the required /spl mu/m-level gap with sub-/spl mu/m uniformity.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132223261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346766
J. K. Bard, R. Brady, J. Schwark
In 1992, SYCAR resin, a new silicon-carbon thermosetting resin, was introduced to the electronics industry. Characteristics of the resin include excellent moisture resistance, ionic purity, low dielectric constant, and good-thermal properties. This combination of properties makes the resin particularly suited for encapsulant applications. In this paper, the processing and properties of silicon-carbon liquid encapsulants are presented in detail. Production of quality parts requires the use of proper dispensing and cure conditions. The rheology of the silicon-carbon liquid encapsulant as a function of filler level, shear, time, and temperature has been characterized as a guide in selecting proper processing conditions. The development of properties during cure for a range of cure temperatures has been studied to provide recommendations for curing conditions. In addition, the shelf life of the liquid encapsulants has been monitored at temperatures of -20/spl deg/C to ambient temperature over six months. The impact of these results on the processing, curing, and storage of SYCAR resin encapsulant is presented.<>
{"title":"Processing and properties of silicon-carbon liquid encapsulants","authors":"J. K. Bard, R. Brady, J. Schwark","doi":"10.1109/ECTC.1993.346766","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346766","url":null,"abstract":"In 1992, SYCAR resin, a new silicon-carbon thermosetting resin, was introduced to the electronics industry. Characteristics of the resin include excellent moisture resistance, ionic purity, low dielectric constant, and good-thermal properties. This combination of properties makes the resin particularly suited for encapsulant applications. In this paper, the processing and properties of silicon-carbon liquid encapsulants are presented in detail. Production of quality parts requires the use of proper dispensing and cure conditions. The rheology of the silicon-carbon liquid encapsulant as a function of filler level, shear, time, and temperature has been characterized as a guide in selecting proper processing conditions. The development of properties during cure for a range of cure temperatures has been studied to provide recommendations for curing conditions. In addition, the shelf life of the liquid encapsulants has been monitored at temperatures of -20/spl deg/C to ambient temperature over six months. The impact of these results on the processing, curing, and storage of SYCAR resin encapsulant is presented.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131474684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346700
B. Chiou, J. Chang
The metallization of AlN substrates by electroless Cu plating is investigated. Four-percent NaOH aqueous solution is employed as the chemical etchant before plating to study the correlation between the surface roughness and the adhesion strength of the etched substrates. Mechanical interlocking is suggested to be the major cause of the adhesion strength between the Cu and AlN substrate. Adhesion strength as high as 271 kg/cm/sup 2/ is obtained for a polished-and-etched sample. The adhesion strength of the electroless Cu on the AlN substrate increases if the surface roughness of the AlN substrate is enhanced. The interfacial morphology of the Cu-plated AlN substrate is investigated and the adhesion mechanism is explored.<>
{"title":"Electroless Cu plated AlN substrate","authors":"B. Chiou, J. Chang","doi":"10.1109/ECTC.1993.346700","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346700","url":null,"abstract":"The metallization of AlN substrates by electroless Cu plating is investigated. Four-percent NaOH aqueous solution is employed as the chemical etchant before plating to study the correlation between the surface roughness and the adhesion strength of the etched substrates. Mechanical interlocking is suggested to be the major cause of the adhesion strength between the Cu and AlN substrate. Adhesion strength as high as 271 kg/cm/sup 2/ is obtained for a polished-and-etched sample. The adhesion strength of the electroless Cu on the AlN substrate increases if the surface roughness of the AlN substrate is enhanced. The interfacial morphology of the Cu-plated AlN substrate is investigated and the adhesion mechanism is explored.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131627824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346799
M. Robertsson, P. Eriksen, B. Lindstrom, Hans-Christer Moll, Jan-Aake Engstrand
A technique is reported where plastic optical connectors (ferrules) have been transfer molded directly onto optical multimode fibers or fiber ribbons with a silica filled epoxy thermoset. The fabricated connector-types are cylindrical ferrules with 2.5 mm diameter for 1 fiber and flat MT-compatible connectors with 4 or 8 fibers. Preconnectorized optical cables of fixed lengths, typically between 0.2 m and 200 m can be manufactured to a low cost and should be of interest for many applications in the telecom and datacom fields. The loss properties achieved-mean loss values below 1 dB per connector-meet requirements for short haul optical links.<>
本文报道了一种将塑料光学连接器(卡箍)直接模压到硅填充环氧热固性光多模光纤或光纤带上的技术。制造的连接器类型是直径为2.5 mm的圆柱形护套，用于1根纤维和4或8根纤维的扁平mt兼容连接器。固定长度的预连接光缆，通常在0.2米到200米之间，可以以低成本制造，并且应该对电信和数据通信领域的许多应用感兴趣。所获得的损耗特性-每个连接器的平均损耗值低于1 dB -满足短距离光链路的要求。
{"title":"Plastic optical connectors molded directly onto optical fibers and optical fiber ribbons","authors":"M. Robertsson, P. Eriksen, B. Lindstrom, Hans-Christer Moll, Jan-Aake Engstrand","doi":"10.1109/ECTC.1993.346799","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346799","url":null,"abstract":"A technique is reported where plastic optical connectors (ferrules) have been transfer molded directly onto optical multimode fibers or fiber ribbons with a silica filled epoxy thermoset. The fabricated connector-types are cylindrical ferrules with 2.5 mm diameter for 1 fiber and flat MT-compatible connectors with 4 or 8 fibers. Preconnectorized optical cables of fixed lengths, typically between 0.2 m and 200 m can be manufactured to a low cost and should be of interest for many applications in the telecom and datacom fields. The loss properties achieved-mean loss values below 1 dB per connector-meet requirements for short haul optical links.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"271 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129684888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346734
N. Borrelli
The method of fabricating two-dimensional patterns of glass microlenses by a photothermal technique in a photosensitive glass is reviewed. Techniques by which the lenses are characterized and tested are discussed. Applications to a number of optoelectronic devices are shown and discussed. Lens arrays made by the process described can be classified into three optical-function categories: one-to-one arrays, optical-fiber interfaces, and field multiplexing.<>
{"title":"Optoelectronic interconnects using microlens arrays formed in glass","authors":"N. Borrelli","doi":"10.1109/ECTC.1993.346734","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346734","url":null,"abstract":"The method of fabricating two-dimensional patterns of glass microlenses by a photothermal technique in a photosensitive glass is reviewed. Techniques by which the lenses are characterized and tested are discussed. Applications to a number of optoelectronic devices are shown and discussed. Lens arrays made by the process described can be classified into three optical-function categories: one-to-one arrays, optical-fiber interfaces, and field multiplexing.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130922860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346739
J. Burgess, C. Neugebauer
A quasi-hermetic approach to packaging is discussed. A metal overlayer is used to seal the hybrid package. This package used the GE HDI (high density interconnect) overlay process with a metal barrier layer. Background experiments with pinhole filling metal layer selection, process development, and testing are discussed.<>
{"title":"RwoH integral package for MCM using the GE HDI process with a metal barrier","authors":"J. Burgess, C. Neugebauer","doi":"10.1109/ECTC.1993.346739","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346739","url":null,"abstract":"A quasi-hermetic approach to packaging is discussed. A metal overlayer is used to seal the hybrid package. This package used the GE HDI (high density interconnect) overlay process with a metal barrier layer. Background experiments with pinhole filling metal layer selection, process development, and testing are discussed.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121273761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346813
Y. Nakamura, M. Ohta, T. Nishioka, A. Tanaka, S.-i. Ohizumi, H. Tabata, M. Kohmoto
A new ultra thin tape carrier package (TCP) for memory card was developed to meet demands for smaller and thinner TSOP. The thickness of package and Si chip are 0.4 and 0.2 mm, respectively. In order to achieve thin packages, the technology of tape automated bonding (TAB) is required. Nitto's transfer molding technology is used to obtain the same level of both reliability and conventional reflow solderability as those of other surface mount devices (SMDs). The upper and side surface of the Si chip are encapsulated with resin, but the bottom surface is still exposed. In this paper, four kinds of epoxy encapsulating resins with different filler volume fractions were prepared to obtain various mechanical and flow properties. The effects of the coefficient of thermal expansion and viscosity of the encapsulating resin on the performance of the new ultra thin packages are studied.<>
{"title":"Effects of mechanical and flow properties of encapsulating resin on the performance of ultra thin tape carrier package","authors":"Y. Nakamura, M. Ohta, T. Nishioka, A. Tanaka, S.-i. Ohizumi, H. Tabata, M. Kohmoto","doi":"10.1109/ECTC.1993.346813","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346813","url":null,"abstract":"A new ultra thin tape carrier package (TCP) for memory card was developed to meet demands for smaller and thinner TSOP. The thickness of package and Si chip are 0.4 and 0.2 mm, respectively. In order to achieve thin packages, the technology of tape automated bonding (TAB) is required. Nitto's transfer molding technology is used to obtain the same level of both reliability and conventional reflow solderability as those of other surface mount devices (SMDs). The upper and side surface of the Si chip are encapsulated with resin, but the bottom surface is still exposed. In this paper, four kinds of epoxy encapsulating resins with different filler volume fractions were prepared to obtain various mechanical and flow properties. The effects of the coefficient of thermal expansion and viscosity of the encapsulating resin on the performance of the new ultra thin packages are studied.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121342451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346749
S. Kang, T. Ju, Y.C. Lee
Thermosonic bondings for flip-chip, TAB, or surface mount technologies are potential alternatives to solder connections. They are dry processes having low-cost, simplicity, and fine-pitch advantages. The applications of these new connection technologies are expected to grow if their two major problems, assembly yield and reliability, are solved. The assembly problem is studied in this paper. It is well known that the use of ultrasonic energy can significantly simplify metal bonding processes. However, the changes of thermosonic process windows for area-array connections are not controllable; the progress of this technology development is not encouraging. Using flip-chip bonding cases with 30- and 1000-I/O chips, this work studies the effects on yields from tool configurations and masses. The yield is closely related to the ultrasonic amplitude of metal bumps. The amplitude associated with a good bonding process for a 30-I/O chip is about 1.30 /spl mu/m. However, it could be reduced to 0.26 /spl mu/m when the die collet is enlarged for a 1000-I/O chip. Fortunately, such a reduction can be overcome by a design that changes the mass of the collet and the length of the shank. This paper will address the understanding and the control of these effects with experimental and modeling studies.<>
用于倒装芯片、贴片或表面贴装技术的热声键合是焊接连接的潜在替代品。它们是干法工艺，具有低成本、简单和精细的优点。如果解决了装配良率和可靠性这两个主要问题，这些新连接技术的应用有望得到增长。本文研究了装配问题。众所周知，利用超声波能量可以大大简化金属键合过程。然而，区域阵列连接的热超声过程窗口的变化是不可控的;这项技术发展的进展并不令人鼓舞。采用30- i /O和1000-I/O芯片的倒装键合案例，研究了刀具配置和质量对良率的影响。屈臣率与金属凸起的超声振幅密切相关。对于30-I/O芯片，与良好键合过程相关的振幅约为1.30 /spl mu/m。然而，当将模具夹头扩大到1000-I/O芯片时，可以将其降低到0.26 /spl mu/m。幸运的是，这种减少可以通过改变夹头的质量和柄的长度的设计来克服。本文将通过实验和模型研究来阐述对这些效应的理解和控制。
{"title":"Thermosonic bonding: an alternative to area-array solder connections","authors":"S. Kang, T. Ju, Y.C. Lee","doi":"10.1109/ECTC.1993.346749","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346749","url":null,"abstract":"Thermosonic bondings for flip-chip, TAB, or surface mount technologies are potential alternatives to solder connections. They are dry processes having low-cost, simplicity, and fine-pitch advantages. The applications of these new connection technologies are expected to grow if their two major problems, assembly yield and reliability, are solved. The assembly problem is studied in this paper. It is well known that the use of ultrasonic energy can significantly simplify metal bonding processes. However, the changes of thermosonic process windows for area-array connections are not controllable; the progress of this technology development is not encouraging. Using flip-chip bonding cases with 30- and 1000-I/O chips, this work studies the effects on yields from tool configurations and masses. The yield is closely related to the ultrasonic amplitude of metal bumps. The amplitude associated with a good bonding process for a 30-I/O chip is about 1.30 /spl mu/m. However, it could be reduced to 0.26 /spl mu/m when the die collet is enlarged for a 1000-I/O chip. Fortunately, such a reduction can be overcome by a design that changes the mass of the collet and the length of the shank. This paper will address the understanding and the control of these effects with experimental and modeling studies.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115840287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-06-01DOI: 10.1109/ECTC.1993.346847
K.P. Stone, M. Goldenberg, R. Munikoti
Environmental Stress Screening (ESS) is a powerful evaluation method used to realize reliability gains and decrease infant mortalities of electronic hardware. This paper provides some background theory on ESS and discusses case histories of its application on several Northern Telecom designed products and OEM components that are used in NT products. The results of screening show that defects in design, manufacturing and components that are missed by conventional reliability screening methods can be quickly identified by ESS.<>
{"title":"Field reliability enhancement of electronic modules using ESS","authors":"K.P. Stone, M. Goldenberg, R. Munikoti","doi":"10.1109/ECTC.1993.346847","DOIUrl":"https://doi.org/10.1109/ECTC.1993.346847","url":null,"abstract":"Environmental Stress Screening (ESS) is a powerful evaluation method used to realize reliability gains and decrease infant mortalities of electronic hardware. This paper provides some background theory on ESS and discusses case histories of its application on several Northern Telecom designed products and OEM components that are used in NT products. The results of screening show that defects in design, manufacturing and components that are missed by conventional reliability screening methods can be quickly identified by ESS.<<ETX>>","PeriodicalId":281423,"journal":{"name":"Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116104051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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