Pub Date : 2019-12-01DOI: 10.1109/BICOP48819.2019.9059584
P. Singaravelu, Uday Gowda, Changyu Hu, Sharon M. Butler, G. Devarapu, S. Hegarty, L. O’Faolain
Here, we report a novel approach for the intensity modulation of an external cavity laser based on coupled silicon photonic crystal cavities. The cavity resonance was detuned via integrated p-n junction and > 5 dB extinction ratio in transmission was obtained.
{"title":"Coupled Photonic Crystal Cavity Architecture for Intensity Modulation","authors":"P. Singaravelu, Uday Gowda, Changyu Hu, Sharon M. Butler, G. Devarapu, S. Hegarty, L. O’Faolain","doi":"10.1109/BICOP48819.2019.9059584","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059584","url":null,"abstract":"Here, we report a novel approach for the intensity modulation of an external cavity laser based on coupled silicon photonic crystal cavities. The cavity resonance was detuned via integrated p-n junction and > 5 dB extinction ratio in transmission was obtained.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134130185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-12-01DOI: 10.1109/BICOP48819.2019.9059589
Hitomi Matsui, S. Yakabe, T. Ishigure
We have developed the Mosquito method for fabricating polymer optical waveguides. By using the Mosquito method, three-dimensional array of circular cores with graded-index (GI) profile can be formed. In this paper, to realize an effective coupling element for multicore fibers (MCF) and singlemode fibers, fan-in/out polymer optical waveguides are focused. For low-loss fan-in/out waveguide, the Mosquito method is applied where the fabrication conditions are investigated to improve the optical properties in multiple cores. Furthermore, fan-in/out structure for 7-core MCF is successfully fabricated.
{"title":"Fabrication for Single-Mode Core Fan-in/Out Polymer Optical Waveguide using the Mosquito Method","authors":"Hitomi Matsui, S. Yakabe, T. Ishigure","doi":"10.1109/BICOP48819.2019.9059589","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059589","url":null,"abstract":"We have developed the Mosquito method for fabricating polymer optical waveguides. By using the Mosquito method, three-dimensional array of circular cores with graded-index (GI) profile can be formed. In this paper, to realize an effective coupling element for multicore fibers (MCF) and singlemode fibers, fan-in/out polymer optical waveguides are focused. For low-loss fan-in/out waveguide, the Mosquito method is applied where the fabrication conditions are investigated to improve the optical properties in multiple cores. Furthermore, fan-in/out structure for 7-core MCF is successfully fabricated.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121060241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-12-01DOI: 10.1109/BICOP48819.2019.9059592
G. De Paoli, S. L. Jantzen, T. D. Bucio, I. Skandalos, C. Holmes, Peter G. R. Smith, M. Milosevic, F. Gardes
We demonstrated the possibility of trimming the operating wavelength of nitrogen-rich silicon nitride racetrack resonators by exposing the devices to an ultraviolet laser. The results revealed that in a few seconds only, the resonant wavelength of fabricated devices could be tuned to any point within a free spectral range. This technique can also be applied to trim the response of any other silicon photonic device based on nitrogen-rich silicon nitride.
{"title":"Post Fabrication Permanent Laser Trimming of Silicon Nitride Photonic Devices","authors":"G. De Paoli, S. L. Jantzen, T. D. Bucio, I. Skandalos, C. Holmes, Peter G. R. Smith, M. Milosevic, F. Gardes","doi":"10.1109/BICOP48819.2019.9059592","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059592","url":null,"abstract":"We demonstrated the possibility of trimming the operating wavelength of nitrogen-rich silicon nitride racetrack resonators by exposing the devices to an ultraviolet laser. The results revealed that in a few seconds only, the resonant wavelength of fabricated devices could be tuned to any point within a free spectral range. This technique can also be applied to trim the response of any other silicon photonic device based on nitrogen-rich silicon nitride.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"44 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120920489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-12-01DOI: 10.1109/BICOP48819.2019.9059588
S. Bobba
Graphene's electronic properties come from its halffilled band structure formed from the $pi$ -bond which hybridizes together to form the $pi$-band and $pi^{ast}$-bands. Due to its almost zero bandgap, Graphene can be tuned as a metal by applying a chemical potential to the 2D material, as it has high electron mobility at atomic level thickness. Using this property, Graphene was tuned to chemical potentials from 350meV − 500meV, where it showed semi-conductor behaviour below 400meV and metallic behaviour above 450meV. The Group III and V elements of the periodic table combine well to bond with Graphene due to their sp2 hybridisation and hexagonal crystalline bonding, and this property was further used in building a mono-layer Graphene waveguide structure using silicon nitride as the outer core, silica as the substrate and air as the cladding, to further investigate the behaviour of Graphene as a metal. The modal solutions in this structure were obtained by solving the full-vectorial H-field formulation using the finite element method (FEM) which showed the hybrid plasmonic mode generation at the silicon nitride-graphene-silica interface, thereby confirming the behaviour of Graphene as a metal at 450meV without its negative dielectric constant. This however contradicts the surface plasmon theory which states that at a metal-dielectric surface, surface plasmon polaritons (SPP's) are only formed if k1/k2 = −ε1/ε2 is satisfied. This work needs further experimental evaluation to confirm the behaviour of Graphene as a metal without the negative dielectric constant at 450meV as it would then open doors to a new understanding of solid-state physics, thereby leading to new applications in this field of science.
{"title":"Graphene as a Metal without the Negative Dielectric Constant in the Designed Mono – Layer Graphene Waveguide at a Chemical Potential of 450meV","authors":"S. Bobba","doi":"10.1109/BICOP48819.2019.9059588","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059588","url":null,"abstract":"Graphene's electronic properties come from its halffilled band structure formed from the $pi$ -bond which hybridizes together to form the $pi$-band and $pi^{ast}$-bands. Due to its almost zero bandgap, Graphene can be tuned as a metal by applying a chemical potential to the 2D material, as it has high electron mobility at atomic level thickness. Using this property, Graphene was tuned to chemical potentials from 350meV − 500meV, where it showed semi-conductor behaviour below 400meV and metallic behaviour above 450meV. The Group III and V elements of the periodic table combine well to bond with Graphene due to their sp2 hybridisation and hexagonal crystalline bonding, and this property was further used in building a mono-layer Graphene waveguide structure using silicon nitride as the outer core, silica as the substrate and air as the cladding, to further investigate the behaviour of Graphene as a metal. The modal solutions in this structure were obtained by solving the full-vectorial H-field formulation using the finite element method (FEM) which showed the hybrid plasmonic mode generation at the silicon nitride-graphene-silica interface, thereby confirming the behaviour of Graphene as a metal at 450meV without its negative dielectric constant. This however contradicts the surface plasmon theory which states that at a metal-dielectric surface, surface plasmon polaritons (SPP's) are only formed if k1/k2 = −ε1/ε2 is satisfied. This work needs further experimental evaluation to confirm the behaviour of Graphene as a metal without the negative dielectric constant at 450meV as it would then open doors to a new understanding of solid-state physics, thereby leading to new applications in this field of science.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129722318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-12-01DOI: 10.1109/BICOP48819.2019.9059594
P. Singaravelu, C. Devarapu, S. Schulz, S. Hegarty
A low-loss, compact, two-tier spot size-converter (SSC) has been designed and demonstrated to couple light between silicon (Si) and silicon nitride (SiNx) platforms. The high index contrast between the materials is accomplished by matching the optical mode impedance of Si and SiNx. This allows the achievement of record low coupling loss of 0.058 ± 0.01 dB per transition at 1525 nm. The geometric parameters of the vertically integrated SSC were optimized to ensure the adiabatic transition of the optical mode from Si-to-SiNx and vice-versa. The SSC converter shows excellent broadband coupling over 100 nm bandwidth at telecom wavelengths.
{"title":"A Two-Tier Inverse Taper based Vertical Coupler for Photonic Integrated Circuits","authors":"P. Singaravelu, C. Devarapu, S. Schulz, S. Hegarty","doi":"10.1109/BICOP48819.2019.9059594","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059594","url":null,"abstract":"A low-loss, compact, two-tier spot size-converter (SSC) has been designed and demonstrated to couple light between silicon (Si) and silicon nitride (SiNx) platforms. The high index contrast between the materials is accomplished by matching the optical mode impedance of Si and SiNx. This allows the achievement of record low coupling loss of 0.058 ± 0.01 dB per transition at 1525 nm. The geometric parameters of the vertically integrated SSC were optimized to ensure the adiabatic transition of the optical mode from Si-to-SiNx and vice-versa. The SSC converter shows excellent broadband coupling over 100 nm bandwidth at telecom wavelengths.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124307056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-12-01DOI: 10.1109/BICOP48819.2019.9059586
P. Panduranga, A. Abdou, J. Richter, E. Thomas, S. Mandal, Z. Ren, Rasmus H. Pedersen, O. Williams, J. Witzens, M. Nezhad
A hybrid diamond/silicon air-clad ridge waveguide platform is demonstrated. The air-clad structure coupled with the wide transmission window of diamond can allow for the use of this architecture over a large wavelength range, especially for the longer infrared wavelengths. In order to provide vertical confinement, the silicon substrate was isotropically etched using SF6 plasma to create undercut diamond films. An in-depth analysis of the etch characteristics of this process was performed to highlight its potential to replace wet isotropic etching or XeF2 isotropic vapour phase etching techniques. The performance of the waveguide at 1550 nm was measured, and yielded an average loss of 4.67 +/- 0.47 dB/mm.
{"title":"Hybrid Diamond/Silicon Suspended Integrated Photonic Platform using SF6 Isotropic Etching","authors":"P. Panduranga, A. Abdou, J. Richter, E. Thomas, S. Mandal, Z. Ren, Rasmus H. Pedersen, O. Williams, J. Witzens, M. Nezhad","doi":"10.1109/BICOP48819.2019.9059586","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059586","url":null,"abstract":"A hybrid diamond/silicon air-clad ridge waveguide platform is demonstrated. The air-clad structure coupled with the wide transmission window of diamond can allow for the use of this architecture over a large wavelength range, especially for the longer infrared wavelengths. In order to provide vertical confinement, the silicon substrate was isotropically etched using SF6 plasma to create undercut diamond films. An in-depth analysis of the etch characteristics of this process was performed to highlight its potential to replace wet isotropic etching or XeF2 isotropic vapour phase etching techniques. The performance of the waveguide at 1550 nm was measured, and yielded an average loss of 4.67 +/- 0.47 dB/mm.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116974483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-12-01DOI: 10.1109/BICOP48819.2019.9059585
Hua Fan, Jiangmin Mao, Q. Feng, Xu Qi, Dagang Li, Lang Fen, Daqian Hu, Xiaopeng Diao, R. Ghannam, H. Heidari
At present, there are many complex and diverse bus interface standards in the field of sensor measurement and control, which leads that different sensors unable to be compatible with different field networks, thus increasing the difficulty of data acquisition and processing. In order to improve the compatibility and the intelligent level of sensors, in this work, a novel intelligent sensor interface model defined by IEEE1451.2 standard is proposed. Finally, the self-recognition, plug and play (PNP) functions are verified on FPGA platform.
{"title":"The Design of Intelligent Sensor Interface Circuit based on 1451.2","authors":"Hua Fan, Jiangmin Mao, Q. Feng, Xu Qi, Dagang Li, Lang Fen, Daqian Hu, Xiaopeng Diao, R. Ghannam, H. Heidari","doi":"10.1109/BICOP48819.2019.9059585","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059585","url":null,"abstract":"At present, there are many complex and diverse bus interface standards in the field of sensor measurement and control, which leads that different sensors unable to be compatible with different field networks, thus increasing the difficulty of data acquisition and processing. In order to improve the compatibility and the intelligent level of sensors, in this work, a novel intelligent sensor interface model defined by IEEE1451.2 standard is proposed. Finally, the self-recognition, plug and play (PNP) functions are verified on FPGA platform.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125532367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-03DOI: 10.1109/BICOP48819.2019.9059574
J. Kirdoda, D. Dumas, R. Millar, M. Mirza, D. Paul, K. Kuzmenko, P. Vines, Z. Greener, G. Buller
High efficiency single photon avalanche detectors (SPADs) based on the Ge-on-Si material system are a promising emerging technology for high sensitivity optical detection in the short-wave infrared region. Here we demonstrate record single photon detection efficiencies of 38% at 1310nm with an operating temperature of 125K. This was achieved using a novel planar geometry which allowed us to achieve an NEPs of 3×10−16 WHz−1/2 and reduced afterpulsing when compared to InGaAs/InP based SPADs operated in nominally identical conditions.
{"title":"Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors","authors":"J. Kirdoda, D. Dumas, R. Millar, M. Mirza, D. Paul, K. Kuzmenko, P. Vines, Z. Greener, G. Buller","doi":"10.1109/BICOP48819.2019.9059574","DOIUrl":"https://doi.org/10.1109/BICOP48819.2019.9059574","url":null,"abstract":"High efficiency single photon avalanche detectors (SPADs) based on the Ge-on-Si material system are a promising emerging technology for high sensitivity optical detection in the short-wave infrared region. Here we demonstrate record single photon detection efficiencies of 38% at 1310nm with an operating temperature of 125K. This was achieved using a novel planar geometry which allowed us to achieve an NEPs of 3×10−16 WHz−1/2 and reduced afterpulsing when compared to InGaAs/InP based SPADs operated in nominally identical conditions.","PeriodicalId":339012,"journal":{"name":"2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133082588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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