Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687097
A. Sulaiman, N. M. Yusoff, S. Hitam, A. Abas, M. Mahdi
We investigate a flat multiwavelength fiber laser (MWFL) with the extinction ratio (ER) is continuously adjustable at variation of either half wave plate (HWP) position or polarization maintaining fiber (PMF) length. The multiwavelength laser is generated from an intensity dependent transmission (IDT) effect which is induced from nonlinear polarization rotation (NPR), arising from a combination of a semiconductor optical amplifier (SOA), polarization controllers (PCs) and polarization beam splitter (PBS). The ER is continuously adjustable from 6 dB to 12 dB by rotating the HWP of a PC, as the same value of the minimum and the maximum ER can be obtained in every 45° of HWP position. The ER value is also adjustable at different length of PMF, as longer PMF is contributed to a flatter multiwavelength spectrum. The proposed MWFL design is simple, high number of lines, flat and able to adjust ER continuously.
{"title":"Investigation of continuously adjustable extinction ratio in a multiwavelength SOA fiber laser based on intensity dependent transmission effect","authors":"A. Sulaiman, N. M. Yusoff, S. Hitam, A. Abas, M. Mahdi","doi":"10.1109/ICP.2013.6687097","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687097","url":null,"abstract":"We investigate a flat multiwavelength fiber laser (MWFL) with the extinction ratio (ER) is continuously adjustable at variation of either half wave plate (HWP) position or polarization maintaining fiber (PMF) length. The multiwavelength laser is generated from an intensity dependent transmission (IDT) effect which is induced from nonlinear polarization rotation (NPR), arising from a combination of a semiconductor optical amplifier (SOA), polarization controllers (PCs) and polarization beam splitter (PBS). The ER is continuously adjustable from 6 dB to 12 dB by rotating the HWP of a PC, as the same value of the minimum and the maximum ER can be obtained in every 45° of HWP position. The ER value is also adjustable at different length of PMF, as longer PMF is contributed to a flatter multiwavelength spectrum. The proposed MWFL design is simple, high number of lines, flat and able to adjust ER continuously.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115182702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687066
S. Verma, S. Mukherjee
The Auger recombination is considered to be one of the reasons for the origin of efficiency droop in InGaN-based light-emitting diodes (LEDs). We discuss, through numerical simulation, the impact of Auger recombination on internal quantum efficiency (IQE), luminous power and electroluminescence intensity of hybrid green light-emitting diode. The simulation results indicate that large values of Auger recombination coefficient decreases IQE greatly. Also, electron leakage is found to be a contributing factor towards efficiency droop at high injection current.
{"title":"Impact of Auger recombination on hybrid green light-emitting diode","authors":"S. Verma, S. Mukherjee","doi":"10.1109/ICP.2013.6687066","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687066","url":null,"abstract":"The Auger recombination is considered to be one of the reasons for the origin of efficiency droop in InGaN-based light-emitting diodes (LEDs). We discuss, through numerical simulation, the impact of Auger recombination on internal quantum efficiency (IQE), luminous power and electroluminescence intensity of hybrid green light-emitting diode. The simulation results indicate that large values of Auger recombination coefficient decreases IQE greatly. Also, electron leakage is found to be a contributing factor towards efficiency droop at high injection current.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128623565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687103
A. Alhassan, N. Badruddin, N. Saad, S. Aljunid
This paper evaluates the performance of spatial multiplexing (SM) in beat noise mitigation in coherent spectral amplitude coding (SAC) OCDMA via the Optisystem software kit. We take into consideration two different laser source configurations; a centralized shared multi laser source and a precisely controlled multi laser source. For different performance merits, the results showed superiority of the SM SAC over the conventional SAC OCDMA. For example, an up to nine order of magnitude improvement in the bit error rate (BER) was reported for six users at 1.25 Gb/s.
{"title":"Beat noise mitigation through spatial multiplexing in spectral amplitude coding OCDMA networks","authors":"A. Alhassan, N. Badruddin, N. Saad, S. Aljunid","doi":"10.1109/ICP.2013.6687103","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687103","url":null,"abstract":"This paper evaluates the performance of spatial multiplexing (SM) in beat noise mitigation in coherent spectral amplitude coding (SAC) OCDMA via the Optisystem software kit. We take into consideration two different laser source configurations; a centralized shared multi laser source and a precisely controlled multi laser source. For different performance merits, the results showed superiority of the SM SAC over the conventional SAC OCDMA. For example, an up to nine order of magnitude improvement in the bit error rate (BER) was reported for six users at 1.25 Gb/s.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"90 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127421746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687057
Sheng-Chyan Lee, Y. Yong, K. Yeap, F. Abdul Rahman
An asymmetric tapered Long Period Fiber Grating (LPFG) was fabricated using an ignition coil based electric arcing fabrication system. The angle measurement of LPFG imaging using Matlab confirms the asymmetric tapered LPFG formation. Characterization of the asymmetric tapered Long Period Fiber Grating was done to test its sensitivity with respect to changes in the surrounding refractive index and temperature for LPFG at 900 nm to 1000 nm and 1500 nm to 1600 nm wavelength ranges. The fabricated asymmetric tapered LPFG performance is comparable with LPFG fabricated by fusion splicer but with less gratings and higher transmission loss.
{"title":"An asymmetric tapered Long Period Fiber Grating: Fabrication and characterization","authors":"Sheng-Chyan Lee, Y. Yong, K. Yeap, F. Abdul Rahman","doi":"10.1109/ICP.2013.6687057","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687057","url":null,"abstract":"An asymmetric tapered Long Period Fiber Grating (LPFG) was fabricated using an ignition coil based electric arcing fabrication system. The angle measurement of LPFG imaging using Matlab confirms the asymmetric tapered LPFG formation. Characterization of the asymmetric tapered Long Period Fiber Grating was done to test its sensitivity with respect to changes in the surrounding refractive index and temperature for LPFG at 900 nm to 1000 nm and 1500 nm to 1600 nm wavelength ranges. The fabricated asymmetric tapered LPFG performance is comparable with LPFG fabricated by fusion splicer but with less gratings and higher transmission loss.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117081896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687120
N. Tamchek, S. Siti, Y. M. Amin, R. Nor, K. A. Mat-Sharif, H. Abdul-Rashid
Germanium doped silica optical preform fabricated using standard MCVD has been studied in terms of the effect of germanium-oxygen deficient defect using optical characterization techniques to investigate the effect of preform process temperature. The preforms are fabricated using standard MCVD process using SiCl4 and GeCl4 vapor precursor and their collapse temperature varies between 2100°C and 2200 °C. The absorption spectra of the preform at UV region is used to identify the Ge concentrations in the sample and the background loss. From the absorption result, two peaks can be observed at 5.1eV and 6.7eV. By using Raman and Photoluminescence spectroscopy, the effect of the temperature to the Ge concentration can also be quantify.
{"title":"Optical properties of GeO2-doped silica preform from absorption and vibrational spectroscopy","authors":"N. Tamchek, S. Siti, Y. M. Amin, R. Nor, K. A. Mat-Sharif, H. Abdul-Rashid","doi":"10.1109/ICP.2013.6687120","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687120","url":null,"abstract":"Germanium doped silica optical preform fabricated using standard MCVD has been studied in terms of the effect of germanium-oxygen deficient defect using optical characterization techniques to investigate the effect of preform process temperature. The preforms are fabricated using standard MCVD process using SiCl4 and GeCl4 vapor precursor and their collapse temperature varies between 2100°C and 2200 °C. The absorption spectra of the preform at UV region is used to identify the Ge concentrations in the sample and the background loss. From the absorption result, two peaks can be observed at 5.1eV and 6.7eV. By using Raman and Photoluminescence spectroscopy, the effect of the temperature to the Ge concentration can also be quantify.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131851611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687109
M. Ali, F. Abdullah, M. Z. Jamaludin, M. Al-Mansoori, T. F. Al-Mashhadani, A. Abass
The effect of the location of the Erbium-doped fiber (EDF) on the performance of the hybrid dispersion compensation of Raman/EDF amplifier is discussed in this study. Two different configuration set-ups were determined according to the position of the EDF amplifier. The setup in which EDF A is positioned before is denoted by type A, while type B denotes the setup in which EDFA is positioned after. In these two amplifier configurations, the Raman gain saturation due to the Stimulated Brillouin scattering (SBS) effect is included. Type B shows a better hybrid fiber amplifier (HF A) performance in terms of overall gain, noise figure (NF), and flatness gain profile. A small signal gain of 33 and 35 dB with a flat gain bandwidth of 40 nm is achieved for types A and B, respectively. In addition, type B exhibits a high peak gain of 23 dB, with gain variation of 3 dB along 70 nm bandwidth for large input signal compared with the 17 dB peak gain of type A with gain variation of 4.4 dB along the same bandwidth.
{"title":"Effect of EDF position on the performance of hybrid dispersion-compensating Raman/EDF amplifier","authors":"M. Ali, F. Abdullah, M. Z. Jamaludin, M. Al-Mansoori, T. F. Al-Mashhadani, A. Abass","doi":"10.1109/ICP.2013.6687109","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687109","url":null,"abstract":"The effect of the location of the Erbium-doped fiber (EDF) on the performance of the hybrid dispersion compensation of Raman/EDF amplifier is discussed in this study. Two different configuration set-ups were determined according to the position of the EDF amplifier. The setup in which EDF A is positioned before is denoted by type A, while type B denotes the setup in which EDFA is positioned after. In these two amplifier configurations, the Raman gain saturation due to the Stimulated Brillouin scattering (SBS) effect is included. Type B shows a better hybrid fiber amplifier (HF A) performance in terms of overall gain, noise figure (NF), and flatness gain profile. A small signal gain of 33 and 35 dB with a flat gain bandwidth of 40 nm is achieved for types A and B, respectively. In addition, type B exhibits a high peak gain of 23 dB, with gain variation of 3 dB along 70 nm bandwidth for large input signal compared with the 17 dB peak gain of type A with gain variation of 4.4 dB along the same bandwidth.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134183506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687111
S. Liaw, Pei-Shih Tsai, H. L. Minh, Zabih Ghassemlooy, Wen-Fang Wu
The paper presents a power-compensated, 3×3 reconfigurable, multiwavelength and bidirectional optical cross-connect (RMB-OXC) for all-optical communications networks. RMB-OXC characteristics and its performance are experimentally verified in a bidirectional 8-channel × 10 Gb/s capacity system. We have observed only ~0.5 dB power penalty in the bidirectional transmission in comparison to the unidirectional transmission. The proposed RMB-OXC can be utilised in many applications in high-speed wavelength division multiplexed (WDM) networks.
{"title":"BER evaluation/or 3×3 reconfigurable multiwavelength bidirectional optical cross-connect","authors":"S. Liaw, Pei-Shih Tsai, H. L. Minh, Zabih Ghassemlooy, Wen-Fang Wu","doi":"10.1109/ICP.2013.6687111","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687111","url":null,"abstract":"The paper presents a power-compensated, 3×3 reconfigurable, multiwavelength and bidirectional optical cross-connect (RMB-OXC) for all-optical communications networks. RMB-OXC characteristics and its performance are experimentally verified in a bidirectional 8-channel × 10 Gb/s capacity system. We have observed only ~0.5 dB power penalty in the bidirectional transmission in comparison to the unidirectional transmission. The proposed RMB-OXC can be utilised in many applications in high-speed wavelength division multiplexed (WDM) networks.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127065617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687076
M. Imamzai, M. Aghaei, N. Amin
The main purpose of this paper is to investigate the effect of bandgap, carrier concentration, minority carrier life time and CdZnTe absorber layer thickness on the thin film solar cell baseline case. The bandgap of Cd1-xZnx Te solar cells are tunable between 1.4SeV and 2.2eV (depends on the value of x). In this research AMPS-1D has been used for simulation. The results of this study indicate that by decreasing the absorber layer's thickness, the efficiency decreases. In the baseline cases, the absorber layer's bandgap was changed from 1.45eV to 2.05eV, It was found out that by increasing the energy gap, efficiency increases but after 1.85ev the bandgap will be constant, hence Eg=1.88eV was considered for absorber to analyze the baseline cases. It was observed that by increasing the lifetime and carrier concentrations of absorber layer, the output parameters increase in the cells. However, the baseline cases structures are the same (SnO2/CdS/CdZnTe/Back Contact) and the highest conversion efficiency of 25.505% is obtained by baseline case 2 (Jsc= 29.819 mA/cm2, Voc = 1.28 Volt, FF= 0.731) which has higher doping and minority carriers lifetime.
{"title":"Numerical modeling and analysis of CdS/Cd1−xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness","authors":"M. Imamzai, M. Aghaei, N. Amin","doi":"10.1109/ICP.2013.6687076","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687076","url":null,"abstract":"The main purpose of this paper is to investigate the effect of bandgap, carrier concentration, minority carrier life time and CdZnTe absorber layer thickness on the thin film solar cell baseline case. The bandgap of Cd1-xZnx Te solar cells are tunable between 1.4SeV and 2.2eV (depends on the value of x). In this research AMPS-1D has been used for simulation. The results of this study indicate that by decreasing the absorber layer's thickness, the efficiency decreases. In the baseline cases, the absorber layer's bandgap was changed from 1.45eV to 2.05eV, It was found out that by increasing the energy gap, efficiency increases but after 1.85ev the bandgap will be constant, hence Eg=1.88eV was considered for absorber to analyze the baseline cases. It was observed that by increasing the lifetime and carrier concentrations of absorber layer, the output parameters increase in the cells. However, the baseline cases structures are the same (SnO2/CdS/CdZnTe/Back Contact) and the highest conversion efficiency of 25.505% is obtained by baseline case 2 (Jsc= 29.819 mA/cm2, Voc = 1.28 Volt, FF= 0.731) which has higher doping and minority carriers lifetime.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126637220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687094
J. Coronel, M. Varón, A. Rissons, S. Chaudron
This article presents the architecture for an optoelectronic oscillator using the properties of an injection locked VCSEL in order to improve the quality and frequency of the generated signals. The main advantage of this configuration is that the VCSEL is injection locked using another VCSEL. The use of this Injection-locked VCSEL-by-VCSEL source reduces the cost, complexity and power consumption of the system.
{"title":"Injection locked VCSEL based oscillator (ILVBO)","authors":"J. Coronel, M. Varón, A. Rissons, S. Chaudron","doi":"10.1109/ICP.2013.6687094","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687094","url":null,"abstract":"This article presents the architecture for an optoelectronic oscillator using the properties of an injection locked VCSEL in order to improve the quality and frequency of the generated signals. The main advantage of this configuration is that the VCSEL is injection locked using another VCSEL. The use of this Injection-locked VCSEL-by-VCSEL source reduces the cost, complexity and power consumption of the system.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114748558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICP.2013.6687129
M. Elmagzoub, A. .. Mohammad, R. Q. Shaddad, S. M. Idrus, S. A. Al-Gailani
Current passive optical networks (PONs) (Gigabit PON (GPON) and Ethernet PON (EPON)) will run out of bandwidth sooner or later due to the ever increasing bandwidth demand. The aforementioned and the new next generation PON stage 1 (NG-PON1) standards (10 Gigabit-PON (XG-PON) and 10 Gigabit Ethernet-PON (10G-EPON)) are based on time division multiplexing (TDM-PON), which has its limitations such as limited bandwidth. In this paper, stacked TDM-PON architecture with four wavelengths for each direction, that is compatible with currently deployed optical distribution networks (ODNs), is proposed to meet the requirements of NG-PON stage 2 (NG-PON2). The proposed architecture has colorless optical network units (ONUs) by generating the upstream wavelengths at the optical line terminal (OLT). Four laser diodes (LDs) at the OLT for the upstream transmission are enough for all ONUs, instated of having LD or optical transmitter at each ONU, which makes a colorless and cost-effective ONU. A good performance is observed for 40 Gb/s downstream transmission and 10 Gb/s upstream transmission.
当前的无源光网络(千兆光网络(GPON)和以太网光网络(EPON))由于带宽需求的不断增长，迟早会耗尽带宽。上述和新一代PON第一阶段(NG-PON1)标准(10千兆PON (XG-PON)和10千兆以太网PON (10G-EPON))都是基于时分复用(TDM-PON)的，具有带宽限制等局限性。为了满足NG-PON第二阶段(NG-PON2)的要求，本文提出了一种与当前部署的odn (optical distribution network)兼容的、每个方向4个波长的堆叠TDM-PON架构。该架构通过在光线路终端(OLT)产生上游波长而具有无色光网络单元(onu)。在OLT上用于上游传输的四个激光二极管(LD)足以满足所有ONU的需求，而不是在每个ONU上安装LD或光发射器，这使得ONU具有无色和成本效益。在下行传输40gb /s和上行传输10gb /s的情况下，性能良好。
{"title":"Stacked TDM-PON with colorless ONU for NG-PON","authors":"M. Elmagzoub, A. .. Mohammad, R. Q. Shaddad, S. M. Idrus, S. A. Al-Gailani","doi":"10.1109/ICP.2013.6687129","DOIUrl":"https://doi.org/10.1109/ICP.2013.6687129","url":null,"abstract":"Current passive optical networks (PONs) (Gigabit PON (GPON) and Ethernet PON (EPON)) will run out of bandwidth sooner or later due to the ever increasing bandwidth demand. The aforementioned and the new next generation PON stage 1 (NG-PON1) standards (10 Gigabit-PON (XG-PON) and 10 Gigabit Ethernet-PON (10G-EPON)) are based on time division multiplexing (TDM-PON), which has its limitations such as limited bandwidth. In this paper, stacked TDM-PON architecture with four wavelengths for each direction, that is compatible with currently deployed optical distribution networks (ODNs), is proposed to meet the requirements of NG-PON stage 2 (NG-PON2). The proposed architecture has colorless optical network units (ONUs) by generating the upstream wavelengths at the optical line terminal (OLT). Four laser diodes (LDs) at the OLT for the upstream transmission are enough for all ONUs, instated of having LD or optical transmitter at each ONU, which makes a colorless and cost-effective ONU. A good performance is observed for 40 Gb/s downstream transmission and 10 Gb/s upstream transmission.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114832287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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