Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335747
M. Tokumitsu, M. Muraguchi
A new MMIC front-end circuit configuration is proposed for very low power dissipation. The L band front-end MMIC with this configuration consumes only 11.5 mW power consumption. To minimize current dissipatlion, low noise amplifier and intermediate frequency (IF) amplifier bias lines are vertically connected through an FET current source and a grounding capacitor without RF signal interference and large voltage drop. Using this configuration, we fabricated an L-band front-end one-chip GaAs MMIC whose total power dissipation is 11.5 mW with a conversion gain of over 20 dB. Power dissipation of 11.5 mW is, to our knowledge, the lowest ever reported for front-end MMIC modules.
{"title":"A Very Low Power Dissipation Front-End MMIC for L-Band Receivers","authors":"M. Tokumitsu, M. Muraguchi","doi":"10.1109/EUMA.1992.335747","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335747","url":null,"abstract":"A new MMIC front-end circuit configuration is proposed for very low power dissipation. The L band front-end MMIC with this configuration consumes only 11.5 mW power consumption. To minimize current dissipatlion, low noise amplifier and intermediate frequency (IF) amplifier bias lines are vertically connected through an FET current source and a grounding capacitor without RF signal interference and large voltage drop. Using this configuration, we fabricated an L-band front-end one-chip GaAs MMIC whose total power dissipation is 11.5 mW with a conversion gain of over 20 dB. Power dissipation of 11.5 mW is, to our knowledge, the lowest ever reported for front-end MMIC modules.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133792695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335823
E. Godshalk
With increased wafer probing activity at millimeter wave frequencies, and the maturing of wafer probing technology itself, new issues have arisen. Many of these issues involve phenomena which, although present at lower frequencies, do not cause significant perturbation at measured data below 40 GHz. At higher frequencies wafer probe systems begin to experience the effects of phenomena such as surface waves and sensitivity to the RF properties of the surface below the device under test. This paper presents measured data showing the presence of surface waves and how they interact with wafer probes and coplanar waveguide transmission lines. Methods for minimizing these interactions are explored and quantified. Finally, the impact of surface wave effects on wafer calibrations are addressed.
{"title":"Wafer Probing Issues at Millimeter Wave Frequencies","authors":"E. Godshalk","doi":"10.1109/EUMA.1992.335823","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335823","url":null,"abstract":"With increased wafer probing activity at millimeter wave frequencies, and the maturing of wafer probing technology itself, new issues have arisen. Many of these issues involve phenomena which, although present at lower frequencies, do not cause significant perturbation at measured data below 40 GHz. At higher frequencies wafer probe systems begin to experience the effects of phenomena such as surface waves and sensitivity to the RF properties of the surface below the device under test. This paper presents measured data showing the presence of surface waves and how they interact with wafer probes and coplanar waveguide transmission lines. Methods for minimizing these interactions are explored and quantified. Finally, the impact of surface wave effects on wafer calibrations are addressed.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116565299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335742
S. Tretyakov, A. Viitanen
Resonator measurement techniques for exploring electromagnetic parameters of of biisotropic (non-reciprocal chiral) materials are discussed. The biisotropic materials are the most general linear isotropic materials and the corresponding constitutive relations are governed by four complex material parameters. The theory of resonator measurement techniques, based on the perturbation analysis, is developed. It is shown that the complex permittivity, permeability and the non-reciprocity (Tellegen) parameter of a small sample can be determined by measuring resonant frequency shifts in a rectangular resonator. To measure the non-reciprocity parameter, a method utilizing a rectangular resonator with two degenerated modes is proposed.
{"title":"Perturbation Theory for a Biisotropic Sample in a Cavity Resonator with Applications to Measurement Techniques","authors":"S. Tretyakov, A. Viitanen","doi":"10.1109/EUMA.1992.335742","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335742","url":null,"abstract":"Resonator measurement techniques for exploring electromagnetic parameters of of biisotropic (non-reciprocal chiral) materials are discussed. The biisotropic materials are the most general linear isotropic materials and the corresponding constitutive relations are governed by four complex material parameters. The theory of resonator measurement techniques, based on the perturbation analysis, is developed. It is shown that the complex permittivity, permeability and the non-reciprocity (Tellegen) parameter of a small sample can be determined by measuring resonant frequency shifts in a rectangular resonator. To measure the non-reciprocity parameter, a method utilizing a rectangular resonator with two degenerated modes is proposed.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123602486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335745
J. C. Clifton, J. Arnold
Multi element arrays with active transmit-receive modules have resulted in the ability to reconfigure beam patterns and steer beams through the use of multibit phase shifters and amplitude control. The advantages of the GaAs MMIC in size, mass and reproducibility, together with negligible power consumption, are critical in the realisation of a versatile spacebourne synthetic aperture radar with the facility for reconfigurability by telecommand from groundstations. A six bit attenuator is presented, designed to cover the 4.9 to 5.7 GHz band but with excellent performance from D.C. to 6 GHz. The measured rms error for all states is 0.2dB.
{"title":"Digitally Controlled GaAs MMIC Attenuator for Active Phase Arrays","authors":"J. C. Clifton, J. Arnold","doi":"10.1109/EUMA.1992.335745","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335745","url":null,"abstract":"Multi element arrays with active transmit-receive modules have resulted in the ability to reconfigure beam patterns and steer beams through the use of multibit phase shifters and amplitude control. The advantages of the GaAs MMIC in size, mass and reproducibility, together with negligible power consumption, are critical in the realisation of a versatile spacebourne synthetic aperture radar with the facility for reconfigurability by telecommand from groundstations. A six bit attenuator is presented, designed to cover the 4.9 to 5.7 GHz band but with excellent performance from D.C. to 6 GHz. The measured rms error for all states is 0.2dB.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123833267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335732
H. Meschede, J. Albers, R. Reuter, J. Kraus, D. Peters, W. Brockerhoff, F. Tegude
Microwave measurements at cryogenic temperatures are very important to investigate the pronounced microwave performance of High Electron Mobility Transistors (HEMT) /1,2/. In order to perform an exact small signal analysis the On-Wafer measurement technique is an indispensable tool. An On-Wafer measurement setup to determine the s-parameters of these devices at temperatures down to 77 K was presented by Laskar et al. /3,4/. However, for the combination of HEMT devices and high Tc superconductors investigations at lower temperatures have to be carried out. For this reason a microwave On-Wafer measurement setup at temperatures from 300 K down to 20 K has been developed. Both, s-parameter and noise measurements, can be performed in the frequency range from 45 MHz to 40 GHz and 2 GHz to 18 GHz, respectively. Using this equipment measurements on pseudomorphic and AlGaAs/GaAs FET will be presented.
{"title":"RF Investigations on HEMT's at Cryogenic Temperatures Down to 20 K using an On-Wafer Microwave Measurement Setup","authors":"H. Meschede, J. Albers, R. Reuter, J. Kraus, D. Peters, W. Brockerhoff, F. Tegude","doi":"10.1109/EUMA.1992.335732","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335732","url":null,"abstract":"Microwave measurements at cryogenic temperatures are very important to investigate the pronounced microwave performance of High Electron Mobility Transistors (HEMT) /1,2/. In order to perform an exact small signal analysis the On-Wafer measurement technique is an indispensable tool. An On-Wafer measurement setup to determine the s-parameters of these devices at temperatures down to 77 K was presented by Laskar et al. /3,4/. However, for the combination of HEMT devices and high Tc superconductors investigations at lower temperatures have to be carried out. For this reason a microwave On-Wafer measurement setup at temperatures from 300 K down to 20 K has been developed. Both, s-parameter and noise measurements, can be performed in the frequency range from 45 MHz to 40 GHz and 2 GHz to 18 GHz, respectively. Using this equipment measurements on pseudomorphic and AlGaAs/GaAs FET will be presented.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124170242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335713
J. Luy, F. Schaffler, M. Schlett
For the use in mobile systems high efficiency V-band IMPATT diodes for CW operation are developed. The design is based on a numerical large signal drift diffusion model. Flat-profile and low-high-low structures are simulated and the layers are grown by silicon molecular beam epitaxy. Solid circular and ring structures are fabricated. During the RF tests frequency dependent differences in the measured power levels using thermistor mounts and diode power sensors are observed: The RF tests yield a maximum efficiency of 17.6 % at 67 GHz with a double low-higlh-low diode measured with a manufacturer calibrated diode sensor. The efficiency drops to 13.5 % measured with a thermistor. With ring diodes high output powers (800 mW/59 GHz, no differences between different power sensors) at a very low junction temperature rise (140 K) can be obtained. At higher junction temperatures up to 1.4 Watt are achieved.
{"title":"17.6% Conversion Efficiency At 60 GHz with IMPATT Diodes ?","authors":"J. Luy, F. Schaffler, M. Schlett","doi":"10.1109/EUMA.1992.335713","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335713","url":null,"abstract":"For the use in mobile systems high efficiency V-band IMPATT diodes for CW operation are developed. The design is based on a numerical large signal drift diffusion model. Flat-profile and low-high-low structures are simulated and the layers are grown by silicon molecular beam epitaxy. Solid circular and ring structures are fabricated. During the RF tests frequency dependent differences in the measured power levels using thermistor mounts and diode power sensors are observed: The RF tests yield a maximum efficiency of 17.6 % at 67 GHz with a double low-higlh-low diode measured with a manufacturer calibrated diode sensor. The efficiency drops to 13.5 % measured with a thermistor. With ring diodes high output powers (800 mW/59 GHz, no differences between different power sensors) at a very low junction temperature rise (140 K) can be obtained. At higher junction temperatures up to 1.4 Watt are achieved.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127092660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335773
H. Zirath, I. Angelov, N. Rorsman
A millimeterwave resistive mixer based on a heterostructure field effect transistor (HFET) is described. A minimum conversion loss of 8 dB, including losses in the connectors, filters, substrates etc, is obtained in the frequency range 40-45 GHz. This is the highest frequency of operation reported for this type of mixer.
{"title":"A HFET millimeterwave resistive mixer","authors":"H. Zirath, I. Angelov, N. Rorsman","doi":"10.1109/EUMA.1992.335773","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335773","url":null,"abstract":"A millimeterwave resistive mixer based on a heterostructure field effect transistor (HFET) is described. A minimum conversion loss of 8 dB, including losses in the connectors, filters, substrates etc, is obtained in the frequency range 40-45 GHz. This is the highest frequency of operation reported for this type of mixer.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127783221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335804
A. Neubauer, T. Sporkmann, I. Wolff
A simple, analytical model for Dual Gate MESFETs is presented in this paper. The S-parameters of a Dual Gate MESFET are derived and the calculation of the equivalent small signal circuit is discussed. This model can efficiently be applied to the Investigation of the correlation between process tolerances and the design results. A typical application of such an investigation is shown by deviating e.g. the doping density in the channel. Finally, the comparison between calculations and simulations show, that this physically based, analytical model offers a sufficient compromise between accuracy and computational efficiency. The application of this model to microwave CAD workstations will easily allow to interface the process oriented characterization with RF circuit simulators.
{"title":"A Simple, Physics Based Dual Gate MESFET Model for CAD Applications in Microwave Frequencies","authors":"A. Neubauer, T. Sporkmann, I. Wolff","doi":"10.1109/EUMA.1992.335804","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335804","url":null,"abstract":"A simple, analytical model for Dual Gate MESFETs is presented in this paper. The S-parameters of a Dual Gate MESFET are derived and the calculation of the equivalent small signal circuit is discussed. This model can efficiently be applied to the Investigation of the correlation between process tolerances and the design results. A typical application of such an investigation is shown by deviating e.g. the doping density in the channel. Finally, the comparison between calculations and simulations show, that this physically based, analytical model offers a sufficient compromise between accuracy and computational efficiency. The application of this model to microwave CAD workstations will easily allow to interface the process oriented characterization with RF circuit simulators.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130108793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335826
J. Hyyppa, M. Hallikainen, J. Pulliainen, H. Hyyppa, K. Heiska
Forest inventory methods based on data acquired with an airborne ranging radar are discussed. The approach can be used to partly automate present labour-dominated forest inventory methods. Using these methods, the mean and dominant tree height can be measured with a standard deviation of 1 metre. The stem volume per hectare can be estimated with a relative accuracy of 15 % by effectively counting the height distribution of the trees and by calculating the centre of backscattered power from the forest canopy profile for a stand with a diameter of 40 metres. The methods have been developed using a helicopter-borne 8-channel ranging scattero-meter HUTSCAT (Helsinki University of Technology SCATterometer) which can measure a radar forest canopy profile (FCP) with a range resolution of 65 cm.
{"title":"Automation of Forest Inventory using Airborne Ranging Radar","authors":"J. Hyyppa, M. Hallikainen, J. Pulliainen, H. Hyyppa, K. Heiska","doi":"10.1109/EUMA.1992.335826","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335826","url":null,"abstract":"Forest inventory methods based on data acquired with an airborne ranging radar are discussed. The approach can be used to partly automate present labour-dominated forest inventory methods. Using these methods, the mean and dominant tree height can be measured with a standard deviation of 1 metre. The stem volume per hectare can be estimated with a relative accuracy of 15 % by effectively counting the height distribution of the trees and by calculating the centre of backscattered power from the forest canopy profile for a stand with a diameter of 40 metres. The methods have been developed using a helicopter-borne 8-channel ranging scattero-meter HUTSCAT (Helsinki University of Technology SCATterometer) which can measure a radar forest canopy profile (FCP) with a range resolution of 65 cm.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128984516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-10-01DOI: 10.1109/EUMA.1992.335865
K. Matsumura
Resonance characteristics of the Whispering Gallery (WG) Mode in a large dielectric disk is investigated by three dimensional analysis and X-band model experiments. In this study, disk diameter is more than ten times (for millimeter wave case) to hundred times (for optical wave case) as large as handling wavelength. Dielectric material of the disk is considered both loss-less and dissipative cases. Resonance frequencies of the WG Mode, Q-values of the resonance, radiation loss and dielectric loss in the disk are separately obtained.
{"title":"Whispering Gallery Mode Resonance in a Dielectric Disk for Millimeter Through Optical Wave Application","authors":"K. Matsumura","doi":"10.1109/EUMA.1992.335865","DOIUrl":"https://doi.org/10.1109/EUMA.1992.335865","url":null,"abstract":"Resonance characteristics of the Whispering Gallery (WG) Mode in a large dielectric disk is investigated by three dimensional analysis and X-band model experiments. In this study, disk diameter is more than ten times (for millimeter wave case) to hundred times (for optical wave case) as large as handling wavelength. Dielectric material of the disk is considered both loss-less and dissipative cases. Resonance frequencies of the WG Mode, Q-values of the resonance, radiation loss and dielectric loss in the disk are separately obtained.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122849452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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