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11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)最新文献

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Analysis of extended EMF based sensorless control with dc-link voltage fluctuation 考虑直流电压波动的扩展电动势无传感器控制分析
J. Yan, X. Wu, Z. Zhu
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引用次数: 2
A comparative study between inner and outer rotor variable flux reluctance machine topologies for heavy-duty electric vehicles 重型电动汽车内外转子可变磁阻电机拓扑结构的比较研究
D. Ceylan, K. O. Boynov, E. Lomonova
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引用次数: 0
Remote laser cutting of high cobalt content electrical steel: preliminary results and microscopy 高钴含量电工钢的远程激光切割:初步结果和显微观察
A. Winter, L. Tinkler, G. Jewell
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引用次数: 0
A DC bus signaling control strategy for DC microgrids with consideration of battery state of charge balancing 考虑电池状态平衡的直流微电网直流母线信令控制策略
H. Xu, F. Li, R. Wang, Z. Lin, F. Wang
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引用次数: 0
Performance analysis of a hybrid ferrite IPM/SynR traction machine with axially combined rotor structure 轴向组合转子结构的混合铁氧体IPM/SynR牵引机性能分析
Khoa Dang Hoang, A. Yu, K. Atallah, G. Valente, A. Shahaj
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引用次数: 0
A low-loss passive filter for overvoltage mitigation of inverter-driven motors with ultra-long cables 一种低损耗无源滤波器,用于超长电缆逆变器驱动电机的过电压缓解
H. Izadi, E. Asadi
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引用次数: 0
A kind of ZVS quasi impedance source inverter with high voltage transmission ratio 一种具有高传输比的ZVS准阻抗源逆变器
P. Xing, J. Li, D. Chen
{"title":"A kind of ZVS quasi impedance source inverter with high voltage transmission ratio","authors":"P. Xing, J. Li, D. Chen","doi":"10.1049/icp.2022.1111","DOIUrl":"https://doi.org/10.1049/icp.2022.1111","url":null,"abstract":"","PeriodicalId":288253,"journal":{"name":"11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128662036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of on-state static and dynamic transients of high voltage 4H-SIC Merged-PiN-Schottky diode 高压4H-SIC合并pin - schottky二极管的稳态和动态瞬态分析
C. Shen, S. Jahdi, P. Mellor, J. Yang, E. Bashar, O. Alatise, J. Ortiz-Gonzalez
{"title":"Analysis of on-state static and dynamic transients of high voltage 4H-SIC Merged-PiN-Schottky diode","authors":"C. Shen, S. Jahdi, P. Mellor, J. Yang, E. Bashar, O. Alatise, J. Ortiz-Gonzalez","doi":"10.1049/icp.2022.1068","DOIUrl":"https://doi.org/10.1049/icp.2022.1068","url":null,"abstract":"","PeriodicalId":288253,"journal":{"name":"11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128526572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The impact of electrothermal stress on threshold voltage drift of gan and SIC cascode devices 电热应力对gan和SIC级联器件阈值电压漂移的影响
Y. Gunaydin, S. Jahdi, X. Yuan, J. Yang, B. Stark, J. Ortiz-Gonzalez, R. Wu, O. Alatise
Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices both take advantage of a low-voltage enhancement-mode Silicon power MOSFET coupled with a high-voltage depletion-mode GaN HEMT or SiC JFET to realize high switching frequencies with the intention of avoiding charge trapping and threshold voltage drift in the gate oxide traps of enhancement-mode SiC MOSFETs. Nevertheless, in this paper it is shown that SiC and GaN Cascodes will also suffer from the gate threshold voltage drift when subjected to significant electrothermal stress. This is partly due to the natural drift of threshold voltage in the gate, and partly due to the impact of the leakage current by the high-voltage device. The threshold voltage drift can lead to permanent degradations and potential failures, and as such is the subject of this investigation.
氮化镓(GaN)和碳化硅(SiC)功率级联器件都利用低压增强模式硅功率MOSFET与高压耗尽模式GaN HEMT或SiC JFET耦合来实现高开关频率,目的是避免增强模式SiC MOSFET的栅极氧化物陷阱中的电荷捕获和阈值电压漂移。然而,本文表明,当受到显著的电热应力时,SiC和GaN级联码也会遭受门阈值电压漂移。这部分是由于门极中阈值电压的自然漂移,部分是由于高压器件泄漏电流的影响。阈值电压漂移可能导致永久性的退化和潜在的故障,因此是本研究的主题。
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引用次数: 0
Statcom data-driven control for grid dynamic performance improvement Statcom数据驱动控制,改善电网动态性能
D. Rivera, D. Guillen, J. Mayo-Maldonado, J. E. Valdez-Resendiz1, J. Rosas-Caro, C. A. Soriano-Rangel
{"title":"Statcom data-driven control for grid dynamic performance improvement","authors":"D. Rivera, D. Guillen, J. Mayo-Maldonado, J. E. Valdez-Resendiz1, J. Rosas-Caro, C. A. Soriano-Rangel","doi":"10.1049/icp.2022.1124","DOIUrl":"https://doi.org/10.1049/icp.2022.1124","url":null,"abstract":"","PeriodicalId":288253,"journal":{"name":"11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116050940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
11th International Conference on Power Electronics, Machines and Drives (PEMD 2022)
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