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Study on the Failure Mechanism of Antioxidant on Copper Foils with Growing Hexagonal Boron Nitride Films 生长六方氮化硼薄膜的铜箔抗氧化剂失效机理研究
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-10 DOI: 10.1021/acs.chemmater.4c00986
Mingyuan Wang*, Hui Shi, Shahid Hussain, Guiwu Liu, Shuang-Ying Lei* and Neng Wan*, 

Recently, hexagonal boron nitride (h-BN) films have been considered as an effective alternative material for preventing metal oxidation due to its electrical insulating properties and ultrathin thickness. However, there are some issues when using synthesized h-BN on metal protection, especially because its antioxidation performance will decrease after a period of time. To address this problem, the h-BN films were synthesized at commercial Cu foil by the chemical vapor deposition (CVD) method, and the failure mechanism is proposed by experimental and density functional theory (DFT) calculations. The results indicate that a twin boundary with 558-N/B structures would be formed when two different orientation domains meet, and the h-BN domains can seamlessly stitch together for the same orientations or h-BN domains located in the different adjacent single atomic layer. Next, the failure mechanism of the antioxidant is considered and the synthesized h-BN at the Cu foil was treated by thermal oxidation, and we found the generation of Cu2O/CuO induced the decoupling phenomenon between h-BN and Cu. Further DFT calculations indicate that the presence of twin boundaries and point defects can also facilitate the diffusion of the O atom, and h-BN edges terminated with H can promote the diffusion of the O atom and the diffusion and decomposition of H2O molecules more than Cu(111) passivated h-BN, which accelerates the oxidation of Cu foil, leading to the formation of Cu2O/CuO. This process increases the distance between h-BN and Cu and decreases the amount of Bader transfer and orbital hybridization of B, N, and Cu atoms between h-BN and Cu foil, thereby reducing the coupling between h-BN and Cu foil. This study can provide experimental and theoretical explanations for the failure mechanism of h-BN films in protecting metals from oxidation.

最近,六方氮化硼(h-BN)薄膜因其电绝缘特性和超薄厚度而被认为是防止金属氧化的有效替代材料。然而,在使用合成的 h-BN 保护金属时也存在一些问题,特别是在使用一段时间后,其抗氧化性能会下降。针对这一问题,我们采用化学气相沉积(CVD)方法在商用铜箔上合成了 h-BN 薄膜,并通过实验和密度泛函理论(DFT)计算提出了其失效机理。结果表明,当两个不同取向的畴相遇时,会形成具有 558-N/B 结构的孪晶边界,对于相同取向或位于不同相邻单原子层中的 h-BN 畴,可以无缝拼接在一起。接下来,我们考虑了抗氧化剂的失效机制,并对铜箔上合成的 h-BN 进行了热氧化处理,发现 Cu2O/CuO 的生成诱导了 h-BN 与铜之间的解耦现象。进一步的 DFT 计算表明,孪晶边界和点缺陷的存在也能促进 O 原子的扩散,与 Cu(111) 钝化的 h-BN 相比,以 H 终止的 h-BN 边缘更能促进 O 原子的扩散以及 H2O 分子的扩散和分解,从而加速了 Cu 箔的氧化,导致 Cu2O/CuO 的形成。这一过程增加了 h-BN 与 Cu 之间的距离,减少了 h-BN 与 Cu 箔之间 B、N 和 Cu 原子的巴德转移和轨道杂化量,从而降低了 h-BN 与 Cu 箔之间的耦合。这项研究可为 h-BN 薄膜保护金属免受氧化的失效机制提供实验和理论解释。
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引用次数: 0
Microscopic Insight into Ruthenium Exsolution from LaFe0.9Ru0.1O3 Perovskite 从显微镜观察 LaFe0.9Ru0.1O3 包晶中的钌溶出现象
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-10 DOI: 10.1021/acs.chemmater.4c01084
Yu Wang, Paul Paciok, Lukas Pielsticker, Wei Wang, Alexander Spriewald Luciano, Min Ding, Lorena Glatthaar, Walid Hetaba, Yanglong Guo*, Jaime Gallego*, Bernd M. Smarsly* and Herbert Over*, 

Metal exsolution is a smart strategy that allows modification and enrichment of a material’s surface with highly active catalytic phases, thus offering the possibility to fine-tune the surface chemical composition. We study the exsolution of Ru from a perovskite solid solution LaFe0.9Ru0.1O3 (LFRO) to form Ru nanoparticles and their passivation by a conforming LaOx layer by applying a variety of in situ techniques, including TEM and XPS, in combination with ex situ infrared and Raman spectroscopy, but most notably by utilizing the catalytic propane combustion to probe the formation of the passivating LaOx layer. During the Ru exsolution process, Ru3+ in LFRO is reduced first to the Ruβ species and subsequently into a Ru0 species, evidencing the exsolution of Ru particle. The transformation of Ru3+ → Ruβ proceeds already below 300 °C and is correlated with the formation of oxygen vacancies under a reductive atmosphere. The subsequent transformation of Ruβ toward Ru0 needs at least a reduction temperature of 400 °C that is likely to be determined by the diffusion of Ru3+ from the near-surface region of LFRO toward the surface. Only above 600 °C ruthenium cations from the bulk of LFRO are exsolved, leading to the further growth of Ru particles. Around 600 °C, the exsolution of Ru particles is accompanied by the formation of a covering LaOx layer. We propose that La segregation and precipitation as surface LaOx are driven by the overstoichiometry of La in LFRO after Ru exsolution.

金属外溶解是一种聪明的策略,可以用高活性催化相来修饰和丰富材料表面,从而提供微调表面化学成分的可能性。我们研究了包晶固体溶液 LaFe0.9Ru0.1O3 (LFRO) 中 Ru 的外溶形成 Ru 纳米粒子及其被符合要求的 LaOx 层钝化的过程,采用了多种原位技术,包括 TEM 和 XPS,并结合原位红外和拉曼光谱,但最值得注意的是利用丙烷催化燃烧来探测钝化 LaOx 层的形成。在 Ru 外溶解过程中,LFRO 中的 Ru3+ 首先被还原成 Ruβ 物种,随后被还原成 Ru0 物种,证明了 Ru 粒子的外溶解。Ru3+ → Ruβ 的转变在 300 °C 以下就已开始,这与还原气氛下氧空位的形成有关。随后 Ruβ 向 Ru0 的转化至少需要 400 °C 的还原温度,这可能是由 Ru3+ 从 LFRO 的近表面区域向表面扩散决定的。只有在 600 °C以上,LFRO 主体中的钌阳离子才会溶出,从而导致 Ru 颗粒的进一步生长。600 °C左右,伴随着Ru颗粒的溶出,形成了一个LaOx覆盖层。我们认为,在 Ru 溶出后,La 在 LFRO 中过高的化学计量促使 La 偏析并沉淀为表面 LaOx。
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引用次数: 0
Discovery of Ternary Antimonides A–Al–Sb (A = Rb or Cs) with Desired Structural Motifs Guided by Machine Learning 在机器学习指导下发现具有所需结构基团的 A-Al-Sb(A = Rb 或 Cs)三元锑化物
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-09 DOI: 10.1021/acs.chemmater.4c00937
Bryan Owens-Baird, Volodymyr Gvozdetskyi, Arka Sarkar, Balaranjan Selvaratnam, Arthur Mar* and Kirill Kovnir*, 

Specific structural motifs in inorganic solids are often related to their targeted physical properties. For many classes of solids, such as Zintl phases and polar intermetallics, the crystal structures are diverse and not easy to predict. Various antimonides that are potential thermoelectric materials were proposed to be synthesizable on the basis of their estimated formation energies. Their structures were broadly classified as clathrate, channel, layered, or network through a machine learning model trained on existing ternary phases and features based on elemental properties using the sure independence screening and sparsifying operator algorithm. Through experimental validation, three new ternary antimonides were synthesized and confirmed to form layered structures: tetragonal RbAlSb2 and CsAlSb2, which are isopointal but not isotypic to LiBSi2; and monoclinic Rb2Al2Sb3, which adopts the Na2Al2Sb3-type structure. Reinvestigation of the related compound Cs2In2Sb3 revealed a low thermal conductivity and p-type semiconducting behavior.

无机固体的特定结构模式往往与其目标物理性质有关。对于 Zintl 相和极性金属间化合物等许多类别的固体来说,晶体结构多种多样,不易预测。根据估计的形成能量,人们提出了可合成潜在热电材料的各种锑化物。通过使用确定的独立性筛选和稀疏算子算法,根据现有的三元相和基于元素特性的特征训练出的机器学习模型,将它们的结构大致分为凝块状、通道状、层状或网络状。通过实验验证,合成了三种新的三元锑化物,并确认它们形成了层状结构:四方RbAlSb2和CsAlSb2,它们与LiBSi2同点但不同型;以及单斜Rb2Al2Sb3,它采用了Na2Al2Sb3型结构。对相关化合物 Cs2In2Sb3 的再研究表明,该化合物具有较低的热导率和 p 型半导体行为。
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引用次数: 0
Effects of Plasma Reactants on Atomic Layer Deposition of Lithium Phosphate and Lithium Phosphorus Oxynitride Electrolyte Films 等离子反应物对磷酸锂和氧化磷锂电解质薄膜原子层沉积的影响
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-07 DOI: 10.1021/acs.chemmater.4c00960
Tohru Tsuruoka*, Samapika Mallik, Takuji Tsujita, Yuu Inatomi and Kazuya Terabe, 

The effects of plasma reactants on the plasma-assisted atomic layer deposition (ALD) of lithium phosphate are investigated in relation to the fabrication of high-quality lithium phosphorus oxynitride (LiPON) thin films for potential use as a solid-state electrolyte (SSE) in both microbatteries and neuromorphic devices. Our ALD processes enable the incorporation of nitrogen into a lithium phosphate matrix, using lithium tert-butoxide and tris(dimethylamino)phosphine as the lithium and phosphorus precursors, respectively, in a deposition temperature window of 220–300 °C. With O2 plasma, polycrystalline lithium phosphate films, with a relatively well-arranged pyrophosphate, are deposited. Amorphous LiPON films, with a mixture of pyrophosphates and orthophosphates, are obtained when Ar or NH3 plasma is used. When the NH3 flow rate increases, the nitrogen composition increases up to ∼13%, while residual carbon is kept below a few percent. For a Li2.5PO1.9N0.8 film deposited at 300 °C with NH3 plasma, the ionic conductivity is measured as 1.65 ± 0.42 × 10–6 S/cm at 25 °C, with an activation energy of 0.66 eV. This conductivity is the highest value of any ALD LiPON film reported to date. Our ALD processes exhibit a high level of controllability of the molecular structures of the phosphorus oxynitride matrix with high ionic conductivity, which makes them suitable for realizing high-performance Li SSE thin films.

我们研究了等离子体反应物对等离子体辅助磷化锂原子层沉积(ALD)的影响,这些等离子体反应物与高质量磷氧化物(LiPON)薄膜的制造有关,这种薄膜可能用作微型电池和神经形态设备中的固态电解质(SSE)。我们的 ALD 工艺能在 220-300 °C 的沉积温度窗口内,使用叔丁醇锂和三(二甲基氨基)膦分别作为锂和磷的前驱体,将氮掺入磷酸锂基体中。在氧气等离子体的作用下,沉积出了多晶磷酸锂薄膜,其中的焦磷酸盐排列相对整齐。在使用 Ar 或 NH3 等离子体时,可获得无定形的磷酸锂薄膜,其中包含焦磷酸盐和正磷酸盐的混合物。当 NH3 的流速增加时,氮的成分增加到 13%,而残碳则保持在百分之几以下。使用 NH3 等离子体在 300 °C 下沉积的 Li2.5PO1.9N0.8 薄膜,在 25 °C 下的离子电导率为 1.65 ± 0.42 × 10-6 S/cm,活化能为 0.66 eV。这一电导率是迄今所报道的 ALD LiPON 薄膜中的最高值。我们的 ALD 工艺对具有高离子电导率的氧氮化磷基质的分子结构具有很高的可控性,因此适合实现高性能的锂 SSE 薄膜。
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引用次数: 0
Stabilities of Charge Disproportionated States by Successive Charge Transitions of Mixed and Unusually High Valence Fe3.5+ in LnBaFe2O6 (Ln = Pr, Sm) LnBaFe2O6 (Ln = Pr,Sm)中混合和异常高价的 Fe3.5+ 通过连续电荷转换产生的电荷比例失调状态的稳定性
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-07 DOI: 10.1021/acs.chemmater.4c00578
Makoto Iihoshi, Masato Goto and Yuichi Shimakawa*, 

A-site layer-ordered double perovskites LnBaFe2O6 (Ln = Pr, Sm) were synthesized by topotactic ozone oxidation, and their successive phase transition behaviors were investigated. The results of differential scanning calorimetry, X-ray powder diffraction, Mössbauer spectroscopy, and magnetization measurements suggested that both compounds exhibited successive charge transitions accompanied by complicated changes in physical properties, involving the charge, lattice, and spin degrees of freedom. For SmBaFe2O6, the first-order structural and magnetic transition related to the first charge disproportionation transition (2Fe3.5+ → Fe3+ + Fe4+) occurred at a higher temperature than that of PrBaFe2O6, while the second-order magnetic transition, which was induced by the second charge disproportionation (Fe4+ → 0.5Fe3+ + 0.5Fe5+) was observed at a lower temperature. The obtained results suggest that the metastable charge-disproportionated state (Fe3+ + Fe4+) of LnBaFe2O6 is more stabilized when the lanthanoid ion at the A-site is smaller.

通过拓扑臭氧氧化法合成了A位层有序双包晶LnBaFe2O6(Ln = Pr, Sm),并研究了它们的连续相变行为。差示扫描量热法、X 射线粉末衍射、莫斯鲍尔光谱和磁化测量的结果表明,这两种化合物都表现出连续的电荷转换,并伴随着复杂的物理性质变化,涉及电荷、晶格和自旋自由度。对于 SmBaFe2O6,与第一电荷比例失调转变(2Fe3.5+ → Fe3+ + Fe4+)相关的一阶结构和磁性转变发生在比 PrBaFe2O6 更高的温度下,而由第二电荷比例失调诱发的二阶磁性转变(Fe4+ → 0.5Fe3+ + 0.5Fe5+)则发生在更低的温度下。所得结果表明,当 A 位上的镧系离子较小时,LnBaFe2O6 的逸散电荷比例失调态(Fe3+ + Fe4+)更加稳定。
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引用次数: 0
Enhanced Surface Passivation of InP/ZnSe Quantum Dots by Zinc Acetate Exposure 醋酸锌对 InP/ZnSe 量子点表面钝化的增强作用
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-07 DOI: 10.1021/acs.chemmater.4c00492
Pieter Schiettecatte*, Luca Giordano, Ben Cruyssaert, Guillaume Bonifas, Norick De Vlamynck, Hannes Van Avermaet, Qiang Zhao, André Vantomme, Celine Nayral, Fabien Delpech and Zeger Hens*, 

Indium phosphide (InP) quantum dots (QDs) represent the main alternative to restricted Cd-based QDs in lighting and display applications. Typically, the photoluminescence (PL) of InP QDs is increased by overgrowth of a zinc chalcogenide shell, consisting of ZnSe and/or ZnS. Here, we show that the outer surface of InP/ZnSe QDs synthesized using aminophosphine-based chemistry is passivated by oleylamine and zinc chloride, while zinc oleate, used as a precursor for shell growth, is absent from the surface. The resulting low surface concentration of zinc salts leads to an incomplete passivation of undercoordinated surface chalcogenides, a known source of trap states. We demonstrate that a subsequent exposure of the QDs to zinc acetate, a mild Lewis acid, drastically enhances the PL quantum yield (PLQY) from approximately 40% before to 90% after exposure. This outcome is highly reproducible and can be realized either through an in situ exposure by adding zinc acetate to the reaction mixture or an ex situ exposure on purified InP-based QDs. Given that zinc chalcogenides are frequently used as an outer shell for QDs, this method of passivating undercoordinated chalcogenides holds significant promise for enhancing the PLQY across a wide array of core/shell QD systems.

在照明和显示应用中,磷化铟(InP)量子点(QDs)是受限制的镉基 QDs 的主要替代品。通常情况下,InP QD 的光致发光(PL)是通过叠层生长由 ZnSe 和/或 ZnS 组成的铬化锌外壳来提高的。在这里,我们展示了使用基于氨基膦的化学方法合成的 InP/ZnSe QD 外表面被油胺和氯化锌钝化,而作为外壳生长前体的油酸锌则不在表面。因此,锌盐的表面浓度较低,导致配位不足的表面钙化物无法完全钝化,而钙化物是已知的陷阱态来源。我们证明,随后将 QDs 暴露于醋酸锌(一种温和的路易斯酸),可大幅提高 PL 量子产率(PLQY),从暴露前的约 40% 提高到暴露后的 90%。这一结果具有很高的可重复性,既可以通过在反应混合物中加入醋酸锌进行原位暴露,也可以通过在纯化的 InP 基 QDs 上进行异位暴露来实现。鉴于铬化锌经常被用作 QD 的外壳,这种钝化配位不足的铬化锌的方法有望提高各种核/壳 QD 系统的 PLQY。
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引用次数: 0
Two Spacers, One Perovskite: Integrating Ruddlesden–Popper and Dion–Jacobson Halide Perovskites 两种间隔物,一种过氧化物:整合 Ruddlesden-Popper 和 Dion-Jacobson 卤化物包光体
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-06 DOI: 10.1021/acs.chemmater.4c00907
Jared D. Fletcher, Aaron M. Schankler, Cheng Liu, Yi Yang, Claudia Pereyra Huelmo, Craig C. Laing, Evan H. Oriel, Lin X. Chen, Richard D. Schaller, Edward H. Sargent, Andrew M. Rappe and Mercouri G. Kanatzidis*, 

Hybrid organic–inorganic perovskites are a rapidly developing class of materials due to their desirable properties for optoelectronic applications such as their ease of synthesis, solution-processable film formation, tunable band gap, strong photoluminescence, good charge carrier mobilities, and high defect tolerance. We present a novel 2D perovskite motif that seamlessly integrates the structural elements from both Ruddlesden–Popper and Dion–Jacobson halide perovskites. We demonstrate the incorporation of two different organic spacer cations in an ordered manner in 5 novel 2D perovskite iodide materials. Both a cyclic diammonium cation 3-(aminomethyl)piperidinium (3AMP) and a linear alkyl monoammonium cation (Cn = CnH2n+4N, n = 4–8) are present in distinct alternating layers, making the new series (Cn)2(3AMP)[PbI4]2. The crystallization of these materials was optimized through careful temperature control to obtain precise crystal structures via single-crystal X-ray diffraction (XRD) which confirmed the presence of the two cations in distinct layers. The influence of the two spacers on optical properties including the band gaps and photoluminescence spectra are found to more closely resemble (3AMP)PbI4 than (Cn)2PbI4, which can be attributed to the amount of distortion imposed by the 3AMP spacer on the lead iodide layers. The findings are supported by density functional theory calculations. The strong photoelectric response of solution-processed thin films shows the potential of these materials in photodetectors or photovoltaics. This unprecedented amalgamation of RP–DJ in (Cn)2(3AMP)[PbI4]2 in a structurally ordered fashion suggests a potential vastly underexplored phase space of 2D perovskites in which there are chemically different spacers in distinct layers of the structure, providing an additional parameter to tune perovskite properties.

有机-无机混合包晶是一类发展迅速的材料,因为它们具有光电应用的理想特性,如易于合成、可溶液加工成膜、可调带隙、强光致发光、良好的电荷载流子迁移率和高缺陷耐受性。我们提出了一种新型二维过氧化物晶型,它完美地整合了 Ruddlesden-Popper 和 Dion-Jacobson 卤化物过氧化物晶型的结构元素。我们展示了在 5 种新型二维碘化包晶材料中有序地加入两种不同的有机间隔阳离子。环状二铵阳离子 3-(氨甲基)哌啶鎓(3AMP)和线性烷基一铵阳离子(Cn = CnH2n+4N, n = 4-8)以明显的交替层存在,从而形成了新系列 (Cn)2(3AMP)[PbI4]2。这些材料的结晶经过精心的温度控制进行了优化,通过单晶 X 射线衍射 (XRD) 获得了精确的晶体结构,证实了两种阳离子存在于不同的层中。研究发现,两种间隔物对光学特性(包括带隙和光致发光光谱)的影响更接近于 (3AMP)PbI4,而不是 (Cn)2PbI4,这可归因于 3AMP 间隔物对碘化铅层造成的变形量。密度泛函理论计算支持了上述发现。溶液加工薄膜的强光电响应显示了这些材料在光电探测器或光伏领域的潜力。RP-DJ 在 (Cn)2(3AMP)[PbI4]2中以一种结构有序的方式前所未有地结合在一起,这表明二维包晶石的相空间存在着巨大的潜力,而这一空间尚未被充分开发,在结构的不同层中存在着化学性质不同的间隔物,这为调整包晶石特性提供了一个额外的参数。
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引用次数: 0
Crystalline Antimony Selenide Thin Films for Optoelectronics through Photonic Curing 通过光子固化实现光电子学用结晶硒化锑薄膜
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-06 DOI: 10.1021/acs.chemmater.4c00540
Udari Wijesinghe, William D. Tetlow, Pietro Maiello, Nicole Fleck, Graeme O’Dowd, Neil S. Beattie, Giulia Longo* and Oliver S. Hutter*, 

Thermal annealing is the most common postdeposition technique used to crystallize antimony selenide (Sb2Se3) thin films. However, due to slow processing speeds and a high energy cost, it is incompatible with the upscaling and commercialization of Sb2Se3 for future photovoltaics. Herein, for the first time, a fast-annealing technique that uses millisecond light pulses to deliver energy to the sample is adapted to cure thermally evaporated Sb2Se3 films. This study demonstrates how photonic curing (PC) conditions affect the outcome of Sb2Se3 phase conversion from amorphous to crystalline by evaluating the films’ crystalline, morphological, and optical properties. We show that Sb2Se3 is readily converted under a variety of different conditions, but the zone where suitable films for optoelectronic applications are obtained is a small region of the parameter space. Sb2Se3 annealing with short pulses (<3 ms) shows significant damage to the sample, while using longer pulses (>5 ms) and a 4–5 J cm–2 radiant energy produces (211)- and (221)-oriented crystalline Sb2Se3 with minimal to no damage to the sample. A proof-of-concept photonically cured Sb2Se3 photovoltaic device is demonstrated. PC is a promising annealing method for large-area, high-throughput annealing of Sb2Se3 with various potential applications in Sb2Se3 photovoltaics.

热退火是硒化锑(Sb2Se3)薄膜结晶最常用的沉积后技术。然而,由于处理速度慢、能耗高,它与未来光伏领域 Sb2Se3 的升级和商业化不相适应。在本文中,我们首次采用了一种快速退火技术,利用毫秒级光脉冲向样品传递能量,以固化热蒸发 Sb2Se3 薄膜。本研究通过评估薄膜的晶体、形态和光学特性,展示了光子固化 (PC) 条件如何影响 Sb2Se3 从非晶到晶体的相变结果。我们的研究表明,在各种不同的条件下,Sb2Se3 很容易发生转化,但获得适合光电应用的薄膜的区域只是参数空间的一小部分。使用短脉冲(3 毫秒)进行 Sb2Se3 退火会对样品造成严重破坏,而使用长脉冲(5 毫秒)和 4-5 J cm-2 的辐射能则能产生 (211)- 和 (221)- 取向的晶体 Sb2Se3,对样品的破坏极小甚至没有。演示了一个概念验证型光固化 Sb2Se3 光伏设备。PC 是一种很有前途的退火方法,可用于 Sb2Se3 的大面积、高通量退火,在 Sb2Se3 光伏领域有多种潜在应用。
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引用次数: 0
Thermally Induced Reversible Fluorochromism by Self-Trapped Excitonic Emission in a Two-Dimensional Hybrid Copper(I)-Halide Single Crystal 二维杂化铜(I)-卤化物单晶中的自阱激子发射热诱导可逆荧光
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-06 DOI: 10.1021/acs.chemmater.4c00045
Amarjith V Dev, Manasa G. Basavarajappa, Swapnil S. Deshpande, Poulomi Mukherjee, Avija Ajayakumar, Chinnadurai Muthu, Takuya Okamoto, Sudip Chakraborty*, D. D. Sarma, Vasudevanpillai Biju and Chakkooth Vijayakumar*, 

Organic–inorganic metal halides (OIMHs) have gained significant attention as promising materials for various applications, including lighting, imaging, and energy conversion. The development of Pb-free alternatives to traditional Pb-based materials has become increasingly important for environmental and health reasons. In this study, we report on the thermally induced fluorochromism of a two-dimensional OIMH based on Cu(I), namely, (Bz)2Cu2I4·H2O (abbreviated as BzCuI). Density functional theory calculations revealed that BzCuI has a direct bandgap of 2.11 eV. Sequential fluorescence spectral shifts were observed in the temperature range of 80 to 300 K, indicating a reduction in the bandgap due to increased electron–phonon interactions at higher temperatures. The Huang–Rhys factor further confirmed the strong coupling between electrons and phonons in BzCuI. Additionally, BzCuI exhibited a unique fluorescence-switching behavior, transitioning from blue to red, which was triggered by a structural phase change involving the trapping and release of water molecules. This finding was supported by the temperature-dependent X-ray diffraction (XRD) pattern, which showed evidence of crystal lattice contraction upon heating. Furthermore, when mixed with silicon oil, BzCuI demonstrated the potential for applications such as anticounterfeiting ink and moisture-sensitivity assays. Compared to other OIMHs, BzCuI exhibited the most significant fluorescence shift within the visual spectrum, making it highly promising for various optical sensing applications.

有机-无机金属卤化物(OIMHs)作为在照明、成像和能量转换等各种应用中大有可为的材料,已受到广泛关注。出于环境和健康方面的考虑,开发无铅替代传统铅基材料变得越来越重要。在本研究中,我们报告了一种基于 Cu(I)的二维 OIMH,即 (Bz)2Cu2I4-H2O(简称 BzCuI)的热诱导荧光变色。密度泛函理论计算显示,BzCuI 的直接带隙为 2.11 eV。在 80 至 300 K 的温度范围内观察到了连续的荧光光谱偏移,表明在较高温度下电子-声子相互作用增加导致带隙减小。Huang-Rhys 因子进一步证实了 BzCuI 中电子与声子之间的强耦合。此外,BzCuI 表现出独特的荧光切换行为,从蓝色过渡到红色,这是由涉及水分子捕获和释放的结构相变引发的。随温度变化的 X 射线衍射(XRD)图也支持这一发现。此外,当与硅油混合时,BzCuI 显示出在防伪油墨和湿度敏感性检测等方面的应用潜力。与其他 OIMH 相比,BzCuI 在可视光谱范围内表现出最显著的荧光偏移,使其在各种光学传感应用中大有可为。
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引用次数: 0
Predicting the Synthesizability of Double Perovskite Halides via Interface Reaction Pathfinding 通过界面反应寻路预测双过氧化物卤化物的可合成性
IF 7.2 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-06-05 DOI: 10.1021/acs.chemmater.3c03323
Woongchan Kim, Hyeon Woo Kim, Han Uk Lee, Min Sung Kang, Dong Won Jeon, Soo Won Heo and Sung Beom Cho*, 

Recent advancements in high-throughput screening and data mining have significantly expedited the discovery of new multicomponent materials, replacing the traditionally time-consuming trial-and-error methodologies. However, accurately predicting their synthesizability remains a formidable challenge, primarily due to discrepancies between theoretical predictions and experimental processes. Theoretical predictions are focused on the stability of the final crystal structure, like energy above hull and structural factors. Experimental evolution process has complex conditions: temperature, pressure, and reaction mechanics like interface reaction. This study demonstrates that incorporating reaction pathways markedly enhances the synthesizability prediction accuracy for double perovskite halides. We predict intermediates and synthetic pathways through a detailed analysis of interface reaction mechanisms and chemical reaction networks. Specifically, the formation of the A3B′2(3+)X9 intermediate is predicted with a high driving force during the precursor’s interface reaction. Subsequently, the residual Gibbs free energy of formation necessary for the transition from the A3B′2(3+)X9 intermediate to double perovskite halides is shown to be crucial in determining the synthesizability. This approach surpassed existing structural factor-based approaches in accuracy, enabling us to predict synthesizable double perovskite halides such as Cs2AgYCl6 and Cs2KInCl6 more effectively. These findings show the critical role of incorporating reaction mechanisms into synthesizability predictions, thereby facilitating the discovery of new multicomponent materials.

近年来,高通量筛选和数据挖掘技术的进步大大加快了新型多组分材料的发现速度,取代了传统的耗时的试错法。然而,准确预测这些材料的可合成性仍然是一项艰巨的挑战,这主要是由于理论预测与实验过程之间存在差异。理论预测的重点是最终晶体结构的稳定性,如船体上方的能量和结构因素。而实验演化过程条件复杂:温度、压力和反应力学,如界面反应。本研究表明,结合反应路径可显著提高双包晶卤化物的可合成性预测精度。我们通过对界面反应机理和化学反应网络的详细分析,预测了中间产物和合成途径。具体来说,在前驱体的界面反应中,A3B′2(3+)X9 中间体的形成被预测为具有高驱动力。随后,从 A3B′2(3+)X9中间体过渡到双包晶卤化物所需的残余形成吉布斯自由能被证明是决定可合成性的关键。这种方法的准确性超过了现有的基于结构因子的方法,使我们能够更有效地预测可合成的双高闪盐卤化物,如 Cs2AgYCl6 和 Cs2KInCl6。这些发现表明,将反应机制纳入可合成性预测具有关键作用,从而有助于发现新的多组分材料。
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引用次数: 0
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Chemistry of Materials
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