Pub Date : 2024-06-10DOI: 10.1021/acs.chemmater.4c00986
Mingyuan Wang*, Hui Shi, Shahid Hussain, Guiwu Liu, Shuang-Ying Lei* and Neng Wan*,
Recently, hexagonal boron nitride (h-BN) films have been considered as an effective alternative material for preventing metal oxidation due to its electrical insulating properties and ultrathin thickness. However, there are some issues when using synthesized h-BN on metal protection, especially because its antioxidation performance will decrease after a period of time. To address this problem, the h-BN films were synthesized at commercial Cu foil by the chemical vapor deposition (CVD) method, and the failure mechanism is proposed by experimental and density functional theory (DFT) calculations. The results indicate that a twin boundary with 558-N/B structures would be formed when two different orientation domains meet, and the h-BN domains can seamlessly stitch together for the same orientations or h-BN domains located in the different adjacent single atomic layer. Next, the failure mechanism of the antioxidant is considered and the synthesized h-BN at the Cu foil was treated by thermal oxidation, and we found the generation of Cu2O/CuO induced the decoupling phenomenon between h-BN and Cu. Further DFT calculations indicate that the presence of twin boundaries and point defects can also facilitate the diffusion of the O atom, and h-BN edges terminated with H can promote the diffusion of the O atom and the diffusion and decomposition of H2O molecules more than Cu(111) passivated h-BN, which accelerates the oxidation of Cu foil, leading to the formation of Cu2O/CuO. This process increases the distance between h-BN and Cu and decreases the amount of Bader transfer and orbital hybridization of B, N, and Cu atoms between h-BN and Cu foil, thereby reducing the coupling between h-BN and Cu foil. This study can provide experimental and theoretical explanations for the failure mechanism of h-BN films in protecting metals from oxidation.
最近,六方氮化硼(h-BN)薄膜因其电绝缘特性和超薄厚度而被认为是防止金属氧化的有效替代材料。然而,在使用合成的 h-BN 保护金属时也存在一些问题,特别是在使用一段时间后,其抗氧化性能会下降。针对这一问题,我们采用化学气相沉积(CVD)方法在商用铜箔上合成了 h-BN 薄膜,并通过实验和密度泛函理论(DFT)计算提出了其失效机理。结果表明,当两个不同取向的畴相遇时,会形成具有 558-N/B 结构的孪晶边界,对于相同取向或位于不同相邻单原子层中的 h-BN 畴,可以无缝拼接在一起。接下来,我们考虑了抗氧化剂的失效机制,并对铜箔上合成的 h-BN 进行了热氧化处理,发现 Cu2O/CuO 的生成诱导了 h-BN 与铜之间的解耦现象。进一步的 DFT 计算表明,孪晶边界和点缺陷的存在也能促进 O 原子的扩散,与 Cu(111) 钝化的 h-BN 相比,以 H 终止的 h-BN 边缘更能促进 O 原子的扩散以及 H2O 分子的扩散和分解,从而加速了 Cu 箔的氧化,导致 Cu2O/CuO 的形成。这一过程增加了 h-BN 与 Cu 之间的距离,减少了 h-BN 与 Cu 箔之间 B、N 和 Cu 原子的巴德转移和轨道杂化量,从而降低了 h-BN 与 Cu 箔之间的耦合。这项研究可为 h-BN 薄膜保护金属免受氧化的失效机制提供实验和理论解释。
{"title":"Study on the Failure Mechanism of Antioxidant on Copper Foils with Growing Hexagonal Boron Nitride Films","authors":"Mingyuan Wang*, Hui Shi, Shahid Hussain, Guiwu Liu, Shuang-Ying Lei* and Neng Wan*, ","doi":"10.1021/acs.chemmater.4c00986","DOIUrl":"10.1021/acs.chemmater.4c00986","url":null,"abstract":"<p >Recently, hexagonal boron nitride (h-BN) films have been considered as an effective alternative material for preventing metal oxidation due to its electrical insulating properties and ultrathin thickness. However, there are some issues when using synthesized h-BN on metal protection, especially because its antioxidation performance will decrease after a period of time. To address this problem, the h-BN films were synthesized at commercial Cu foil by the chemical vapor deposition (CVD) method, and the failure mechanism is proposed by experimental and density functional theory (DFT) calculations. The results indicate that a twin boundary with 558-N/B structures would be formed when two different orientation domains meet, and the h-BN domains can seamlessly stitch together for the same orientations or h-BN domains located in the different adjacent single atomic layer. Next, the failure mechanism of the antioxidant is considered and the synthesized h-BN at the Cu foil was treated by thermal oxidation, and we found the generation of Cu<sub>2</sub>O/CuO induced the decoupling phenomenon between h-BN and Cu. Further DFT calculations indicate that the presence of twin boundaries and point defects can also facilitate the diffusion of the O atom, and h-BN edges terminated with H can promote the diffusion of the O atom and the diffusion and decomposition of H<sub>2</sub>O molecules more than Cu(111) passivated h-BN, which accelerates the oxidation of Cu foil, leading to the formation of Cu<sub>2</sub>O/CuO. This process increases the distance between h-BN and Cu and decreases the amount of Bader transfer and orbital hybridization of B, N, and Cu atoms between h-BN and Cu foil, thereby reducing the coupling between h-BN and Cu foil. This study can provide experimental and theoretical explanations for the failure mechanism of h-BN films in protecting metals from oxidation.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141304727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-10DOI: 10.1021/acs.chemmater.4c01084
Yu Wang, Paul Paciok, Lukas Pielsticker, Wei Wang, Alexander Spriewald Luciano, Min Ding, Lorena Glatthaar, Walid Hetaba, Yanglong Guo*, Jaime Gallego*, Bernd M. Smarsly* and Herbert Over*,
Metal exsolution is a smart strategy that allows modification and enrichment of a material’s surface with highly active catalytic phases, thus offering the possibility to fine-tune the surface chemical composition. We study the exsolution of Ru from a perovskite solid solution LaFe0.9Ru0.1O3 (LFRO) to form Ru nanoparticles and their passivation by a conforming LaOx layer by applying a variety of in situ techniques, including TEM and XPS, in combination with ex situ infrared and Raman spectroscopy, but most notably by utilizing the catalytic propane combustion to probe the formation of the passivating LaOx layer. During the Ru exsolution process, Ru3+ in LFRO is reduced first to the Ruβ species and subsequently into a Ru0 species, evidencing the exsolution of Ru particle. The transformation of Ru3+ → Ruβ proceeds already below 300 °C and is correlated with the formation of oxygen vacancies under a reductive atmosphere. The subsequent transformation of Ruβ toward Ru0 needs at least a reduction temperature of 400 °C that is likely to be determined by the diffusion of Ru3+ from the near-surface region of LFRO toward the surface. Only above 600 °C ruthenium cations from the bulk of LFRO are exsolved, leading to the further growth of Ru particles. Around 600 °C, the exsolution of Ru particles is accompanied by the formation of a covering LaOx layer. We propose that La segregation and precipitation as surface LaOx are driven by the overstoichiometry of La in LFRO after Ru exsolution.
{"title":"Microscopic Insight into Ruthenium Exsolution from LaFe0.9Ru0.1O3 Perovskite","authors":"Yu Wang, Paul Paciok, Lukas Pielsticker, Wei Wang, Alexander Spriewald Luciano, Min Ding, Lorena Glatthaar, Walid Hetaba, Yanglong Guo*, Jaime Gallego*, Bernd M. Smarsly* and Herbert Over*, ","doi":"10.1021/acs.chemmater.4c01084","DOIUrl":"10.1021/acs.chemmater.4c01084","url":null,"abstract":"<p >Metal exsolution is a smart strategy that allows modification and enrichment of a material’s surface with highly active catalytic phases, thus offering the possibility to fine-tune the surface chemical composition. We study the exsolution of Ru from a perovskite solid solution LaFe<sub>0.9</sub>Ru<sub>0.1</sub>O<sub>3</sub> (LFRO) to form Ru nanoparticles and their passivation by a conforming LaO<sub><i>x</i></sub> layer by applying a variety of <i>in situ</i> techniques, including TEM and XPS, in combination with <i>ex situ</i> infrared and Raman spectroscopy, but most notably by utilizing the catalytic propane combustion to probe the formation of the passivating LaO<sub><i>x</i></sub> layer. During the Ru exsolution process, Ru<sup>3+</sup> in LFRO is reduced first to the Ru<sup>β</sup> species and subsequently into a Ru<sup>0</sup> species, evidencing the exsolution of Ru particle. The transformation of Ru<sup>3+</sup> → Ru<sup>β</sup> proceeds already below 300 °C and is correlated with the formation of oxygen vacancies under a reductive atmosphere. The subsequent transformation of Ru<sup>β</sup> toward Ru<sup>0</sup> needs at least a reduction temperature of 400 °C that is likely to be determined by the diffusion of Ru<sup>3+</sup> from the near-surface region of LFRO toward the surface. Only above 600 °C ruthenium cations from the bulk of LFRO are exsolved, leading to the further growth of Ru particles. Around 600 °C, the exsolution of Ru particles is accompanied by the formation of a covering LaO<sub><i>x</i></sub> layer. We propose that La segregation and precipitation as surface LaO<sub><i>x</i></sub> are driven by the overstoichiometry of La in LFRO after Ru exsolution.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141304690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-09DOI: 10.1021/acs.chemmater.4c00937
Bryan Owens-Baird, Volodymyr Gvozdetskyi, Arka Sarkar, Balaranjan Selvaratnam, Arthur Mar* and Kirill Kovnir*,
Specific structural motifs in inorganic solids are often related to their targeted physical properties. For many classes of solids, such as Zintl phases and polar intermetallics, the crystal structures are diverse and not easy to predict. Various antimonides that are potential thermoelectric materials were proposed to be synthesizable on the basis of their estimated formation energies. Their structures were broadly classified as clathrate, channel, layered, or network through a machine learning model trained on existing ternary phases and features based on elemental properties using the sure independence screening and sparsifying operator algorithm. Through experimental validation, three new ternary antimonides were synthesized and confirmed to form layered structures: tetragonal RbAlSb2 and CsAlSb2, which are isopointal but not isotypic to LiBSi2; and monoclinic Rb2Al2Sb3, which adopts the Na2Al2Sb3-type structure. Reinvestigation of the related compound Cs2In2Sb3 revealed a low thermal conductivity and p-type semiconducting behavior.
无机固体的特定结构模式往往与其目标物理性质有关。对于 Zintl 相和极性金属间化合物等许多类别的固体来说,晶体结构多种多样,不易预测。根据估计的形成能量,人们提出了可合成潜在热电材料的各种锑化物。通过使用确定的独立性筛选和稀疏算子算法,根据现有的三元相和基于元素特性的特征训练出的机器学习模型,将它们的结构大致分为凝块状、通道状、层状或网络状。通过实验验证,合成了三种新的三元锑化物,并确认它们形成了层状结构:四方RbAlSb2和CsAlSb2,它们与LiBSi2同点但不同型;以及单斜Rb2Al2Sb3,它采用了Na2Al2Sb3型结构。对相关化合物 Cs2In2Sb3 的再研究表明,该化合物具有较低的热导率和 p 型半导体行为。
{"title":"Discovery of Ternary Antimonides A–Al–Sb (A = Rb or Cs) with Desired Structural Motifs Guided by Machine Learning","authors":"Bryan Owens-Baird, Volodymyr Gvozdetskyi, Arka Sarkar, Balaranjan Selvaratnam, Arthur Mar* and Kirill Kovnir*, ","doi":"10.1021/acs.chemmater.4c00937","DOIUrl":"10.1021/acs.chemmater.4c00937","url":null,"abstract":"<p >Specific structural motifs in inorganic solids are often related to their targeted physical properties. For many classes of solids, such as Zintl phases and polar intermetallics, the crystal structures are diverse and not easy to predict. Various antimonides that are potential thermoelectric materials were proposed to be synthesizable on the basis of their estimated formation energies. Their structures were broadly classified as clathrate, channel, layered, or network through a machine learning model trained on existing ternary phases and features based on elemental properties using the sure independence screening and sparsifying operator algorithm. Through experimental validation, three new ternary antimonides were synthesized and confirmed to form layered structures: tetragonal RbAlSb<sub>2</sub> and CsAlSb<sub>2</sub>, which are isopointal but not isotypic to LiBSi<sub>2</sub>; and monoclinic Rb<sub>2</sub>Al<sub>2</sub>Sb<sub>3</sub>, which adopts the Na<sub>2</sub>Al<sub>2</sub>Sb<sub>3</sub>-type structure. Reinvestigation of the related compound Cs<sub>2</sub>In<sub>2</sub>Sb<sub>3</sub> revealed a low thermal conductivity and p-type semiconducting behavior.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141368103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effects of plasma reactants on the plasma-assisted atomic layer deposition (ALD) of lithium phosphate are investigated in relation to the fabrication of high-quality lithium phosphorus oxynitride (LiPON) thin films for potential use as a solid-state electrolyte (SSE) in both microbatteries and neuromorphic devices. Our ALD processes enable the incorporation of nitrogen into a lithium phosphate matrix, using lithium tert-butoxide and tris(dimethylamino)phosphine as the lithium and phosphorus precursors, respectively, in a deposition temperature window of 220–300 °C. With O2 plasma, polycrystalline lithium phosphate films, with a relatively well-arranged pyrophosphate, are deposited. Amorphous LiPON films, with a mixture of pyrophosphates and orthophosphates, are obtained when Ar or NH3 plasma is used. When the NH3 flow rate increases, the nitrogen composition increases up to ∼13%, while residual carbon is kept below a few percent. For a Li2.5PO1.9N0.8 film deposited at 300 °C with NH3 plasma, the ionic conductivity is measured as 1.65 ± 0.42 × 10–6 S/cm at 25 °C, with an activation energy of 0.66 eV. This conductivity is the highest value of any ALD LiPON film reported to date. Our ALD processes exhibit a high level of controllability of the molecular structures of the phosphorus oxynitride matrix with high ionic conductivity, which makes them suitable for realizing high-performance Li SSE thin films.
我们研究了等离子体反应物对等离子体辅助磷化锂原子层沉积(ALD)的影响,这些等离子体反应物与高质量磷氧化物(LiPON)薄膜的制造有关,这种薄膜可能用作微型电池和神经形态设备中的固态电解质(SSE)。我们的 ALD 工艺能在 220-300 °C 的沉积温度窗口内,使用叔丁醇锂和三(二甲基氨基)膦分别作为锂和磷的前驱体,将氮掺入磷酸锂基体中。在氧气等离子体的作用下,沉积出了多晶磷酸锂薄膜,其中的焦磷酸盐排列相对整齐。在使用 Ar 或 NH3 等离子体时,可获得无定形的磷酸锂薄膜,其中包含焦磷酸盐和正磷酸盐的混合物。当 NH3 的流速增加时,氮的成分增加到 13%,而残碳则保持在百分之几以下。使用 NH3 等离子体在 300 °C 下沉积的 Li2.5PO1.9N0.8 薄膜,在 25 °C 下的离子电导率为 1.65 ± 0.42 × 10-6 S/cm,活化能为 0.66 eV。这一电导率是迄今所报道的 ALD LiPON 薄膜中的最高值。我们的 ALD 工艺对具有高离子电导率的氧氮化磷基质的分子结构具有很高的可控性,因此适合实现高性能的锂 SSE 薄膜。
{"title":"Effects of Plasma Reactants on Atomic Layer Deposition of Lithium Phosphate and Lithium Phosphorus Oxynitride Electrolyte Films","authors":"Tohru Tsuruoka*, Samapika Mallik, Takuji Tsujita, Yuu Inatomi and Kazuya Terabe, ","doi":"10.1021/acs.chemmater.4c00960","DOIUrl":"10.1021/acs.chemmater.4c00960","url":null,"abstract":"<p >The effects of plasma reactants on the plasma-assisted atomic layer deposition (ALD) of lithium phosphate are investigated in relation to the fabrication of high-quality lithium phosphorus oxynitride (LiPON) thin films for potential use as a solid-state electrolyte (SSE) in both microbatteries and neuromorphic devices. Our ALD processes enable the incorporation of nitrogen into a lithium phosphate matrix, using lithium <i>tert</i>-butoxide and tris(dimethylamino)phosphine as the lithium and phosphorus precursors, respectively, in a deposition temperature window of 220–300 °C. With O<sub>2</sub> plasma, polycrystalline lithium phosphate films, with a relatively well-arranged pyrophosphate, are deposited. Amorphous LiPON films, with a mixture of pyrophosphates and orthophosphates, are obtained when Ar or NH<sub>3</sub> plasma is used. When the NH<sub>3</sub> flow rate increases, the nitrogen composition increases up to ∼13%, while residual carbon is kept below a few percent. For a Li<sub>2.5</sub>PO<sub>1.9</sub>N<sub>0.8</sub> film deposited at 300 °C with NH<sub>3</sub> plasma, the ionic conductivity is measured as 1.65 ± 0.42 × 10<sup>–6</sup> S/cm at 25 °C, with an activation energy of 0.66 eV. This conductivity is the highest value of any ALD LiPON film reported to date. Our ALD processes exhibit a high level of controllability of the molecular structures of the phosphorus oxynitride matrix with high ionic conductivity, which makes them suitable for realizing high-performance Li SSE thin films.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141287321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1021/acs.chemmater.4c00578
Makoto Iihoshi, Masato Goto and Yuichi Shimakawa*,
A-site layer-ordered double perovskites LnBaFe2O6 (Ln = Pr, Sm) were synthesized by topotactic ozone oxidation, and their successive phase transition behaviors were investigated. The results of differential scanning calorimetry, X-ray powder diffraction, Mössbauer spectroscopy, and magnetization measurements suggested that both compounds exhibited successive charge transitions accompanied by complicated changes in physical properties, involving the charge, lattice, and spin degrees of freedom. For SmBaFe2O6, the first-order structural and magnetic transition related to the first charge disproportionation transition (2Fe3.5+ → Fe3+ + Fe4+) occurred at a higher temperature than that of PrBaFe2O6, while the second-order magnetic transition, which was induced by the second charge disproportionation (Fe4+ → 0.5Fe3+ + 0.5Fe5+) was observed at a lower temperature. The obtained results suggest that the metastable charge-disproportionated state (Fe3+ + Fe4+) of LnBaFe2O6 is more stabilized when the lanthanoid ion at the A-site is smaller.
{"title":"Stabilities of Charge Disproportionated States by Successive Charge Transitions of Mixed and Unusually High Valence Fe3.5+ in LnBaFe2O6 (Ln = Pr, Sm)","authors":"Makoto Iihoshi, Masato Goto and Yuichi Shimakawa*, ","doi":"10.1021/acs.chemmater.4c00578","DOIUrl":"10.1021/acs.chemmater.4c00578","url":null,"abstract":"<p >A-site layer-ordered double perovskites <i>Ln</i>BaFe<sub>2</sub>O<sub>6</sub> (<i>Ln</i> = Pr, Sm) were synthesized by topotactic ozone oxidation, and their successive phase transition behaviors were investigated. The results of differential scanning calorimetry, X-ray powder diffraction, Mössbauer spectroscopy, and magnetization measurements suggested that both compounds exhibited successive charge transitions accompanied by complicated changes in physical properties, involving the charge, lattice, and spin degrees of freedom. For SmBaFe<sub>2</sub>O<sub>6</sub>, the first-order structural and magnetic transition related to the first charge disproportionation transition (2Fe<sup>3.5+</sup> → Fe<sup>3+</sup> + Fe<sup>4+</sup>) occurred at a higher temperature than that of PrBaFe<sub>2</sub>O<sub>6</sub>, while the second-order magnetic transition, which was induced by the second charge disproportionation (Fe<sup>4+</sup> → 0.5Fe<sup>3+</sup> + 0.5Fe<sup>5+</sup>) was observed at a lower temperature. The obtained results suggest that the metastable charge-disproportionated state (Fe<sup>3+</sup> + Fe<sup>4+</sup>) of <i>Ln</i>BaFe<sub>2</sub>O<sub>6</sub> is more stabilized when the lanthanoid ion at the A-site is smaller.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141287350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1021/acs.chemmater.4c00492
Pieter Schiettecatte*, Luca Giordano, Ben Cruyssaert, Guillaume Bonifas, Norick De Vlamynck, Hannes Van Avermaet, Qiang Zhao, André Vantomme, Celine Nayral, Fabien Delpech and Zeger Hens*,
Indium phosphide (InP) quantum dots (QDs) represent the main alternative to restricted Cd-based QDs in lighting and display applications. Typically, the photoluminescence (PL) of InP QDs is increased by overgrowth of a zinc chalcogenide shell, consisting of ZnSe and/or ZnS. Here, we show that the outer surface of InP/ZnSe QDs synthesized using aminophosphine-based chemistry is passivated by oleylamine and zinc chloride, while zinc oleate, used as a precursor for shell growth, is absent from the surface. The resulting low surface concentration of zinc salts leads to an incomplete passivation of undercoordinated surface chalcogenides, a known source of trap states. We demonstrate that a subsequent exposure of the QDs to zinc acetate, a mild Lewis acid, drastically enhances the PL quantum yield (PLQY) from approximately 40% before to 90% after exposure. This outcome is highly reproducible and can be realized either through an in situ exposure by adding zinc acetate to the reaction mixture or an ex situ exposure on purified InP-based QDs. Given that zinc chalcogenides are frequently used as an outer shell for QDs, this method of passivating undercoordinated chalcogenides holds significant promise for enhancing the PLQY across a wide array of core/shell QD systems.
{"title":"Enhanced Surface Passivation of InP/ZnSe Quantum Dots by Zinc Acetate Exposure","authors":"Pieter Schiettecatte*, Luca Giordano, Ben Cruyssaert, Guillaume Bonifas, Norick De Vlamynck, Hannes Van Avermaet, Qiang Zhao, André Vantomme, Celine Nayral, Fabien Delpech and Zeger Hens*, ","doi":"10.1021/acs.chemmater.4c00492","DOIUrl":"10.1021/acs.chemmater.4c00492","url":null,"abstract":"<p >Indium phosphide (InP) quantum dots (QDs) represent the main alternative to restricted Cd-based QDs in lighting and display applications. Typically, the photoluminescence (PL) of InP QDs is increased by overgrowth of a zinc chalcogenide shell, consisting of ZnSe and/or ZnS. Here, we show that the outer surface of InP/ZnSe QDs synthesized using aminophosphine-based chemistry is passivated by oleylamine and zinc chloride, while zinc oleate, used as a precursor for shell growth, is absent from the surface. The resulting low surface concentration of zinc salts leads to an incomplete passivation of undercoordinated surface chalcogenides, a known source of trap states. We demonstrate that a subsequent exposure of the QDs to zinc acetate, a mild Lewis acid, drastically enhances the PL quantum yield (PLQY) from approximately 40% before to 90% after exposure. This outcome is highly reproducible and can be realized either through an in situ exposure by adding zinc acetate to the reaction mixture or an ex situ exposure on purified InP-based QDs. Given that zinc chalcogenides are frequently used as an outer shell for QDs, this method of passivating undercoordinated chalcogenides holds significant promise for enhancing the PLQY across a wide array of core/shell QD systems.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141373429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-06DOI: 10.1021/acs.chemmater.4c00907
Jared D. Fletcher, Aaron M. Schankler, Cheng Liu, Yi Yang, Claudia Pereyra Huelmo, Craig C. Laing, Evan H. Oriel, Lin X. Chen, Richard D. Schaller, Edward H. Sargent, Andrew M. Rappe and Mercouri G. Kanatzidis*,
Hybrid organic–inorganic perovskites are a rapidly developing class of materials due to their desirable properties for optoelectronic applications such as their ease of synthesis, solution-processable film formation, tunable band gap, strong photoluminescence, good charge carrier mobilities, and high defect tolerance. We present a novel 2D perovskite motif that seamlessly integrates the structural elements from both Ruddlesden–Popper and Dion–Jacobson halide perovskites. We demonstrate the incorporation of two different organic spacer cations in an ordered manner in 5 novel 2D perovskite iodide materials. Both a cyclic diammonium cation 3-(aminomethyl)piperidinium (3AMP) and a linear alkyl monoammonium cation (Cn = CnH2n+4N, n = 4–8) are present in distinct alternating layers, making the new series (Cn)2(3AMP)[PbI4]2. The crystallization of these materials was optimized through careful temperature control to obtain precise crystal structures via single-crystal X-ray diffraction (XRD) which confirmed the presence of the two cations in distinct layers. The influence of the two spacers on optical properties including the band gaps and photoluminescence spectra are found to more closely resemble (3AMP)PbI4 than (Cn)2PbI4, which can be attributed to the amount of distortion imposed by the 3AMP spacer on the lead iodide layers. The findings are supported by density functional theory calculations. The strong photoelectric response of solution-processed thin films shows the potential of these materials in photodetectors or photovoltaics. This unprecedented amalgamation of RP–DJ in (Cn)2(3AMP)[PbI4]2 in a structurally ordered fashion suggests a potential vastly underexplored phase space of 2D perovskites in which there are chemically different spacers in distinct layers of the structure, providing an additional parameter to tune perovskite properties.
{"title":"Two Spacers, One Perovskite: Integrating Ruddlesden–Popper and Dion–Jacobson Halide Perovskites","authors":"Jared D. Fletcher, Aaron M. Schankler, Cheng Liu, Yi Yang, Claudia Pereyra Huelmo, Craig C. Laing, Evan H. Oriel, Lin X. Chen, Richard D. Schaller, Edward H. Sargent, Andrew M. Rappe and Mercouri G. Kanatzidis*, ","doi":"10.1021/acs.chemmater.4c00907","DOIUrl":"10.1021/acs.chemmater.4c00907","url":null,"abstract":"<p >Hybrid organic–inorganic perovskites are a rapidly developing class of materials due to their desirable properties for optoelectronic applications such as their ease of synthesis, solution-processable film formation, tunable band gap, strong photoluminescence, good charge carrier mobilities, and high defect tolerance. We present a novel 2D perovskite motif that seamlessly integrates the structural elements from both Ruddlesden–Popper and Dion–Jacobson halide perovskites. We demonstrate the incorporation of two different organic spacer cations in an ordered manner in 5 novel 2D perovskite iodide materials. Both a cyclic diammonium cation 3-(aminomethyl)piperidinium (3AMP) and a linear alkyl monoammonium cation (C<i>n</i> = C<sub><i>n</i></sub>H<sub>2<i>n</i>+4</sub>N, <i>n</i> = 4–8) are present in distinct alternating layers, making the new series (C<i>n</i>)<sub>2</sub>(3AMP)[PbI<sub>4</sub>]<sub>2</sub>. The crystallization of these materials was optimized through careful temperature control to obtain precise crystal structures via single-crystal X-ray diffraction (XRD) which confirmed the presence of the two cations in distinct layers. The influence of the two spacers on optical properties including the band gaps and photoluminescence spectra are found to more closely resemble (3AMP)PbI<sub>4</sub> than (C<i>n</i>)<sub>2</sub>PbI<sub>4</sub>, which can be attributed to the amount of distortion imposed by the 3AMP spacer on the lead iodide layers. The findings are supported by density functional theory calculations. The strong photoelectric response of solution-processed thin films shows the potential of these materials in photodetectors or photovoltaics. This unprecedented amalgamation of RP–DJ in (C<i>n</i>)<sub>2</sub>(3AMP)[PbI<sub>4</sub>]<sub>2</sub> in a structurally ordered fashion suggests a potential vastly underexplored phase space of 2D perovskites in which there are chemically different spacers in distinct layers of the structure, providing an additional parameter to tune perovskite properties.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141265064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-06DOI: 10.1021/acs.chemmater.4c00540
Udari Wijesinghe, William D. Tetlow, Pietro Maiello, Nicole Fleck, Graeme O’Dowd, Neil S. Beattie, Giulia Longo* and Oliver S. Hutter*,
Thermal annealing is the most common postdeposition technique used to crystallize antimony selenide (Sb2Se3) thin films. However, due to slow processing speeds and a high energy cost, it is incompatible with the upscaling and commercialization of Sb2Se3 for future photovoltaics. Herein, for the first time, a fast-annealing technique that uses millisecond light pulses to deliver energy to the sample is adapted to cure thermally evaporated Sb2Se3 films. This study demonstrates how photonic curing (PC) conditions affect the outcome of Sb2Se3 phase conversion from amorphous to crystalline by evaluating the films’ crystalline, morphological, and optical properties. We show that Sb2Se3 is readily converted under a variety of different conditions, but the zone where suitable films for optoelectronic applications are obtained is a small region of the parameter space. Sb2Se3 annealing with short pulses (<3 ms) shows significant damage to the sample, while using longer pulses (>5 ms) and a 4–5 J cm–2 radiant energy produces (211)- and (221)-oriented crystalline Sb2Se3 with minimal to no damage to the sample. A proof-of-concept photonically cured Sb2Se3 photovoltaic device is demonstrated. PC is a promising annealing method for large-area, high-throughput annealing of Sb2Se3 with various potential applications in Sb2Se3 photovoltaics.
{"title":"Crystalline Antimony Selenide Thin Films for Optoelectronics through Photonic Curing","authors":"Udari Wijesinghe, William D. Tetlow, Pietro Maiello, Nicole Fleck, Graeme O’Dowd, Neil S. Beattie, Giulia Longo* and Oliver S. Hutter*, ","doi":"10.1021/acs.chemmater.4c00540","DOIUrl":"10.1021/acs.chemmater.4c00540","url":null,"abstract":"<p >Thermal annealing is the most common postdeposition technique used to crystallize antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>) thin films. However, due to slow processing speeds and a high energy cost, it is incompatible with the upscaling and commercialization of Sb<sub>2</sub>Se<sub>3</sub> for future photovoltaics. Herein, for the first time, a fast-annealing technique that uses millisecond light pulses to deliver energy to the sample is adapted to cure thermally evaporated Sb<sub>2</sub>Se<sub>3</sub> films. This study demonstrates how photonic curing (PC) conditions affect the outcome of Sb<sub>2</sub>Se<sub>3</sub> phase conversion from amorphous to crystalline by evaluating the films’ crystalline, morphological, and optical properties. We show that Sb<sub>2</sub>Se<sub>3</sub> is readily converted under a variety of different conditions, but the zone where suitable films for optoelectronic applications are obtained is a small region of the parameter space. Sb<sub>2</sub>Se<sub>3</sub> annealing with short pulses (<3 ms) shows significant damage to the sample, while using longer pulses (>5 ms) and a 4–5 J cm<sup>–2</sup> radiant energy produces (211)- and (221)-oriented crystalline Sb<sub>2</sub>Se<sub>3</sub> with minimal to no damage to the sample. A proof-of-concept photonically cured Sb<sub>2</sub>Se<sub>3</sub> photovoltaic device is demonstrated. PC is a promising annealing method for large-area, high-throughput annealing of Sb<sub>2</sub>Se<sub>3</sub> with various potential applications in Sb<sub>2</sub>Se<sub>3</sub> photovoltaics.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acs.chemmater.4c00540","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141287325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-06DOI: 10.1021/acs.chemmater.4c00045
Amarjith V Dev, Manasa G. Basavarajappa, Swapnil S. Deshpande, Poulomi Mukherjee, Avija Ajayakumar, Chinnadurai Muthu, Takuya Okamoto, Sudip Chakraborty*, D. D. Sarma, Vasudevanpillai Biju and Chakkooth Vijayakumar*,
Organic–inorganic metal halides (OIMHs) have gained significant attention as promising materials for various applications, including lighting, imaging, and energy conversion. The development of Pb-free alternatives to traditional Pb-based materials has become increasingly important for environmental and health reasons. In this study, we report on the thermally induced fluorochromism of a two-dimensional OIMH based on Cu(I), namely, (Bz)2Cu2I4·H2O (abbreviated as BzCuI). Density functional theory calculations revealed that BzCuI has a direct bandgap of 2.11 eV. Sequential fluorescence spectral shifts were observed in the temperature range of 80 to 300 K, indicating a reduction in the bandgap due to increased electron–phonon interactions at higher temperatures. The Huang–Rhys factor further confirmed the strong coupling between electrons and phonons in BzCuI. Additionally, BzCuI exhibited a unique fluorescence-switching behavior, transitioning from blue to red, which was triggered by a structural phase change involving the trapping and release of water molecules. This finding was supported by the temperature-dependent X-ray diffraction (XRD) pattern, which showed evidence of crystal lattice contraction upon heating. Furthermore, when mixed with silicon oil, BzCuI demonstrated the potential for applications such as anticounterfeiting ink and moisture-sensitivity assays. Compared to other OIMHs, BzCuI exhibited the most significant fluorescence shift within the visual spectrum, making it highly promising for various optical sensing applications.
{"title":"Thermally Induced Reversible Fluorochromism by Self-Trapped Excitonic Emission in a Two-Dimensional Hybrid Copper(I)-Halide Single Crystal","authors":"Amarjith V Dev, Manasa G. Basavarajappa, Swapnil S. Deshpande, Poulomi Mukherjee, Avija Ajayakumar, Chinnadurai Muthu, Takuya Okamoto, Sudip Chakraborty*, D. D. Sarma, Vasudevanpillai Biju and Chakkooth Vijayakumar*, ","doi":"10.1021/acs.chemmater.4c00045","DOIUrl":"10.1021/acs.chemmater.4c00045","url":null,"abstract":"<p >Organic–inorganic metal halides (OIMHs) have gained significant attention as promising materials for various applications, including lighting, imaging, and energy conversion. The development of Pb-free alternatives to traditional Pb-based materials has become increasingly important for environmental and health reasons. In this study, we report on the thermally induced fluorochromism of a two-dimensional OIMH based on Cu(I), namely, (Bz)<sub>2</sub>Cu<sub>2</sub>I<sub>4</sub>·H<sub>2</sub>O (abbreviated as BzCuI). Density functional theory calculations revealed that BzCuI has a direct bandgap of 2.11 eV. Sequential fluorescence spectral shifts were observed in the temperature range of 80 to 300 K, indicating a reduction in the bandgap due to increased electron–phonon interactions at higher temperatures. The Huang–Rhys factor further confirmed the strong coupling between electrons and phonons in BzCuI. Additionally, BzCuI exhibited a unique fluorescence-switching behavior, transitioning from blue to red, which was triggered by a structural phase change involving the trapping and release of water molecules. This finding was supported by the temperature-dependent X-ray diffraction (XRD) pattern, which showed evidence of crystal lattice contraction upon heating. Furthermore, when mixed with silicon oil, BzCuI demonstrated the potential for applications such as anticounterfeiting ink and moisture-sensitivity assays. Compared to other OIMHs, BzCuI exhibited the most significant fluorescence shift within the visual spectrum, making it highly promising for various optical sensing applications.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141287370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-05DOI: 10.1021/acs.chemmater.3c03323
Woongchan Kim, Hyeon Woo Kim, Han Uk Lee, Min Sung Kang, Dong Won Jeon, Soo Won Heo and Sung Beom Cho*,
Recent advancements in high-throughput screening and data mining have significantly expedited the discovery of new multicomponent materials, replacing the traditionally time-consuming trial-and-error methodologies. However, accurately predicting their synthesizability remains a formidable challenge, primarily due to discrepancies between theoretical predictions and experimental processes. Theoretical predictions are focused on the stability of the final crystal structure, like energy above hull and structural factors. Experimental evolution process has complex conditions: temperature, pressure, and reaction mechanics like interface reaction. This study demonstrates that incorporating reaction pathways markedly enhances the synthesizability prediction accuracy for double perovskite halides. We predict intermediates and synthetic pathways through a detailed analysis of interface reaction mechanisms and chemical reaction networks. Specifically, the formation of the A3B′2(3+)X9 intermediate is predicted with a high driving force during the precursor’s interface reaction. Subsequently, the residual Gibbs free energy of formation necessary for the transition from the A3B′2(3+)X9 intermediate to double perovskite halides is shown to be crucial in determining the synthesizability. This approach surpassed existing structural factor-based approaches in accuracy, enabling us to predict synthesizable double perovskite halides such as Cs2AgYCl6 and Cs2KInCl6 more effectively. These findings show the critical role of incorporating reaction mechanisms into synthesizability predictions, thereby facilitating the discovery of new multicomponent materials.
{"title":"Predicting the Synthesizability of Double Perovskite Halides via Interface Reaction Pathfinding","authors":"Woongchan Kim, Hyeon Woo Kim, Han Uk Lee, Min Sung Kang, Dong Won Jeon, Soo Won Heo and Sung Beom Cho*, ","doi":"10.1021/acs.chemmater.3c03323","DOIUrl":"10.1021/acs.chemmater.3c03323","url":null,"abstract":"<p >Recent advancements in high-throughput screening and data mining have significantly expedited the discovery of new multicomponent materials, replacing the traditionally time-consuming trial-and-error methodologies. However, accurately predicting their synthesizability remains a formidable challenge, primarily due to discrepancies between theoretical predictions and experimental processes. Theoretical predictions are focused on the stability of the final crystal structure, like energy above hull and structural factors. Experimental evolution process has complex conditions: temperature, pressure, and reaction mechanics like interface reaction. This study demonstrates that incorporating reaction pathways markedly enhances the synthesizability prediction accuracy for double perovskite halides. We predict intermediates and synthetic pathways through a detailed analysis of interface reaction mechanisms and chemical reaction networks. Specifically, the formation of the A<sub>3</sub>B′<sub>2</sub><sup>(3+)</sup>X<sub>9</sub> intermediate is predicted with a high driving force during the precursor’s interface reaction. Subsequently, the residual Gibbs free energy of formation necessary for the transition from the A<sub>3</sub>B′<sub>2</sub><sup>(3+)</sup>X<sub>9</sub> intermediate to double perovskite halides is shown to be crucial in determining the synthesizability. This approach surpassed existing structural factor-based approaches in accuracy, enabling us to predict synthesizable double perovskite halides such as Cs<sub>2</sub>AgYCl<sub>6</sub> and Cs<sub>2</sub>KInCl<sub>6</sub> more effectively. These findings show the critical role of incorporating reaction mechanisms into synthesizability predictions, thereby facilitating the discovery of new multicomponent materials.</p>","PeriodicalId":33,"journal":{"name":"Chemistry of Materials","volume":null,"pages":null},"PeriodicalIF":7.2,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141251837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}