Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616814
A. García-Lampérez, S. Llorente-Romano, M. Salazar-Palma
Compact multiplexers are a class of multiport networks entirely formed by coupled resonators, with no additional elements, as junction structures or transmission line lengths. The synthesis of their coupling matrices require the formulation of scattering coefficients as rational functions that verify the realizability conditions. A solution is to approximate the reflection coefficients as the ones of isolated filters, and then to reconstruct the transmission coefficients. This approach is quite robust when the pass bands are clearly separated, but additional care must be taken when they are contiguous. In particular, phase offsets should be applied to the isolated filters responses. The effect of these phase shifts can be compensated after the coupling matrix synthesis.
{"title":"Formulation of realizable scattering matrices for multiplexers with contiguous bands","authors":"A. García-Lampérez, S. Llorente-Romano, M. Salazar-Palma","doi":"10.1109/IEEE-IWS.2013.6616814","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616814","url":null,"abstract":"Compact multiplexers are a class of multiport networks entirely formed by coupled resonators, with no additional elements, as junction structures or transmission line lengths. The synthesis of their coupling matrices require the formulation of scattering coefficients as rational functions that verify the realizability conditions. A solution is to approximate the reflection coefficients as the ones of isolated filters, and then to reconstruct the transmission coefficients. This approach is quite robust when the pass bands are clearly separated, but additional care must be taken when they are contiguous. In particular, phase offsets should be applied to the isolated filters responses. The effect of these phase shifts can be compensated after the coupling matrix synthesis.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132630067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616850
Bumman Kim
Summary form only given. The handset PAs for advanced system, such as 4G and beyond, should handle signals with high PAPR. For amplification of the signals, efficiency of the PAs is degraded significantly due to the operation at a low power region. For the system application point, the PAs are required to have a multimode and multiband capability, also. These stringent requirements ask advanced design architectures of the PAs. These architectures are based on a highly efficient amplifier and try to maintain the high efficiency at a low power level. The representative architectures are ET technique, Doherty amplifier, class-S amplifier, LINC and some digital PAs. ET is the most popular architecture for the handset application since the ET PA is very flexible, suitable to the multimode and multiband operation, together with high efficiency. This technique can be applied easily to a low-high mode PA, also. One variation of the technique is an average power tracking (APT) amplifier, controlling VDC according to the average power level at a slow speed using a buck DC-DC converter. This PA is on the market, now. Doherty can provide a high efficiency for the application and there is a significant progress for the broad banding but the bandwidth is still limited. Recently, the performance of the LINC PA is improved significantly by increasing the power combining efficiency. The distortion is cancelled using DPD technique. The progress in LINC is mainly focused on the infrastructure application but it can be employed for handset PA also. As transistors are scaled down with higher speed, the digitally configured circuit can be applied for the RF signal amplification. The digital circuit is very flexible and can be used for multimode/multiband application but the performance is not up to the expectation, yet. For the digital amplification, the I-Q modulated signal is, normally, up-converted to a polar signal. The amplitude information is digitized at the base band speed or the RF frequency and is applied to the digital circuit. The digital bit signal can be amplified by the thermo coded cells, forming a digital amplifier. The digitizing can be done using sigma-delta modulator and the digitized bit can be applied to a PA, either as an input or as a bias voltage. The resulting amplifier is a class-S PA. The I-Q modulated signal can be directly up-converted while maintaining the digital bits using sampling technique and is applied to the thermo code cells. These digitally configured PAs are actively studied now and will progress continuous. These various advanced architectures for the next generation PA for handset application will be introduced in this talk.
{"title":"Advanced linear PA architectures for handset applications","authors":"Bumman Kim","doi":"10.1109/IEEE-IWS.2013.6616850","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616850","url":null,"abstract":"Summary form only given. The handset PAs for advanced system, such as 4G and beyond, should handle signals with high PAPR. For amplification of the signals, efficiency of the PAs is degraded significantly due to the operation at a low power region. For the system application point, the PAs are required to have a multimode and multiband capability, also. These stringent requirements ask advanced design architectures of the PAs. These architectures are based on a highly efficient amplifier and try to maintain the high efficiency at a low power level. The representative architectures are ET technique, Doherty amplifier, class-S amplifier, LINC and some digital PAs. ET is the most popular architecture for the handset application since the ET PA is very flexible, suitable to the multimode and multiband operation, together with high efficiency. This technique can be applied easily to a low-high mode PA, also. One variation of the technique is an average power tracking (APT) amplifier, controlling VDC according to the average power level at a slow speed using a buck DC-DC converter. This PA is on the market, now. Doherty can provide a high efficiency for the application and there is a significant progress for the broad banding but the bandwidth is still limited. Recently, the performance of the LINC PA is improved significantly by increasing the power combining efficiency. The distortion is cancelled using DPD technique. The progress in LINC is mainly focused on the infrastructure application but it can be employed for handset PA also. As transistors are scaled down with higher speed, the digitally configured circuit can be applied for the RF signal amplification. The digital circuit is very flexible and can be used for multimode/multiband application but the performance is not up to the expectation, yet. For the digital amplification, the I-Q modulated signal is, normally, up-converted to a polar signal. The amplitude information is digitized at the base band speed or the RF frequency and is applied to the digital circuit. The digital bit signal can be amplified by the thermo coded cells, forming a digital amplifier. The digitizing can be done using sigma-delta modulator and the digitized bit can be applied to a PA, either as an input or as a bias voltage. The resulting amplifier is a class-S PA. The I-Q modulated signal can be directly up-converted while maintaining the digital bits using sampling technique and is applied to the thermo code cells. These digitally configured PAs are actively studied now and will progress continuous. These various advanced architectures for the next generation PA for handset application will be introduced in this talk.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"2 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133258989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616801
A. Anbaran, A. Mohammadi, A. Abdipour
In this paper, we investigate electronically steerable parasitic array radiator (ESPAR) smart antenna in a highway scenario, where roadside access points (APs) are installed on a highway to provide intelligent transportation System (ITS) services. We Consider vehicle-to-roadside (V2R) communication for a vehicle that aims to send data to the AP (uplink). A seven element ESPAR system as a beam former smart antenna in AP is used to eliminate the interference signals. The simulation results indicate that ESPAR system can improve the average capacity of the link more than 2 bps/Hz.
{"title":"Capacity enhancement in vehicle to roadside networks using ESPAR technique","authors":"A. Anbaran, A. Mohammadi, A. Abdipour","doi":"10.1109/IEEE-IWS.2013.6616801","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616801","url":null,"abstract":"In this paper, we investigate electronically steerable parasitic array radiator (ESPAR) smart antenna in a highway scenario, where roadside access points (APs) are installed on a highway to provide intelligent transportation System (ITS) services. We Consider vehicle-to-roadside (V2R) communication for a vehicle that aims to send data to the AP (uplink). A seven element ESPAR system as a beam former smart antenna in AP is used to eliminate the interference signals. The simulation results indicate that ESPAR system can improve the average capacity of the link more than 2 bps/Hz.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"75 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134011095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616787
S. A. Sis, V. Lee, Seungku Lee, A. Mortazawi
This paper presents bulk acoustic wave resonators using the ferroelectric materials barium titanate and barium strontium titanate. The electric field induced piezoelectric effect in these materials is utilized in the design of various types of intrinsically switchable bulk acoustic wave resonators. Both thickness mode and lateral mode resonator results, which have been demonstrated recently, are summarized in this paper. Significantly improved quality factors by means of forming a ferroelectric-on-silicon structure are also demonstrated.
{"title":"Intrinsically switchable thin film ferroelectric resonators utilizing electric field induced piezoelectric effect","authors":"S. A. Sis, V. Lee, Seungku Lee, A. Mortazawi","doi":"10.1109/IEEE-IWS.2013.6616787","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616787","url":null,"abstract":"This paper presents bulk acoustic wave resonators using the ferroelectric materials barium titanate and barium strontium titanate. The electric field induced piezoelectric effect in these materials is utilized in the design of various types of intrinsically switchable bulk acoustic wave resonators. Both thickness mode and lateral mode resonator results, which have been demonstrated recently, are summarized in this paper. Significantly improved quality factors by means of forming a ferroelectric-on-silicon structure are also demonstrated.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131883459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616772
N. Goncharuk
Microwave diode on AlGaAs/GaAs single barrier nanostructure with electron tunnel injection through AlGaAs potential barrier and electron drift in GaAs transit layer is investigated in the framework of small-signal theory taking into account diode parasitic resistance. We consider both transit and injection time of electron since they are comparable and determine operating frequency of the diode. Calculated values of maximal negative conductance are near 200mS and 30mS for the diodes with operating frequencies 270GHz to 880GHz, respectively.
{"title":"Submillimeter diode on single barrier nanostructure","authors":"N. Goncharuk","doi":"10.1109/IEEE-IWS.2013.6616772","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616772","url":null,"abstract":"Microwave diode on AlGaAs/GaAs single barrier nanostructure with electron tunnel injection through AlGaAs potential barrier and electron drift in GaAs transit layer is investigated in the framework of small-signal theory taking into account diode parasitic resistance. We consider both transit and injection time of electron since they are comparable and determine operating frequency of the diode. Calculated values of maximal negative conductance are near 200mS and 30mS for the diodes with operating frequencies 270GHz to 880GHz, respectively.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133047900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616826
Xingchen Guo, Q. Chu
A wideband dual-polarized antenna for LTE (Long Term Evolution) communication system is presented. The antenna is excited by inverted L-shaped strip feed line. A wide impedance bandwidth operating from the frequency 1.71GHz to 2.69 GHz with Voltage Standing Wave Ratio(VSWR) less than 1.5 is achieved. The isolation of the antenna between the two input ports is over 40dB. Stable radiation patterns with low cross-polarized, low backlobe radiation and gain of 9dBi have been obtained across the entire operating frequency bands.
{"title":"Wideband dual-polarized base station antenna with high isolation and low cross polarization for LTE communication system","authors":"Xingchen Guo, Q. Chu","doi":"10.1109/IEEE-IWS.2013.6616826","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616826","url":null,"abstract":"A wideband dual-polarized antenna for LTE (Long Term Evolution) communication system is presented. The antenna is excited by inverted L-shaped strip feed line. A wide impedance bandwidth operating from the frequency 1.71GHz to 2.69 GHz with Voltage Standing Wave Ratio(VSWR) less than 1.5 is achieved. The isolation of the antenna between the two input ports is over 40dB. Stable radiation patterns with low cross-polarized, low backlobe radiation and gain of 9dBi have been obtained across the entire operating frequency bands.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115221420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper studies the opportunistic spectrum access (OSA) of secondary users in a large-scale overlay cognitive radio (CR) network. Particularly, a threshold-based protocol is investigated, where the secondary transmitter is allowed to access the spectrum only if the maximum signal power of the received pilots sent from the primary transmitters is lower than a certain threshold. To measure the resulting transmission opportunity for the secondary users by the proposed OSA protocol, the concept of spatial opportunity is introduced and evaluated by applying tools from stochastic geometry. Due to the interaction between the primary and secondary users under the proposed OSA protocol, an exact calculation of the coverage probabilities of the primary and secondary networks is infeasible. To tackle this difficulty, approximation is made on the distribution of the active secondary transmitters. Based on this approximation, the coverage performance of the overlay CR network under the proposed OSA protocol is characterized. Simulation results are provided to validate our analysis.
{"title":"Spatial opportunity in cognitive radio networks with primary transmitter assisted opportunistic spectrum access","authors":"Xiaoshi Song, Changchuan Yin, Danpu Liu, Rui Zhang","doi":"10.1109/IEEE-IWS.2013.6616817","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616817","url":null,"abstract":"This paper studies the opportunistic spectrum access (OSA) of secondary users in a large-scale overlay cognitive radio (CR) network. Particularly, a threshold-based protocol is investigated, where the secondary transmitter is allowed to access the spectrum only if the maximum signal power of the received pilots sent from the primary transmitters is lower than a certain threshold. To measure the resulting transmission opportunity for the secondary users by the proposed OSA protocol, the concept of spatial opportunity is introduced and evaluated by applying tools from stochastic geometry. Due to the interaction between the primary and secondary users under the proposed OSA protocol, an exact calculation of the coverage probabilities of the primary and secondary networks is infeasible. To tackle this difficulty, approximation is made on the distribution of the active secondary transmitters. Based on this approximation, the coverage performance of the overlay CR network under the proposed OSA protocol is characterized. Simulation results are provided to validate our analysis.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115612304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616725
Chenxi Zhao, Byungjoon Park, Yunsung Cho, Bumman Kim
A 1.75GHz CMOS Doherty power amplifier (PA) is presented. This Doherty PA uses voltage combining method that is different from the conventional current combining Doherty amplifier based on HBT. The output transformer is employed to combine the output power and realize the load modulation. The proposed CMOS Doherty PA is fabricated in 180nm CMOS process. Simulation results show that the output transformer acts as an impedance inverter and reduces the load impedance of carrier amplifier when the peaking amplifier turns, that meet the load modulation Doherty PA operation. The prototype achieves a maximum output power of +28.6dBm with a peak power-added efficiency (PAE) of 31.6% by using 3.4 V supply voltage. The PAE is kept above 25% over a 6 dB range of output power. It shows clearly the efficiency enhancement at the power back-off point due to the Doherty operation.
{"title":"Analysis and design of CMOS Doherty power amplifier using voltage combining method","authors":"Chenxi Zhao, Byungjoon Park, Yunsung Cho, Bumman Kim","doi":"10.1109/IEEE-IWS.2013.6616725","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616725","url":null,"abstract":"A 1.75GHz CMOS Doherty power amplifier (PA) is presented. This Doherty PA uses voltage combining method that is different from the conventional current combining Doherty amplifier based on HBT. The output transformer is employed to combine the output power and realize the load modulation. The proposed CMOS Doherty PA is fabricated in 180nm CMOS process. Simulation results show that the output transformer acts as an impedance inverter and reduces the load impedance of carrier amplifier when the peaking amplifier turns, that meet the load modulation Doherty PA operation. The prototype achieves a maximum output power of +28.6dBm with a peak power-added efficiency (PAE) of 31.6% by using 3.4 V supply voltage. The PAE is kept above 25% over a 6 dB range of output power. It shows clearly the efficiency enhancement at the power back-off point due to the Doherty operation.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114172349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616747
Jiawen Sun, Qing Hao, Zhenghe Feng, Wanshun Jiang
A novel dielectric resonator antenna oscillator (DRAO), which realizes dielectric resonator antenna (DRA) and dielectric resonator oscillator (DRO) simultaneously, is presented in this paper. The design procedure of the parallel-feedback type DRAO at dedicated short range communications band is discussed. Firstly, the DRA was three-dimensional simulated by HFSS. Then the DRO was designed based on the negative resistance theory, using the ADS software for optimization and nonlinear analysis. Finally, it was integrated in the on-board unit (OBU) of electronic toll collection (ETC) system. The experimental results of the OBU show that the performance of the DROA is well and it can be used in real ETC system.
{"title":"Design and investigation of dielectric resonator antenna oscillator (DRAO) in electronic toll collection (ETC) system","authors":"Jiawen Sun, Qing Hao, Zhenghe Feng, Wanshun Jiang","doi":"10.1109/IEEE-IWS.2013.6616747","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616747","url":null,"abstract":"A novel dielectric resonator antenna oscillator (DRAO), which realizes dielectric resonator antenna (DRA) and dielectric resonator oscillator (DRO) simultaneously, is presented in this paper. The design procedure of the parallel-feedback type DRAO at dedicated short range communications band is discussed. Firstly, the DRA was three-dimensional simulated by HFSS. Then the DRO was designed based on the negative resistance theory, using the ADS software for optimization and nonlinear analysis. Finally, it was integrated in the on-board unit (OBU) of electronic toll collection (ETC) system. The experimental results of the OBU show that the performance of the DROA is well and it can be used in real ETC system.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116747856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/IEEE-IWS.2013.6616764
Yuehang Xu, Oupeng Li, R. Xu
Two kinds of doubly clamped beam graphene resonant channel transistors (RCTs) with local gate configurations, fabricated by direct exfoliation and transfer are presented in this paper. The RCTs are actuated and detected directly by using a vector network analyzer. And the measurement results show that the exfoliation RCT and transfer RCT have resonant frequencies of ~34MHz at 77K and ~88MHz at 300K, respectively. The operation principle of radio frequency (RF) RCT is detailed in this paper. And a compact electrical equivalent circuit model has been given out based on the analysis of electromechanical model of doubly clamped beam and field effect transistor theory. The results show that excellent agreements have been achieved between the experimental results and the simulation results. With the proposed compact model, the RCTs can be useful for developing high sensitivity sensor, or in the perspective of high quality RF filters by using graphene nano-electromechanical systems(NEMS).
{"title":"Graphene resonant channel transistor","authors":"Yuehang Xu, Oupeng Li, R. Xu","doi":"10.1109/IEEE-IWS.2013.6616764","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2013.6616764","url":null,"abstract":"Two kinds of doubly clamped beam graphene resonant channel transistors (RCTs) with local gate configurations, fabricated by direct exfoliation and transfer are presented in this paper. The RCTs are actuated and detected directly by using a vector network analyzer. And the measurement results show that the exfoliation RCT and transfer RCT have resonant frequencies of ~34MHz at 77K and ~88MHz at 300K, respectively. The operation principle of radio frequency (RF) RCT is detailed in this paper. And a compact electrical equivalent circuit model has been given out based on the analysis of electromechanical model of doubly clamped beam and field effect transistor theory. The results show that excellent agreements have been achieved between the experimental results and the simulation results. With the proposed compact model, the RCTs can be useful for developing high sensitivity sensor, or in the perspective of high quality RF filters by using graphene nano-electromechanical systems(NEMS).","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115745606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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