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2011 IEEE 29th International Conference on Computer Design (ICCD)最新文献

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Circumventing a ring oscillator approach to FPGA-based hardware Trojan detection 绕过环形振荡器的fpga硬件木马检测方法
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081411
Justin Rilling, David Graziano, Jamin Hitchcock, Tim Meyer, Xinying Wang, Phillip H. Jones, Joseph Zambreno
Ring oscillators are commonly used as a locking mechanism that binds a hardware design to a specific area of silicon within an integrated circuit (IC). This locking mechanism can be used to detect malicious modifications to the hardware design, also known as a hardware Trojan, in situations where such modifications result in a change to the physical placement of the design on the IC. However, careful consideration is needed when designing ring oscillators for such a scenario to guarantee the integrity of the locking mechanism. This paper presents a case study in which flaws discovered in a ring oscillator-based Trojan detection scheme allowed for the circumvention of the security mechanism and the implementation of a large and diverse set of hardware Trojans, limited only by hardware resources.
环形振荡器通常用作锁定机制,将硬件设计绑定到集成电路(IC)中的特定硅区域。这种锁定机制可用于检测硬件设计的恶意修改,也称为硬件木马,在这种修改导致IC上设计的物理位置发生变化的情况下。然而,在为这种情况设计环形振荡器时,需要仔细考虑以保证锁定机制的完整性。本文提出了一个案例研究,其中在基于环形振荡器的木马检测方案中发现的缺陷允许绕过安全机制,并实现大量不同的硬件木马,仅受硬件资源的限制。
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引用次数: 23
Distributed thermal management for embedded heterogeneous MPSoCs with dedicated hardware accelerators 具有专用硬件加速器的嵌入式异构mpsoc分布式热管理
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081395
Yen-Kuan Wu, Shervin Sharifi, T. Simunic
This paper addresses thermal management in heterogeneous MPSoCs where the power states of the general purpose cores can be controlled by the operating system (OS) while OS is not able to control power states of the dedicated hardware accelerators (DHAs). We propose a scalable and cooperative distributed thermal management technique 1 which works based on the cooperation of local controllers deployed in some of the cores. Through low overhead message passing, these controllers communicate in order to exchange temperature and performance related information which is used to find the best thermally safe set of frequency settings for the cores. Experimental results show that for our technique can successfully reduce the deadline miss rate by 47.16% in average compared to localized thermal management techniques while successfully satisfying temperature constraints.
本文讨论了异构mpsoc中的热管理,其中通用内核的电源状态可以由操作系统(OS)控制,而操作系统无法控制专用硬件加速器(DHAs)的电源状态。我们提出了一种可扩展和协作的分布式热管理技术1,该技术基于部署在一些核心中的本地控制器的合作。通过低开销的消息传递,这些控制器进行通信,以便交换温度和性能相关信息,这些信息用于为核心找到最佳的热安全频率设置。实验结果表明,与局部热管理技术相比,该技术在满足温度约束的情况下,可以成功地将截止日期遗漏率平均降低47.16%。
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引用次数: 7
Low power, high throughput network-on-chip fabric for 3D multicore processors 用于3D多核处理器的低功耗,高吞吐量片上网络结构
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081458
V. Nandakumar, M. Marek-Sadowska
Long wires degrade significantly the performance of network-on-chip (NoC) communication fabric in large multicore processors. 3D network-on-chip architecture alleviates the problem of long wires, but practical limitations of CMOS technology restrict such structures to two active layers only. In this work, we study a heterogeneous 3D chip with processor cores and cache blocks implemented in CMOS and NoC fabric in VeSFET tech-nology. Such a 3D architecture shows significant improvements in all network parameters including latency, power and energy consumption compared to existing 3D NoCs.
在大型多核处理器中,长导线会显著降低片上网络(NoC)通信结构的性能。3D片上网络架构减轻了长导线的问题,但CMOS技术的实际限制将这种结构限制在两个有源层。在这项工作中,我们研究了一种异构3D芯片,该芯片采用VeSFET技术,在CMOS和NoC结构中实现处理器内核和缓存块。与现有的3D noc相比,这种3D架构在所有网络参数(包括延迟、功耗和能耗)方面都有显著改进。
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引用次数: 6
Multi-level wordline driver for low power SRAMs in nano-scale CMOS technology 基于纳米级CMOS技术的低功耗sram多级字行驱动
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081419
F. Moradi, G. Panagopoulos, G. Karakonstantis, D. Wisland, H. Mahmoodi, J. K. Madsen, K. Roy
In this paper, a multi-level wordline driver scheme is presented to improve SRAM read and write stability while lowering power consumption during hold operation. The proposed circuit applies a shaped wordline voltage pulse during read mode and a boosted wordline pulse during write mode. During read, the applied shaped pulse is tuned at nominal voltage for short period of time, whereas for the remaining access time, the wordline voltage is reduced to a lower level. This pulse results in improved read noise margin without any degradation in access time which is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during hold mode, the wordline voltage starts from a negative value and reaches zero voltage, resulting in a lower leakage current compared to conventional SRAM. Our simulations using TSMC 65nm process show that the proposed wordline driver results in 2X improvement in static read noise margin while the write margin is improved by 3X. In addition, the total leakage of the proposed SRAM is reduced by 10% while the total power is improved by 12% in the worst case scenario of a single SRAM cell. The total area penalty is 10% for a 128Kb standard SRAM array.
本文提出了一种多级字行驱动方案,以提高SRAM读写稳定性,同时降低保持时的功耗。所提出的电路在读模式期间施加成形字线电压脉冲,在写模式期间施加升压字线脉冲。在读取期间,施加的形状脉冲在短时间内以标称电压调谐,而在剩余的访问时间内,字线电压降低到较低的水平。该脉冲可以改善读取噪声裕度,而不会降低访问时间,这可以通过检查SRAM单元的动态和非线性行为来解释。此外,在保持模式下,字线电压从负值开始并达到零电压,与传统SRAM相比,泄漏电流更低。我们使用台积电65nm工艺进行的仿真表明,所提出的wordline驱动器使静态读噪声裕度提高了2倍,而写裕度提高了3倍。此外,在单个SRAM单元的最坏情况下,该SRAM的总泄漏降低了10%,总功率提高了12%。对于128Kb标准SRAM阵列,总面积损失为10%。
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引用次数: 20
Comparative analysis of copper and CNT interconnects for H-tree clock distribution 铜和碳纳米管互连用于h树时钟分布的比较分析
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081443
Vish Ganti, H. Mahmoodi
Clock distribution network is an important part of digital integrated circuits. The clock signal carried by the distribution network has to reach every end node at the same time to ensure synchronized switching. Due to mismatches among different nodes of the H-tree, the clock transitions among the final nodes of the distribution tree show some time difference, the maximum of which is called clock skew. In modern CMOS technologies, copper interconnect is popular for high level interconnects such as clock and power routing. Carbon Nanotube (CNT) exhibits less resistivity than copper making it a better material for interconnect. This paper compares the impact on clock skew of H-tree clock distribution network by replacing the traditional copper interconnects with carbon nanotube interconnects. By applying temperature mismatch, threshold voltage mismatch, and process mismatch, our findings show that using carbon nanotube interconnects reduces the clock skew significantly compared to traditional copper interconnects.
时钟分配网络是数字集成电路的重要组成部分。配电网所携带的时钟信号必须同时到达各终端节点,以保证同步切换。由于h树不同节点之间的不匹配,分布树最终节点之间的时钟跃迁存在一定的时间差,其最大值称为时钟偏差。在现代CMOS技术中,铜互连普遍用于时钟和电源路由等高层互连。碳纳米管(CNT)具有比铜更低的电阻率,是一种更好的互连材料。本文比较了用碳纳米管互连取代传统铜互连对h树时钟配电网时钟偏差的影响。通过应用温度失配、阈值电压失配和工艺失配,我们的研究结果表明,与传统的铜互连相比,使用碳纳米管互连可以显著降低时钟偏差。
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引用次数: 3
A GALS Network-on-Chip based on rationally-related frequencies 基于合理相关频率的GALS片上网络
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081369
Jean-Michel Chabloz, A. Hemani
GALS Networks-on-Chip (NoCs) in which the frequency of every switch can be set independently would enable per-node DVFS without requiring asynchronous switch design. However, traditional GALS interfaces introduce high latency penalties and are therefore ill-suited for inter-switch links in a NoC. In this paper we introduce and study a GALS Network-on-Chip based on the Globally-Ratiochronous, Locally-Synchronous (GRLS) paradigm. GRLS constrains all switch frequencies to be rationally-related but enables the use of efficient interfaces which reduce the latency of the network 60% compared to GALS solutions and obtains better throughput-per-power ratios compared to synchronous and mesochronous solutions.
可以独立设置每个开关频率的GALS片上网络(noc)可以实现每个节点的DVFS,而无需异步开关设计。然而,传统的GALS接口引入了高延迟损失,因此不适合NoC中的交换间链路。本文介绍并研究了一种基于全局同步、局部同步(GRLS)模式的GALS片上网络。GRLS将所有开关频率限制为合理相关,但允许使用有效的接口,与GALS解决方案相比,网络延迟减少了60%,并且与同步和中同步解决方案相比,获得了更好的功率吞吐量比。
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引用次数: 2
An energy- and performance-aware DRAM cache architecture for hybrid DRAM/PCM main memory systems 用于混合DRAM/PCM主存储系统的能量和性能敏感的DRAM缓存体系结构
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081427
H. Lee, Seungcheol Baek, C. Nicopoulos, Jongman Kim
The last few years have witnessed the emergence of a promising new memory technology. Phase-Change Memory (PCM) is increasingly viewed as an attractive alternative for the memory sub-system of future microprocessor architectures, mainly because of its inherent ability to scale deeply into the nanoscale regime, and its low power consumption. However, PCM's write performance is its Achilles' heel, especially when compared to the prevalent DRAM technology. This weakness necessitates the deployment of hybridized solutions that fuse DRAM and PCM, in order to attain high overall system performance. In this paper, we set out to explore how various DRAM/PCM hybrid configurations affect system performance and energy consumption, and then proceed with the presentation of a novel architecture that maximizes performance without adversely affecting power efficiency. An energy-delay product improvement of 42.2%, on average, over conventional hybrid structures, is demonstrated.
过去几年见证了一种有前途的新存储技术的出现。相变存储器(PCM)越来越被视为未来微处理器架构中存储子系统的一个有吸引力的替代方案,主要是因为其固有的深度扩展到纳米级的能力,以及它的低功耗。然而,PCM的写入性能是它的致命弱点,特别是与流行的DRAM技术相比。为了获得更高的整体系统性能,需要部署融合DRAM和PCM的混合解决方案。在本文中,我们着手探索各种DRAM/PCM混合配置如何影响系统性能和能耗,然后继续介绍一种新的架构,在不影响功率效率的情况下最大化性能。与传统混合结构相比,该结构的能量延迟积平均提高了42.2%。
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引用次数: 50
Runtime adaptable concurrent error detection for linear digital systems 线性数字系统的运行时自适应并发错误检测
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081406
Yu Liu, Kaijie Wu
In response to the rising fault susceptibility of ICs due to aggressive device scaling, a number of concurrent error detection (CED) techniques have been proposed. The existing circuit- or logic- level CED techniques aim at the worst case of fault susceptibility. Recognizing that the energy consumption of the circuitry with different CED capability varies significantly, these techniques could result in significant overhead for today's deep sub-micron devices that suffer from strong variation of fault susceptibility. In this paper, we propose a novel RT-level CED technique for linear digital systems. The proposed technique offers run-time adaptable CED so that devices will never overpay the energy bills for their CED needs.
为了应对集成电路由于侵略性器件缩放而导致的故障易感性上升,人们提出了许多并发错误检测(CED)技术。现有的电路级或逻辑级CED技术针对的是故障易感性的最坏情况。认识到具有不同CED能力的电路的能量消耗差异很大,这些技术可能会导致当今深亚微米器件的巨大开销,这些器件的故障敏感性变化很大。在本文中,我们提出了一种新的用于线性数字系统的rt级CED技术。所提出的技术提供了运行时可适应的CED,因此设备永远不会为其CED需求支付过多的能源账单。
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引用次数: 1
Energy-efficient multi-level cell phase-change memory system with data encoding 具有数据编码的节能多级单元相变存储系统
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081394
Jue Wang, Xiangyu Dong, Guangyu Sun, Dimin Niu, Yuan Xie
Phase-change memory (PCM) is one of the most promising technologies among emerging non-volatile memories. Recently, the technology of multi-level cell (MLC) for PCM has been developed and a high capacity memory system can be implemented by storing multiple bits in a cell. However, programming MLC PCM involves the program-and-verify scheme. Thus, the energy of programming intermediate states in MLC PCM is considerably larger than that of single-level cell (SLC) PCM. To mitigate the MLC energy overhead, we propose an energy-efficient PCM architecture using data encoding write based on the observation that there are significant value-dependent energy variations in programming MLC PCM. In addition, data comparison write (DCW) is adopted to enhance the effectiveness of the proposed data encoding architecture for MLC PCM. Simulation results show that this encoding architecture achieves 9.6% average energy saving (up to 19.8%) on the plain MLC PCM system, and 12.9% average energy saving (up to 26.7%) on the DCW-adopted MLC PCM system1.
相变存储器(PCM)是新兴的非易失性存储器中最有前途的技术之一。近年来,PCM的多级单元(MLC)技术得到了发展,通过在一个单元中存储多个比特来实现大容量存储系统。然而,MLC PCM的编程涉及到编程和验证方案。因此,MLC PCM中编程中间态的能量明显大于单能级单元(SLC) PCM。为了减少MLC的能量开销,我们提出了一种使用数据编码写入的节能PCM架构,该架构基于MLC PCM编程中存在显着的值依赖的能量变化。此外,采用数据比较写入(DCW)来提高所提出的MLC PCM数据编码体系的有效性。仿真结果表明,该编码结构在普通MLC PCM系统上平均节能9.6%(最高节能19.8%),在采用dcw的MLC PCM系统上平均节能12.9%(最高节能26.7%)1。
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引用次数: 63
SoftBeam: Precise tracking of transient faults and vulnerability analysis at processor design time SoftBeam:在处理器设计时精确跟踪瞬态故障和漏洞分析
Pub Date : 2011-10-09 DOI: 10.1109/ICCD.2011.6081430
M. Gschwind, V. Salapura, Catherine Trammell, S. Mckee
To study system reliability of a next-generation system, we undertake a soft error vulnerability study for a next-generation microprocessor design. Starting from design data for the entire processor, we extend the microprocessor verification methodology to study soft error propagation through microprocessor logic into the architected processor state. We use soft error injection into randomly selected latch bits to (1) identify areas for improvement, (2) derate technology susceptibility by architectural, microarchitectural, and logic masking resulting in increased soft error resilience; and (3) identify areas where microarchitectural data corruption can be tolerated as performance degradation without impact on correctness, yielding even greater soft error resilience. Based on these results, we reduce design vulnerability to soft errors by factors ranging from 2 for an execution unit to more than 32 for a memory management unit.
为了研究下一代系统的系统可靠性,我们对下一代微处理器设计进行了软错误脆弱性研究。从整个处理器的设计数据出发,我们将微处理器验证方法扩展到研究软错误通过微处理器逻辑传播到体系结构处理器状态。我们在随机选择的锁存位中使用软错误注入来(1)确定需要改进的领域,(2)通过架构、微架构和逻辑屏蔽降低技术敏感性,从而增加软错误弹性;(3)确定微架构数据损坏可以容忍为性能下降而不影响正确性的领域,从而产生更大的软错误恢复能力。基于这些结果,我们通过从执行单元的2到内存管理单元的32以上的因素来减少对软错误的设计脆弱性。
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引用次数: 6
期刊
2011 IEEE 29th International Conference on Computer Design (ICCD)
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